Last week in Nuremberg (9–11 June), the ILH at the University of Stuttgart was present across the conference, the stages, and the exhibition floor:
📄 Two papers in the conference:
- Ruben Schnitzler — Gate Switching Instability in SiC MOSFETs at Extended Lifetimes Using a Stress-Frequency of 40 MHz
- Aline Reck — Modeling of Monolithic Bidirectional GaN HEMTs Using the Physics-Based ASM-HEMT Compact Model
🎤 Two talks on the exhibition stages:
- Dominik Koch, Technology Stage: GaN Power Modules - Translating Intrinsic Performance to System Level
- Ingmar Kallfass, AI & Data Center Stage: AI-Driven Digital Twins for Characterization and Reliability of SiC Power Devices and Systems
🔬 And our booth in the Research Zone:
Advanced Wide-Bandgap Semiconductor Reliability Characterization and System Design
Furthermore, more than 20 students and colleagues visited the fair on Wednesday to discover the latest developments and network with our partners!
Thanks to all the colleagues, partners, and visitors who came around! That's what makes the trip worth it. See you next year!
Dominik Koch
M.Sc.Group Leader Power Electronics / Research Assistant