This Wednesday, the kick-off meeting for the ENSPECT (Enabling New Space Power Electronics) project took place at the German Space Agency at DLR.
The project is researching the optimization of the radiation resistance of gallium nitride (GaN)-based power transistors for use in satellite applications. Together with our partners, including TESAT-Spacecom, the Fraunhofer Institute for Applied Solid State Physics (IAF) and the Institute for Microelectronics Stuttgart (IMS), we are conducting radiation tests and developing precise models for radiation-induced traps as well as power electronic circuits for DC/DC applications on satellites.
The project results should also help to make GaN components more reliable in harsh environments on earth.
More information on the project website: Link
