This image shows Ingmar Kallfass

Ingmar Kallfass

Prof. Dr.-Ing.

Institute Director
Institute of Robust Power Semiconductor Systems

Contact

+49 711 685 68747
 +49 711 685 58747
Business card (VCF)

Pfaffenwaldring 47
70569 Stuttgart
Germany
Room: 1.173

  1. J. Weimer, N. Weimer, J. Nuzzo, and I. Kallfass, “Latent Heat Storage for Fast-Charging, High Power Density Battery Chargers,” IEEE Trans. on Emerging and Selected Topics in Power Electronics, 2023.
  2. B. Schoch, D. Wrana, L. Manoliu, M. Kuri, A. Tessmann, and I. Kallfass, “E-Band Active Upconverter Module with Tunable LO Feedthrough,” in Proc. IEEE Radio and Wireless Symposium, 2023.
  3. K. Munoz-Baron and I. Kallfass, “Comprehensive Analysis of a Transistor-Based On-State Voltage Measurement Circuit for Online Condition Monitoring of Power Modules,” in Proc. Applied Power Electronics Conferrence (APEC), Orlando, Mar. 2023.
  4. D. Koch and I. Kallfass, “A High Power Density Intelligent GaN DC/DC Power Module with Integrated Sensors for 48/24 V to 12 V, 100 A Applications,” in Proc. Applied Power Electronics Conference (APEC), Orlando, Mar. 2023.
  5. M. Weiser and I. Kallfass, “A Fast On-State Drain-to-Source Voltage Amplifier for the Dynamic Characterization of Fast-Switching Power Transistors,” in Proc. Applied Power Electronics Conference (APEC), Orlando, Mar. 2023.
  6. D. Wrana, S. Haussmann, B. Schoch, L. John, A. Tessmann, and I. Kallfass, “Effects of Spurious Tones from Frequency-Multiplicative Carrier Generation in a Superheterodyne 300 GHz Transmit Frontend,” in Proc. IEEE Radio and Wireless Symposium, 2023.
  7. J. Weimer, D. Koch, R. Schnitzler, and I. Kallfass, “Thermal Impedance Calibration for Rapid and Non-Invasiv Calorimetric Soft-Switching Loss Characterization,” IEEE Trans. on Power Electronics, 2023.
  8. T. Ufschlag, B. Schoch, and I. Kallfass, “Inherent Gain Interference of a Two-Tone-Test,” in Proc. IEEE Radio and Wireless Symposium, 2023.
  9. D. Wrana, B. Schoch, A. Tessmann, and I. Kallfass, “Investigation of the Influence of LO Leakage in a Double-Balanced Homodyne E-Band Quadrature Transmitter,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1–4, 2022.
  10. J. Woermann, S. Ebeling, B. Schoch, A. Tessmann, and I. Kallfass, “Demonstration of a Novel, Incoherent, Self-mixing Radar Principle Applied to a Wideband E-band Frontend,” in Proc. IEEE Int. Microwave Symposium, 2022.
  11. H. Amrouch et al., “Intelligent Methods for Test and Reliability,” in Proc. Design, Automation and Test in Europe Conference (DATE), Mar. 2022.
  12. K. Sharma, J. Hueckelheim, K. Munoz-Baron, and I. Kallfass, “Comparison of Different Methods for the Characterization of Online Junction Temperature of a Gallium-Nitride Power Transistor,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Berlin, Mar. 2022.
  13. A. Garcia-Luque et al., “Frequency-Characterization and Modeling of AlGaN/GaN HEMTs for High-Power Applications,” in Proc. Int. Workshop on Integrated Nonlinear Microwave and Millimetrewave Circuits (INMMIC), 2022.
  14. D. Wrana, Y. Leiba, L. John, B. Schoch, A. Tessmann, and I. Kallfass, “Short-Range Full-Duplex Real-Time Wireless Link for IEEE802.15.3d Applications,” in Proc. IEEE Radio and Wireless Symposium, San Diego, CA, 2022, doi: 10.1109/SHaRC51853.2021.9375827.
  15. G. Ducournau et al., “300 GHz links testing enabled by Photonics-based THz generation techniques,” French-German Terahertz Conference, La Grande Motte, May 2022.
  16. M. Pradhan, M. Moser, M. Alomari, J. N. Burghartz, and I. Kallfass, “Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure,” in Proc. 52nd European Solid-State Device Research Conference (ESSDERC), Milano, Sep. 2022.
  17. B. Schoch, F. Wiewel, D. Wrana, L. Manoliu, S. Haussmann, and I. Kallfass, “Performance Optimization of an E-Band Communication Link using Open-Loop Predistortion,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1–4, 2022.
  18. I. Kallfass et al., “RF-Characterisation of AlGaN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates,” GaN Marathon, Venice, 2022.
  19. H. Gibson, R. Henneberger, A. Tessmann, I. Kallfass, L. Manoliu, and B. Schoch, “A satellite tracking system at 78GHz using the over-moded TE21 ground-station antenna pattern,” in Proc. 32nd International Symposium on Space Terahertz Technology (ISSTT), 2022.
  20. A. Gatzastras, C. Volmer, and I. Kallfass, “A Differential Travelling-Wave Amplifier in a 22nm FD-SOI CMOS Technology,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1–4, 2022.
  21. M. Moser et al., “Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates,” in Proc. 17th European Microwave Integrated Circuits Conference (EuMIC), Milano, 2022.
  22. M. Riefer, J. Winkler, S. Strache, and I. Kallfass, “Substrate Integrated Temperature Sensing for Bondless Power Modules,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Berlin, Mar. 2022.
  23. J. Weimer, D. Koch, and I. Kallfass, “Compact Half-Bridge Module for a Charger Application Utilizing GaN Power Devices with Integrated Driver,” in. Proc. PCIM Europe, Nuremberg, Germany, May 2022.
  24. L. Manoliu et al., “Atmospheric Effects on Wideband-Modulated E-band Long-Range Communication Links,” in Proc. Kleinheubacher Tagung, pp. 1–4, 2022.
  25. L. Manoliu et al., “Measurements of Atmospheric Attenuation in an Outdoor Wireless E/W-Band Communication Link,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1–4, 2022.
  26. W. Johannes, S. Stanko, and I. Kallfass, “Investigation of a RF Frontend at 35 GHz for Joint Broadband-Radar and Communication Applications,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1–4, 2022.
