Dieses Bild zeigt Ingmar Kallfass

Herr Prof. Dr.-Ing.

Ingmar Kallfass

Direktor und Institutsleiter
Institut für Robuste Leistungshalbleitersysteme

Kontakt

+49 711 685 - 68747
+49 711 685 - 58747

Visitenkarte (VCF)

Pfaffenwaldring 47
70569 Stuttgart
Deutschland
Raum: 1.173

  1. I. Dan, G. Ducournau, S. Hisatake, P. Szriftgiser, R. Braun, und I. Kallfass, „A Terahertz Wireless Communication Link Using a Superheterodyne Approach“, IEEE Transactions on Terahertz Science and Technology, Bd. 10, Nr. 1, Art. Nr. 1, 2020, doi: 10.1109/TTHZ.2019.2953647.
  2. I. Dan, G. Ducournau, S. Hisatake, P. Szriftgiser, R.-P. Braun, und I. Kallfass, „A superheterodyne 300 GHz wireless link for ultra-fast terahertz communication systems“, International Journal of Microwave and Wireless Technologies, Bd. 12, Nr. 7, Art. Nr. 7, 2020, doi: 10.1017/S1759078720000495.
  3. S. Moench, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, und I. Kallfass, „A 600 V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors“, in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020.
  4. S. Moench u. a., „A 600 V GaN-on-Si Power IC with Integrated Gate Driver, Freewheeling Diode, Temperature and Current Sensors and Auxiliary Devices“, in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, 2020.
  5. L. Manoliu, B. Schoch, und I. Kallfass, „FPGA Based Reconfigurable On-Board Payload Processing for an Exploratory In-Orbit Verification of an E-Band (71-76 GHz) Satellite Link (EIVE)“, in Proc. 5th ESA SpacE FPGA Users Workshop, Noordwijk, 2020.
  6. S. Moench u. a., „PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs with On-Package Gate and DC-Link Capacitors“, IEEE Transactions on Power Electronics Letters, 2020.
  7. M. Basler u. a., „A GaN-based Current Sense Amplifier for GaN HEMTs with Integrated Current Shunts“, in. Proc. 32nd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020.
  8. J. Weimer und I. Kallfass, „Efficiency Requirements for Passively Cooled Converters with Thermal Measurement Based 3D-FEM Simulation“, in Proc. Conference on Power Electronics and Applications EPE, Lyon, 2020.
  9. K. Muñoz Barón, K. Sharma, M. Nietzsche, P. Ziegler, und I. Kallfass, „Threshold voltage instability under application-oriented power cycling conditions for SiC power devices“, in. Proc. PCIM Europe, Nuremberg, Germany, 2020.
  10. B. Schoch, U. Mohr, S. Klinkner, und I. Kallfass, „Towards a Cubesat Mission for a Wideband Data Transmission in E-Band“, in Radio Wireless Week RWW, San Antonio, TX, S. 1--4, 2020.
  11. L. Yan und I. Kallfass, „A General Model Translation Approach for Vertical Power MOSFETs Based on BSIM3 Model“, in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, 2020.
  12. G. Ducournau, P. Szriftgiser, I. Dan, V. Chinni, M. Zaknoune, und I. Kallfass, „100 Gbit/s, 300 GHz Wireless Communication Link Combining Photonic Transmitter and Electronic Receiver“, in Proc. 44rd Int. Conf. on Infrared, Millimeter and Terahertz Waves (IRMMW), Paris, 2019.
  13. C. M. Groetsch, S. Wagner, L. John, und I. Kallfass, „A Dual Gate Downconverter for H-Band Employing An Active Load“, in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, S. 1--4, 2019.
  14. J. Winkler, J. Homoth, H. Bartolf, und I. Kallfass, „Study on transient Light Emission of SiC Power MOSFETs regarding the Sensing of Source-Drain Currents in hard switched Power Electronic Applications“, in. Proc. PCIM Europe, Nuremberg, Germany, 2019.
  15. J. Winkler, J. Homoth, und I. Kallfass, „Novel Approach for Temperature and Current Sensing for Wide Bandgap Materials“, in Proc. Strategic Materials Conference (SMC), Munich, 2019.
  16. S. M. Dilek, B. Schoch, und I. Kallfass, „Performance Analysis of Real-Time Full-Duplex E-band Link“, in Proc. European Microwave Conf. EuMC, Paris, S. 1--4, 2019.
  17. C. M. Groetsch und I. Wagner, S. andKallfass, „An Active Gate Pumped Frequency Upconverter for Terahertz Frequencies“, in Proc. German Microwave Conference (GeMIC), Stuttgart, S. 1--4, 2019.
  18. D. Koch, S. Araujo, und I. Kallfass, „Accuracy Analysis of Calorimetric Loss Measurement for Benchmarking Wide Bandgap Power Transistors under Soft-Switching Operation“, in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia), 2019.
  19. A. Dyskin und I. Kallfass, „Feasibility Study of the Feed-Forward Carrier Recovery Technique for E-band Integrated Receivers“, IET Circuits, Devices and Systems, S. 1--9, 2019.
  20. A. Dyskin, S. Wagner, und I. Kallfass, „A Compact Resistive Quadrature Low Noise Ka-Band VCO SiGe HBT MMIC“, in Proc. 12th German Microwave Conference (GeMIC), Stuttgart, S. 1--4, 2019.
  21. W. Johannes, S. Stanko, M. Caris, und I. Kallfass, „Investigation of a new Bistatic FMCW-Receiver at 94 GHz with Wireless Synchronization“, in Proc. German Microwave Conference (GeMIC), Stuttgart, S. 1--4, 2019.
  22. J. Weimer und I. Kallfass, „Soft-Switching Losses in GaN and SiC Power Transistors Based on New Calorimetric Measurements“, in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, S. 455--458. doi: 10.1109/ISPSD.2019.8757650.
  23. L. Manoliu, C. M. Groetsch, und I. Kallfass, „Design and Optimization of Mixers Using Load-Pull Analysis of Higher Order Intermodulation Products“, in Proc. German Microwave Conference (GeMIC), Stuttgart, S. 1--4, 2019.
  24. I. Dan, S. Hisatake, P. Szriftgiser, R. P. Braun, I. Kallfass, und G. Ducournau, „Towards super-heterodyne THz links pumped by photonic local oscillators“, in Proc. 44rd Int. Conf. on Infrared, Millimeter and Terahertz Waves (IRMMW), Paris, 2019.
  25. I. Kallfass, „300 GHz HEMT Transceivers and Comm/Imaging Applications“, Summer THz Array Radar Topology Workshop (START), Caltech, Pasadena, 2019.
