Millimeterwellenschaltungen und -Systeme

Institut für Robuste Leistungshalbleitersysteme

Das ILH forscht an integrierten Millimeter- und Submillimeterwellen-Schaltungen für Breitbandkommunikation und hochauflösende Sensorik.

  • Systementwurf und Modellierung von Störfaktoren
  • Messungen

 

Forschung am ILH
Das Forschungs-Pie-Chart beschreibt die Aufteilung und den Zusammenhang zwischen den verschiedenen Forschungsaktivitäten am ILH im Bereich der Millimeterwellen-integrierten Schaltungen und Systeme.

Circuit Design

in verschiedenen Halbleitertechnologien wie GaAs, SiGe, GaN und CMOS.

00:38

Messungen mit CrossLink

00:38

Publikationen

  1. 2026

    1. 1. T. Ufschlag, B. Schoch, L. Gebert, A. Leuther, A. Tessmann, and I. Kallfass, “First Analog Linearization of a 300-GHz Power Amplifier: Demonstration and Quantification,” IEEE Transactions on Terahertz Science and Technology, 2026, doi: 10.1109/TTHZ.2026.3679945.
    2. 2. L. Manoliu et al., “Implementation and characterization of a W-band SatCom ground terminal receiver with 5~GHz reception bandwidth and mechanical beam steering,” Ceas Space Journal, vol. 18, Art. no. 1, 2026.
    3. 3. S. Haussmann et al., “Empirical Nonlinear Behavioral Modeling for THz Amplifiers,” IEEE Transactions on Microwave Theory and Techniques, 2026, doi: 10.1109/tmtt.2026.3692347.
    4. 4. M. Günter, B. G. Özat, M. P. Scharpf, M. J. Neff, J. N. Wörmann, and I. Kallfass, “Third-Order Intermodulation Products Generation Circuit for Q-Band Analog Predistortion Application,” in 2026 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), IEEE, 2026, pp. 77–80. doi: 10.1109/PAWR69496.2026.11408625.
    5. 5. T. Ufschlag, B. Schoch, L. Gebert, D. Wrana, A. Tessmann, and I. Kallfass, “Reactively Matched WR-3.4 Power Amplifier With a Large-Signal Bandwidth of 40 % Enabled by an Impedance-Optimized Transforming Wilkinson,” IEEE Transactions on Terahertz Science and Technology, Feb. 2026, doi: 10.1109/TTHZ.2025.3595813.
    6. 6. T. Ufschlag et al., “Broadband Drain-Bar-Supplied H-Band Power Amplifier With 70 GHz 3-dB Bandwidth of the Output-Related 1-dB Compression Point,” 2026 IEEE Topical Conference on RF Microwave Power Amplifiers for Radio and Wireless Applications Pawr 2026, pp. 25–28, 2026.
    7. 7. R. Schnitzler, T. Fink, D. Koch, M. C. J. Weiser, and I. Kallfass, “Comprehensive Impact Evaluation of Gate Switching Instability on Switching Losses in SiC MOSFETs,” IEEE Transactions on Electron Devices, 2026, doi: 10.1109/TED.2026.3669878.
    8. 8. B. G. Özat, M. Günter, M. P. Scharpf, J. N. Wörmann, M. J. Neff, and I. Kallfass, “A 12-dB Gain Q-Band Vector-Modulator Phase Shifter in 130 nm SiGe HBT BiCMOS Technology,” in 2026 IEEE 26th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Jan. 2026, pp. 101–104. doi: 10.1109/SiRF69501.2026.11408665.
    9. 9. S. Koch et al., “ESCALAS: SiGe-BiCMOS RFICs with Built-In Self-Test and Analog Predistortion for Ka-, Q- and V-Band Satellite Payloads,” in 2026 17th German Microwave Conference (GeMiC), 2026, pp. 17–20. doi: 10.1109/GeMiC71240.2026.11516363.
    10. 10. B. G. Özat, M. P. Scharpf, M. Günter, M. Heckele, B. Schoch, and I. Kallfass, “A 6–85 GHz Non-Uniform Distributed Variable Gain Amplifier Achieving High Output Power and Efficiency in SiGe HBT Technology,” in 2026 17th German Microwave Conference (GeMiC), 2026, pp. 314–317. doi: 10.1109/GeMiC71240.2026.11516364.