  27. S. Haussmann, D. Wrana, B. Schoch, A. Tessmann, R. Henneberger, and I. Kallfass, “Polarisation Multiplex in 300 GHz WirelessCommunication Link using Orthomode Transducer,” in Proc. 52nd European Microwave Conference (EuMC), Milano, 2022.
  28. L. Manoliu et al., “Ultra-High Throughput E/W-Band Downlink CubeSat Mission,” in Proc. 73rd International Astronautical Congress, Paris, France, pp. 1–14, Sep. 2022.
  29. A. Sharma, J. Weimer, D. Koch, I. Kallfass, and T. Huesgen, “Asymmetric Packages for Optimal Performance of GaN-HEMT using PCB Fabrication Technology,” in Proc. PCIM Europe Conference, 2021.
  30. G. Ducournau et al., “300 GHz transmission of E/V bands data-flows in the ThoR project,” Workshop European Conference on Antennas and Propagation (EuCAP), 2021.
  31. J. Woermann, A. Dyskin, S. Chartier, and I. Kallfass, “A Passively-Coupled 39 GHz Colpitts Quadrature VCO in SiGe HBT Technology,” in Proc. European Microwave Int. Circuits Conf. EuMIC, London, pp. 1–4, 2021.
  32. M. C. J. Weiser, J. Hückelheim, and I. Kallfass, “A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTs,” IEEE Transactions on Electron Devices, vol. 68, Art. no. 9, Sep. 2021, doi: 10.1109/TED.2021.3098498.
  33. I. Kallfass et al., “Towards the Exploratory In-Orbit Verification of an E/W-Band Satellite,” Int. Wireless Symposium (IWS), Nanjing, May 2021.
  34. I. Dan et al., “A Superheterodyne Transmit Receive Chipset for Beyond 5G Network Integration,” in Proc. European Microwave Int. Circuits Conf. EuMIC, London, 2021.
  35. T. Huesgen, A. Sharma, J. Weimer, D. Koch, and I. Kallfass, “Thermisch und elektrisch optimiertes Leiterplatten-Prepackage für 100V 100A GaN Leistungshalbleiter,” in Proc. MikroSystemTechnik Kongress, Ludwigsburg, Nov. 2021.
  36. I. Kallfass, “A Cubesat Payload for the In-Orbit Verification of an E/W-Band Satellite Communication Link,” 14th UK, Europe, China Millimeter Waves and Terahertz Technology Workshop (UCMMT), Lancaster, UK, Sep. 2021.
  37. D. Koch, M. Ruess, D. Maier, and I. Kallfass, “Optimization of Self-Oscillating Power Converter Based on GaN-HEMTs for Contactless Energy Transfer,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021.
  38. I. Kallfass, “300 GHz Fixed Wireless Links,” Terahertz Technologies and Applications Summer School, TU Eindhoven, May 2021.
  39. D. Koch and I. Kallfass, “Gate Driver Concept for Parallel Operation of Low-Voltage High-Current GaN Power Transistors for Mild-Hybrid Applications,” in Proc. Applied Power Electronics Conference (APEC), Phoenix, Mar. 2021.
  40. M. Jandt, M. Eberspaecher, and I. Kallfass, “Radar imaging based on multiple incoherent antennas,” SPIE Symposium on Optics/Photonics in Security and Defence, Millimetre Wave and Terahertz Sensors and Technology, 2021.
  41. D. Wrana, L. John, S. Wagner, and I. Kallfass, “Short Range Wireless Transmisson Using a 295-315-GHz Superheterodyne THz Link Targeting IEEE802.15.3d Applications,” in Proc. European Microwave Conf. EuMIC, London, pp. 1–4, 2021.
  42. J. Weimer, D. Koch, and I. Kallfass, “Accuracy Study of Calorimetric Switching Loss Energy Measurements for Wide Bandgap Power Transistors,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.
  43. K. Munoz-Baron, K. Sharma, M. Nietzsche, and I. Kallfass, “Characterization of Electrical Parameters for Health Monitoring in SiC MOSFETs during AC Power Cycling,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021.
  44. A. Gatzastras, H. Massler, A. Leuther, S. Chartier, and I. Kallfass, “Implementation of Slow-Wave Thin-Film Microstrip Transmission Lines in a 35nm InGaAs Technology,” in Proc. European Microwave Int. Circuits Conf. EuMIC, London, pp. 1–4, 2021.
  45. M. Basler et al., “GaN Active Diode for Low-Loss Rectification,” in. Proc. 33nd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.
  46. L. Manoliu, B. Schoch, M. Koller, J. Wieczorek, S. Klinkner, and I. Kallfass, “High-speed FPGA-Based Payload Computer for an In-Orbit Verification of a 71--76 GHz Satellite Downlink,” 2021 IEEE Space Hardware and Radio Conference (SHaRC), pp. 21–24, Jan. 2021, doi: 10.1109/SHaRC51853.2021.9375827.
  47. C. Groetsch, I. Dan, L. John, S. Wagner, and I. Kallfass, “A Compact 281-319 GHz Low-Power Downconverter MMIC for Superheterodyne Communication Receivers,” IEEE Trans. Terahertz Science and Technology, vol. 11, Art. no. 2, Mar. 2021, doi: 10.1109/TTHZ.2020.3038043.
  48. K. Munoz-Baron and I. Kallfass, “Online Monitoring of Degradation Sensitive Electrical Parameters in Inverter Operation,” in Proc. Applied Power Electronics Conferrence (APEC), Phoenix, Mar. 2021.
  49. B. Schoch et al., “E-Band Transmitter with 3W Complex Modulated Signal Output Power Performance,” in Proc. European Microwave Conf. EuMIC, London, pp. 1–4, 2021.
  50. D. Koch, A. Sharma, J. Weimer, M. Weiser, T. Huesgen, and I. Kallfass, “A 48 V, 300 kHz, High Current DC/DC-Converter Based on Paralleled, Asymmetrical and Thermally Optimized PCB Embedded GaN Packages with Integrated Temperature Sensor,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.
  51. K. Sharma, K. Munoz-Baron, J. Ruthardt, and I. Kallfass, “Online Junction Temperature Monitoring of Wide Bandgap Power Transistors using Quasi Turn-on Delay as TSEP,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021.
  52. D. Koch, S. Araujo, J. Weimer, and I. Kallfass, “Automated Calorimetric Measurement with a Peltier Element for Switching Loss Characterization,” in Proc. PCIM Europe Conference, 2021.
