Aim of this project is the development of an intelligent half-brdige, consisting of two parallel dies, for a 48 V, 10 kW "mild-hybrid" inverter or DC/DC application. To achieve this 100 V, 120 A Galliumnitride dies from GaN Systems will be integrated into a prepackage with a resistiv temperature sensor. These prepackages will be soldered on a main board in a parallel half-bridge configuration. The main board consists of necessary system components and the power and signal connections to the bus.
The prepackages enable, similiar to the monolithic integration, the combination of sensors in close proximity to the actual die. In addition the backside of the chip can be contacted quite well to achieve an optimal thermal connection to the heatsink.
For this purpose a prepreg is laminated onto a copper substrate and a thermister trace is structured on it. Afterwars the GaN Die will be sintered on the surface and enclosed by several prepreg layers. By micro vias the contacts to the chip surface will be manufactured and afterwards structured by traces on the top of the prepackage.