  2. 2025

    1. 11. I. H. Aoulad, E. G. Carrizales, and I. Kallfass, “Switched Capacitors Flyback Converter,” in Proc. 19 th 2025 International Conference on Compatibility, Power Electronics, and Power Engineering (CPE-POWERENG), May 2025.
    2. 12. M. Weiser, U. Vogel, D. Miller, R. Schnitzler, T. Fink, and I. Kallfass, “Unraveling the Drain-Voltage Dependency of the Dynamic On-State Resistance of GaN-HEMTs,” in Proc. ECCE Europe, Birmingham, 2025.
    3. 13. L. Gebert et al., “A H-Band High-Pass Distributed Amplifier with a Bandwidth of 80 GHz and over 4 % PAE,” in Proc. German Microwave Conference (GeMIC), Dresden, pp. 1–4, 2025.
    4. 14. M. C. J. Weiser, J. Tausk, and I. Kallfass, “On-State Voltage Sensing of Fast-Switching Power Transistors: Evaluation, Challenges and Advanced Design Considerations,” IEEE Transactions on Power Electronics, pp. 1–11, 2025, doi: 10.1109/TPEL.2025.3562955.
    5. 15. M. J. Neff, B. G. Özat, J. N. Wörmann, P. Singhal, B. Schoch, and I. Kallfass, “2.5 to 64 GHz Nonuniform Distributed Power Detector in 130 nm SiGe BiCMOS,” 2025 20th European Microwave Integrated Circuits Conference Eumic 2025, pp. 274–277, 2025.
    6. 16. S. Haussmann, F. Euchner, B. Schoch, D. Wrana, A. Tessmann, and I. Kallfass, “Experimental review of wideband OFDM in electronic sub-mmW wireless communication,” International Journal of Microwave and Wireless Technologies, 2025.
    7. 17. L. Gebert et al., “A Superheterodyne 300 GHz InGaAs Receiver and Transmitter Chipset for 6G and Beyond Applications,” 2025 20th European Microwave Integrated Circuits Conference Eumic 2025, pp. 41–44, 2025.
    8. 18. T. Ufschlag et al., “Broadband H-Band Power Amplifier with Optimum Intermediate Splitter and Combiner Impedance,” 2025 IEEE Topical Conference on RF Microwave Power Amplifiers for Radio and Wireless Applications Pawr 2025, pp. 15–18, 2025.
    9. 19. T. Ufschlag, B. Schoch, L. Gebert, D. Wrana, A. Tessmann, and I. Kallfass, “Reactively Matched WR-3.4 Power Amplifier with a Large-Signal Bandwidth of 40% enabled by an Impedance-Optimized Transforming Wilkinson,” IEEE Transactions on Terahertz Science and Technology, 2025, doi: 10.1109/TTHZ.2025.3595813.
    10. 20. M. Moser et al., “Low-power AlGaN/GaN pressure sensors for harsh environmental conditions with high sensitivity,” Power Electronic Devices and Components, Mar. 2025, doi: 10.1016/j.pedc.2025.100076.
    11. 21. T. Ufschlag, B. Schoch, L. Gebert, D. Wrana, A. Tessmann, and I. Kallfass, “Gain Expansion Generator Based on a Reduced Conduction Angle for H-Band Applications,” Proceedings of the Austrian Workshop on Microelectronics Austrochip, Art. no. 2025, 2025.
    12. 22. T. Ufschlag et al., “Gallium-Nitride-Based E-Band Power Detector,” 2025 16th German Microwave Conference Gemic 2025, pp. 391–394, 2025.
    13. 23. M. Weiser, D. Koch, and I. Kallfass, “An Accurate Simulation Model for Silicon Carbide Power Devices Based on BSIM3 Including Thermal Effects and Package Parasitics,” in Proc. PCIM Europe Conference, 2025.
    14. 24. M. J. Neff, B. G. Oezat, Singhal. P., B. Schoch, and I. Kallfass, “Novel 2.5-64 GHz Nonuniform Distributed Power Detector in 130 nm SiGe BiCMOS,” in Proceedings European Microwave Integrated Circuits Conference (EuMIC), Utrecht, 2025.
    15. 25. T. Ufschlag et al., “Gallium-Nitride-Based E-Band Power Detector,” in Proc. German Microwave Conference (GeMIC), Dresden, pp. 1–4, 2025.
    16. 26. S. Haussmann, D. Wrana, L. Samara, T. Zugno, and I. Kallfass, “Towards System-Level Modeling of Broadband Sub-THz Amplifiers for Wireless Communication,” in Proc. IEEE Radio and Wireless Symposium, Jan. 2025.
    17. 27. L. Samara et al., “Sub-THz Power Amplifiers: Measurements, Behavioral Modeling and Predistortion Algorithms,” IEEE Trans. Terahertz Science and Technology, 2025.
    18. 28. M. Bosch, J. Nuzzo, D. Koch, and I. Kallfass, “Coaxial Gate Loop for Fast-Switching GaN Applications,” in Proc. ECCE Europe, Birmingham, 2025.
    19. 29. I. Kallfass, I. Dan, P. Szriftgiser, and G. Ducournau, “High Capacity Terahertz Communication Links Combining Photonic and Electronic Technologies in the Transmit-Receive Frontend,” Symposium on Radio and Optical Networks Convergence - Expectations and Challenges in Practical Applications Symposium on Radio and Optical Networks Convergence - Expectations and Challenges in Practical Applications, Waseda University, Tokio, Feb. 2025.
    20. 30. M. Haitz, C. Salcines, M. Basler, R. Reiner, S. Moench, and I. Kallfass, “A Novel Compact Model Describing Current-Voltage Characteristics of Monolithic Bidirectional GaN Power HEMTs,” in Proc. ECCE Europe, Birmingham, 2025.
    21. 31. R. Schnitzler, T. Fink, D. Koch, D. Halmer, and I. Kallfass, “Parameter Dependent Anaylsis of Gate Switching Instability in SiC MOSFETs,” in Proc. ECCE Europe, Birmingham, 2025.
    22. 32. L. Gebert et al., “A Superheterodyne 300 GHz InGaAs Receiver and Transmitter Chipset for 6G and Beyond Applications,” in Proceedings European Microwave Integrated Circuits Conference (EuMIC), Utrecht, 2025.
    23. 33. B. Schoch et al., “Intermodulation Distortion Analysis in Cascaded D-Band GaN Amplifiers,” in proc. Int. Conf. on Infrared, Millimeter, and Terahertz Waves (IRMMW), Espoo, Finland, pp. 1–4, 2025.
    24. 34. J. N. Wörmann and I. Kallfass, “Effects of Delay on the Hold-In and Pull-In Range of Quadrature and Binary Costas Loops for Ultrawideband Receiver Synchronization,” IEEE Transactions on Microwave Theory and Techniques, pp. 1–14, 2025, doi: 10.1109/TMTT.2025.3568039.
    25. 35. M. Eggert et al., “Qualification of the attitude control system of the E-band CubeSat EIVE,” Ceas Space Journal, vol. 17, Art. no. 2, 2025.