  53. S. Moench et al., “PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors,” IEEE Transactions on Power Electronics, vol. 36, Art. no. 1, 2021.
  54. K. Munoz-Baron and I. Kallfass, “Online Health Monitoring in Power Modules for Inverter Topologies using Isolated Parameter Acquisition,” in Proc. IEEE Design Methodologies Conference (DMC), Bath, UK, Jul. 2021.
  55. R. Loeffler, J. Hueckelheim, D. Koch, and I. Kallfass, “Development of a powerful gate-driver-circuit for high-frequency control of a DC/DC-converter based on gallium nitride transistors,” in Proc. PCIM Europe Conference, 2021.
  56. D. Koch, S. Araujo, J. Weimer, and I. Kallfass, “Design Methodology for Ultra-Compact Rogowski-Coils for Current Sensing in Low-Voltage High-Current GaN Based DC/DC-Converters,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.
  57. J. Weimer and I. Kallfass, “Thermal Topology Optimization for High Power Density Power Electronic Systems in Passively Cooled Housings,” in Proc. IEEE Design Methodologies Conference (DMC), Bath, UK, Jul. 2021.
  58. L. Yan and I. Kallfass, “A Compact Model Adopting the EKV Model for a Silicon Vertical Power MOSFET,” in Proc. Applied Power Electronics Conferrence (APEC), Phoenix, Mar. 2021.
  59. M. Weiser and I. Kallfass, “Extension on ASM HEMT Model with Trapping Effects in GaN Power Devices,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.
  60. D. Dell, J. Weimer, and I. Kallfass, “Additive Manufacturing of 10 W Power Converter with High Power Density,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.
  61. J. Weimer, D. Koch, and I. Kallfass, “Determination of Hard- and Soft-Switching Losses for Wide Bandgap Power Transistors with Noninvasive and Fast Calorimetric Measurements,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.
  62. B. Schoch, A. Tessmann, A. Leuther, P. Szriftgiser, G. Ducournau, and I. Kallfass, “Two-Tone Intermodulation Performance of a 300 GHz Power Amplifier MMIC,” in Proc. IEEE Radio and Wireless Symposium, 2021.
  63. L. Manoliu, R. Henneberger, A. Tessmann, J. Seidel, M. Eppard, and I. Kallfass, “Impairments of Atmospheric Attenuation on a Wideband E-Band Outdoor Communication Link,” in Proc. European Microwave Conf. EuMIC, London, pp. 1–4, 2021.
  64. C. M. Groetsch, I. Dan, L. John, S. Wagner, and I. Kallfass, “Comparison of active dual-gate and passive mixers for terahertz applications,” IET Circuits, Devices and Systems, vol. 15, Art. no. 4, 2021, doi: https://doi.org/10.1049/cds2.12032.
  65. J. Weimer, D. Koch, M. Nietzsche, J. Haarer, J. Roth-Stielow, and I. Kallfass, “Miniaturization and Thermal Design of a 170 W AC/DC Battery Charger Utilizing GaN Power Devices,” IEEE Open Journal of Power Electronics, vol. 3, pp. 13–25, Dec. 2021, doi: 10.1109/OJPEL.2021.3137093.
  66. K. Sharma, S. Kamm, K. Muñoz Barón, and I. Kallfass, “Non-Destructive Failure Analysis of Power Devices via Time-Domain Reflectometry,” in. Proc. CASE, Lille, France, May 2021.
  67. K. Munoz-Baron, J. Hueckelheim, and I. Kallfass, “Accurate online junction temperature estimation using acquisition circuit temperature for on-state voltage measurement,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.
  68. L. Manoliu, S. Kumari, and I. Kallfass, “Variable-Coded Modulation and Error-Free Transmission Algorithms for an Exploratory In-Orbit Verification of an E-Band (71-76 GHz) Satellite Link,” in 27th Ka and Broadband Communications Conference, Sorrento, 2021.
  69. S. Moench, R. Reiner, P. Waltereit, O. Ambacher, and I. Kallfass, “Capacitive Characteristics of GaN Half-Bridges for Various Si and SOI Substrate Terminations,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.
  70. M. Riefer, J. Winkler, S. Strache, and I. Kallfass, “Implementation of current-source Gate Driver with open-loop slope shaping for SiC-MOSFETs,” in Proc. PCIM Europe Conference, 2021.
  71. M. Basler et al., “High Power Density DC-DC Converters Using Highly Integrated Monolithic Half-Bridge GaN ICs,” in Proc. PCIM Europe Conference, 2021.
  72. M. T. Koller, L. M. Loidold, L. Manoliu, J. Meier, I. Kallfass, and S. Klinkner, “The EIVE CubeSat - Developing a Satellite Bus for a 71-76 GHz E-Band Transmitter Payload,” 35th Annual Small Satellite Conference, Logan, Utah, Aug. 2021.
  73. K. Muñoz Barón, K. Sharma, M. Nietzsche, P. Ziegler, and I. Kallfass, “Threshold voltage instability under application-oriented power cycling conditions for SiC power devices,” in. Proc. PCIM Europe, Nuremberg, Germany, May 2020.
  74. D. Koch, S. Moench, R. Reiner, J. Hueckelheim, K. Munoz-Baron, and I. Waltereit, P.and Kallfass, “Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power IC,” in. Proc. PCIM Europe, Nuremberg, Germany, May 2020.
  75. S. Moench et al., “PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs with On-Package Gate and DC-Link Capacitors,” IEEE Transactions on Power Electronics Letters, 2020.
  76. K. Muñoz Barón, K. Sharma, M. Nietzsche, P. Ziegler, D. Koch, and I. Kallfass, “Characterization of Threshold Voltage for Application-Oriented Power Cycling Conditions for Wide-Bandgap Power Devices,” in. Proc. PCIM Europe digital days, Nuremberg, Germany, pp. 1–7, Jul. 2020.
  77. J. C. Scheytt, D. Wrana, M. Bahmanian, and I. Kallfass, “Ultra-Low Phase Noise Frequency Synthesis for THz Communication Using an Optoelectronic PLL,” in. Porc. 3rd International Workshop on Mobile Terahertz Systems (IWMTS), Essen, Germany, 2020.
