ENSPECT

The project aims to optimise the radiation hardness of gallium nitride (GaN)-based power transistors for use in satellite applications. GaN components enable more compact and efficient voltage converters with higher power density and improved efficiency. These properties are particularly important for space applications as they reduce weight, space requirements and energy losses.

For high-voltage applications (>200 V), GaN devices require special technological adaptations, such as self-locking HEMTs and the use of field plates to increase dielectric strength. However, these measures often lead to charge carrier defects (traps), which have a negative effect on radiation resistance and make it difficult to use them in radiation-intensive environments such as space travel.

Our research project is transferring GaN technology, which has already proven itself in electromobility and energy technology, to space applications. Through targeted experimental investigations, we want to improve the radiation hardness of GaN high-voltage components and ensure their performance in extreme environments. Together with our partners, including TESAT-Spacecom, the Fraunhofer Institute for Applied Solid State Physics (IAF) and the Institute for Microelectronics Stuttgart (IMS), we carry out radiation tests and develop precise models for traps and high-performance power electronic circuits.

The aim of the project is to develop a highly integrated 100-watt power supply module for satellites that significantly outperforms conventional technologies in terms of volume and weight. This module will make a significant contribution to the further development of satellite technology and aims to achieve technology readiness level TRL5.