    26. 36. J. N. Wörmann and I. Kallfass, “Effects of Delay on the Hold-In and Pull-In Range of Quadrature and Binary Costas Loops for Ultrawideband Receiver Synchronization,” IEEE Transactions on Microwave Theory and Techniques, 2025, doi: 10.1109/TMTT.2025.3568039.
    27. 37. M. Rueß et al., “GaN half-bridges on electrical and thermal co-designed ceramic substrates,” Power Electronic Devices and Components, Jun. 2025, doi: 10.1016/j.pedc.2025.100091.
    28. 38. B. Schoch and I. Kallfass, “An In-Situ Time and Frequency Domain Instrumentation for Traceable Distortion Characterization of Terahertz Transceivers,” International Conference on Infrared Millimeter and Terahertz Waves Irmmw Thz, 2025.
    29. 39. R. Schnitzler, D. Koch, and I. Kallfass, “10 MHz Accelerated Gate-Switching Stress Tests Utilizing In-Situ Degradation Monitoring for SiC MOSFETs,” in Proc. PCIM Europe Conference, 2025.
    30. 40. L. Manoliu et al., “Implementation and characterization of a W-band SatCom ground terminal receiver with 5 GHz reception bandwidth and mechanical beam steering,” CEAS Space Journal, pp. 1–20, 2025, doi: 10.1007/s12567-025-00614-x.
    31. 41. S. Haussmann, F. Euchner, B. Schoch, D. Wrana, A. Tessmann, and I. Kallfass, “Experimental Performance of Wideband OFDM in Electronic Sub-mmW Wireless Communication,” IEEE Journal of Microwaves, 2025.
    32. 42. R. Kragl, K. Oberdieck, K. Spanos, S. Beushausen, and I. Kallfass, “Active Voltage Probe for Direct Measurement of Emitted Noise of Power Semiconductors,” in Proc. IEEE Energy Conversion Conference and Expo (ECCE 2025), 2025.
    33. 43. S. Haussmann, M. Guenter, A. Tessmann, and I. Kallfass, “H-Band Duplexing Filter for Duplex THz Communications,” in Proc. German Microwave Conference (GeMIC), Dresden, pp. 1–4, 2025.
    34. 44. M. Bosch, D. Koch, and I. Kallfass, “Nonlinear Output Capacitance of Bidirectional Gallium Nitride Power Switches,” in Proc. IEEE Applied Power Electronics Conference and Exposition (APEC), Atlanta, Georgia, Mar. 2025.
    35. 45. R. Kragl, K. Oberdieck, K. Spanos, S. Beushausen, and I. Kallfass, “Semiconductor-Focused Simulation Environment for Emitted Noise Sensitivity of MOSFET Parameters,” in Proc. International Symposium on ElectroMagnetic Compatibility in Europe (EMC Europe), Paris, 2025.
    36. 46. T. Fink, T. Schmalzried, D. Kuderna-Melgar, R. Schnitzler, D. Koch, and I. Kallfass, “Machine Learning-Based Degradation State Prediction of SiC MOSFETs Aged by Static Power Cycling Tests,” in Proc. ECCE Europe, Birmingham, 2025.
    37. 47. J. N. Wörmann, B. G. Özat, M. P. Scharpf, M. J. Neff, B. Schoch, and I. Kallfass, “A Tunable True Time Delay up to 50 GHz Based on HBT Pairs in Stacked Common Base Topology with Incorporated Delay Lines,” 2025 20th European Microwave Integrated Circuits Conference Eumic 2025, pp. 270–273, 2025.
    38. 48. L. Gebert et al., “A 300 GHz High-Pass Distributed Amplifier using a Quasi High-Pass Transmission Line Topology,” 2025 16th German Microwave Conference Gemic 2025, pp. 403–406, 2025.
    39. 49. F.-N. Stapelfeldt, T. Schmidt, B. Schoch, and V. Issakov, “A 9.1\% Peak Efficiency 243-318 GHz Frequency Doubler Using an In-Core Stepped-Impedance Network in 22 nm FDSOI CMOS,” European Solid State Circuits Conference, pp. 497–500, 2025.
    40. 50. B. Schoch et al., “Intermodulation Distortion Analysis in Cascaded D-Band GaN Amplifiers,” International Conference on Infrared Millimeter and Terahertz Waves Irmmw Thz, 2025.
    41. 51. L. Gebert et al., “A 300 GHz High-Pass Distributed Amplifier using a Quasi High-Pass Transmission Line Topology,” in 2025 16th German Microwave Conference (GeMiC), Mar. 2025, pp. 403–406. doi: 10.23919/GeMiC64734.2025.10979090.
    42. 52. J. Streit, S. Hadiuzzaman, R. Kragl, K. Oberdieck, M. Riefer, and I. Kallfass, “Online Parameter Identification and Current Balancing for Turn-Off of Paralleled SiC MOSFETs Using an Active Gate Driver,” in Proc. ECCE Europe, Birmingham, 2025.
    43. 53. A. Reck, D. Koch, and K. I., “Accuracy Comparison of Temperature Sensors for the Thermal Characterization of GaN Transistors,” in Proc. PCIM Europe Conference, 2025.
    44. 54. B. Schoch, D. Wrana, S. Haussmann, L. John, J. P. Teyssier, and I. Kallfass, “Multi-Waveguide Band Characterization of a 6G Terahertz Frontend,” in Proc. German Microwave Conference (GeMIC), Dresden, pp. 1–4, 2025.
    45. 55. J. Woermann, B. G. Oezat, M. Scharpf, M. J. Neff, B. Schoch, and I. Kallfass, “A Tunable True Time Delay up to 50 GHz Based on HBT Pairs in Stacked-Common Base Topology with Incorporated Delay Lines,” in Proceedings European Microwave Integrated Circuits Conference (EuMIC), Utrecht, 2025.
    46. 56. M. Ruess, D. Koch, and I. Kallfass, “Comparison of Compact Power Amplifier Designs for High Frequency Resonant Wireless Power Transfer Systems at 6.78 MHz Using High-Q Resonators,” in Proc. IEEE Applied Power Electronics Conference and Exposition (APEC), Atlanta, Georgia, Mar. 2025.
    47. 57. R. Schnitzler, D. Koch, T. Fink, M. Weiser, and I. Kallfass, “A Comprehensive Impact-Evaluation of Gate Switching Instability on Switching Losses in SiC MOSFETs,” IEEE Trans. on Electron Devices, 2025.
    48. 58. F.-N. Stapelfeldt, B. Schoch, D. Wrana, and V. Issakov, “Comparison of Wideband Low-Power H-Band Frequency Doublers with and Without a Driving Stage in 22 NM FDSOI CMOS,” IEEE MTT S International Microwave Symposium Digest, pp. 343–346, 2025.
    49. 59. T. Ufschlag et al., “Gallium-Nitride-Based E-Band Power Detector,” in 2025 16th German Microwave Conference (GeMiC), IEEE, Mar. 2025, pp. 391–394. doi: 10.23919/gemic64734.2025.10979155.

