|Lecture:||Prof. Dr.-Ing. Ingmar Kallfass|
|Exercise:||M.Sc. Ruben Schnitzler|
Important Information: Official communication channel is ILIAS. Students please register for this course in ILIAS to get the latest information here
|Course of studies||M.Sc. Electrical Engineering and Information Technology University of Stuttgart|
|Date of lecture||Tuesday, 2:00pm - 3:30pm|
|Date of exercise||Thursday 9:45am-11:15am|
|Starting Date||April 20th|
|Location of lecture||University of Stuttgart, Campus Vaihingen
Pfaffenwaldring 47, Room V 47.05
|Location of exercise|| University of Stuttgart, Campus Vaihingen
Pfaffenwaldring 47, Room V 47.06
|Description||The lecture conveys a solid understanding of the use of modern semiconductor technologies in power electronic applications. Based on the relevant figures of merit of Si, GaN and SiC based power semiconductors, aspects of circuit design, mounting and packaging and reliability will be covered. An additional focus is on the current front of research and development in the area of robust power semiconductor systems.|
|Content||Part 1: Thermal Analysis
Motivation - Thermal Material Properties - Electro-thermal - Thermo-mechanical entities - Thermal Modeling - Thermal Equivalent Circuits - Thermal FEM Simulation- Calorimetric measurements
Part 2: Reliability and Lifetime
Reliability and Lifetime - Reliability Functions - Accelerated Lifetime Tests - Failure Rate Models - Reliability Tests - Failure Mechanisms - Semiconductor Device Level - Package Level
Part 3: GaN-Based Power Transistors
Material Properties - Device Fabrication - Device Performance
|SWS||4 in the summer term|
|Exam||written, in English language
note: we reserve the right to switch to an oral exam in case of a low number of candidates.
Part 1: questions on a selected scientific publication. The paper will be distributed about 4 weeks prior to the exam.
Part 2: general course-related question.
allowed tools: all except communication-ready devices.
|Further Information and News||ILIAS|