ECPE msPEBB Phase 2

As part of the ECPE Project "Packaging Technology of GaN LV msPEBB Phase 2" we, together with the  Electronics Integration Lab /University of Applied Science Kempten, are investigating a high-current (>100 A) low-voltage (<100 V) modular scalable intelligent power module based on PCB-embedding of the latest GaN power transistors. The materials and design choices are oriented towards achieving high power densities, current scalability through device parallelization, and high temperature operation of the intelligent power modules for e.g. automotive drive train applications.

Have a look into several publications from the first phase:

• Thermal Study on Leadframe Dimensioning for High Power Dissipation and Low Inductance Commutation Cells
• Gate Driver Concept for Parallel Operation of Low-Voltage High-Current GaN Power Transistors for Mild-Hybrid Applications (DOI:  10.1109/APEC42165.2021.9487194)
• Asymmetric Packages for Optimal Performance of GaN-HEMT using PCB Fabrication Technology
• A 48 V, 300 kHz, High Current DC/DC-Converter Based on Paralleled, Asymmetrical & Thermally Optimized PCB Embedded GaN Packages with Integrated Temperature Sensor (DOI:  10.23919/ISPSD50666.2021.9452241)