Ingmar Kallfass

D. Koch and I. Kallfass, “A High Power Density Intelligent GaN DC/DC Power Module with Integrated Sensors for 48/24 V to 12 V, 100 A Applications,” in Proc. Applied Power Electronics Conference (APEC), Orlando, 2023.

B. Schoch, D. Wrana, L. Manoliu, M. Kuri, A. Tessmann, and I. Kallfass, “E-Band Active Upconverter Module with Tunable LO Feedthrough,” in Proc. IEEE Radio and Wireless Symposium, 2023.

J. Weimer, D. Koch, R. Schnitzler, and I. Kallfass, “Thermal Impedance Calibration for Rapid and Non-Invasiv Calorimetric Soft-Switching Loss Characterization,” IEEE Trans. on Power Electronics, 2023.

K. Munoz-Baron and I. Kallfass, “Comprehensive Analysis of a Transistor-Based On-State Voltage Measurement Circuit for Online Condition Monitoring of Power Modules,” in Proc. Applied Power Electronics Conferrence (APEC), Orlando, 2023.

D. Wrana, S. Haussmann, B. Schoch, L. John, A. Tessmann, and I. Kallfass, “Effects of Spurious Tones from Frequency-Multiplicative Carrier Generation in a Superheterodyne 300 GHz Transmit Frontend,” in Proc. IEEE Radio and Wireless Symposium, 2023.

T. Ufschlag, B. Schoch, and I. Kallfass, “Inherent Gain Interference of a Two-Tone-Test,” in Proc. IEEE Radio and Wireless Symposium, 2023.

M. Weiser and I. Kallfass, “A Fast On-State Drain-to-Source Voltage Amplifier for the Dynamic Characterization of Fast-Switching Power Transistors,” in Proc. Applied Power Electronics Conference (APEC), Orlando, 2023.

J. Weimer, N. Weimer, J. Nuzzo, and I. Kallfass, “Latent Heat Storage for Fast-Charging, High Power Density Battery Chargers,” IEEE Trans. on Emerging and Selected Topics in Power Electronics, 2023.

D. Wrana, Y. Leiba, L. John, B. Schoch, A. Tessmann, and I. Kallfass, “Short-Range Full-Duplex Real-Time Wireless Link for IEEE802.15.3d Applications,” in Proc. IEEE Radio and Wireless Symposium, San Diego, CA, 2022, doi: 10.1109/SHaRC51853.2021.9375827.

W. Johannes, S. Stanko, and I. Kallfass, “Investigation of a RF Frontend at 35 GHz for Joint Broadband-Radar and Communication Applications,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1--4, 2022.

A. Garcia-Luque et al., “Frequency-Characterization and Modeling of AlGaN/GaN HEMTs for High-Power Applications,” in Proc. Int. Workshop on Integrated Nonlinear Microwave and Millimetrewave Circuits (INMMIC), 2022.

M. Moser et al., “Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates,” in Proc. 17th European Microwave Integrated Circuits Conference (EuMIC), Milano, 2022.

M. Pradhan, M. Moser, M. Alomari, J. N. Burghartz, and I. Kallfass, “Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure,” in Proc. 52nd European Solid-State Device Research Conference (ESSDERC), Milano, 2022.

J. Weimer, D. Koch, and I. Kallfass, “Compact Half-Bridge Module for a Charger Application Utilizing GaN Power Devices with Integrated Driver,” in. Proc. PCIM Europe, Nuremberg, Germany, 2022.

D. Wrana, B. Schoch, A. Tessmann, and I. Kallfass, “Investigation of the Influence of LO Leakage in a Double-Balanced Homodyne E-Band Quadrature Transmitter,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1--4, 2022.

I. Kallfass et al., “RF-Characterisation of AlGaN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates,” GaN Marathon, Venice, 2022.

M. Riefer, J. Winkler, S. Strache, and I. Kallfass, “Substrate Integrated Temperature Sensing for Bondless Power Modules,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Berlin, 2022.

B. Schoch, F. Wiewel, D. Wrana, L. Manoliu, S. Haussmann, and I. Kallfass, “Performance Optimization of an E-Band Communication Link using Open-Loop Predistortion,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1--4, 2022.

H. Gibson, R. Henneberger, A. Tessmann, I. Kallfass, L. Manoliu, and B. Schoch, “A satellite tracking system at 78GHz using the over-moded TE21 ground-station antenna pattern,” in Proc. 32nd International Symposium on Space Terahertz Technology (ISSTT), 2022.

H. Amrouch et al., “Intelligent Methods for Test and Reliability,” in Proc. Design, Automation and Test in Europe Conference (DATE), 2022.

L. Manoliu et al., “Atmospheric Effects on Wideband-Modulated E-band Long-Range Communication Links,” in Proc. Kleinheubacher Tagung, pp. 1--4, 2022.

L. Manoliu et al., “Ultra-High Throughput E/W-Band Downlink CubeSat Mission,” in Proc. 73rd International Astronautical Congress, Paris, France, pp. 1--14, 2022.

S. Haussmann, D. Wrana, B. Schoch, A. Tessmann, R. Henneberger, and I. Kallfass, “Polarisation Multiplex in 300 GHz WirelessCommunication Link using Orthomode Transducer,” in Proc. 52nd European Microwave Conference (EuMC), Milano, 2022.

J. Woermann, S. Ebeling, B. Schoch, A. Tessmann, and I. Kallfass, “Demonstration of a Novel, Incoherent, Self-mixing Radar Principle Applied to a Wideband E-band Frontend,” in Proc. IEEE Int. Microwave Symposium, 2022.

G. Ducournau et al., “300 GHz links testing enabled by Photonics-based THz generation techniques,” French-German Terahertz Conference, La Grande Motte, 2022.

K. Sharma, J. Hueckelheim, K. Munoz-Baron, and I. Kallfass, “Comparison of Different Methods for the Characterization of Online Junction Temperature of a Gallium-Nitride Power Transistor,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Berlin, 2022.

A. Gatzastras, C. Volmer, and I. Kallfass, “A Differential Travelling-Wave Amplifier in a 22nm FD-SOI CMOS Technology,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1--4, 2022.