  26. I. Kallfass, „High Capacity Millimeterwave Wireless Data Links“, VDI Fachkonferenz 5G in der Automation, Baden-Baden, 2019.
  27. M. Basler u. a., „A Pseudo-Complementary GaN-Based Gate Driver with Reduced Static Losses“, in Proc. 7th IEEE Workshop on Wide Bandgap Power Devices and Applications, S. 1--6, 2019.
  28. I. Kallfass u. a., „High System Gain E-Band Link in a Wideband Aircraft-to-Ground Data Transmission“, in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, S. 1--4, 2019.
  29. I. Hammoud, N. Bauer, I. Kallfass, und R. Kennel, „Optimized Capacitive Active Ripple Compensation Topology for a 3.7 kW Single Phase High Power Density On-Board Charger of Electric Vehicles“, Electrical Engineering, Springer, Bd. 101, Nr. 3, Art. Nr. 3, 2019, doi: https://rd.springer.com/article/10.1007/s00202-019-00818-5.
  30. B. Schoch, L. Manoliu, J. Keim, S. Chartier, S. Klinkner, und I. Kallfass, „Link budget analysis of E- and W-band satellite services“, in 25th Ka and Broadband Communications Conference, Sorrento, S. 1--8, 2019.
  31. S. Moench, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, und I. Kallfass, „Integrated Current Sensing in GaN Power ICs“, in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019.
  32. I. Kallfass und I. Dan, „Active Electronic Transceivers for THz Communication Systems“, IBM Research, Zuerich, colloquium presentation, 2019.
  33. S. M. Dilek, E. Bammidi, und I. Kallfass, „E-band simplex wireless data transmission and bandwidth-dependent performance analysis based on OFDM signals“, in Proc. German Microwave Conference (GeMIC), Stuttgart, S. 1--4, 2019.
  34. I. Dan, G. Ducournau, S. Hisatake, P. Szriftgiser, R. P. Braun, und I. Kallfass, „A Superheterodyne 300 GHz Wireless Link for Ultra-Fast Terahertz Communication Systems“, in Proc. European Microwave Conf., Paris, 2019.
  35. J. Acuna, T. Rupp, M. Sonner, M. Klingler, B. Metais, und I. Kallfass, „Influence of Power Cycle Turn-On Duration on the Lifetime of Power Module Die-Attach Layers“, in Proc. 25th Int. Workshop on Thermal Investigations of ICs and Systems (Therminic), Lecco, 2019.
  36. J. Winkler, J. Juergen, S. Schoser, J. Homoth, und I. Kallfass, „Utilization of Parasitic Luminescence from Power Semiconductor Devices for Current Sensing“, in. Proc. PCIM Europe, Nuremberg, Germany, 2018.
  37. L. Yan und I. Kallfass, „A General Model Translation Approach for Vertical Structure Power MOSFETs Based on BSIM3 Model“, in Proc. IEEE International Power Electronics and Application Conference and Exposition (PEAC), 2018.
  38. E. R. Bammidi und I. Kallfass, „Design of an Error Detector Circuit for BPSK Costas Loop for Carrier Synchronization in Millimeter-Wave Receivers“, in Proc. German Microwave Conference (GeMIC), Freiburg, S. 1--4, 2018.
  39. J. Walter, J. Acuna, und I. Kallfass, „Design and Implementation of an Integrated Current Sensor for a Gallium Nitride Half-Bridge“, in. Proc. PCIM Europe, Nuremberg, Germany, 2018.
  40. D. Mueller, P. Pahl, A. Tessmann, A. Leuther, T. Zwick, und I. Kallfass, „A WR3-band 2-bit Phase Shifter Based on Active SPDT Switches“, IEEE Microwave and Wireless Component Letters, Bd. 28, Nr. 9, Art. Nr. 9, 2018.
  41. D. Mueller, F. Boes, A. Tessmann, A. Leuther, T. Zwick, und I. Kallfass, „Crosstalk Analysis and Correction in On-Wafer Measurements at WR-3 Band Frequencies“, in Proc. German Microwave Conference (GeMIC), Freiburg, S. 1--4, 2018.
  42. C. Grötsch, S. Wagner, A. Leuther, D. Meier, und I. Kallfass, „Ultra-Broadband Frequency Multiplier MMICs for Communication and Radar Applications“, in Proc. 13th European Microwave Integrated Circuits Conf. EuMIC, Madrid, S. 1--4, 2018.
  43. I. Kallfass, I. Dan, S. Rey, A. Tessmann, A. Leuther, und T. Kuerner, „MMIC Electronic Steerable 4-Channel Phased-Array Transmit-Receive Frontend for 300 GHz Wireless Personal Area Networks“, in Proc. 8th International Workshop on Terahertz Technology and Applications, Kaiserslautern, 2018.
  44. S. M. Dilek, P. Harati, E. R. Bammidi, und I. Kallfass, „E-Band Transceiver System Characterization Based on Bandwidth Dependent Linear Impairments“, in Proc. German Microwave Conference (GeMIC), Freiburg, S. 1--4, 2018.
  45. I. Kallfass u. a., „Wideband Data Transmission in E-Band Between an Aircraft and a Ground Station“, in Proc. 9th Advanced Satellite Multimedia Systems Conference (ASMS) and 15th Signal Processing for Space Communications Workshop (SPSC), Berlin, 2018.
  46. J. Winkler, J. Homoth, und I. Kallfass, „Exploiting Photoluminescence for New Implementations of SiC Power Semiconductor Devices“, in. Proc. 31st International Electric Vehicles Symposium and Exhibition, EVS 31, and International Electric Vehicle Technology Conference 2018, EVTeC, Kobe, 2018.
  47. D. Mueller, J. Schaefer, H. Massler, M. Ohlrogge, T. Zwick, und I. Kallfass, „Impact of Ground Via Placement in On-Wafer Contact Pad Design up to 325 GHz“, IEEE Transactions on Components, Packaging and Manufacturing Technology, Bd. 8, Nr. 8, Art. Nr. 8, 2018, doi: 10.1109/TCPMT.2018.2811482.
  48. E. R. Castillo, P. Harati, S. Shiba, P. Hügler, C. Waldschmidt, und I. Kallfass, „Spatial-Frequency-Scanning Data Transmission for mmW Multi-User Wireless Communication Systems“, in Proc. 47th European Microwave Conf. EuMC, Nuremberg, S. 1--4, 2017.
