Institute of Robust Power Semiconductor Systems

Robust Power Semiconductor Systems II

Robust Power Semiconductor Systems 2 (RPSS2) is the follow-up lecture to the lecture RPSS1 running in the winter term. The lecture conveys a solid understanding of the use of modern semiconductor technologies in power electronic applications. Based on the relevant figures of merit of Si, GaN and SiC based power semiconductors, aspects of circuit design, mounting and packaging and reliability will be covered. An additional focus is on the current front of research and development in the area of robust power semiconductor systems.

Lecture: Prof. Dr.-Ing. Ingmar Kallfass
Exercise: M.Sc. Julian Weimer

 

Important Information: Official communication channel is ILIAS. Students please register for this course in ILIAS to get the latest information here

 

Information
Course of studies M.Sc. Electrical Engineering and Information Technology University of Stuttgart
Date of lecture Monday, 2:00pm - 3:30pm
Date of exercise tbd
Starting Date Monday, April 20th
Location of lecture University of Stuttgart, Campus Vaihingen
Pfaffenwaldring 9, Room V 9.32
Location of exercise tbd
Description The lecture conveys a solid understanding of the use of modern semiconductor technologies in power electronic applications. Based on the relevant figures of merit of Si, GaN and SiC based power semiconductors, aspects of circuit design, mounting and packaging and reliability will be covered. An additional focus is on the current front of research and development in the area of robust power semiconductor systems.
Content Part 5: Thermal Analysis
Motivation - Thermal Material Properties - Electro-thermal - Thermo-mechanical entities - Thermal Modeling - Thermal Equivalent Circuits - Thermal FEM Simulation

Part 6: Reliability and Lifetime
Reliability and Lifetime - Reliability Functions - Accelerated Lifetime Tests - Failure Rate Models - Reliability Tests - Failure Mechanisms - Semiconductor Device Level - Package Level

Part 7: GaN-Based Power Transistors
Material Properties - Device Fabrication - Device Performance
SWS 4 in the summer term
Exam written, in English language

note: we reserve the right to switch to an oral exam in case of a low number of candidates.

Part 1: questions on a selected scientific publication. The paper will be distributed about 4 weeks prior to the exam.
Part 2: general course-related question.

allowed tools: all except communication-ready devices.
Further Information and News ILIAS

 

This picture showsJulian Weimer
M.Sc.

Julian Weimer

Research Assistant

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