L. Manoliu et al., “Measurements of Atmospheric Attenuation in an Outdoor Wireless E/W-Band Communication Link,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1--4, 2022.

L. Manoliu, R. Henneberger, A. Tessmann, J. Seidel, M. Eppard, and I. Kallfass, “Impairments of Atmospheric Attenuation on a Wideband E-Band Outdoor Communication Link,” in Proc. European Microwave Conf. EuMIC, London, pp. 1--4, 2021.

K. Munoz-Baron and I. Kallfass, “Online Health Monitoring in Power Modules for Inverter Topologies using Isolated Parameter Acquisition,” in Proc. IEEE Design Methodologies Conference (DMC), Bath, UK, 2021.

I. Kallfass et al., “Towards the Exploratory In-Orbit Verification of an E/W-Band Satellite,” Int. Wireless Symposium (IWS), Nanjing, 2021.

J. Weimer, D. Koch, and I. Kallfass, “Determination of Hard- and Soft-Switching Losses for Wide Bandgap Power Transistors with Noninvasive and Fast Calorimetric Measurements,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.

D. Koch, S. Araujo, J. Weimer, and I. Kallfass, “Automated Calorimetric Measurement with a Peltier Element for Switching Loss Characterization,” in Proc. PCIM Europe Conference, 2021.

M. Basler et al., “GaN Active Diode for Low-Loss Rectification,” in. Proc. 33nd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.

A. Gatzastras, H. Massler, A. Leuther, S. Chartier, and I. Kallfass, “Implementation of Slow-Wave Thin-Film Microstrip Transmission Lines in a 35nm InGaAs Technology,” in Proc. European Microwave Int. Circuits Conf. EuMIC, London, pp. 1--4, 2021.

K. Munoz-Baron, K. Sharma, M. Nietzsche, and I. Kallfass, “Characterization of Electrical Parameters for Health Monitoring in SiC MOSFETs during AC Power Cycling,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021.

I. Kallfass, “A Cubesat Payload for the In-Orbit Verification of an E/W-Band Satellite Communication Link,” 14th UK, Europe, China Millimeter Waves and Terahertz Technology Workshop (UCMMT), Lancaster, UK, 2021.

L. Yan and I. Kallfass, “A Compact Model Adopting the EKV Model for a Silicon Vertical Power MOSFET,” in Proc. Applied Power Electronics Conferrence (APEC), Phoenix, 2021.

M. Jandt, M. Eberspaecher, and I. Kallfass, “Radar imaging based on multiple incoherent antennas,” SPIE Symposium on Optics/Photonics in Security and Defence, Millimetre Wave and Terahertz Sensors and Technology, 2021.

B. Schoch, A. Tessmann, A. Leuther, P. Szriftgiser, G. Ducournau, and I. Kallfass, “Two-Tone Intermodulation Performance of a 300 GHz Power Amplifier MMIC,” in Proc. IEEE Radio and Wireless Symposium, 2021.

S. Moench et al., “PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors,” IEEE Transactions on Power Electronics, vol. 36, no. 1, Art. no. 1, 2021.

R. Loeffler, J. Hueckelheim, D. Koch, and I. Kallfass, “Development of a powerful gate-driver-circuit for high-frequency control of a DC/DC-converter based on gallium nitride transistors,” in Proc. PCIM Europe Conference, 2021.

C. M. Groetsch, I. Dan, L. John, S. Wagner, and I. Kallfass, “Comparison of active dual-gate and passive mixers for terahertz applications,” IET Circuits, Devices and Systems, vol. 15, no. 4, Art. no. 4, 2021, doi: https://doi.org/10.1049/cds2.12032.

L. Manoliu, B. Schoch, M. Koller, J. Wieczorek, S. Klinkner, and I. Kallfass, “High-speed FPGA-Based Payload Computer for an In-Orbit Verification of a 71--76 GHz Satellite Downlink,” 2021 IEEE Space Hardware and Radio Conference (SHaRC), pp. 21–24, 2021, doi: 10.1109/SHaRC51853.2021.9375827.

I. Kallfass, “300 GHz Fixed Wireless Links,” Terahertz Technologies and Applications Summer School, TU Eindhoven, 2021.

J. Woermann, A. Dyskin, S. Chartier, and I. Kallfass, “A Passively-Coupled 39 GHz Colpitts Quadrature VCO in SiGe HBT Technology,” in Proc. European Microwave Int. Circuits Conf. EuMIC, London, pp. 1--4, 2021.

M. C. J. Weiser, J. Hückelheim, and I. Kallfass, “A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTs,” IEEE Transactions on Electron Devices, vol. 68, no. 9, Art. no. 9, 2021, doi: 10.1109/TED.2021.3098498.

D. Koch and I. Kallfass, “Gate Driver Concept for Parallel Operation of Low-Voltage High-Current GaN Power Transistors for Mild-Hybrid Applications,” in Proc. Applied Power Electronics Conference (APEC), Phoenix, 2021.

D. Dell, J. Weimer, and I. Kallfass, “Additive Manufacturing of 10 W Power Converter with High Power Density,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.

M. T. Koller, L. M. Loidold, L. Manoliu, J. Meier, I. Kallfass, and S. Klinkner, “The EIVE CubeSat - Developing a Satellite Bus for a 71-76 GHz E-Band Transmitter Payload,” 35th Annual Small Satellite Conference, Logan, Utah, 2021.

D. Wrana, L. John, S. Wagner, and I. Kallfass, “Short Range Wireless Transmisson Using a 295-315-GHz Superheterodyne THz Link Targeting IEEE802.15.3d Applications,” in Proc. European Microwave Conf. EuMIC, London, pp. 1--4, 2021.

M. Basler et al., “High Power Density DC-DC Converters Using Highly Integrated Monolithic Half-Bridge GaN ICs,” in Proc. PCIM Europe Conference, 2021.

B. Schoch et al., “E-Band Transmitter with 3W Complex Modulated Signal Output Power Performance,” in Proc. European Microwave Conf. EuMIC, London, pp. 1--4, 2021.

M. Riefer, J. Winkler, S. Strache, and I. Kallfass, “Implementation of current-source Gate Driver with open-loop slope shaping for SiC-MOSFETs,” in Proc. PCIM Europe Conference, 2021.