  78. S. Moench, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass, “A 600 V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020.
  79. I. Dan et al., “A 300 GHz Wireless Link Employing a Photonic Transmitter and Active Electronic Receiver with a Transmission Bandwidth of 54 GHz,” IEEE Transactions on Terahertz Science and Technology, vol. 10, Art. no. 3, Mar. 2020, doi: 10.1109/TTHZ.2020.2977331.
  80. I. Kallfass, “THz Interconnect,” Photonic Wireless Communication Workshop Gothenborg Research Center, Huawei, Dec. 2020.
  81. I. Kallfass, “Active Electronic Transceivers for THz Communication Systems,” ACRC Semiconductor Webinars, Israel Institute of Technology, Sep. 2020.
  82. J. Weimer and I. Kallfass, “Thermal Study on Leadframe Dimensioning for High Power Dissipation and Low Inductance Commutation Cells,” in. Proc. PCIM Europe, Nuremberg, Germany, May 2020.
  83. K. Sharma, K. Muñoz Barón, J. Hückelheim, D. Koch, and I. Kallfass, “Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter,” in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, 2020.
  84. M. Basler, S. Reiner, R Moench, P. Waltereit, R. Quay, I. Kallfass, and O. Ambacher, “Large-Area Lateral AlGaN/GaN-on-Si Field-Effect Rectifier with 0.2 V Turn-On Voltage,” IEEE Electron Device Letters, vol. 41, Art. no. 7, May 2020, doi: 10.1109/LED.2020.2994656.
  85. H. Ghanem et al., “Non-linear analysis of a Broadband Power Amplifier at 300 GHz,” in Proc. European Microwave Int. Circuits Conf. EuMIC, Utrecht, pp. 1–4, 2020.
  86. M. Basler et al., “A GaN-based Current Sense Amplifier for GaN HEMTs with Integrated Current Shunts,” in. Proc. 32nd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020.
  87. L. Yan and I. Kallfass, “A General Model Translation Approach for Vertical Power MOSFETs Based on BSIM3 Model,” in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, 2020.
  88. I. Kallfass, I. Dan, P. Szriftgiser, and G. Ducournau, “High Capacity Terahertz Communication Links Combining Photonic and Electronic Technologies in the Transmit-Receive Frontend,” in Proc. 9th International Workshop on Terahertz Technology and Applications, Kaiserslautern, 2020.
  89. J. Weimer, D. Koch, M. Nietzsche, M. Zehelein, and I. Kallfass, “Efficiency Requirements for Passively Cooled Converters with Thermal Measurement Based 3D-FEM Simulation,” 22nd European Conference on Power Electronics and Applications (EPE′20 ECCE Europe), pp. 1–8, 2020, doi: 10.23919/EPE20ECCEEurope43536.2020.9215643.
  90. K. Sharma et al., “Characterisation of the Junction Temperature of Gallium Nitride Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter,” in 10th International Conference on Power Electronics, Machines and Drives, Nottingham, UK, 2020.
  91. B. Schoch, U. Mohr, S. Klinkner, and I. Kallfass, “Towards a Cubesat Mission for a Wideband Data Transmission in E-Band,” in Radio Wireless Week RWW, San Antonio, TX, pp. 1–4, 2020.
  92. I. Dan et al., “300 GHz Wireless Link Employing a Photonic Transmitter and Active Electronic Receiver with a Transmission Bandwidth of 54 GHz,” IEEE Transactions on Terahertz Science and Technology, p. 1, 2020, doi: 10.1109/TTHZ.2020.2977331.
  93. J. Weimer and I. Kallfass, “Efficiency Requirements for Passively Cooled Converters with Thermal Measurement Based 3D-FEM Simulation,” in Proc. Conference on Power Electronics and Applications EPE, Lyon, 2020.
  94. K. Sharma and I. Kallfass, “Robust Approach for Characterization of Junction Temperature of SiC power devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter,” in Proc. Applied Power Electronics Conf. (APEC), New Orleans, 2020.
  95. D. Koch et al., “Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power IC,” in. Proc. PCIM Europe, Nuremberg, Germany, May 2020.
  96. K. Sharma et al., “Robust Approach for Characterization of Junction Temperature of SiC power devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter,” in Proc. Applied Power Electronics Conf. (APEC), New Orleans, pp. 1532–1536, Mar. 2020.
  97. M. T. Koller et al., “The exploratory in-orbit verification of an E-band link (EIVE) cubesat project,” 10th Nano Satellite Symposium, Istanbul, 2020.
  98. S. Moench et al., “Monolithic Integrated AlGaN/GaN Power Converter Topologies on High-Voltage AlN/GaN Superlattice Buffer,” Physica Status Solidi A: Applications and Materials Science, pp. 1–13, Sep. 2020, doi: 10.1002/pssa.202000404.
  99. I. Kallfass, “Future of high-frequency electronics for wireless communications,” 1st BEST-NEST International Workshop, Center for Broad Explorations on Spectrum Technologies for Navigation, Environment, Surveillance, and Transportation (BEST NEST), Worcester Polytechnic Institute, MA, Dec. 2020.
  100. L. Yan and I. Kallfass, “Adopting the BSIM3 Model with Thermal Extension for a Si Vertical Power MOSFET,” in Proc. 19th IEEE International Power Electronics and Motion Control Conference (PEMC), Gliwice, Poland, 2020.
  101. A. Gatzastras, H. Massler, A. Leuther, S. Chartier, and I. Kallfass, “A Three Stage Gain Cell Topology with an Active Ultra-Wideband Input Matching in H-Band,” in Proc. European Microwave Int. Circuits Conf. EuMIC, Utrecht, pp. 1–4, 2020.
  102. M. Basler, R. Moench, S.and Reiner, P. Waltereit, R. Quay, I. Kallfass, and O. Ambacher, “Monolithic Integration of Inductive Components in a GaN-on-Si Technology,” in. Proc. International Conference on Integrated Power Electronics Systems (CIPS), Berlin, 2020.
  103. S. Moench et al., “A 600 V GaN-on-Si Power IC with Integrated Gate Driver, Freewheeling Diode, Temperature and Current Sensors and Auxiliary Devices,” in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, 2020.