  49. C. Salcines, I. Kallfass, H. Kakitani, und A. Mikata, „Full Characterization of High Voltage Power Transistor Intrinsic Capacitances based on a Single 2-Port S-Parameters Measurement“, in Proc. 19th Conference on Power Electronics and Applications EPE, Warsaw, 2017.
  50. S. M. Dilek, P. Harati, C. M. Groetsch, und I. Kallfass, „Performance Analysis of E-Band Transceivers based on IQ Up-Converter Impairments using a Circuit- to System-Level Approach“, in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, S. 1--6, 2017.
  51. D. Mueller u. a., „Bandwidth Optimization Method for Reflective-Type Phase Shifters“, IEEE Trans. on Microwave Theory and Techniques, Bd. 66, Nr. 4, Art. Nr. 4, 2017, doi: 10.1109/TMTT.2017.2779156.
  52. P. Harati u. a., „E-Band Downlink Wireless Data Transmission for Future Satellite Communication“, in Proc. IEEE Radio and Wireless Symposium, Phoenix, 2017.
  53. I. Kallfass, „Compound Semiconductor Based Microwave and Power Electronic Circuits“, Kolloquium "Bauelemente & Technologien, Institut für Halbleitertechnologie, Universität Stuttgart, 2017.
  54. P. Harati u. a., „Is E-Band Satellite Communication Viable?“, IEEE Microwave Magazine, Bd. 18, Nr. 7, Art. Nr. 7, 2017, doi: 10.1109/MMM.2017.2738898.
  55. I. Dan, S. Shiba, E. Rosello, P. Harati, S. Dilek, und I. Kallfass, „Measurement of Complex Transfer Function of Analog Transmit-Receive Frontends for Terahertz Wireless Communications“, in Proc. 47th European Microwave Conf. EuMC, Nuremberg, S. 1--4, 2017.
  56. H. Afewerki, C. Lautensack, N. Boettcher, und I. Kallfass, „Design Approach and Analysis of a MOSFET with Monolithic Integrated EMI Snubber for Low Voltage Automotive Applications“, in Proc. Int. Symp. and Exhibition on Electromagnetic Compatibility (EMC Europe), S. 1--6, 2017.
  57. S. Mönch u. a., „Effect of Substrate Termination on Turn-On Switching Time in High-Voltage GaN-on-Si IC with 600 V HEMT and Gate Driver“, in Proc. 5th IEEE Workshop on Wide Bandgap Power Devices and Applications, S. 1--6, 2017.
  58. I. Kallfass, „600V Class GaN HEMT-Based Power Electronics“, Kolloquium am Ferdinand-Braun-Institut für Höchstfrequenztechnik, Berlin, 2017.
  59. S. Moench, C. Salcines, Y. Li, und I. Kallfass, „Sensitivity Analysis of 600 V Lateral GaN-on-Si HEMTs to Substrate Potential by 4-Terminal IV, CV, Qg Characterization for the Improvement of HEMT Models“, in Proc. IEEE 18th Workshop on Control and Modeling for Power Electronics (COMPEL), S. 1--4, 2017.
  60. P. Pahl, S. Wagner, H. Massler, A. Leuther, I. Kallfass, und T. Zwick, „Efficiency Optimized Distributed Transformers for Broadband Monolithic Millimeter-Wave Integrated Power Amplifier Circuits“, IEEE Trans. Microwave Theory and Techniques, Bd. PP, S. 1--13, 2017.
  61. D. Mueller u. a., „Electromagnetic field simulation of MMICs including RF probe tips“, in Proc. 12th European Microwave Integrated Circuits Conf. EuMIC, Nuremberg, S. 1--4, 2017.
  62. I. Kallfass, „300 GHz Wireless Communication Frontend Based on a Highly Integrated GaAs mHEMT Chip Set“, Workshop Integrated Circuits for High Datarate THz-Communication, Eurpean Microwave Integrated Circuits Conf., Nuremberg, 2017.
  63. A. Dyskin, P. Harati, und I. Kallfass, „A Compact, Low Power and High Sensitivity E-Band Frequency Divider SiGe HBT MMIC“, in Proc. Austrochip Workshop on Microelectronics, Linz, S. 1--4, 2017.
  64. J. Weimer und I. Kallfass, „Multi-Domain Analysis of Power Electronic Modules with Rapid Finite Element Method Simulation“, in Proc. 6th Int. Education Forum on Environment and Energy Science, Tenerife, 2017.
  65. I. Kallfass, J. Antes, A. Tessmann, T. Zwick, und R. Henneberger, „Multi-Gigabit High-Range Fixed Wireless Links at High Millimeterwave Carrier Frequencies“, in Proc. IEEE Radio and Wireless Symposium, Phoenix, 2017.
  66. S. Moench u. a., „High Thermal Conductance AlN Power Module with Hybrid Integrated Gate Drivers and SiC Trench MOSFETs for 2 kW Single-Phase PV Inverter“, in Proc. 18th European Conference on Power Electronics and Applications (EPE), Karlsruhe, Germany, 2016.
  67. T. Kuerner, T. Merkle, und I. Kallfass, „Ultrahohe Datenraten bei Terahertz-Frequenzen übertragen“, Presseinformationen Forschung, TU Braunschweig, 2016.
  68. S. Rey, I. Kallfass, T. Merkle, und T. Kürner, „Input from the TERAPAN Project to the TG3d Call for Contributions to the Response on the Liaison Statement from ITU-R WP1A. IEEE 802.15 TG3d“, Available: https://mentor.ieee.org/802.15/dcn/16/15-16-0082-01-003d-input-from-the-terapan-project-to-the-tg3d-call-for-contributions-to-the-response-on-the-liaison-statementfrom-itu-r-wp1a.docx, 2016.
  69. I. Kallfass, „All-Electronic 300 GHz Analog Transmit/Receive Frontends for Multi-Gigabit Indoor Wirleless Communication“, Form Nano to Terahertz Seminar, IEMN, Lille, 2016.
  70. A. Dyskin, P. Harati, D. Müller, T. Messinger, und I. Kallfass, „A Wideband Phase Detector SiGe HBT MMIC for Multi-Gigabit Synchronous Receivers“, in Proc. 10th German Microwave Conference (GeMIC), Bochum, S. 1--4, 2016.
  71. C. Salcines, I. Kallfass, H. Kakitani, und A. Mikata, „Dynamic Characterization of the Input and Reverse Transfer Capacitances in Power MOSFETs under High Current Conduction“, in Proc. Applied Power Electronics Conf. (APEC), Long Beach, 2016.
  72. P. Harati, A. Tessmann, D. Schwantuschke, R. Henneberger, und I. Kallfass, „E-Band Transmitter with 29 dBm RF Power for Satellite Communication“, in Proc. European Microwave Conf., London, 2016.