J. Weimer and I. Kallfass, “Thermal Topology Optimization for High Power Density Power Electronic Systems in Passively Cooled Housings,” in Proc. IEEE Design Methodologies Conference (DMC), Bath, UK, 2021.

S. Moench, R. Reiner, P. Waltereit, O. Ambacher, and I. Kallfass, “Capacitive Characteristics of GaN Half-Bridges for Various Si and SOI Substrate Terminations,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.

T. Huesgen, A. Sharma, J. Weimer, D. Koch, and I. Kallfass, “Thermisch und elektrisch optimiertes Leiterplatten-Prepackage für 100V 100A GaN Leistungshalbleiter,” in Proc. MikroSystemTechnik Kongress, Ludwigsburg, 2021.

K. Munoz-Baron and I. Kallfass, “Online Monitoring of Degradation Sensitive Electrical Parameters in Inverter Operation,” in Proc. Applied Power Electronics Conferrence (APEC), Phoenix, 2021.

C. Groetsch, I. Dan, L. John, S. Wagner, and I. Kallfass, “A Compact 281-319 GHz Low-Power Downconverter MMIC for Superheterodyne Communication Receivers,” IEEE Trans. Terahertz Science and Technology, vol. 11, no. 2, Art. no. 2, 2021, doi: 10.1109/TTHZ.2020.3038043.

I. Dan et al., “A Superheterodyne Transmit Receive Chipset for Beyond 5G Network Integration,” in Proc. European Microwave Int. Circuits Conf. EuMIC, London, 2021.

K. Munoz-Baron, J. Hueckelheim, and I. Kallfass, “Accurate online junction temperature estimation using acquisition circuit temperature for on-state voltage measurement,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.

L. Manoliu, S. Kumari, and I. Kallfass, “Variable-Coded Modulation and Error-Free Transmission Algorithms for an Exploratory In-Orbit Verification of an E-Band (71-76 GHz) Satellite Link,” in 27th Ka and Broadband Communications Conference, Sorrento, 2021.

D. Koch, S. Araujo, J. Weimer, and I. Kallfass, “Design Methodology for Ultra-Compact Rogowski-Coils for Current Sensing in Low-Voltage High-Current GaN Based DC/DC-Converters,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.

J. Weimer, D. Koch, M. Nietzsche, J. Haarer, J. Roth-Stielow, and I. Kallfass, “Miniaturization and Thermal Design of a 170 W AC/DC Battery Charger Utilizing GaN Power Devices,” IEEE Open Journal of Power Electronics, vol. 3, pp. 13–25, 2021, doi: 10.1109/OJPEL.2021.3137093.

K. Sharma, S. Kamm, K. Muñoz Barón, and I. Kallfass, “Non-Destructive Failure Analysis of Power Devices via Time-Domain Reflectometry,” in. Proc. CASE, Lille, France, 2021.

K. Sharma, K. Munoz-Baron, J. Ruthardt, and I. Kallfass, “Online Junction Temperature Monitoring of Wide Bandgap Power Transistors using Quasi Turn-on Delay as TSEP,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021.

M. Weiser and I. Kallfass, “Extension on ASM HEMT Model with Trapping Effects in GaN Power Devices,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.

G. Ducournau et al., “300 GHz transmission of E/V bands data-flows in the ThoR project,” Workshop European Conference on Antennas and Propagation (EuCAP), 2021.

D. Koch, M. Ruess, D. Maier, and I. Kallfass, “Optimization of Self-Oscillating Power Converter Based on GaN-HEMTs for Contactless Energy Transfer,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021.

J. Weimer, D. Koch, and I. Kallfass, “Accuracy Study of Calorimetric Switching Loss Energy Measurements for Wide Bandgap Power Transistors,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.

D. Koch, A. Sharma, J. Weimer, M. Weiser, T. Huesgen, and I. Kallfass, “A 48 V, 300 kHz, High Current DC/DC-Converter Based on Paralleled, Asymmetrical and Thermally Optimized PCB Embedded GaN Packages with Integrated Temperature Sensor,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.

A. Sharma, J. Weimer, D. Koch, I. Kallfass, and T. Huesgen, “Asymmetric Packages for Optimal Performance of GaN-HEMT using PCB Fabrication Technology,” in Proc. PCIM Europe Conference, 2021.

I. Dan et al., “A 300 GHz Wireless Link Employing a Photonic Transmitter and Active Electronic Receiver with a Transmission Bandwidth of 54 GHz,” IEEE Transactions on Terahertz Science and Technology, vol. 10, no. 3, Art. no. 3, 2020, doi: 10.1109/TTHZ.2020.2977331.

K. Sharma et al., “Robust Approach for Characterization of Junction Temperature of SiC power devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter,” in Proc. Applied Power Electronics Conf. (APEC), New Orleans, pp. 1532–1536, 2020.

L. Yan and I. Kallfass, “Adopting the BSIM3 Model with Thermal Extension for a Si Vertical Power MOSFET,” in Proc. 19th IEEE International Power Electronics and Motion Control Conference (PEMC), Gliwice, Poland, 2020.

I. Kallfass, “Active Electronic Transceivers for THz Communication Systems,” ACRC Semiconductor Webinars, Israel Institute of Technology, 2020.

I. Kallfass, “Future of high-frequency electronics for wireless communications,” 1st BEST-NEST International Workshop, Center for Broad Explorations on Spectrum Technologies for Navigation, Environment, Surveillance, and Transportation (BEST NEST), Worcester Polytechnic Institute, MA, 2020.

I. Kallfass, “THz Interconnect,” Photonic Wireless Communication Workshop Gothenborg Research Center, Huawei, 2020.

P. Harati and I. Kallfass, “Analogue feed-forward carrier recovery for millimetre-wave broadband wireless links,” IET Microwaves, Antennas and Propagation, vol. 14, no. 5, Art. no. 5, 2020.

S. Moench et al., “Monolithic Integrated AlGaN/GaN Power Converter Topologies on High-Voltage AlN/GaN Superlattice Buffer,” Physica Status Solidi A: Applications and Materials Science, pp. 1–13, 2020, doi: 10.1002/pssa.202000404.