  104. I. Dan, G. Ducournau, S. Hisatake, P. Szriftgiser, R.-P. Braun, and I. Kallfass, “A superheterodyne 300 GHz wireless link for ultra-fast terahertz communication systems,” International Journal of Microwave and Wireless Technologies, vol. 12, Art. no. 7, 2020, doi: 10.1017/S1759078720000495.
  105. I. Dan, G. Ducournau, S. Hisatake, P. Szriftgiser, R. Braun, and I. Kallfass, “A Terahertz Wireless Communication Link Using a Superheterodyne Approach,” IEEE Transactions on Terahertz Science and Technology, vol. 10, Art. no. 1, Jan. 2020, doi: 10.1109/TTHZ.2019.2953647.
  106. P. Harati and I. Kallfass, “Analogue feed-forward carrier recovery for millimetre-wave broadband wireless links,” IET Microwaves, Antennas and Propagation, vol. 14, Art. no. 5, 2020.
  107. E. R. Bammidi and I. Kallfass, “An Analog Costas Loop MMIC in 130 nm SiGe BiCMOS Technology for Receiver Synchronization of QPSK and BPSK Modulated Signals,” in Proc. European Microwave Int. Circuits Conf. EuMIC, Utrecht, pp. 1–4, 2020.
  108. B. Schoch, A. Tessmann, and I. Wagner, S. Kallfass, “E-band Balanced Broadband Driver Amplifier MMIC with 1.8 THz Gain-Bandwidth Product,” in Proc. German Microwave Conference (GeMIC), Stuttgart, pp. 1–4, 2020.
  109. J. Acuna, V. Afanasenkoa, T. Rupp, M. Sonner, and I. Kallfass, “Fast Thermomechanical Simulation of Power Module Die-Attach Layers using Neural Networks,” in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, 2020.
  110. L. Manoliu, B. Schoch, and I. Kallfass, “FPGA Based Reconfigurable On-Board Payload Processing for an Exploratory In-Orbit Verification of an E-Band (71-76 GHz) Satellite Link (EIVE),” in Proc. 5th ESA SpacE FPGA Users Workshop, Noordwijk, Mar. 2020.
  111. B. Schoch, A. Tessmann, A. Leuther, S. Wagner, I. Kallfass, “300 GHz broadband power amplifier with 508 GHz gain-bandwidth product and 8 dBm output power,” in Proc. IEEE Int. Microwave Symposium, Boston, 2019.
  112. L. Yan, T. Li, and I. Kallfass, “Characterization and modeling of the reverse behavior of a vertical power MOSFET,” Microwave and Optical Technology Letters, vol. 63, Art. no. 8, Nov. 2019, doi: 10.1002/mop.32119.
  113. P. Harati and I. Kallfass, “Time Domain Characterization of Frequency Dividers,” IEEE Microwave and Wireless Components Letters, pp. 1–4, 2019.
  114. S. Moench, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass, “Integrated Current Sensing in GaN Power ICs,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019.
  115. J. Winkler, J. Homoth, and I. Kallfass, “Novel Approach for Temperature and Current Sensing for Wide Bandgap Materials,” in Proc. Strategic Materials Conference (SMC), Munich, 2019.
  116. I. Kallfass, “Active Electronic Transceivers for THz Communication Systems,” Huawei Workshop THz Communication and Sensor Technologies, Paris, Sep. 2019.
  117. C. Grötsch, S. Wagner, A. Leuther, D. Meier, and I. Kallfass, “A Highly Linear FMCW Radar Chipset in H-Band with 50 GHz Bandwidth,” in Proc. IEEE Int. Microwave Symposium, Boston, 2019.
  118. I. Kallfass and I. Dan, “Active Electronic Transceivers for THz Communication Systems,” IBM Research, Zuerich, colloquium presentation, 2019.
  119. I. Hammoud, N. Bauer, I. Kallfass, and R. Kennel, “Optimized Capacitive Active Ripple Compensation Topology for a 3.7 kW Single Phase High Power Density On-Board Charger of Electric Vehicles,” Electrical Engineering, Springer, vol. 101, Art. no. 3, 2019, doi: https://rd.springer.com/article/10.1007/s00202-019-00818-5.
  120. I. Dan et al., “A 300GHz Quadrature Down-Converter S-MMIC for Future Terahertz Communication,” in 2019 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), Nov. 2019, pp. 1–6. doi: 10.1109/COMCAS44984.2019.8958300.
  121. S. Mönch, R. Reiner, P. Waltereit, D. Meder, M. Masler, R. Quay, O. Ambacher, I. Kallfass, “Asymmetrical Substrate-Biasing Effects and 350 V Operation of Symmetrical Monolithic Normally-Off GaN-on-Si Half-Bridges,” in Proc. 7th IEEE Workshop on Wide Bandgap Power Devices and Applications, pp. 1–6, 2019.
  122. I. Kallfass, “Satellite Communication in E,W-Band - Motivation, Viability, Compatibility,” ITG Fachausschuss HF2 Funksysteme Oeffentliche Diskussionssitzung Trends und Entwicklungen in der Weltraumnutzung, 2019.
  123. U. Mohr, B. Schoch, I. Kallfass, and S. Klinkner, “Exploratory In-orbit Verification of a Wideband E/W-Band Data Downlink,” 12th Pico- and Nano-Satellite Workshop, Wuerzburg, Germany, 2019.
  124. I. Dan, G. Ducournau, S. Hisatake, P. Szriftgiser, R. P. Braun, and I. Kallfass, “A Superheterodyne 300 GHz Wireless Link for Ultra-Fast Terahertz Communication Systems,” in Proc. European Microwave Conf., Paris, 2019.
  125. S. M. Dilek, E. Bammidi, and I. Kallfass, “E-band simplex wireless data transmission and bandwidth-dependent performance analysis based on OFDM signals,” in Proc. German Microwave Conference (GeMIC), Stuttgart, pp. 1–4, 2019.
  126. J. Acuna, T. Rupp, M. Sonner, M. Klingler, B. Metais, and I. Kallfass, “Influence of Power Cycle Turn-On Duration on the Lifetime of Power Module Die-Attach Layers,” in Proc. 25th Int. Workshop on Thermal Investigations of ICs and Systems (Therminic), Lecco, 2019.
  127. J. Weimer and I. Kallfass, “Soft-Switching Losses in GaN and SiC Power Transistors Based on New Calorimetric Measurements,” in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, pp. 455–458. doi: 10.1109/ISPSD.2019.8757650.