  73. S. Mönch u. a., „Quasi-normally-off GaN Gate Driver for High Slew-Rate D-Mode GaN-on-Si HEMTs“, in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, S. 1--4, 2015.
  74. I. Kallfass u. a., „MMIC Chipset for 300 GHz Indoor Wireless Communication“, in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, S. 1--4, 2015.
  75. U. J. Lewark u. a., „Ultra-Broadband W-Band Frequency Multiplier-by-Twelve MMIC“, in Proc. IEEE Int. Microwave Symposium, Phoenix, 2015.
  76. J. Antes und I. Kallfass, „Performance Estimation for Broadband Multi-Gigabit Millimeter and Sub-Millimeter Wave Wireless Communication Links“, IEEE Trans. on Microwave Theory and Techniques, Bd. 63, Nr. 10, Art. Nr. 10, 2015, doi: 10.1109/TMTT.2015.2467390.
  77. S. Mönch u. a., „Monolithic Integrated Quasi-Normally-Off Gate Driver and 600 V GaN-on-Si HEMT“, in Proc. 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, S. 1--6, 2015.
  78. I. Kallfass, „240GHz wireless communication system operating at up to 100 Gbps“, in Proc. IEEE MTT-S Int. Microwave Symp., Phoenix, Workshop Terahertz-wave wireless communications, 2015.
  79. I. Kallfass u. a., „64 Gbit/s Transmission over 850 m Fixed Wireless Link at 240 GHz Carrier Frequency“, Journal of Infrared Millimeter and Terahertz Waves, Bd. 36, Nr. 2, Art. Nr. 2, 2015.
  80. P. Harati, F. Boes, J. Antes, A. Tessmann, und I. Kallfass, „LO Spur Suppression Effect on Ultra Wideband Transceiver Performance for QPSK Modulation Format“, in Proc. European Microwave Conference, Paris, S. 250--253, 2015.
  81. I. Kallfass, „How to Design Power Electronics - The HF in Power Semiconductor Modeling and Design“, Innovations in EDA Webcast Series, Keysight Technologies, 2015.
  82. I. Kallfass u. a., „Towards MMIC-Based 300 GHz Indoor Wireless Communication Systems“, Trans. Institute of Electronics, Information and Communication Engineers IEICE, Bd. E98-C, Nr. 12, Art. Nr. 12, 2015.
  83. T. Kuerner, T. Merkle, und I. Kallfass, „Übertragung von ultrahohen Datenraten mit steuerbaren Antennen bei Terahertz-Frequenzen“, Presseinformationen Forschung, TU Braunschweig, 2015.
  84. U. J. Lewark u. a., „Experimental Validation of Heavy Rain Attenuation in E-Band Based on Climate Wind Tunnel Measurements at 77 GHz“, CEAS Space Journal, Bd. 7, Nr. 4, Art. Nr. 4, 2015.
  85. I. Dan u. a., „A 300 GHz Multi-Stage Balanced Variable Gain Amplifier With Tandem-X Couplers“, in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, S. 1--4, 2015.
  86. D. Mueller, J. Laengst, A. Tessmann, A. Leuther, T. Zwick, und I. Kallfass, „A D-Band 180 Phase Shifter with very low Amplitude- and Phase-Error“, in Proc. European Microwave Integrated Circuit Conf., Rome, S. 1--4, 2014.
  87. P. Pahl u. a., „Design and Evaluation of Realizable and Compact Low-Impedance Transmission Lines for Two Top Metal Layer Semiconductor Processes“, in Proc. Asia Pacific Microwave Conf., S. 1--3, 2014.
  88. J. Antes, U. Lewark, A. Tessmann, A. Leuther, S. Wagner, und I. Kallfass, „Ultra-Wideband Single-Balanced Transmitter-MMIC for Future 300 GHz Communication Systems“, in Proc. IEEE Int. Microwave Symposium, Tampa, S. 1--3, 2014.
  89. I. Kallfass u. a., „High Linearity Active GaN-HEMT Down-Converter MMIC for E-Band Radar Applications“, in Proc. European Microwave Integrated Circuit Conf., Rome, S. 1--4, 2014.
  90. S. Diebold, E. Weissbrodt, H. Massler, A. Leuther, A. Tessmann, und Kallfass. I., „A W-Band Monolithic Integrated Active Hot and Cold Noise Source“, Microwave Theory and Techniques, IEEE Transactions on, Bd. 62, Nr. 3, Art. Nr. 3, 2014.
  91. U. J. Lewark, A. Tessmann, S. Wagner, A. Leuther, T. Zwick, und I. Kallfass, „A 220 to 320 GHz Broadband Active Frequency Multiplier-by-Eight MMIC“, in Proc. European Microwave Integrated Circuit Conf., Rome, S. 1--4, 2014.
  92. S. Koenig u. a., „20 Gbit/s Wireless Bridge at 220 GHz Connecting Two Fiber-Optic Links“, Optical Communications and Networking, IEEE/OSA Journal of, Bd. 6, Nr. 1, Art. Nr. 1, 2014.
  93. W. Freude u. a., „Wireless Communications on THz Carriers Takes Shape“, in Proc. 16th Int. Conf. on Transparent Optical Networks, Graz, S. 1--4, 2014.
  94. T. Merkle u. a., „Backside Process Free Broadband Amplifier MMICs at D-Band and H-Band in 20 nm mHEMT Technology“, in Proc. IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), La Jolla, S. 1--3, 2014.
  95. D. Lopez-Diaz u. a., „Multi-Gigabit Data Transmission at 240 GHz with Complex Baseband Power Detection“, in Proc. European Microwave Integrated Circuit Conf., Rome, S. 1--4, 2014.
  96. F. Boes u. a., „Ultra-Broadband MMIC-Based Wireless Link at 240 GHz Enabled by 64 GS/s DAC“, in Proc. 39th Int. Conf. on Infrared, Millimeter, and Terahertz Waves (IRMMW), Tuscon AZ, S. 1--4, 2014.
  97. F. Boes, J. Antes, U. Lewark, und I. Kallfass, „Experimental Validation of Adverse Weather Effects on a 240 GHz Multi-Gigabit Wireless Communication Link“, in Proc. IEEE Int. Microwave Symposium, Tampa, S. 1--3, 2014.
  98. T. Merkle u. a., „ICs and Modules for Millimeter-Wave Multi-Gigabit Data Links Based on Advanced mHEMT Technology“, Int. Wireless Symposium (IWS), Xi’an, Workshop WS6 High-Speed Link Design: From Devices to Systems, 2014.
