Open student theses
GaN HEMTs are increasingly being used in satellite power electronics thanks to their high efficiency and power density. However, their robustness against radiation remains a critical issue for space qualification. In particular, single-event effects (SEEs) caused by high-energy particles can lead to permanent shifts in parameters and degradation of device behaviour, such as IV characteristics, leakage currents and threshold voltages.
Accurate, compact modelling of these radiation-induced degradations is essential to enable circuit-level prediction of device performance under radiation stress. While the ASM-HEMT model provides a solid, physics-based description of GaN HEMTs, it does not natively account for radiation effects. The aim of this work is to extend the model with radiation-aware equations and parameters, enabling the simulation of device and circuit behaviour under both nominal and irradiated conditions.
Type of Thesis:
BA ✅ FA ✅ MA ✅
Relevant Experience:
- Basic knowledge of transistor modelling.
- Skills in conducting literature reviews, processing data and analysing IV characteristics to assess degradation propagation.
- Interest in the subject and ability to work independently.
Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) play a key role in modern power electronics, especially in applications such as high-frequency circuits, power converters and renewable energy systems. Precise modeling of these transistors is crucial to maximize their performance and efficiency. An established model for this is the ASM GaN HEMT model, which was developed specifically to describe the complex physical properties of GaN transistors. However, traditional approaches to parameter extraction, such as manual fitting, often reach their limits, especially for nonlinear systems such as HEMTs. Reinforcement learning (RL) offers a promising alternative by enabling adaptive, data-driven optimization strategies that could improve the accuracy and efficiency of parameter extraction for the ASM model.
Type of Thesis:
BA ❌ FA ✅ MA ✅
Relevant Experience:
- Basic knowledge of transistor modeling
- Experience with programming (ideally Python) and Machine Learning
- Interest in the application of modern AI methods in Power Electronics
Contact:
Modern wide bandgap semiconductor based power transistors, such as SiC power MOSFETs and GaN power HEMTs, allow for extremely fast voltage and current switching on the nanosecond scale, resulting in increased power densities in power converters.
The control of the switching waveforms of such fast-switching power electronic sub-systems becomes a major challenge, but is indispensible both for maintaining electro-magnetic compatibility and for the limitation of switching loss energies.
In this research work, several techniques in the design of the gate loop of power commutation cells based on GaN power transistors in view of waveform shaping for an optimum tradeoff between electro-magnetic emission and switching loss energy are investigated in theory, simulation and measurement and compared to the prevailing state of the art. The final work programme is determined in bilateral planification between the tutor and the student and can comprise: Survey of the prevailing state of the art, Theoretical investigation of gate-loop concepts for waveform shaping, including multi-level gate drivers such as Bosch EG120, nonlinear external gate resistance and novel proprietary GaN power transistors with custom gate structure, Circuit-level switching waveform simulations in ADS, On-wafer measurements of novel proprietary GaN power transistors with custom gate structure, Experimental validation of selected gate loop concepts in custom-designed breadboard demonstrators
Type of Thesis:
BA ✅ FA ✅ MA ✅
Relevant Experience:
- Theoretical expertise in power semiconductor devices and power electronics circuits is recommended.
Contact:
Together with the wide-bandgap semicondcutor based power transistors, such as SiC power MOSFETs and GaN power HEMTs, ceramic capacitors form the basic building blocks of fast-switching high current and voltage commutation cells and power modules in high power density switched-mode power converters. The power capacitors must follow suit with the power transistors in high-frequency capabilities, in order not to become the bottleneck for switching loss energy and thermal management, and accurate simulation models of the capacitors‘ high-frequency characteristcs must be developed for the reliable design of fast-switching power modules. Together with the wide-bandgap semicondcutor based power transistors, such as SiC power MOSFETs and GaN power HEMTs, ceramic capacitors form the basic building blocks of fast-switching high current and voltage commutation cells and power modules in high power density switched-mode power converters. The work is carried out in collaboration at University of Stuttgart, Germany, and at ENSI Caen, France. The final work programme is determined in trilateral planification between the tutors and the student and can comprise: Survey of the prevailing state of the art, Microwave characterisation of ceramic capacitors at ILH, including the design of dedicated test breadboards, Model development, implementation in VerilogA and verification at ENSI Caen, Optional: power module breadboard design and experimental validation at ILH.
Type of Thesis:
BA ✅ FA ✅ MA ✅
Relevant Experience:
- Theoretical expertise in power semiconductor devices and power electronics circuits is recommended.
Contact:
More Information:
The work is carried out in collaboration and joint tutorship with ENSI Caen, France. Parts of the work may be carried out at ENSI Caen.
Gallium Nitride (GaN) power semiconductors offer high switching speeds, low losses, and compact designs, making them ideal for next-generation brushless DC (BLDC) motor inverters. However, achieving optimal performance requires targeted filter design to enhance efficiency, improve electromagnetic compatibility (EMC), and enable soft switching.
In this thesis, suitable LC filter concepts will be developed, simulated, and evaluated to optimize the switching behavior and overall system performance of GaN-based BLDC inverters. The goal is to achieve Zero Voltage Switching (ZVS) or Zero Current Switching (ZCS) through appropriately designed resonant or commutation networks.
Type of Thesis:
BA ✅ FA ✅ MA ✅
Relevant Experience:
- Power Electronics 1
- Basic knowledge of circuit simulation and electrical measurement techniques
- Experience with MATLAB/Simulink, LTspice, or PLECS is an advantage
Contact:
Contact
Dominik Koch
M.Sc.Group Leader Power Electronics / Research Assistant
Benjamin Schoch
M.Sc.Group Leader High Frequency Electronics / Research Assistant