  3. 2024

    1. 60. D. Wrana et al., “Methodology to Accurately Replicate a Non-Planar Thin-Film Microstrip BEOL in 3D EM Simulation,” in Proc. IEEE Radio and Wireless Symposium, San Antonio, TX, Jan. 2024, doi: 10.1109/SHaRC51853.2021.9375827.
    2. 61. T. Kurner et al., “THz Communications and the Demonstration in the ThoR-Backhaul Link,” IEEE Transactions on Terahertz Science and Technology, pp. 1–14, 2024, doi: 10.1109/TTHZ.2024.3415480.
    3. 62. M. Ruess et al., “GaN Half-Bridges on Electrical and Thermal Co-Designed Ceramic Substrates,” Power Electronic Devices and Components (PEDC), Elsevier, 2024.
    4. 63. K. Munoz-Baron, J. Nuzzo, T. Fink, and I. Kallfass, “Application-Oriented Active Power Cycling of SiC MOSFET Power Modules with Multiple TSEP Acquisition,” in Proc. 47th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2024), 2024.
    5. 64. L. Gebert et al., “H-Band Resistive IQ-Mixer with Gate Bias above Threshold Voltage,” in Proc. German Microwave Conference (GeMIC), Duisburg, pp. 1–4, 2024.
    6. 65. S. Haussmann, D. Wrana, A. Tessmann, and I. Kallfass, “Channel Aggregation in THz Communication: Linearity Considerations in Full Electronic System,” in in Proc. 49th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Sep. 2024.
    7. 66. M. Moser et al., “Low-Power AlGaN/GaN Pressure Sensors with High Sensitivity,” GaN Marathon, 2024.
    8. 67. T. Ufschlag et al., “Integrated GaN Power Detector for High Power Millimeter-Wave Applications,” 2024 IEEE Radio and Wireless Week Rww 2024 2024 IEEE Topical Conference on RF Microwave Power Amplifiers for Radio and Wireless Applications Pawr 2024, pp. 74–77, 2024.
    9. 68. L. Gebert et al., “Subharmonically Pumped H-Band Resistive IQ-Mixer with Gate Bias Above Threshold Voltage,” 2024 15th German Microwave Conference Gemic 2024, pp. 304–307, 2024.
    10. 69. M. Kranz et al., “Lessons Learned during Preparation and Execution of the Satellite Operations of the E-band Technology Demonstration CubeSat EIVE,” Proceedings of the International Astronautical Congress Iac, pp. 213–222, 2024.
    11. 70. L. Gebert et al., “A High-Pass Distributed Amplifier Operating from 215GHz - 315GHz in a 35nm InGaAs mHEMT Technology,” 2024 19th European Microwave Integrated Circuits Conference Eumic 2024, pp. 54–57, 2024.
    12. 71. M. C. J. Weiser, V. Köhnlein, and I. Kallfass, “A Flexible Setup for Dynamic On-State Resistance Measurements of GaN HEMTs With One-Factor-at-a-Time Capability,” IEEE Transactions on Power Electronics, Jun. 2024, doi: 10.1109/TPEL.2024.3376313.
    13. 72. B. Schoch, D. Wrana, S. Haussmann, L. John, and I. Kallfass, “Simultaneous Time and Frequency Domain Characterization of a Superheterodyne Terahertz Communication Frontend,” 2024 54th European Microwave Conference Eumc 2024, pp. 836–839, 2024.
    14. 73. I. Kallfass et al., “Cubesat Payload for the Exploratory In-Orbit Verification of a 71-76 GHz Satellite Communication Link,” 2024 IEEE International Conference on Microwaves Communications Antennas Biomedical Engineering and Electronic Systems Comcas 2024, 2024.
    15. 74. M. Eggert et al., “Qualification of the Attitude Control System of the E-band CubeSat EIVE,” Research Square, 2024.
    16. 75. T. Ufschlag et al., “Integrated GaN Power Detector for High Power Millimeter-Wave Applications,” in 2024 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), IEEE, Jan. 2024. doi: 10.1109/pawr59907.2024.10438607.
    17. 76. T. Zwick, I. Rolfes, F. Gerfers, C. Waldschmidt, and I. Kallfass, “The 26th European Microwave Week, in Berlin, Germany Around the Globe,” IEEE Microwave Magazine, Apr. 2024, doi: 10.1109/MMM.2024.3351973.
    18. 77. T. Kürner et al., “THz Communications and the Demonstration in the ThoR–Backhaul Link,” IEEE Transactions on Terahertz Science and Technology, Sep. 2024, doi: 10.1109/TTHZ.2024.3415480.
    19. 78. J. Nuzzo, D. Koch, M. Bosch, T. Fink, and I. Kallfass, “Time-Domain Simulation Based Multi-Domain Optimization of Gallium Nitride-Based DC/DC Converters utilizing Spice Models,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Duesseldorf, 2024.
    20. 79. L. Manoliu et al., “Calibration and Measurements of a Highly Directive Antenna for E-band Satellite Communication,” in Proc. German Microwave Conference (GeMIC), Duisburg, pp. 1–4, 2024.
    21. 80. T. Ufschlag et al., “Demonstration of a Drain-Bar-Based Supply Concept for H-Band High Power Amplifiers,” in Proc. German Microwave Conference (GeMIC), Duisburg, pp. 1–4, 2024.