  99. U. J. Lewark u. a., „MMIC-Based Module-Level Frequency Generation for E-Band Communication Systems“, in Proc. Radio Wireless Week, S. 1--4, 2014.
  100. B. Baldischweiler u. a., „Characterization of a DC to 40 GHz SPDT switch based on GaAs mHEMT technology at cryogenic temperature“, in Proc. European Microwave Week, Nuremberg, S. 1--4, 2013.
  101. U. J. Lewark, J. Antes, J. Walheim, J. Timmermann, T. Zwick, und I. Kallfass, „Link budget analysis for future E-band gigabit satellite communication links (71-76 and 81-84 Ghz)“, CEAS Space Journal, S. 1--6, 2013.
  102. A. Dyskin, S. Wagner, D. Ritter, und I. Kallfass, „Performance Comparison for Millimeter-Wave Single-Pole Double Throw Switches“, in Proc. IEEE Int. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), S. 1--5, 2013.
  103. I. Kallfass, „Prospects and Challenges of Modern Semiconductor Technologies in Power Electronic Applications“, 36. Sitzung des gemeinsamen Leitungsgremiums Rechnergestützter Schaltungs- und Systementwurf (RSS-LG) Fachaussschuß3.5 GI Fachbereich 8 GMM Fachausschuß8.2 ITG, 2013.
  104. E. Weissbrodt, M. Schlechtweg, O. Ambacher, und I. Kallfass, „W-Band Active Loads and Switching Front End MMICs for Radiometer Calibration“, Int. Journal of Microwave and Wireless Technologies, Bd. 5, S. 293--299, 2013.
  105. I. Kallfass, „Active Integrated Circuits in Millimeter-Wave Applications“, in Proc. Microwave Integrated Circuits and Systems, Workshop on RF, analog, millimeterwave integrated circuits and systems, Israel Institute of Technology, Haifa, Israel, 2013.
  106. S. Koenig u. a., „100 Gbit/s Wireless Link with mm-Wave Photonics“, in Proc. OFC, Anaheim, 2013.
  107. S. Diebold u. a., „A Broadband Amplifier MMIC with 105 to 140 GHz bandwidth“, in Proc. Asia Pacific Microwave Conf., Seoul, S. 1--4, 2013.
  108. S. Koenig u. a., „Wireless sub-THz communication system with high data rate“, Nature Photonics, Bd. 7, Nr. 12, Art. Nr. 12, 2013.
  109. I. Kallfass, „Multi-Gigabit Transmission Based on All-active 200-280 GHz MMIC Chip Set“, IEEE Radio Wireless Week Symposium, Austin, TX, 2013.
  110. U. J. Lewark, A. Tessmann, A. Leuther, und I. Kallfass, „Signal generation and amplification up to 600 GHz using metamorphic HEMT technology“, in Proc. European Microwave Week, Nuremberg, S. 1--4, 2013.
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  112. U. J. Lewark, A. Tessmann, H. Massler, A. Leuther, T. Zwick, und I. Kallfass, „An Active 600GHz Frequency Multiplier-by-Six S-MMIC“, in Proc. IEEE Int. Microwave Symp., Seattle, S. 1--4, 2013.
  113. P. Pahl u. a., „An Impedance Transforming Branchline Coupler for a 65-100 GHz AlGaN/GaN Amplifier MMIC“, in Proc. European Microwave Week, Nuremberg, S. 1--4, 2013.
  114. S. Diebold u. a., „AlGaN/GaN-based HEMT Variable Gain Amplifiers for W-Band Operation“, in Proc. IEEE Int. Microwave Symp., Seattle, S. 1--4, 2013.
  115. A. Dyskin, N. Peleg, S. Wagner, D. Ritter, und I. Kallfass, „An Asymmetrical 60-90 GHz Single-Pole Double Throw Switch MMIC“, in Proc. European Microwave Week, Nuremberg, S. 1--4, 2013.
  116. J. Antes u. a., „Data transmission of an 8-PSK modulated 30 Gbit/s signal using an MMIC-based 240 GHz wireless link“, in Proc. IEEE Int. Microwave Symp., Seattle, S. 1--4, 2013.
  117. D. Schwantuschke, P. Brückner, R. Quay, M. Mikulla, O. Ambacher, und I. Kallfass, „A 40 to 60 GHz Broadband High-power Amplifier MMIC in 100 nm AlGaN/GaN HEMT Technology“, in Proc. European Microwave Conf., Amsterdam, S. 1--4, 2012.
  118. J. Laengst u. a., „A Balanced 175-240 GHz Amplifier MMIC using Airbridge Transmission Lines“, in Proc. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Dublin, S. 1--4, 2012.
  119. U. J. Lewark, A. Tessmann, S. Wagner, A. Leuther, T. Zwick, und I. Kallfass, „255 to 330 GHz Active Frequency-Tripler MMIC“, in Proc. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Dublin, S. 1--4, 2012.
  120. S. Diebold u. a., „W-Band MMIC Radar Modules for Remote Detection of Vital Signs“, in Proc. European Microwave Conf., Amsterdam, 2012.
  121. R. Weber u. a., „An H-Band Low-Noise Amplifier MMIC in 35 nm Metamorphic HEMT Technology“, in Proc. European Microwave Conf. (EuMC), Amsterdam, S. 1--4, 2012.
  122. E. Weissbrodt, A. Leuther, M. Schlechtweg, I. Kallfass, und O. Ambacher, „Highly Integrated Switching Calibration Front-End MMIC with Active Loads for W-Band Radiometers“, in Proc. European Microwave Conf., Amsterdam, S. 1--4, 2012.
  123. I. Kallfass, „Active Integrated Circuits for Terahertz Communication“, CLASTECH Symposium and Exhibition, El Segundo, CA, 2012.
  124. A. Dyskin, D. Ritter, und I. Kallfass, „Ultra Wideband Cascaded Low Noise Amplifier Implemented in 100-nm GaAs Metamorphic-HEMT Technology“, in Proc. International Symposium on Signals, Systems and Electronics, Potsdam, S. 1--4, 2012.
  125. U. J. Lewark und I. Kallfass, „Miniaturized Broadband G-Band Frequency-Doubler MMIC“, in Proc. European Microwave Integrated Circuits Conf., Amsterdam, S. 1--4, 2012.
  126. J. Antes u. a., „A high linearity I/Q Mixer for High Data Rate E-Band Wireless Communication Links“, in Proc. European Microwave Conf., Amsterdam, S. 1--4, 2012.