  128. I. Dan, S. Hisatake, P. Szriftgiser, R. P. Braun, I. Kallfass, and G. Ducournau, “Towards super-heterodyne THz links pumped by photonic local oscillators,” in Proc. 44rd Int. Conf. on Infrared, Millimeter and Terahertz Waves (IRMMW), Paris, 2019.
  129. I. Kallfass et al., “High System Gain E-Band Link in a Wideband Aircraft-to-Ground Data Transmission,” in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, pp. 1–4, 2019.
  130. A. Dyskin, S. Wagner, and I. Kallfass, “A Compact Resistive Quadrature Low Noise Ka-Band VCO SiGe HBT MMIC,” in Proc. 12th German Microwave Conference (GeMIC), Stuttgart, pp. 1–4, 2019.
  131. D. Koch, S. Araujo, and I. Kallfass, “Accuracy Analysis of Calorimetric Loss Measurement for Benchmarking Wide Bandgap Power Transistors under Soft-Switching Operation,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia), May 2019.
  132. G. Ducournau, P. Szriftgiser, I. Dan, V. Chinni, M. Zaknoune, and I. Kallfass, “100 Gbit/s, 300 GHz Wireless Communication Link Combining Photonic Transmitter and Electronic Receiver,” in Proc. 44rd Int. Conf. on Infrared, Millimeter and Terahertz Waves (IRMMW), Paris, 2019.
  133. C. M. Groetsch and I. Wagner, S. andKallfass, “An Active Gate Pumped Frequency Upconverter for Terahertz Frequencies,” in Proc. German Microwave Conference (GeMIC), Stuttgart, pp. 1–4, 2019.
  134. C. M. Groetsch, S. Wagner, and I. Kallfass, “An Active Gate Pumped Frequency Upconverter for Terahertz Frequencies,” in Proc. German Microwave Conference (GeMIC), Stuttgart, pp. 1–4, 2019.
  135. M. Basler, S. Moench, R. Reiner, P. Waltereit, R. Quay, and I. Kallfass, “A GaN-on-Si Based Logic, Driver and DC-DC Converter Circuit with Closed-Loop Peak Current-Mode Control,” in. Proc. PCIM Europe, Nuremberg, Germany, May 2019.
  136. E. R. Bammidi, A. Javed, K. Krishnegowda, and I. Kallfass, “A Differential Traveling Wave Active Power Divider in 130 nm SiGe:BiCMOS Technology for Application in Receiver Synchronization,” in Proc. European Microwave Int. Circuits Conf. EuMIC, Paris, pp. 1–4, 2019.
  137. L. Manoliu, C. M. Groetsch, and I. Kallfass, “Design and Optimization of Mixers Using Load-Pull Analysis of Higher Order Intermodulation Products,” in Proc. German Microwave Conference (GeMIC), Stuttgart, pp. 1–4, 2019.
  138. I. Kallfass, “300 GHz HEMT Transceivers and Comm/Imaging Applications,” Summer THz Array Radar Topology Workshop (START), Caltech, Pasadena, 2019.
  139. W. Johannes, S. Stanko, M. Caris, and I. Kallfass, “Investigation of a new Bistatic FMCW-Receiver at 94 GHz with Wireless Synchronization,” in Proc. German Microwave Conference (GeMIC), Stuttgart, pp. 1–4, 2019.
  140. B. Schoch, L. Manoliu, J. Keim, S. Chartier, S. Klinkner, and I. Kallfass, “Link budget analysis of E- and W-band satellite services,” in 25th Ka and Broadband Communications Conference, Sorrento, pp. 1–8, 2019.
  141. S. M. Dilek, B. Schoch, and I. Kallfass, “Performance Analysis of Real-Time Full-Duplex E-band Link,” in Proc. European Microwave Conf. EuMC, Paris, pp. 1–4, 2019.
  142. J. Winkler, J. Homoth, H. Bartolf, and I. Kallfass, “Study on transient Light Emission of SiC Power MOSFETs regarding the Sensing of Source-Drain Currents in hard switched Power Electronic Applications,” in. Proc. PCIM Europe, Nuremberg, Germany, 2019.
  143. I. Dan et al., “A 300 GHz Quadrature Down-Converter S-MMIC for Future Terahertz Communication,” in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, pp. 1–4, 2019.
  144. L. Yan, T. Li, and I. Kallfass, “Characterization and Modeling of the Reverse Behavior of a Vertical Power MOSFET,” Microwave and Optical Technology Letters, pp. 1–7, 2019, doi: 10.1002/mop.32119.
  145. B. Schoch, A. Tessmann, A. Leuther, S. Wagner, and I. Kallfass, “260 GHz Broadband Power Amplifier MMIC,” in Proc. German Microwave Conference (GeMIC), Stuttgart, pp. 1–4, 2019.
  146. D. Humphreys et al., “An overview of the Meteracom Project,” Wireless World Research Forum, London, 2019.
  147. J. Winkler, J. Homoth, and I. Kallfass, “Electroluminescence-based Junction Temperature Measurement Approach for SiC Power MOSFETs,” IEEE Transactions on Power Electronics, vol. 35, Art. no. 3, Jul. 2019, doi: 10.1109/TPEL.2019.2929426.
  148. I. Kallfass, “High Capacity Millimeterwave Wireless Data Links,” VDI Fachkonferenz 5G in der Automation, Baden-Baden, 2019.
  149. M. Basler et al., “A Pseudo-Complementary GaN-Based Gate Driver with Reduced Static Losses,” in Proc. 7th IEEE Workshop on Wide Bandgap Power Devices and Applications, pp. 1–6, 2019.
  150. A. Dyskin and I. Kallfass, “Feasibility Study of the Feed-Forward Carrier Recovery Technique for E-band Integrated Receivers,” IET Circuits, Devices and Systems, pp. 1–9, 2019.
  151. C. M. Groetsch, S. Wagner, L. John, and I. Kallfass, “A Dual Gate Downconverter for H-Band Employing An Active Load,” in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, pp. 1–4, 2019.
  152. S. M. Dilek, P. Harati, R. Henneberger, and I. Kallfass, “Performance Analysis of E-band Duplex Transceiver Based on Waveguide Diplexer Filters,” in Proc. European Microwave Conf. EuMC, Madrid, pp. 1–4, 2018.
  153. I. Kallfass, “MMIC-based THz frontends for wireless communication beyond 100 Gbps,” EPSRC THz Communications Meeting, London, 2018.
  154. C. Salcines, S. Moench, and I. Kallfass, “Four Terminal \C-V\ Characterization Technique for Lateral Power \GaN-on-Si\ \HEMTs\ Based on 3-Port \S-Parameter\ Measurements,” in CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems (CIPS 2018), Stuttgart, Germany, Mar. 2018.