K. Muñoz Barón, K. Sharma, M. Nietzsche, P. Ziegler, D. Koch, and I. Kallfass, “Characterization of Threshold Voltage for Application-Oriented Power Cycling Conditions for Wide-Bandgap Power Devices,” in. Proc. PCIM Europe digital days, Nuremberg, Germany, pp. 1–7, 2020.

M. T. Koller et al., “The exploratory in-orbit verification of an E-band link (EIVE) cubesat project,” 10th Nano Satellite Symposium, Istanbul, 2020.

J. Weimer, D. Koch, M. Nietzsche, M. Zehelein, and I. Kallfass, “Efficiency Requirements for Passively Cooled Converters with Thermal Measurement Based 3D-FEM Simulation,” 22nd European Conference on Power Electronics and Applications (EPE’20 ECCE Europe), pp. 1–8, 2020, doi: 10.23919/EPE20ECCEEurope43536.2020.9215643.

D. Koch et al., “Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power IC,” in. Proc. PCIM Europe, Nuremberg, Germany, 2020.

I. Dan, G. Ducournau, S. Hisatake, P. Szriftgiser, R. Braun, and I. Kallfass, “A Terahertz Wireless Communication Link Using a Superheterodyne Approach,” IEEE Transactions on Terahertz Science and Technology, vol. 10, no. 1, Art. no. 1, 2020, doi: 10.1109/TTHZ.2019.2953647.

I. Dan, G. Ducournau, S. Hisatake, P. Szriftgiser, R.-P. Braun, and I. Kallfass, “A superheterodyne 300 GHz wireless link for ultra-fast terahertz communication systems,” International Journal of Microwave and Wireless Technologies, vol. 12, no. 7, Art. no. 7, 2020, doi: 10.1017/S1759078720000495.

S. Moench, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass, “A 600 V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020.

S. Moench et al., “A 600 V GaN-on-Si Power IC with Integrated Gate Driver, Freewheeling Diode, Temperature and Current Sensors and Auxiliary Devices,” in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, 2020.

L. Manoliu, B. Schoch, and I. Kallfass, “FPGA Based Reconfigurable On-Board Payload Processing for an Exploratory In-Orbit Verification of an E-Band (71-76 GHz) Satellite Link (EIVE),” in Proc. 5th ESA SpacE FPGA Users Workshop, Noordwijk, 2020.

M. Basler et al., “A GaN-based Current Sense Amplifier for GaN HEMTs with Integrated Current Shunts,” in. Proc. 32nd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020.

B. Schoch, A. Tessmann, A. Leuther, S. Wagner, I. Kallfass, “300 GHz broadband power amplifier with 508 GHz gain-bandwidth product and 8 dBm output power,” in Proc. IEEE Int. Microwave Symposium, Boston, 2019.

S. Mönch, R. Reiner, P. Waltereit, D. Meder, M. Masler, R. Quay, O. Ambacher, I. Kallfass, “Asymmetrical Substrate-Biasing Effects and 350 V Operation of Symmetrical Monolithic Normally-Off GaN-on-Si Half-Bridges,” in Proc. 7th IEEE Workshop on Wide Bandgap Power Devices and Applications, pp. 1--6, 2019.

C. M. Groetsch, S. Wagner, and I. Kallfass, “An Active Gate Pumped Frequency Upconverter for Terahertz Frequencies,” in Proc. German Microwave Conference (GeMIC), Stuttgart, pp. 1--4, 2019.

L. Yan, T. Li, and I. Kallfass, “Characterization and modeling of the reverse behavior of a vertical power MOSFET,” Microwave and Optical Technology Letters, vol. 63, no. 8, Art. no. 8, 2019, doi: 10.1002/mop.32119.

I. Dan et al., “A 300GHz Quadrature Down-Converter S-MMIC for Future Terahertz Communication,” in 2019 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 2019, pp. 1–6. doi: 10.1109/COMCAS44984.2019.8958300.

G. Ducournau, P. Szriftgiser, I. Dan, V. Chinni, M. Zaknoune, and I. Kallfass, “100 Gbit/s, 300 GHz Wireless Communication Link Combining Photonic Transmitter and Electronic Receiver,” in Proc. 44rd Int. Conf. on Infrared, Millimeter and Terahertz Waves (IRMMW), Paris, 2019.

C. M. Groetsch, S. Wagner, L. John, and I. Kallfass, “A Dual Gate Downconverter for H-Band Employing An Active Load,” in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, pp. 1--4, 2019.

J. Winkler, J. Homoth, H. Bartolf, and I. Kallfass, “Study on transient Light Emission of SiC Power MOSFETs regarding the Sensing of Source-Drain Currents in hard switched Power Electronic Applications,” in. Proc. PCIM Europe, Nuremberg, Germany, 2019.

J. Winkler, J. Homoth, and I. Kallfass, “Novel Approach for Temperature and Current Sensing for Wide Bandgap Materials,” in Proc. Strategic Materials Conference (SMC), Munich, 2019.

S. M. Dilek, B. Schoch, and I. Kallfass, “Performance Analysis of Real-Time Full-Duplex E-band Link,” in Proc. European Microwave Conf. EuMC, Paris, pp. 1--4, 2019.

D. Koch, S. Araujo, and I. Kallfass, “Accuracy Analysis of Calorimetric Loss Measurement for Benchmarking Wide Bandgap Power Transistors under Soft-Switching Operation,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia), 2019.

A. Dyskin and I. Kallfass, “Feasibility Study of the Feed-Forward Carrier Recovery Technique for E-band Integrated Receivers,” IET Circuits, Devices and Systems, pp. 1--9, 2019.

A. Dyskin, S. Wagner, and I. Kallfass, “A Compact Resistive Quadrature Low Noise Ka-Band VCO SiGe HBT MMIC,” in Proc. 12th German Microwave Conference (GeMIC), Stuttgart, pp. 1--4, 2019.

W. Johannes, S. Stanko, M. Caris, and I. Kallfass, “Investigation of a new Bistatic FMCW-Receiver at 94 GHz with Wireless Synchronization,” in Proc. German Microwave Conference (GeMIC), Stuttgart, pp. 1--4, 2019.

