The goal of the 'solid state match box' project is to design an RF matching network for a frequency of 13.56 MHz and voltages up to 1200 V. For the first time, the matching network is to be based on active components: traditionally, load matching in matching circuits of these power classes is performed on mechanically-variable passive components, which are usually costly and space-intensive. In the novel matching network to be created in the project, wide-bandgap power transistors based on silicon carbide (SiC) will be used to switch passive devices on and off in the load-matching network, matching the impedance of the load to the impedance of the RF power source.
In the project, ILH is developing the power transistor simulation models to accurately describe the network in advance of prototype development. The simulation models of the manufacturers usually do not or only insufficiently cover the working points required in this work or are not even suitable for the simulation of such working points due to convergence problems. Therefore, a transistor model is to be developed on the basis of established and standardized models, which can also be used for the simulation of RF matching networks of this power class.