    22. 81. I. Kallfass, “Combined Time and Frequency Domain Wideband Characterisation of Submillimetre-Wave Active Transceivers,” in Asia-Pacific Microwave Conference (APMC2024), Bali, Indonesia, 2024.
    23. 82. L. Gebert et al., “A High-Pass Distributed Amplifier Operating from 215 GHz up to 315 GHz in a 35 nm InGaAs mHEMT Technology,” in Proceedings European Microwave Integrated Circuits Conference (EuMIC), Paris, pp. 1–4, 2024.
    24. 83. D. Wrana, M. Guenter, S. Haussmann, and I. Kallfass, “Compact E-Band SIW Filters Targeting PCB-Based MMIC Hetero-Integration,” in Proc. German Microwave Conference (GeMIC), Duisburg, pp. 1–4, 2024.
    25. 84. R. Schnitzler, D. Koch, and I. Kallfass, “Sub 5 Second Wide-Bandgap Power Device Calorimetric Measurements Utilizing Optical Sensors and Peltier Elements,” in Proc. PCIM Europe Conference, 2024.
    26. 85. M. C. J. Weiser, V. Köhnlein, and I. Kallfass, “A Flexible Setup for Dynamic ON-State Resistance Measurements of GaN HEMTs With One-Factor-At-a-Time Capability,” IEEE Transactions on Power Electronics, pp. 1–10, 2024, doi: 10.1109/TPEL.2024.3376313.
    27. 86. O. Solomakha, V. Afanasenko, and I. Kallfass, “Multidimensional Characterization of Temperature Sensitive Electrical Parameters in SiC MOSFETs using Automation of Measurement Data Analysis,” in Proc. IEEE Design Methodologies Conference (DMC), Grenoble, 2024.
    28. 87. T. Fink, D. Koch, and I. Kallfass, “A SPICE based Multi-Domain Optimization of a Quasi-Resonant Passive Snubber Circuit for GaN-based DC/DC Converter Applications,” in Proc. IEEE Energy Conversion Congress and Expo (ECCE-Europe), 2024.
    29. 88. L. Gebert et al., “A High-Pass Distributed Amplifier Operating from 215GHz – 315GHz in a 35nm InGaAs mHEMT Technology,” in 2024 19th European Microwave Integrated Circuits Conference (EuMIC), Sep. 2024, pp. 54–57. doi: 10.23919/EuMIC61603.2024.10732452.
    30. 89. O. Solomakha, M. Siddhartha, M. Ruess, S. S. Roge, and K. I., “Flexible Control System For Modular One-Phase Interleaved GaN-based Totem Pole PFC Using Real-Time Hardware,” in Proc. PCIM Europe Conference, 2024.
    31. 90. J. Woermann, L. Manoliu, S. Haussmann, M. Krstic, and I. Kallfass, “Real-time Wideband Video Synchronization via an Analog QPSK Costas Loop in a Laboratory Demonstration of an E-Band Satellite Downlink,” in Proc. IEEE Radio and Wireless Symposium, San Antonio, TX, Jan. 2024, doi: 10.1109/SHaRC51853.2021.9375827.
    32. 91. T. Ufschlag et al., “Integrated GaN Power Detector for High Power Millimeter-Wave Applications,” in Proc. IEEE Radio and Wireless Symposium, San Antonio, TX, Jan. 2024, doi: 10.1109/SHaRC51853.2021.9375827.
    33. 92. O. Solomakha, V. Afanasenko, and I. Kallfass, “Multilevel Digital Twin of Power Electronics based on Degradable Wide-Bandgap Semiconductors for State-of-Health Estimation,” in Proc. IEEE Southern Power Electronics Conference (SPEC), 2024.
    34. 93. B. Schoch, D. Wrana, L. John, and I. Kallfass, “Simultaneous Time and Frequency Domain Characterisation of a Superheterodyne Terahertz Communication Frontend,” in Proceedings European Microwave Conference (EuMC), Paris, pp. 1–4, 2024.
    35. 94. T. Ufschlag et al., “High Sensitivity 270-320 GHz InGaAs-Based Power Detector with Temperarure Compensation,” in Proc. European Microwave Integrated Circuits Conference (EuMIC), Paris, pp. 1–4, 2024.
    36. 95. D. Koch, T. Fink, J. Nuzzo, M. Ruess, and I. Kallfass, “Single Gate-Drive GaN Power Electronics Building Block for Scalable and Fast-Switching High-Current Systems,” in Proc. IEEE Energy Conversion Congress and Exposition, (ECCE) Phoenix, Oct. 2024.
    37. 96. R. Schnitzler, E. DosSantosGomes, D. Koch, P. Rasic, and I. Kallfass, “Multidimensional Switching Loss Analysis of Different 1200 V SiC-Power MOSFET Technologies,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Duesseldorf, 2024.
    38. 97. D. Fang et al., “Wireless THz Communications at 250 Gbit/s Using Self-Injection-Locked Kerr Soliton Microcombs as Photonic-Electronic Oscillators at the Transmitter and Receiver,” in 50th European Conference on Optical Communication (ECOC), Sep. 2024.
    39. 98. S. S. Roge, C. M. Hermann, O. Solomakha, and I. Kallfass, “Mission Profile-based Online Remaining Useful Life Estimation of Power MOSFETs for Electric Vehicles using CARLA,” in Proc. IEEE Design Methodologies Conference (DMC), Grenoble, 2024.
    40. 99. T. Ufschlag et al., “High-Sensitivity 270-320 GHz InGaAs-Based Power Detector with Temperature-Compensation Mechanism,” 2024 19th European Microwave Integrated Circuits Conference Eumic 2024, pp. 255–258, 2024.