J. Weimer and I. Kallfass, “Soft-Switching Losses in GaN and SiC Power Transistors Based on New Calorimetric Measurements,” in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, pp. 455--458. doi: 10.1109/ISPSD.2019.8757650.

L. Manoliu, C. M. Groetsch, and I. Kallfass, “Design and Optimization of Mixers Using Load-Pull Analysis of Higher Order Intermodulation Products,” in Proc. German Microwave Conference (GeMIC), Stuttgart, pp. 1--4, 2019.

I. Dan, S. Hisatake, P. Szriftgiser, R. P. Braun, I. Kallfass, and G. Ducournau, “Towards super-heterodyne THz links pumped by photonic local oscillators,” in Proc. 44rd Int. Conf. on Infrared, Millimeter and Terahertz Waves (IRMMW), Paris, 2019.

J. Winkler, J. Juergen, S. Schoser, J. Homoth, and I. Kallfass, “Utilization of Parasitic Luminescence from Power Semiconductor Devices for Current Sensing,” in. Proc. PCIM Europe, Nuremberg, Germany, 2018.

L. Yan and I. Kallfass, “A General Model Translation Approach for Vertical Structure Power MOSFETs Based on BSIM3 Model,” in Proc. IEEE International Power Electronics and Application Conference and Exposition (PEAC), 2018.

I. Dan, C.M. Groetsch, S. Shiba, I. Kallfass, “Investigation of Local Oscillator Isolation in a 300 GHz Wireless Link,” in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, pp. 1--6, 2017.

T. Merkle et al., “Testbed for phased array communications from 275 to 325 GHz,” in 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2017, pp. 1–4. doi: 10.1109/CSICS.2017.8240474.

S. Moench, “Measurement and Switching in Sub-Nanoseconds with 600 V GaN HEMTs,” Tektronix Seminar, 2017.

I. Dan, E. Rosello, P. Harati, S. Dilek, I. Kallfass, and S. Shiba, “Measurement of complex transfer function of analog transmit-receive frontends for terahertz wireless communications,” in 2017 47th European Microwave Conference (EuMC), 2017, pp. 1009–1012. doi: 10.23919/EuMC.2017.8231017.

E. R. Castillo, P. Harati, S. Shiba, P. Hügler, C. Waldschmidt, and I. Kallfass, “Spatial-Frequency-Scanning Data Transmission for mmW Multi-User Wireless Communication Systems,” in Proc. 47th European Microwave Conf. EuMC, Nuremberg, pp. 1--4, 2017.

C. Salcines, I. Kallfass, H. Kakitani, and A. Mikata, “Full Characterization of High Voltage Power Transistor Intrinsic Capacitances based on a Single 2-Port S-Parameters Measurement,” in Proc. 19th Conference on Power Electronics and Applications EPE, Warsaw, 2017.

S. M. Dilek, P. Harati, C. M. Groetsch, and I. Kallfass, “Performance Analysis of E-Band Transceivers based on IQ Up-Converter Impairments using a Circuit- to System-Level Approach,” in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, pp. 1--6, 2017.

D. Mueller et al., “Bandwidth Optimization Method for Reflective-Type Phase Shifters,” IEEE Trans. on Microwave Theory and Techniques, vol. 66, no. 4, Art. no. 4, 2017, doi: 10.1109/TMTT.2017.2779156.

P. Harati et al., “E-Band Downlink Wireless Data Transmission for Future Satellite Communication,” in Proc. IEEE Radio and Wireless Symposium, Phoenix, 2017.

I. Kallfass, “Compound Semiconductor Based Microwave and Power Electronic Circuits,” Kolloquium "Bauelemente & Technologien, Institut für Halbleitertechnologie, Universität Stuttgart, 2017.

P. Harati et al., “Is E-Band Satellite Communication Viable?,” IEEE Microwave Magazine, vol. 18, no. 7, Art. no. 7, 2017, doi: 10.1109/MMM.2017.2738898.

H. Afewerki, C. Lautensack, N. Boettcher, and I. Kallfass, “Design Approach and Analysis of a MOSFET with Monolithic Integrated EMI Snubber for Low Voltage Automotive Applications,” in Proc. Int. Symp. and Exhibition on Electromagnetic Compatibility (EMC Europe), pp. 1--6, 2017.

J. Weimer and I. Kallfass, “Multi Domain Optimization of Power Electronic Devices,” Seminar Electro thermal analysis for power electronics, Keysight Technologies, 2016.

S. Moench et al., “High Thermal Conductance AlN Power Module with Hybrid Integrated Gate Drivers and SiC Trench MOSFETs for 2 kW Single-Phase PV Inverter,” in Proc. 18th European Conference on Power Electronics and Applications (EPE), Karlsruhe, Germany, 2016.

T. Kuerner, T. Merkle, and I. Kallfass, “Ultrahohe Datenraten bei Terahertz-Frequenzen übertragen,” Presseinformationen Forschung, TU Braunschweig, 2016.

S. Rey, I. Kallfass, T. Merkle, and T. Kürner, “Input from the TERAPAN Project to the TG3d Call for Contributions to the Response on the Liaison Statement from ITU-R WP1A. IEEE 802.15 TG3d,” Available: https://mentor.ieee.org/802.15/dcn/16/15-16-0082-01-003d-input-from-the-terapan-project-to-the-tg3d-call-for-contributions-to-the-response-on-the-liaison-statementfrom-itu-r-wp1a.docx, 2016.

I. Kallfass, “All-Electronic 300 GHz Analog Transmit/Receive Frontends for Multi-Gigabit Indoor Wirleless Communication,” Form Nano to Terahertz Seminar, IEMN, Lille, 2016.

A. Dyskin, P. Harati, D. Müller, T. Messinger, and I. Kallfass, “A Wideband Phase Detector SiGe HBT MMIC for Multi-Gigabit Synchronous Receivers,” in Proc. 10th German Microwave Conference (GeMIC), Bochum, pp. 1--4, 2016.