  127. I. Kallfass, S. Diebold, und E. Weissbrodt, „Radiometrische Kalibrierungseinrichtung mit monolithisch integriertem Mehrfachschalter“, 102011016732, 2012
  128. U. Lewark, J. Antes, H. Massler, A. Leuther, und I. Kallfass, „E-Band Active Frequency-Multiplier-By-8 MMIC with \textgreater20 dB Conversion Gain and Excellent Spurious Suppression“, in Proc. IEEE MTT-S Int. Microwave Symposium, Montreal, S. 1--4, 2012.
  129. S. Koenig u. a., „High-Speed Wireless Bridge at 220 GHz Connecting Two Fiber-Optic Links Each Spanning up to 20 km“, in Proc. Optical Fiber Communication Conference (OFC), 2012.
  130. J. Antes u. a., „220 GHz wireless data transmission experiments up to 30 Gbit/s“, in Proc. IEEE MTT-S Int. Microwave Symposium, Montreal, 2012.
  131. F. Thome, S. Diebold, M. Schlechtweg, A. Leuther, O. Ambacher, und I. Kallfass, „A Tunable 140GHz Analog Phase Shifter With High Linearity Performance“, in Proc. 7th German Microwave Conference, Ilmenau, S. 1--4, 2012.
  132. D. Bruch, M. Seelmann-Eggebert, I. Kallfass, A. Leuther, M. Schlechtweg, und O. Ambacher, „Broadband MMIC Tuners Dedicated to Noise Parameter Measurements at Cryogenic Temperatures“, in Proc. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Dublin, S. 1--3, 2012.
  133. D. Schwantuschke u. a., „A High-gain High-power Amplifier MMIC for V-band Applications using 100 nm AlGaN/GaN Dual-gate HEMTs“, Int. Journal of Microwave and Wireless Technologies, Bd. 4, S. 267--274, 2012.
  134. I. Kallfass, U. Lewark, J. Antes, D. Lopez-Diaz, A. Tessmann, und A. Leuther, „MMIC Chip Sets for Wireless Communication up to 480 GHz“, IEEE802 Pleanry Session, San Diego, 2012.
  135. C. Zech u. a., „An Ultra-Broadband Low-Noise Traveling-Wave Amplifier Based on 50nm InGaAs mHEMT Technology“, in Proc. 7th German Microwave Conference, Ilmenau, S. 1--4, 2012.
  136. J. Antes, U. J. Lewark, A. Tessmann, S. Wagner, T. Zwick, und I. Kallfass, „MMIC-based chipset for multi-Gigabit Satellite Links in E-Band“, in Proc. IEEE Int. Conf. on Wireless Information Technology and Systems, Hawaii, S. 1--4, 2012.
  137. S. Diebold u. a., „A 130 to 160 GHz Broadband Power Amplifier with Binary Power Splitting Structure“, in Proc. Asia Pacific Microwave Conference, Kaohsiung, Taiwan, S. 1--4, 2012.
  138. J. Antes u. a., „Wireless multi-Gigabit data transmission using active MMIC components at 220 GHz“, Int. Journal of Microwave and Wireless Technologies, Bd. 4, S. 291--298, 2012, doi: 10.1017/S1759078712000190.
  139. I. Kallfass, „Berührungslose Bestimmung von Lebenszeichen mit Hilfe von Millimeterwellen-Radar“, VDE-ITG-Fachausschuss 7.2: Funksysteme Funk und Leben: Medizintechnik, Ambient Assisted Living, Karlsruhe, 2011.
  140. R. Weber, U. Lewark, A. Leuther, und I. Kallfass, „A W-Band x12 Multiplier MMIC With Excellent Spurious Suppression“, Microwave and Wireless Components Letters, IEEE, Bd. 21, Nr. 4, Art. Nr. 4, 2011, doi: 10.1109/LMWC.2011.2106486.
  141. S. Kraus, I. Kallfass, R. E. Makon, R. Driad, M. Moyal, und D. Ritter, „A 20-GHz Bipolar Latched Comparator with Improved Sensitivity Implemented in InP HBT Technology“, IEEE Trans. on Microwave Theory and Techniques, Bd. 59, Nr. 3, Art. Nr. 3, 2011.
  142. J. Antes u. a., „MMIC based wireless data transmission of a 12.5 Gbit/s signal using a 220 GHz carrier“, in Proc. European Micrwoave Integrated Circuit Conf., Manchester, S. 238--241, 2011.
  143. S. Diebold, H. Massler, S. Wagner, A. Tessmann, A. Leuther, und I. Kallfass, „140 GHz solid-state amplifier with on-chip tunable output matching“, in Proc. Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), S. 1--4, 2011.
  144. I. Kallfass, „Submillimetre MMIC design in state of the art MHEMT technology“, in workhop Proc. Advanced III-V MMIC Design Techniques, European Microwave Conf., Manchester, 2011.
  145. B. Aja u. a., „Cryogenic Low-Noise mHEMT-Based MMIC Amplifiers for 4 - 12 GHz Band“, Microwave and Wireless Components Letters, IEEE, Bd. 21, Nr. 11, Art. Nr. 11, 2011, doi: 10.1109/LMWC.2011.2167502.
  146. J. Antes u. a., „Systemkonzept und Realisierung einer Millimeterwellen-Richtfunkstrecke mit Datenraten über 12,5 Gbit/s“, VDE-ITG-Fachtagung Mobilkommunikation 16, Bd. Mobilkommunikation. Technologien und Anwendungen : Vorträge der 16. ITG-Fachtagung, Nr. ITG-Fachbericht 230, ISBN: 978-3-8007-3352-1, Art. Nr. ITG-Fachbericht 230, ISBN: 978-3-8007-3352-1, 2011.
  147. U. J. Lewark, A. Tessmann, H. Massler, A. Leuther, und I. Kallfass, „Active single ended frequency multiplier-by-nine \MMIC\ for millimeter-wave imaging applications“, in Proc. Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), S. 1--4, 2011, doi: 10.1109/INMMIC.2011.5773324.
  148. U. Lewark, J. Antes, H. Massler, A. Leuther, und I. Kallfass, „Active Frequency Multiplier MMICs for W-Band Signal Sources in Millimeter-Wave Communication Systems“, in Proc. 12. GMM / ITG-Fachtagung ANALOG, Erlangen, 2011.
  149. D. Schwantusche, C. Haupt, R. Kiefer, M. Mikulla, I. Kallfass, und R. Quay, „A 56-65 GHz High-power Amplifier MMIC using 100 nm AlGaN/GaN Dual-gate HEMTs“, in Proc. European Micrwoave Integrated Circuit Conf., Manchester, S. 1217--1220, 2011.