    41. 100. K. Munoz-Baron and I. Kallfass, “Machine Learning-Based Sensor Fusion for Junction Temperature Estimation,” in Proc. International Power Electronics and Motion Control Conference, ECCE Asia, Chengdu, 2024.
    42. 101. T. Fink, D. Koch, and I. Kallfass, “Adaptive Dead Time Control Based on a Time-Discrete Extremum Seeking System for GaN HEMTs,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Duesseldorf, 2024.
    43. 102. R. Kragl, K. Oberdieck, K. Spanos, S. Bweushausen, and I. Kallfass, “Analysis of Electromagnetic Emissions of Power Semiconductors: Interaction of Switching Behavior and Noise Emission,” in Proc. IEEE Southern Power Electronics Conference (SPEC), 2024.
    44. 103. M. Moser et al., “VTH-Engineering using Nanostructure Recessing in AlGaN/GaN MISHEMT Devices,” GaN Marathon, 2024.
    45. 104. T. Fink, D. Koch, and I. Kallfass, “Modulation Scheme for Dynamic AC Power Cycling Based on the Opposition Method,” in Proc. IEEE Energy Conversion Congress and Exposition (ECCE), Phoenix, Oct. 2024.
    46. 105. M. Haitz, M. Richter, and I. Kallfass, “Robustness Across Initial Estimates of Optimization Algorithms for Power Semiconductor Model Parameter Extraction,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2024.
    47. 106. M. Ruess, P. Mack, D. Koch, A. Reck, and I. Kallfass, “GaN Half-Bridges on Electrical and Thermal Co-Designed PCB-on-Ceramic Substrates,” GaN Marathon, 2024.
    48. 107. V. Afanasenko and I. Kallfass, “Online Degradation Detection and Estimation of SiC Power MOSFET based on TSEP,” in Proc. International Power Electronics and Motion Control Conference, ECCE Asia, Chengdu, 2024.
    49. 108. M. Weiser and I. Kallfass, “A Parameter Extraction Strategy for the Determination of Parasitics in Four-Terminal Power Devices,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Duesseldorf, 2024.
    50. 109. K. Munoz-Baron, S. S. Dash, D. Koch, and I. Kallfass, “Online Junction Temperature Sensing Using the Voltage Drop Over the Parasitic Source Inductance,” in Proc. PCIM Europe Conference, 2024.
    51. 110. K. Munoz-Baron, S. S. Dash, and I. Kallfass, “A Fast Source to Drain Voltage Measurement in Bridge Topologies Using a Freewheeling Path for Dynamic Power Cycling Tests,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Duesseldorf, 2024.
    52. 111. D. Lindenschmitt, C. Fischer, S. Haussmann, M. Kalter, I. Kallfass, and H. Schotten, “Concepts for Agricultural On-Demand Networks for 6G Based on THz Communication,” in proc. European Wireless, Sep. 2024.
    53. 112. R. Schnitzler, D. Koch, M. Weiser, J. Weimer, and I. Kallfass, “Comparison of Gate-Source-Dependent Soft- and Hard-Switching Losses of Wide-Bandgap Semiconductor Utilizing Electrical and Rapid Heatsinkless Calorimetric Measurements,” in Proc. Applied Power Electronics Conference (APEC), Long Beach, Feb. 2024.
    54. 113. M. Ruess, D. Koch, and I. Kallfass, “Achieving Low Inductance Power Loops on Rigid-Flex Substrates for Efficient MHz Switching in GaN Half-Bridges,” in Proc. IEEE Energy Conversion Congress and Exposition, (ECCE) Phoenix, Oct. 2024.
    55. 114. D. Koch, T. Fink, J. Nuzzo, K. Munoz-Baron, and I. Kallfass, “PCB-Integrated Pickup-Coil for Overcurrent Detection in High-Current, Paralleled GaN HEMTs,” in Proc. Applied Power Electronics Conference (APEC), Long Beach, Feb. 2024.
    56. 115. M. Moser et al., “Low-Power AlGaN/GaN Pressure Sensors for Harsh Environmental Conditions with High Sensitivity,” Power Electronic Devices and Components (PEDC), Elsevier, 2024.
    57. 116. I. Kallfass, B. Schoch, D. Wrana, J. Dunsmore, and J. P. Teyssier, “Combined Time and Frequency Domain Wideband Characterization of THz Transceiver Components,” in Workshop Proceedings European Microwave Week (EuMM), Paris, pp. 1–4, 2024.
    58. 117. J. Woermann, Singhal. P., and I. Kallfass, “An Ultra-Wideband Two-Port Cascode Self-Mixing Mixer in 130 nm SiGe for Use in Incoherent Radar,” in Proceedings European Microwave Integrated Circuits Conference (EuMIC), Paris, pp. 1–4, 2024.
    59. 118. M. Bosch, D. Koch, J. Nuzzo, and I. Kallfass, “Technique for Measuring the Capacitance-Voltage Characteristics of GaN and SiC Bidirectional Power Switches,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Duesseldorf, 2024.
    60. 119. J. Wörmann, P. Singhal, B. Özat, and I. Kallfass, “An Ultra-Wideband Two-Port Cascode Self-Mixing Mixer in 130 nm SiGe for Use in Incoherent Radar,” in 2024 19th European Microwave Integrated Circuits Conference (EuMIC), 2024, pp. 451–454. doi: 10.23919/EuMIC61603.2024.10732238.