  155. A. Dyskin and I. Kallfass, “Phase noise prediction for static frequency dividers and ring oscillators,” Electronics Letters, pp. 1–2, 2018.
  156. C. Salcines, B. Holzinger, and I. Kallfass, “Characterization of intrinsic capacitances of power transistors under high current conduction based on pulsed S-Parameter measurements,” in Proc. 6th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Atlanta, 2018.
  157. D. Mueller, J. Schaefer, A. Lipp, A. Leuther, T. Zwick, and I. Kallfass, “A High-Efficiency Broadband WR3 Bond Wire On-Chip Antenna,” in Proc. European Conf. on Antennas and Propagation (EuCAP), London, pp. 1–4, 2018.
  158. S. Moench et al., “Towards Highly-Integrated High-Voltage Multi-MHz GaN-on-Si Power ICs and Modules,” in. Proc. PCIM Europe, Nuremberg, Germany, 2018.
  159. I. Kallfass et al., “Wideband Data Transmission in E-Band Between an Aircraft and a Ground Station,” in Proc. 9th Advanced Satellite Multimedia Systems Conference (ASMS) and 15th Signal Processing for Space Communications Workshop (SPSC), Berlin, 2018.
  160. D. Mueller, J. Schaefer, H. Massler, M. Ohlrogge, T. Zwick, and I. Kallfass, “Impact of Ground Via Placement in On-Wafer Contact Pad Design up to 325 GHz,” IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 8, Art. no. 8, 2018, doi: 10.1109/TCPMT.2018.2811482.
  161. J. Walter, J. Acuna, and I. Kallfass, “Design and Implementation of an Integrated Current Sensor for a Gallium Nitride Half-Bridge,” in. Proc. PCIM Europe, Nuremberg, Germany, 2018.
  162. C. Grötsch, A. Tessmann, and I. Kallfass, “An Active Multiplier-by-Six S-MMIC for 500 GHz,” in Proc. 43rd Int. Conf. on Infrared, Millimeter and Terahertz Waves (IRMMW), Nagoya, pp. 1–4, 2018.
  163. E. R. Bammidi and I. Kallfass, “Design of an Error Detector Circuit for BPSK Costas Loop for Carrier Synchronization in Millimeter-Wave Receivers,” in Proc. German Microwave Conference (GeMIC), Freiburg, pp. 1–4, 2018.
  164. P. Harati, A. Dyskin, and I. Kallfass, “Analog Carrier Recovery for Broadband Wireless Communication Links,” in Proc. European Microwave Conf. EuMC, Madrid, pp. 1–4, 2018.
  165. J. Schaefer, G. Eren, D. Mueller, I. Kallfass, and T. Zwick, “Tx Frontend Concept for FMCW Radar with Frequency Scanning Antenna at 240 GHz,” Int. Workshop on Antenna Technology (iWAT), Nanjing, 2018.
  166. J. Winkler, J. Homoth, and I. Kallfass, “Exploiting Photoluminescence for New Implementations of SiC Power Semiconductor Devices,” in. Proc. 31st International Electric Vehicles Symposium and Exhibition, EVS 31, and International Electric Vehicle Technology Conference 2018, EVTeC, Kobe, 2018.
  167. C. Salcines, S. Khandelwal, and I. Kallfass, “Characterization and modeling of the impact of the bulk potential in the dynamic and static behavior of power GaN-on-Si HEMTs,” in Proc. 19th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL, 2018.
  168. C. Salcines, A. Kruglov, and I. Kallfass, “A novel technique to accurately extract extended high voltage output characteristics of power MOSFETs from dynamic measurements,” in Proc. 6th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Atlanta, 2018.
  169. I. Dan, B. Schoch, G. Eren, S. Wagner, A. Leuther, and I. Kallfass, “Considerations on Local Oscillator Isolation in a Terahertz Wireless Link Used for Future Communication Systems,” in Proc. 43rd Int. Conf. on Infrared, Millimeter and Terahertz Waves (IRMMW), Nagoya, 2018.
  170. D. Mueller et al., “A Novel Unit Cell for Active Switches in the Millimeter-Wave Frequency Range,” Int. Journal of Infrared, Millimeter, and Terahertz Waves, vol. 39, Art. no. 2, Feb. 2018.
  171. C. Grötsch, S. Wagner, A. Leuther, D. Meier, and I. Kallfass, “Ultra-Broadband Frequency Multiplier MMICs for Communication and Radar Applications,” in Proc. 13th European Microwave Integrated Circuits Conf. EuMIC, Madrid, pp. 1–4, 2018.
  172. D. Mueller, F. Boes, A. Tessmann, A. Leuther, T. Zwick, and I. Kallfass, “Crosstalk Analysis and Correction in On-Wafer Measurements at WR-3 Band Frequencies,” in Proc. German Microwave Conference (GeMIC), Freiburg, pp. 1–4, 2018.
  173. J. Winkler, J. Juergen, S. Schoser, J. Homoth, and I. Kallfass, “Utilization of Parasitic Luminescence from Power Semiconductor Devices for Current Sensing,” in. Proc. PCIM Europe, Nuremberg, Germany, 2018.
  174. S. M. Dilek, P. Harati, E. R. Bammidi, and I. Kallfass, “E-Band Transceiver System Characterization Based on Bandwidth Dependent Linear Impairments,” in Proc. German Microwave Conference (GeMIC), Freiburg, pp. 1–4, 2018.
  175. J. Acuna, W. Janes, and I. Kallfass, “Very Fast Short Circuit Protection for Gallium-Nitride High Electron Mobility Transistors Based on Integrated Current Sensor,” in Proc. European Conf. on Power Electronics (EPE), Riga, 2018.
  176. I. Kallfass, I. Dan, S. Rey, A. Tessmann, A. Leuther, and T. Kuerner, “MMIC Electronic Steerable 4-Channel Phased-Array Transmit-Receive Frontend for 300 GHz Wireless Personal Area Networks,” in Proc. 8th International Workshop on Terahertz Technology and Applications, Kaiserslautern, 2018.
  177. L. Yan and I. Kallfass, “A General Model Translation Approach for Vertical Structure Power MOSFETs Based on BSIM3 Model,” in Proc. IEEE International Power Electronics and Application Conference and Exposition (PEAC), 2018.
  178. D. Mueller, P. Pahl, A. Tessmann, A. Leuther, T. Zwick, and I. Kallfass, “A WR3-band 2-bit Phase Shifter Based on Active SPDT Switches,” IEEE Microwave and Wireless Component Letters, vol. 28, Art. no. 9, Sep. 2018.