C. Salcines, I. Kallfass, H. Kakitani, and A. Mikata, “Dynamic Characterization of the Input and Reverse Transfer Capacitances in Power MOSFETs under High Current Conduction,” in Proc. Applied Power Electronics Conf. (APEC), Long Beach, 2016.

P. Harati, A. Tessmann, D. Schwantuschke, R. Henneberger, and I. Kallfass, “E-Band Transmitter with 29 dBm RF Power for Satellite Communication,” in Proc. European Microwave Conf., London, 2016.

T. Messinger, J. Antes, S. Wagner, A. Leuther, I. Kallfass, “Wideband 200 GHz Injection-Locked Frequency Divide-by-Two MMIC in GaAs mHEMT Technology,” in Proc. IEEE Mediterranean Microwave Symposium, Lecce, pp. 1--4, 2015.

S. Mönch et al., “Quasi-normally-off GaN Gate Driver for High Slew-Rate D-Mode GaN-on-Si HEMTs,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, pp. 1--4, 2015.

I. Kallfass et al., “MMIC Chipset for 300 GHz Indoor Wireless Communication,” in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, pp. 1--4, 2015.

U. J. Lewark et al., “Ultra-Broadband W-Band Frequency Multiplier-by-Twelve MMIC,” in Proc. IEEE Int. Microwave Symposium, Phoenix, 2015.

J. Antes and I. Kallfass, “Performance Estimation for Broadband Multi-Gigabit Millimeter and Sub-Millimeter Wave Wireless Communication Links,” IEEE Trans. on Microwave Theory and Techniques, vol. 63, no. 10, Art. no. 10, 2015, doi: 10.1109/TMTT.2015.2467390.

S. Mönch et al., “Monolithic Integrated Quasi-Normally-Off Gate Driver and 600 V GaN-on-Si HEMT,” in Proc. 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, pp. 1--6, 2015.

D. Mueller, J. Laengst, A. Tessmann, A. Leuther, T. Zwick, and I. Kallfass, “A D-Band 180 Phase Shifter with very low Amplitude- and Phase-Error,” in Proc. European Microwave Integrated Circuit Conf., Rome, pp. 1--4, 2014.

P. Pahl et al., “Design and Evaluation of Realizable and Compact Low-Impedance Transmission Lines for Two Top Metal Layer Semiconductor Processes,” in Proc. Asia Pacific Microwave Conf., pp. 1--3, 2014.

J. Antes, U. Lewark, A. Tessmann, A. Leuther, S. Wagner, and I. Kallfass, “Ultra-Wideband Single-Balanced Transmitter-MMIC for Future 300 GHz Communication Systems,” in Proc. IEEE Int. Microwave Symposium, Tampa, pp. 1--3, 2014.

I. Kallfass et al., “High Linearity Active GaN-HEMT Down-Converter MMIC for E-Band Radar Applications,” in Proc. European Microwave Integrated Circuit Conf., Rome, pp. 1--4, 2014.

S. Diebold, E. Weissbrodt, H. Massler, A. Leuther, A. Tessmann, and Kallfass. I., “A W-Band Monolithic Integrated Active Hot and Cold Noise Source,” Microwave Theory and Techniques, IEEE Transactions on, vol. 62, no. 3, Art. no. 3, 2014.

U. J. Lewark, A. Tessmann, S. Wagner, A. Leuther, T. Zwick, and I. Kallfass, “A 220 to 320 GHz Broadband Active Frequency Multiplier-by-Eight MMIC,” in Proc. European Microwave Integrated Circuit Conf., Rome, pp. 1--4, 2014.

S. Koenig et al., “20 Gbit/s Wireless Bridge at 220 GHz Connecting Two Fiber-Optic Links,” Optical Communications and Networking, IEEE/OSA Journal of, vol. 6, no. 1, Art. no. 1, 2014.

W. Freude et al., “Wireless Communications on THz Carriers Takes Shape,” in Proc. 16th Int. Conf. on Transparent Optical Networks, Graz, pp. 1--4, 2014.

I. Kallfass, “High-Frequency Millimetre-Wave Circuits for Wireless Communications,” Workshop What Are the Roles of Photonics and Electronics in Millimetre-Wave Multigigabit Wireless Communications, European Microwave Conf., 2013.

B. Baldischweiler et al., “Characterization of a DC to 40 GHz SPDT switch based on GaAs mHEMT technology at cryogenic temperature,” in Proc. European Microwave Week, Nuremberg, pp. 1--4, 2013.

U. J. Lewark, J. Antes, J. Walheim, J. Timmermann, T. Zwick, and I. Kallfass, “Link budget analysis for future E-band gigabit satellite communication links (71-76 and 81-84 Ghz),” CEAS Space Journal, pp. 1--6, 2013.

A. Dyskin, S. Wagner, D. Ritter, and I. Kallfass, “Performance Comparison for Millimeter-Wave Single-Pole Double Throw Switches,” in Proc. IEEE Int. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), pp. 1--5, 2013.

I. Kallfass, “Prospects and Challenges of Modern Semiconductor Technologies in Power Electronic Applications,” 36. Sitzung des gemeinsamen Leitungsgremiums Rechnergestützter Schaltungs- und Systementwurf (RSS-LG) Fachaussschuß3.5 GI Fachbereich 8 GMM Fachausschuß8.2 ITG, 2013.

E. Weissbrodt, M. Schlechtweg, O. Ambacher, and I. Kallfass, “W-Band Active Loads and Switching Front End MMICs for Radiometer Calibration,” Int. Journal of Microwave and Wireless Technologies, vol. 5, pp. 293--299, 2013.

I. Kallfass, “Active Integrated Circuits in Millimeter-Wave Applications,” in Proc. Microwave Integrated Circuits and Systems, Workshop on RF, analog, millimeterwave integrated circuits and systems, Israel Institute of Technology, Haifa, Israel, 2013.

S. Koenig et al., “100 Gbit/s Wireless Link with mm-Wave Photonics,” in Proc. OFC, Anaheim, 2013.

V. Radisic, K. M. K. H. Leong, X. Mei, S. Sarkozy, W. Yoshida, and W. R. Deal, “Power Amplification at 0.65 THz Using InP HEMTs,” IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 3, Art. no. 3, 2012, doi: 10.1109/TMTT.2011.2176503.