  150. R. Weber und I. Kallfass, „Oszillator mit Ohmsch einstellbarer Schwingfrequenz“, PCT-EP2010-051269, 2011
  151. U. J. Lewark, A. Tessmann, H. Massler, A. Leuther, und I. Kallfass, „A 300 GHz Active Frequency-Tripler MMIC“, in Proc. 6th European Microwave Integrated Circuit Conference, Manchester, S. 236--239, 2011.
  152. I. Kallfass u. a., „Balanced Active Frequency Multipliers for W-Band Signal Sources“, in Proc. 6th European Microwave Integrated Circuit Conference, Manchester, S. 101--104, 2011.
  153. S. Diebold u. a., „A Fully-Scalable Coplanar Waveguide Passive Library for Millimeter-Wave Monolithic Integrated Circuit Design“, in Proc. European Microwave Integrated Circuit Conf., Manchester, S. 293--296, 2011.
  154. M. Abbasi u. a., „Single-Chip 220 GHz Active Heterodyne Receiver and Transmitter MMICs with On-Chip Integrated Antenna“, IEEE Trans. Microwave Theory and Techniques, Bd. 59, Nr. 2, Art. Nr. 2, 2011.
  155. U. Lewark, A. Tessmann, H. Massler, A. Leuther, und I. Kallfass, „Active frequency multiplier-by-nine \MMIC\ for millimeter-wave signal generation“, in Proc. German Microwave Conference (GeMIC), Darmstadt, S. 1--4, 2011.
  156. D. Lopez-Diaz u. a., „High-performance 60 GHz MMICs for wireless digital communication in 100 nm mHEMT technology“, International Journal of Microwave and Wireless Technologies, Bd. FirstView, S. 1--7, 2011, doi: 10.1017/S1759078711000109.
  157. I. Kallfass u. a., „Wireless DVB-C Transmission at 220 GHz Using Active Single-Chip Receive and Transmit MMICs“, in Proc. IEEE Int. Microwave Symposium, Baltimore, 2011.
  158. Y. Yan u. a., „Monolithically Integrated 200-GHz Double-Slot-Antenna and Resistive-Mixers in a GaAs-mHEMT MMIC Process“, IEEE Trans. on Microwave Theory and Techniques, Bd. 59, Nr. 10, Art. Nr. 10, 2011.
  159. J. Antes u. a., „System concept and implementation of a mmW wireless link providing data rates up to 25 Gbit/s“, in Proc. 3rd Int. IEEE Conf. on Microwaves, Communications, Antennas and Electronic Systems, COMCAS, Tel Aviv, 2011.
  160. M. Schlechtweg u. a., „Millimeter-Wave Circuits and Modules up to 500 GHz Based on Metamorphic HEMT Technology for Remote Sensing and Wireless Communication Applications“, in Proc. 9th IEEE International NEWCAS Conference, Bordeaux, 2011.
  161. S. Diebold u. a., „Design and model studies for solid-state power amplification at 210 GHz“, Int. Journal of Microwave and Wireless Technologies, Bd. 3, Nr. Special Issue 03, Art. Nr. Special Issue 03, 2011, doi: 10.1017/S1759078711000432.
  162. D. Lopez-Diaz u. a., „Subharmonically Pumped 210 GHz I/Q Mixers“, in Proc. IEEE Compound Semiconductor IC Symposium, Monterey, 2010.
  163. A. Leuther u. a., „Metamorphic HEMT Technology for Submillimter-Wave MMIC Applications“, in Proc. 22nd International Conference on Indium Phosphide and Related Materials, Piscataway, NJ, S. 425--429, 2010.
  164. I. Kallfass, A. Tessmann, H. Massler, P. Pahl, und A. Leuther, „An All-Active MMIC-Based Chip Set for a Wideband 260 - 304 GHz Receiver“, in Proc. 5th European Microwave Integrated Circuit Conf., Paris, 2010.
  165. S. Koch, M. Guthoerl, I. Kallfass, A. Leuther, und S. Saito, „A 120-145 GHz Heterodyne Receiver Chipset Utilizing the 140 GHz Atmospheric Window for Passive Millimeter-Wave Imaging Applications“, Solid-State Circuits, IEEE Journal of, Bd. 45, Nr. 10, Art. Nr. 10, 2010, doi: 10.1109/JSSC.2010.2057830.
  166. V. Vassilev u. a., „MMIC-based Receiver Components for MM-wave Radiometry“, in Proc. 35th International Conference on Infrared, Millimeter and THz Waves, Rome, Italy, 2010.
  167. A. Huelsmann u. a., „Integrated Circuits beyond 100 GHz for Stand-Off Detection of Concealed Weapons“, in Proc. 5th Security Research Conference, Berlin, S. 74--77, 2010.
  168. S. Diebold u. a., „Determination of Suitable mHEMT Transistor Dimensioning for Power Amplification at 210 GHz by Comprehensive Measurements“, in Proc. 5th European Microwave Integrated Circuit Conf., Paris, S. 78--81, 2010.
  169. S. Wuensch, D. Bruch, E. Crocoll, I. Kallfass, und M. Siegel, „Development of Monolithic Microwave Integrated Amplifiers as Readout for Detectors at 4.2 K“, in Proc. Applied Superconductivity Conference, Washington D.C., 2010.
  170. D. Lopez-Diaz u. a., „A Balanced Resistive 210 GHz Mixer with 50 GHz IF Bandwidth“, in Proc. 5th European Microwave Integrated Circuit Conf., Paris, S. 190--193, 2010.
  171. I. Kallfass u. a., „A W-Band Four-to-One Switch MMIC with Integrated Reference Channel in Waveguide Package“, rejected, IEEE Microwave and Guided Wave Letters, 2010.
  172. S. Kraus u. a., „High Linearity 2-Bit Current Steering InP/GaInAs DHBT Digital-to-Analog Converter“, in Proc. 22nd International Conf. on Indium Phosphide and Related Materials, 2010.
  173. D. Bruch u. a., „Broadband MMIC Amplifier for Superconducting Single Photon Detector Readout in a Cryogenic Environment“, in Proc. 9th International Workshop on Low Temperature Electronics (WOLTE), 2010.
  174. M. A. Qureshi, T. Purtova, I. Kallfass, A. Leuther, T. Feger, und H. Schumacher, „G and V band RF MEMS Switches and SPDT monolithically integrated in a m-HEMT Technology“, in Proc. IEEE Germany Student Conference, Hamburg, Germany, 2010.
  175. A. Tessmann, I. Kallfass, und A. Leuther, „Fraunhofer IAF targets terahertz circuits“, Compound Semiconductor, Bd. 16, Nr. 7, Art. Nr. 7, 2010.