  179. I. Dan, S. Shiba, E. Rosello, P. Harati, S. Dilek, and I. Kallfass, “Measurement of Complex Transfer Function of Analog Transmit-Receive Frontends for Terahertz Wireless Communications,” in Proc. 47th European Microwave Conf. EuMC, Nuremberg, pp. 1–4, 2017.
  180. D. Mueller et al., “A 200 - 300 GHz 1:2 Active Power Divider MMIC,” in Proc. 42 International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW), Cancun, pp. 1–4, 2017.
  181. P. Pahl, S. Wagner, H. Massler, A. Leuther, I. Kallfass, and T. Zwick, “Efficiency Optimized Distributed Transformers for Broadband Monolithic Millimeter-Wave Integrated Power Amplifier Circuits,” IEEE Trans. Microwave Theory and Techniques, vol. PP, pp. 1–13, 2017.
  182. P. Harati et al., “Is E-Band Satellite Communication Viable?,” IEEE Microwave Magazine, vol. 18, Art. no. 7, Oct. 2017, doi: 10.1109/MMM.2017.2738898.
  183. E. R. Castillo, P. Harati, S. Shiba, P. Hügler, C. Waldschmidt, and I. Kallfass, “Spatial-Frequency-Scanning Data Transmission for mmW Multi-User Wireless Communication Systems,” in Proc. 47th European Microwave Conf. EuMC, Nuremberg, pp. 1–4, 2017.
  184. A. Dyskin and I. Kallfass, “Analytical Approach of SiGe HBT Static Frequency Divider Design for Millimeter-Wave Frequency Operation,” IEEE Trans. Microwave Theory and Techniques, vol. 66, Art. no. 3, Dec. 2017, doi: 10.1109/TMTT.2017.2775244.
  185. I. Dan, S. Rey, T. Merkle, T. Kuerner, and I. Kallfass, “Experimental study of the receive signal quality dependence on modulation format and Baud rate in a 300 GHz Fixed Wireless Link,” in Proc. IEEE Radio and Wireless Symposium, Phoenix, 2017.
  186. J. C. Scheytt, A. R. Javed, E. R. Bammidi, K. KrishneGowda, I. Kallfass, and R. Kraemer, “100 Gbps Wireless System and Circuit Design Using Parallel Spread-Spectrum Sequencing,” Frequenz, vol. 9-10, Art. no. 71, 2017.
  187. I. Kallfass, S. M. Dilek, and I. Dan, “Signal Quality Impairments by Analog Frontend Non-Idealities in a 300 GHz Wireless Link,” in Proc. European Conf. on Antennas and Propagation (EuCAP), Paris, pp. 1–4, 2017.
  188. A. Dyskin, P. Harati, and I. Kallfass, “E-to-X-band Phase Detector For Analog Carrier Recovery Techniques,” in Proc. IEEE Int. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), pp. 1–5, 2017.
  189. S. Moench, P. Hillenbrand, P. Hengel, and I. Kallfass, “Pulsed Measurement of Sub-Nanosecond 1000 V/ns Switching 600 V GaN HEMTs using 1.5 GHz Low-Impedance Voltage Probe and 50 Ohm Scope,” in Proc. 5th IEEE Workshop on Wide Bandgap Power Devices and Applications, pp. 1–6, 2017.
  190. C. Grötsch, S. Wagner, A. Tessmann, and I. Kallfass, “On-chip Post-Production Tuning of I/Q Frequency Converters Using Adjustable Coupler Terminations,” in Proc. 12th European Microwave Integrated Circuits Conf. EuMIC, Nuremberg, pp. 1–4, 2017.
  191. I. Kallfass, J. Antes, A. Tessmann, T. Zwick, and R. Henneberger, “Multi-Gigabit High-Range Fixed Wireless Links at High Millimeterwave Carrier Frequencies,” in Proc. IEEE Radio and Wireless Symposium, Phoenix, 2017.
  192. A. Dyskin, P. Harati, and I. Kallfass, “Layout and Interconnect Optimization for Low Power and High Sensitivity Operation of E-Band SiGe HBT Frequency Dividers,” IEEE Microwave and Wireless Components Letters, vol. 28, Art. no. 1, 2017, doi: 10.1109/LMWC.2017.2772169.
  193. D. Mueller et al., “Bandwidth Optimization Method for Reflective-Type Phase Shifters,” IEEE Trans. on Microwave Theory and Techniques, vol. 66, Art. no. 4, 2017, doi: 10.1109/TMTT.2017.2779156.
  194. H. Afewerki, C. Lautensack, N. Boettcher, and I. Kallfass, “Design Approach and Analysis of a MOSFET with Monolithic Integrated EMI Snubber for Low Voltage Automotive Applications,” in Proc. Int. Symp. and Exhibition on Electromagnetic Compatibility (EMC Europe), pp. 1–6, 2017.
  195. C. Salcines, I. Kallfass, H. Kakitani, and A. Mikata, “Full Characterization of High Voltage Power Transistor Intrinsic Capacitances based on a Single 2-Port S-Parameters Measurement,” in Proc. 19th Conference on Power Electronics and Applications EPE, Warsaw, 2017.
  196. T. Merkle et al., “Testbed for phased array communications from 275 to 325 GHz,” in 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), Oct. 2017, pp. 1–4. doi: 10.1109/CSICS.2017.8240474.
  197. I. Dan, E. Rosello, P. Harati, S. Dilek, I. Kallfass, and S. Shiba, “Measurement of complex transfer function of analog transmit-receive frontends for terahertz wireless communications,” in 2017 47th European Microwave Conference (EuMC), Oct. 2017, pp. 1009–1012. doi: 10.23919/EuMC.2017.8231017.
  198. I. Dan, C.M. Groetsch, S. Shiba, I. Kallfass, “Investigation of Local Oscillator Isolation in a 300 GHz Wireless Link,” in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, pp. 1–6, 2017.
  199. I. Dan, B. Schoch, G. Eren, S. Wagner, A. Leuther, and I. Kallfass, “A 300 GHz MMIC-based Quadrature Receiver for Wireless Terahertz Communications,” in Proc. 42 International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW), Cancun, 2017.
  200. D. Mueller et al., “Quad-Channel Beam Switching WR3-Band Transmitter MMIC,” in Proc. SPIE Defense + Security, Anaheim, 2017.

Lectures

Mikroelektronik 1 (B.Sc.)

Robust Power Semiconductor Systems I (M.Sc.)

Robust Power Semiconductor Systems II (M.Sc.)

Microwave Analog Frontend Design - I (M.Sc.)

Microwave Analog Frontend Design - II (M.Sc.)

Seminar Selected Topics on Power and Microwave Electronics (M.Sc.)

Microwave Engineering (M.Sc.)

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