Contact
Pfaffenwaldring 47
70569 Stuttgart
Deutschland
Room: 1.444
Subject
Research in the field of characterization and modeling of GaN transistor technologies within the ENSPECT and GaN4EmoBiL projects.
Focus areas: Modeling of radiation-induced effects, characterization and modeling of bidirectional GaN HEMTs, adaptation and optimization of the physics-based ASM HEMT model.
Lecture exercises for the course “Robust Power Semiconductor Systems 2.”