Institute of Robust Power Semiconductor Systems

VALERI

Validation of power electronic circuit carriers with spatial integration

The VALERI project aims to show how three-dimensional circuit carriers can unfold their potential in power electronics and offer comprehensive advantages over state-of-the-art technology. A successful validation of this technology approach can give a significant innovation boost to important key technologies such as electromobility.

Power semiconductor technology has been developing rapidly for quite a while now. Power density in particular has increased significantly in recent years, also due to new semiconductor materials. As a result, new power modules and packages are required. Many new approaches are being pursued at both package and module level. A promising approach is the three-dimensional structure using innovative substrate materials, as this can reduce parasitic elements and increase power density.

The VALERI project aims to show how three-dimensional circuit carriers can unfold their potential in power electronics applications and offer comprehensive advantages over the current state of the art. The combination with a 3D integrated power electronics module will be validated for the power classes relevant in electromobility. Such modules are key components, for example, in the drive train of electric vehicles, in battery chargers, in DC-DC converters, in photovoltaic inverters and in power supply units of various power classes. A successful validation, as it is aimed at in the VIP+ funding programme, can give an important innovation boost to key technologies such as electromobility with this technology approach. The preceding basic research from comprehensive preliminary work by the applicants provides all the building blocks for a successful validation process.

The unique selling point of this project compared to the state of the art lies in the combination of the approaches listed below for three-dimensional heat dissipation and the transfer of MID technologies to power electronics.

Specifically, the innovations consist of:

  • Design with optimized geometry and thus increased surface area for heat dissipation.
  • Technologically, a functional expansion is achieved, e.g. by additional three-dimensional cooling elements.
  • Metal inserts (heat dissipation, lead frame and housing connections)
  • Comparison of substrates (LCP-MID, (PPA or PAA) and ceramic-MID) and evaluation for different performance classes for 3D substrates.
  • Backside contacting of flipped discrete power semiconductors
  • Contacting and fixing of the discrete power modules via " clamps ", which are used simultaneously as connection contacts and heat sinks.
  • "Stacking" of the modules for power adjustment becomes possible.

The project should enable an industrial implementation after the end of the project. By demonstrating the feasibility of the technology, the risks for the industry are to be minimized and incentives for an own commitment are to be created. Therefore, already at an early phase of the project, intensive efforts should be made to utilize the validated technology in the German industrial environment of power electronics. The approach makes it possible to set up a company or spin off. The Technologie-Transfer-Initiative GmbH (TTI GmbH) is the central contact point at the University of Stuttgart. Due to the close cooperation between IFM and Hahn-Schickard, there is already experience with the implementation of spin-offs [Cytena, BioFluidix, SpinDiag, Verapido Medical]. The existing production capacities, space and plant structure are predestined to serve as an incubator and start-up aid for start-up companies.

The two working groups of the University of Stuttgart, led by Dr. Thomas Günther from IFM and Prof. Kallfass from ILH, are involved in the VALERI project planning.

 

Institut für Mikrointegration

This picture showsDominik Koch
M.Sc.

Dominik Koch

Research Assistant

This picture showsJan Hückelheim
M.Sc.

Jan Hückelheim

Research Assistant

This picture showsKevin Muñoz Barón
M.Sc.

Kevin Muñoz Barón

Research Assistant

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