I. Kallfass, S. Diebold, and E. Weissbrodt, “Radiometrische Kalibrierungseinrichtung mit monolithisch integriertem Mehrfachschalter,” DE102011016732B3, 2012

D. Schwantuschke, P. Brückner, R. Quay, M. Mikulla, O. Ambacher, and I. Kallfass, “A 40 to 60 GHz Broadband High-power Amplifier MMIC in 100 nm AlGaN/GaN HEMT Technology,” in Proc. European Microwave Conf., Amsterdam, pp. 1--4, 2012.

J. Laengst et al., “A Balanced 175-240 GHz Amplifier MMIC using Airbridge Transmission Lines,” in Proc. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Dublin, pp. 1--4, 2012.

U. J. Lewark, A. Tessmann, S. Wagner, A. Leuther, T. Zwick, and I. Kallfass, “255 to 330 GHz Active Frequency-Tripler MMIC,” in Proc. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Dublin, pp. 1--4, 2012.

S. Diebold et al., “W-Band MMIC Radar Modules for Remote Detection of Vital Signs,” in Proc. European Microwave Conf., Amsterdam, 2012.

R. Weber et al., “An H-Band Low-Noise Amplifier MMIC in 35 nm Metamorphic HEMT Technology,” in Proc. European Microwave Conf. (EuMC), Amsterdam, pp. 1--4, 2012.

E. Weissbrodt, A. Leuther, M. Schlechtweg, I. Kallfass, and O. Ambacher, “Highly Integrated Switching Calibration Front-End MMIC with Active Loads for W-Band Radiometers,” in Proc. European Microwave Conf., Amsterdam, pp. 1--4, 2012.

I. Kallfass, “Active Integrated Circuits for Terahertz Communication,” CLASTECH Symposium and Exhibition, El Segundo, CA, 2012.

S. Kraus, I. Kallfass, R. E. Makon, R. Driad, M. Moyal, and D. Ritter, “A 20-GHz Bipolar Latched Comparator With Improved Sensitivity Implemented in InP HBT Technology,” IEEE Transactions on Microwave Theory and Techniques, vol. 59, no. 3, Art. no. 3, 2011, doi: 10.1109/TMTT.2011.2104974.

S. Kraus, I. Kallfass, R. E. Makon, R. Driad, M. Moyal, and D. Ritter, “A 10-GS/s multibit delta-sigma analog-to-digital converter in an InP HBT technology,” in 2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2011), 2011, pp. 1–4. doi: 10.1109/COMCAS.2011.6105929.

R. Weber and I. Kallfass, “Oszillator mit Ohmsch einstellbarer Schwingfrequenz,” EP2384542B1, 2011

I. Kallfass, “Berührungslose Bestimmung von Lebenszeichen mit Hilfe von Millimeterwellen-Radar,” VDE-ITG-Fachausschuss 7.2: Funksysteme Funk und Leben: Medizintechnik, Ambient Assisted Living, Karlsruhe, 2011.

R. Weber, U. Lewark, A. Leuther, and I. Kallfass, “A W-Band x12 Multiplier MMIC With Excellent Spurious Suppression,” Microwave and Wireless Components Letters, IEEE, vol. 21, no. 4, Art. no. 4, 2011, doi: 10.1109/LMWC.2011.2106486.

S. Kraus, I. Kallfass, R. E. Makon, R. Driad, M. Moyal, and D. Ritter, “A 20-GHz Bipolar Latched Comparator with Improved Sensitivity Implemented in InP HBT Technology,” IEEE Trans. on Microwave Theory and Techniques, vol. 59, no. 3, Art. no. 3, 2011.

J. Antes et al., “MMIC based wireless data transmission of a 12.5 Gbit/s signal using a 220 GHz carrier,” in Proc. European Micrwoave Integrated Circuit Conf., Manchester, pp. 238--241, 2011.

S. Diebold, H. Massler, S. Wagner, A. Tessmann, A. Leuther, and I. Kallfass, “140 GHz solid-state amplifier with on-chip tunable output matching,” in Proc. Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), pp. 1--4, 2011.

I. Kallfass, “Submillimetre MMIC design in state of the art MHEMT technology,” in workhop Proc. Advanced III-V MMIC Design Techniques, European Microwave Conf., Manchester, 2011.

B. Aja et al., “Cryogenic Low-Noise mHEMT-Based MMIC Amplifiers for 4 - 12 GHz Band,” Microwave and Wireless Components Letters, IEEE, vol. 21, no. 11, Art. no. 11, 2011, doi: 10.1109/LMWC.2011.2167502.

J. Antes et al., “Systemkonzept und Realisierung einer Millimeterwellen-Richtfunkstrecke mit Datenraten über 12,5 Gbit/s,” VDE-ITG-Fachtagung Mobilkommunikation 16, vol. Mobilkommunikation. Technologien und Anwendungen : Vorträge der 16. ITG-Fachtagung, no. ITG-Fachbericht 230, ISBN: 978-3-8007-3352-1, Art. no. ITG-Fachbericht 230, ISBN: 978-3-8007-3352-1, 2011.

U. J. Lewark, A. Tessmann, H. Massler, A. Leuther, and I. Kallfass, “Active single ended frequency multiplier-by-nine \MMIC\ for millimeter-wave imaging applications,” in Proc. Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), pp. 1--4, 2011, doi: 10.1109/INMMIC.2011.5773324.

U. Lewark, J. Antes, H. Massler, A. Leuther, and I. Kallfass, “Active Frequency Multiplier MMICs for W-Band Signal Sources in Millimeter-Wave Communication Systems,” in Proc. 12. GMM / ITG-Fachtagung ANALOG, Erlangen, 2011.

D. Schwantusche, C. Haupt, R. Kiefer, M. Mikulla, I. Kallfass, and R. Quay, “A 56-65 GHz High-power Amplifier MMIC using 100 nm AlGaN/GaN Dual-gate HEMTs,” in Proc. European Micrwoave Integrated Circuit Conf., Manchester, pp. 1217--1220, 2011.

S. Kraus et al., “High linearity 2-bit current steering InP/GaInAs DHBT digital-to-analog converter,” in 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, pp. 1–4. doi: 10.1109/ICIPRM.2010.5516140.