  4. 2023

    1. 120. J. Weimer, N. Weimer, J. Nuzzo, and I. Kallfass, “Latent Heat Storage for Fast-Charging, High Power Density Battery Chargers,” IEEE Trans. on Emerging and Selected Topics in Power Electronics, 2023.
    2. 121. W. Johannes, S. Stanko, and I. Kallfass, “Efficient Joint Broadband Radar and Single Carrier Communication System in Frequency Division Multiplexing for High-Range Applications,” in 2023 24th International Radar Symposium (IRS), May 2023, pp. 1–10. doi: 10.23919/IRS57608.2023.10172460.
    3. 122. D. Koch, J. Nuzzo, M. Weiser, and I. Kallfass, “Digital Twin for Gate-Resistor Optimisztion of Parallel, 100 V, 7 m$Ømega$, GaN HEMTs based on Comprehensive Multi-Domain Simulations and Physically-Motivated Transistor Models,” in Proc. IEEE Design Methodologies Conference (DMC), Miami, Sep. 2023.
    4. 123. W. Johannes, S. Stanko, and I. Kallfass, “Time Domain Analysis of Joint Broadband Radar and Single Carrier Communication in Frequency Division Multiplexing,” in 2023 20th European Radar Conference (EuRAD), Sep. 2023, pp. 278–281. doi: 10.23919/EuRAD58043.2023.10289247.
    5. 124. M. Ruess, D. Koch, and I. Kallfass, “Multi-MHz Auto-Resonant Power Oscillator in a 650 V GaN-on-SOI Technology for Compact Wireless Power Transfer Systems,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2023.
    6. 125. S. Haussmann et al., “Measurement and Analysis of FDM for E-Band Satellite Communication,” in 2023 53rd European Microwave Conference (EuMC), Sep. 2023, pp. 356–359. doi: 10.23919/EuMC58039.2023.10290622.
    7. 126. B. Schoch, D. Wrana, L. Manoliu, M. Kuri, A. Tessmann, and I. Kallfass, “E-Band Active Upconverter Module with Tunable LO Feedthrough,” in Proc. IEEE Radio and Wireless Symposium, 2023.
    8. 127. I. Kallfass et al., “Instrumentation for the Time and Frequency Domain Characterization of Terahertz Communication Transceivers and their Building Blocks,” in 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023, Jun. 2023, pp. 1030–1033. doi: 10.1109/IMS37964.2023.10188006.
    9. 128. B. Schoch et al., “E-Band Active Upconverter Module with Tunable LO Feedthrough,” in 2023 IEEE Radio and Wireless Symposium (RWS), IEEE, Jan. 2023. doi: 10.1109/rws55624.2023.10046296.
    10. 129. I. Kallfass and B. Schoch, “Welcome from the General TPC Chair,” 20th European Radar Conference Eurad 2023, p. 10, 2023.
    11. 130. B. Schoch, D. Wrana, A. Tessmann, and I. Kallfass, “Wideband Cross-Domain Characterization of a W-band Amplifier MMIC,” in 2023 53rd European Microwave Conference (EuMC), Sep. 2023, pp. 770–773. doi: 10.23919/EuMC58039.2023.10290485.
    12. 131. L. Manoliu et al., “The technology platform of the EIVE CubeSat mission for high throughput downlinks at W-band,” Acta Astronautica, Apr. 2023, doi: 10.1016/j.actaastro.2023.02.039.
    13. 132. D. Wrana, S. Haussmann, B. Schoch, L. John, A. Tessmann, and I. Kallfass, “Effects of Harmonics from Frequency-Multiplicative Carrier Generation in a Superheterodyne 300 GHz Transmit Frontend,” 2023 53rd European Microwave Conference Eumc 2023, pp. 138–141, 2023.
    14. 133. K. Munoz-Baron and I. Kallfass, “Comprehensive Analysis of a Transistor-Based On-State Voltage Measurement Circuit for Online Condition Monitoring of Power Modules,” in Proc. Applied Power Electronics Conferrence (APEC), Orlando, Mar. 2023.
    15. 134. M. T. Koller et al., “Lessons Learned and First Results of the E-Band CubeSat EIVE,” Research Square, 2023.
    16. 135. L. Yan, K. Sharma, and I. Kallfass, “A Compact Model Extending the BSIM3 Model for Silicon Carbide Power MOSFETs,” IEEE Transactions on Power Electronics, Apr. 2023, doi: 10.1109/TPEL.2022.3232376.
    17. 136. D. Dell, J. Hückelheim, L. Manoliu, and I. Kallfass, “High Frequency Induction Heating of Non-magnetic Metals with 24 VDC for a Terrestrial Antenna,” in 2023 IEEE Wireless Power Technology Conference and Expo (WPTCE), Jun. 2023, pp. 1–6. doi: 10.1109/WPTCE56855.2023.10215855.
    18. 137. A. Chu et al., “LETSCOPE: Lifecycle Extensions Through Software-Defined Predictive Control of Power Electronics,” in IEEE EUROCON 2023 - 20th International Conference on Smart Technologies, Jul. 2023, pp. 665–670. doi: 10.1109/EUROCON56442.2023.10199076.
    19. 138. O. Solomakha, V. Afanasenko, and I. Kallfass, “Online Junction Temperature Estimation of Power Semiconductor Devices using Neural Network and Model-Based Design,” in IEEE EUROCON 2023 - 20th International Conference on Smart Technologies, Jul. 2023, pp. 187–192. doi: 10.1109/EUROCON56442.2023.10198878.
    20. 139. D. Koch and I. Kallfass, “A High Power Density Intelligent GaN DC/DC Power Module with Integrated Sensors for 48/24 V to 12 V, 100 A Applications,” in Proc. Applied Power Electronics Conference (APEC), Orlando, Mar. 2023.
    21. 140. I. Kallfass et al., “A W-Band Transmitter Scientific Cubesat Payload,” in Proc. ESA Space Microwave Week, 2023.
    22. 141. A. Renau et al., “300 GHz super heterodyne link over 645 m with frequency duplexing for point to point backhauls,” in 2023 53rd European Microwave Conference (EuMC), Sep. 2023, pp. 130–133. doi: 10.23919/EuMC58039.2023.10290501.
    23. 142. M. C. J. Weiser, K. M. Barón, T. Fink, and I. Kallfass, “A Fast ON-State Drain-to-Source Voltage Amplifier for the Dynamic Characterization of GaN Power Transistors,” in 2023 IEEE Applied Power Electronics Conference and Exposition (APEC), Mar. 2023, pp. 637–644. doi: 10.1109/APEC43580.2023.10131492.
