This image shows Javier Acuna

Javier Acuna

M.Sc.

Research Assistant
Institute of Robust Power Semiconductor Systems

Contact

Pfaffenwaldring 47
70569 Stuttgart
Germany

Subject

Computational modelling of fatigue damage of power modules under realistic load profiles

Short-circuit protection of wide-bandgap devices

Thermo-mechanical modelling

J. Acuna and I. Kallfass, “Substrate Choice and Thermal Optimization of a Half-bridge Power Module based on Chip Scale GaN HEMTs” in Proc. 19 th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), 11-14 Sept. 2017, Warsaw, Poland.

J. Acuna, A. Seidel and I. Kallfass, “Design and Implementation of a Gallium-Nitride based Power Module for Light Electro-Mobility Applications” in Proc. IEEE 2 nd Annual Southern Power Electronics Conference (SPEC), 4-7 Dec. 2017, Puerto Varas, Chile.

Short-circuit protection of wide-bandgap devices

J. Walter, J. Acuna and I. Kallfass, “Design and Implementation of an Integrated Current Sensor for a Gallium Nitride Half-Bridge”, to appear in Proc. International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM),  5-7 June 2018, Nuremberg, Germany

Thermo-Mechanical Reliability of Power Modules (BSc. or Study Thesis)

Short Circuit Protection of Wide-Bandgap Devices (BSc. or Study Thesis)

More details here

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