S. Kraus, R. E. Makon, I. Kallfass, R. Driad, M. Moyal, and D. Ritter, “Sensitivity of a 20-GS/s InP DHBT latched comparator,” in 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, pp. 1–4. doi: 10.1109/ICIPRM.2010.5515962.

V. Radisic et al., “A 50 mW 220 GHz power amplifier module,” in 2010 IEEE MTT-S International Microwave Symposium, 2010, pp. 45–48. doi: 10.1109/MWSYM.2010.5515248.

D. Lopez-Diaz et al., “Subharmonically Pumped 210 GHz I/Q Mixers,” in Proc. IEEE Compound Semiconductor IC Symposium, Monterey, 2010.

A. Leuther et al., “Metamorphic HEMT Technology for Submillimter-Wave MMIC Applications,” in Proc. 22nd International Conference on Indium Phosphide and Related Materials, Piscataway, NJ, pp. 425--429, 2010.

I. Kallfass, A. Tessmann, H. Massler, P. Pahl, and A. Leuther, “An All-Active MMIC-Based Chip Set for a Wideband 260 - 304 GHz Receiver,” in Proc. 5th European Microwave Integrated Circuit Conf., Paris, 2010.

S. Koch, M. Guthoerl, I. Kallfass, A. Leuther, and S. Saito, “A 120-145 GHz Heterodyne Receiver Chipset Utilizing the 140 GHz Atmospheric Window for Passive Millimeter-Wave Imaging Applications,” Solid-State Circuits, IEEE Journal of, vol. 45, no. 10, Art. no. 10, 2010, doi: 10.1109/JSSC.2010.2057830.

V. Vassilev et al., “MMIC-based Receiver Components for MM-wave Radiometry,” in Proc. 35th International Conference on Infrared, Millimeter and THz Waves, Rome, Italy, 2010.

A. Huelsmann et al., “Integrated Circuits beyond 100 GHz for Stand-Off Detection of Concealed Weapons,” in Proc. 5th Security Research Conference, Berlin, pp. 74--77, 2010.

M. Abbasi et al., “A Broadband 60-to-120 GHz Single-Chip MMIC Multiplier Chain,” in Proc. IEEE MTT-S International Microwave Symposium, Boston, pp. 441--444, 2009.

I. Kallfass et al., “The Metamorphic HEMT and Its Applications in Remote Sensing,” in Proc. 5th ESA Workshop on Millimetre Wave Technology and Applications & 31st ESA Antenna Workshop, ESTEC, Noordwijk, 2009.

S. Chartier et al., “Advanced mHEMT MMICs for 220 GHz High-Resolution Imaging Systems,” physica status solidi C6, no. 6, Art. no. 6, 2009.

I. Kallfass et al., “A 144 GHz Power Amplifier MMIC With 11 dBm Output Power, 10 dB Associated Gain and 10 \% Power-Added Efficiency,” in Proc. IEEE MTT-S International Microwave Symposium, Boston, pp. 429--432, 2009.

H. Zirath et al., “Integrated receivers up to 220 GHz utilizing GaAsmHEMT technology,” in Proc. IEEE International Symposium on Radio-Frequency Integration Technology, Singapore, 2009.

A. Huelsmann et al., “Advanced mHEMT technologies for space applications,” in Proc. 20th International Symposium on Space Terahertz Technology, Charlottesville, 2009.

S. Koch and I. Kallfass, “Transceiver Structure,” 20090215406, 2009

A. Tessmann et al., “Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar,” IEEE J. Solid-State Circuits, vol. 43, no. 10, Art. no. 10, 2008.

B. M. Motlagh, S. E. Gunnarsson, S. Cherednichenko, H. Zirath, I. Kallfass, and A. Leuther, “Integration of 210-GHz Resistive MMIC Mixers with On-Chip Double-Slot Antenna,” submitted for publication, IEEE Trans. on Microwave Theory and Techniques, 2008.

I. Kallfass, H. Massler, A. Tessmann, A. Leuther, M. Schlechtweg, and G. Weimann, “A Broadband Frequency Sixtupler MIMIC for the W-Band with \textgreater7 dBm Output Power and \textgreater6 dB Conversion Gain,” in Proc. IEEE MTT-S Int. Microwave Symp., Honolulu, Hawai, pp. 2169--2172, 2007.

I. Kallfass, H. Massler, and A. Leuther, “A 210 GHz, Subharmonically-Pumped Active FET Mixer MMIC for Radar Imaging Applications,” in Proc. IEEE Compound Semiconductor Integrated Circuit Symposium CSICS, Portland, pp. 71--74, 2007.

I. Kallfass, C. Schick, H. Schumacher, and T. J. Brazil, “A Universal Large-Signal Model for Hetero Field-Effect Transistors,” in Proc. 12th GaAs Symposium, European Microwave Week, Amsterdam, pp. 55--58, 2004.

P. Abele et al., “32 GHz bandwidth distributed amplifier MMICs based on N-channel SiGe MODFETs,” in Proc. International Semiconductor Device Research Symposium, Washington D.C., pp. 55--56, 2003.

P. Abele et al., “32 GHz MMIC distributed amplifier based on N-channel SiGe MODFETs,” Electronics Letters, vol. 39, no. 20, Art. no. 20, 2003.

I. Kallfass et al., “A SiGe HEMT Mixer IC with Low Conversion Loss,” in Proc. 11th GaAs Symposium, European Microwave Week, Munich, Germany, pp. 513--516, 2003.

I. Kallfass, M. Zeuner, U. König, H. Schumacher, and T. J. Brazil, “A Model for SiGe MODFETs with Improved Large-Signal Quality and Frequency Range,” in Proc. 10th GaAs Symposium, European Microwave Week, Milano, Italy, 2002.

Y. Umeda, T. Enoki, K. Osafune, H. Ito, and Y. Ishii, “High-yield design technologies for InAlAs/InGaAs/InP-HEMT analog-digital ICs,” IEEE Transactions on Microwave Theory and Techniques, vol. 44, no. 12, Art. no. 12, 1996, doi: 10.1109/22.554560.