M.Sc.

Javier Acuna

Research Assistant
Institute of Robust Power Semiconductor Systems

Contact

+49 711 685 - 68697

Pfaffenwaldring 47
70569 Stuttgart
Germany
Room: 3.277

Subject

Computational modelling of fatigue damage of power modules under realistic load profiles

Short-circuit protection of wide-bandgap devices

Thermo-mechanical modelling

J. Acuna and I. Kallfass, “Substrate Choice and Thermal Optimization of a Half-bridge Power Module based on Chip Scale GaN HEMTs” in Proc. 19 th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), 11-14 Sept. 2017, Warsaw, Poland.

J. Acuna, A. Seidel and I. Kallfass, “Design and Implementation of a Gallium-Nitride based Power Module for Light Electro-Mobility Applications” in Proc. IEEE 2 nd Annual Southern Power Electronics Conference (SPEC), 4-7 Dec. 2017, Puerto Varas, Chile.

Short-circuit protection of wide-bandgap devices

J. Walter, J. Acuna and I. Kallfass, “Design and Implementation of an Integrated Current Sensor for a Gallium Nitride Half-Bridge”, to appear in Proc. International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM),  5-7 June 2018, Nuremberg, Germany

Thermo-Mechanical Reliability of Power Modules (BSc. or Study Thesis)

Short Circuit Protection of Wide-Bandgap Devices (BSc. or Study Thesis)

More details here

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