  176. M. Abbasi u. a., „A Broadband 60-to-120 GHz Single-Chip MMIC Multiplier Chain“, in Proc. IEEE MTT-S International Microwave Symposium, Boston, S. 441--444, 2009.
  177. I. Kallfass u. a., „The Metamorphic HEMT and Its Applications in Remote Sensing“, in Proc. 5th ESA Workshop on Millimetre Wave Technology and Applications & 31st ESA Antenna Workshop, ESTEC, Noordwijk, 2009.
  178. S. Chartier u. a., „Advanced mHEMT MMICs for 220 GHz High-Resolution Imaging Systems“, physica status solidi C6, Nr. 6, Art. Nr. 6, 2009.
  179. I. Kallfass u. a., „A 144 GHz Power Amplifier MMIC With 11 dBm Output Power, 10 dB Associated Gain and 10 \% Power-Added Efficiency“, in Proc. IEEE MTT-S International Microwave Symposium, Boston, S. 429--432, 2009.
  180. H. Zirath u. a., „Integrated receivers up to 220 GHz utilizing GaAsmHEMT technology“, in Proc. IEEE International Symposium on Radio-Frequency Integration Technology, Singapore, 2009.
  181. A. Huelsmann u. a., „Advanced mHEMT technologies for space applications“, in Proc. 20th International Symposium on Space Terahertz Technology, Charlottesville, 2009.
  182. S. Koch und I. Kallfass, „Transceiver Structure“, 20090215406, 2009
  183. A. Leuther u. a., „Metamorphic HEMT Technology for Low-noise Applications“, in Proc. 20th Int. Conf. on Indium Phosphide and Related Materials, 2009.
  184. I. Kallfass, A. Tessmann, H. Massler, A. Leuther, M. Schlechtweg, und O. Ambacher, „A 200 GHz Active Heterodyne Receiver MMIC With Low Sub-Harmonic LO Power Requirements for Imaging Frontends“, in Proc. 4th European Microwave Integrated Circuit Conference, Rome, S. 45--48, 2009.
  185. M. Abbasi u. a., „Single-Chip Frequency Multiplier Chains for Millimeter-Wave Signal Generation“, IEEE Trans. Microwave Theory and Techniques, Bd. 57, Nr. 12, Art. Nr. 12, 2009.
  186. I. Kallfass, H. Tessmann, A. Leuther, A. Massler, M. Schlechtweg, und O. Ambacher, „Millimeter-Wave Monolithic Integrated Circuits for Imaging and Remote Sensing at 140, 200 and 300 GHz“, SPIE Symposium on Optics/Photonics in Security and Defence, Millimetre Wave and Terahertz Sensors and Technology, Berlin ,Germany, 2009.
  187. A. Tessmann u. a., „Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar“, IEEE J. Solid-State Circuits, Bd. 43, Nr. 10, Art. Nr. 10, 2008.
  188. B. M. Motlagh, S. E. Gunnarsson, S. Cherednichenko, H. Zirath, I. Kallfass, und A. Leuther, „Integration of 210-GHz Resistive MMIC Mixers with On-Chip Double-Slot Antenna“, submitted for publication, IEEE Trans. on Microwave Theory and Techniques, 2008.
  189. S. Koch, I. Kallfass, A. Leuther, M. Schlechtweg, S. Saito, und M. Uno, „A Four-Antenna Transceiver MIMIC for 60 GHz Wireless Multimedia Applications“, in Proc. 38th European Microwave Conference, Amsterdam, S. 1529--1532, 2008.
  190. S. E. Gunnarsson u. a., „A 220 GHz Single-Chip Receiver MMIC with Integrated Antenna“, IEEE Microwave and Wireless Component Letters, Bd. 18, Nr. 4, Art. Nr. 4, 2008.
  191. I. Kallfass, H. Massler, A. Tessmann, A. Leuther, M. Schlechtweg, und G. Weimann, „A Broadband Frequency Sixtupler MIMIC for the W-Band with \textgreater7 dBm Output Power and \textgreater6 dB Conversion Gain“, in Proc. IEEE MTT-S Int. Microwave Symp., Honolulu, Hawai, S. 2169--2172, 2007.
  192. I. Kallfass, H. Massler, und A. Leuther, „A 210 GHz, Subharmonically-Pumped Active FET Mixer MMIC for Radar Imaging Applications“, in Proc. IEEE Compound Semiconductor Integrated Circuit Symposium CSICS, Portland, S. 71--74, 2007.
  193. S. Koch, I. Kallfass, R. Weber, A. Leuther, M. Schlechtweg, und M. Uno, „An Analogue, 4:2 MUX/DEMUX Front-End MIMIC for Wireless 60 GHz Multiple Antenna Transceivers“, in Proc. IEEE MTT-S Int. Microwave Symp., Honolulu, Hawai, S. 1121--1124, 2007.
  194. I. Kallfass, C. Schick, H. Schumacher, und T. J. Brazil, „A Universal Large-Signal Model for Hetero Field-Effect Transistors“, in Proc. 12th GaAs Symposium, European Microwave Week, Amsterdam, S. 55--58, 2004.
  195. M. Kasu u. a., „Microwave performance of diamond MESFET“, Japan Society of Applied Physics, Bd. 73, Nr. 3, Art. Nr. 3, 2004.
  196. A. Kubovic, A. Denisenko, W. Ebert, M. Kasu, I. Kallfass, und E. Kohn, „Electronic surface barrier characteristics of H-terminated and surface conductive diamond“, Diamond and Related Materials, Bd. 13, Nr. 4, Art. Nr. 4, 2004.
  197. M. Kubovic u. a., „Microwave performance evaluation of diamond surface channel FETs“, Diamond and Related Materials, Bd. 13, Nr. 4, Art. Nr. 4, 2004.
  198. I. Kallfass u. a., „A SiGe HEMT Mixer IC with Low Conversion Loss“, in Proc. 11th GaAs Symposium, European Microwave Week, Munich, Germany, S. 513--516, 2003.
  199. P. Abele u. a., „32$\backslash$,GHz and 40$\backslash$,GHz bandwidth distributed amplifier MMICs based on N-channel SiGe MODFETs“, in Proc. International Semiconductor Device Research Symposium, Washington D.C., S. 55--56, 2003.
  200. I. Kallfass, M. Zeuner, U. König, H. Schumacher, und T. J. Brazil, „A Model for SiGe MODFETs with Improved Large-Signal Quality and Frequency Range“, in Proc. 10th GaAs Symposium, European Microwave Week, Milano, Italy, 2002.
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