    24. 143. V. Afanasenko, K. Munoz-Baron, and I. Kallfass, “Hybrid Model of Power MOSFET for Soft Failures Estimation Based on Time Domain Reflectometry and Machine Learning,” in Proc. 11th International Conference on Power Electronics (ICPE 2023-ECCE Asia), Korea, May 2023.
    25. 144. K. Munoz-Baron and I. Kallfass, “Virtual Junction Temperature Estimation during Dynamic Power Cycling Tests,” in Proc. 11th International Conference on Power Electronics (ICPE 2023-ECCE Asia), Korea, May 2023.
    26. 145. J. Nuzzo, D. Koch, M. Weiser, R. Schnitzler, and I. Kallfass, “Optimized Design of Fast-Switching GaN-based Inverters Utilizing a Digital Prototype in a Standardized Realistic Test Cycle,” in Proc. IEEE Design Methodologies Conference (DMC), Miami, Sep. 2023.
    27. 146. J. Weimer, R. Schnitzler, D. Koch, and I. Kallfass, “Thermal Impedance Calibration for Rapid and Noninvasive Calorimetric Soft-Switching Loss Characterization,” IEEE Transactions on Power Electronics, Jul. 2023, doi: 10.1109/TPEL.2023.3267982.
    28. 147. M. Weiser and I. Kallfass, “A Fast On-State Drain-to-Source Voltage Amplifier for the Dynamic Characterization of Fast-Switching Power Transistors,” in Proc. Applied Power Electronics Conference (APEC), Orlando, Mar. 2023.
    29. 148. D. Wrana, S. Haussmann, B. Schoch, L. John, A. Tessmann, and I. Kallfass, “Effects of Spurious Tones from Frequency-Multiplicative Carrier Generation in a Superheterodyne 300 GHz Transmit Frontend,” in Proc. IEEE Radio and Wireless Symposium, 2023.
    30. 149. D. Koch et al., “Highly-Integrated, Low-Noise, Dual-Output GaN DC/DC for GaN Solid-State Power Amplifier in Space Applications,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2023.
    31. 150. L. Manoliu, D. Wrana, B. Schoch, S. Haussmann, A. Tessmann, and I. Kallfass, “Frequency and Phase Investigation of the Local Oscillator Offset in a W-Band Satellite Communication Link,” in 2023 53rd European Microwave Conference (EuMC), Sep. 2023, pp. 360–363. doi: 10.23919/EuMC58039.2023.10290372.
    32. 151. D. Koch, V. Polezhaev, A. Sharma, K. Munoz-Baron, T. Huesgen, and I. Kallfass, “Application-Oriented Characterozation of Thermally-Optimized Asymmetricl Single Chip Packages for 100 V GaN HEMTs,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023.
    33. 152. K. Sharma and I. Kallfass, “Verfahren zum Bestimmen einer Temperatur einer Sperrschicht eines Halbleiterschalters, Vorrichtung. METHOD FOR DETERMINING A TEMPERATURE OF A DEPLETION LAYER OF A SEMICONDUCTOR SWITCH, AND DEVICE.,” DE102021206312A1; WO2022268456A1, 2023
    34. 153. A. Gatzastras, C. Volmer, and I. Kallfass, “A Fully-Differential Travelling-Wave Amplifier up to 110 GHz in a 22 nm FD-SOI CMOS Technology,” in 2023 18th European Microwave Integrated Circuits Conference (EuMIC), Sep. 2023, pp. 365–368. doi: 10.23919/EuMIC58042.2023.10288901.
    35. 154. A. Garcia-Luque, M. Moser, F. J. Mata-Contreras, T. M. Martin-Guerrero, I. Kallfass, and J. N. Burghartz, “On the Design, Development and Modeling of a New Generation of HEMTs for Industrial Purposes,” in Proc. URSI-Spain National Congress, 2023.
    36. 155. O. Solomakha, K. Munoz-Baron, and K. I., “Digital Twin Approach for Accurate Multi-Level Simulation of Wide-Bandgap Power-Semiconductors using Temperature Dependent Parameters,” in Proc. PCIM Europe Conference, 2023.
    37. 156. M. Moser et al., “PECVD SiNx passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management,” Power Electronic Devices and Components, vol. 4, p. 100032, 2023.
    38. 157. D. Koch et al., “Highly-Integrated, Low-Noise, Dual-Output GaN DC/DC for GaN Solid State Power Amplifier Supplies in Space Applications,” 2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications Wipda 2023, 2023.
    39. 158. J. Weimer, D. Koch, R. Schnitzler, and I. Kallfass, “Thermal Impedance Calibration for Rapid and Non-Invasiv Calorimetric Soft-Switching Loss Characterization,” IEEE Trans. on Power Electronics, 2023.
    40. 159. T. Ufschlag, B. Schoch, and I. Kallfass, “Inherent Gain Interference of a Two-Tone-Test,” in Proc. IEEE Radio and Wireless Symposium, 2023.
    41. 160. J. Weimer, N. Weimer, J. Nuzzo, and I. Kallfass, “High power density battery chargers with fast-charging utilizing heat storage,” Applied Thermal Engineering, Sep. 2023, doi: 10.1016/j.applthermaleng.2023.121043.
    42. 161. Y. Chen et al., “Self-Injection-Locked Kerr Soliton Microcombs With Photonic Wire Bonds For Use in Terahertz Communications,” in 2023 Conference on Lasers and Electro-Optics (CLEO), May 2023, pp. 1–2.
    43. 162. I. Kallfass et al., “Cubesat Payload for the Exploratory In-Orbit Verification of a 71-76 GHz Satellite Communication Link,” in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, pp. 1–4, 2023.
    44. 163. L. Manoliu et al., “The technology platform of the EIVE CubeSat mission for high throughput downlinks at W-band,” Acta Astronautica, vol. 205, pp. 80–93, 2023.
    45. 164. R. Schnitzler, D. Koch, E. S. Gomes, and I. Kallfass, “Fully Modular, Dynamic SiC and GaN Testbench with Automated Temperature and Gate-Voltage Characterization,” in Proc. IEEE Design Methodologies Conference (DMC), Miami, Sep. 2023.
    46. 165. A. Leitenstorfer et al., “The 2023 terahertz science and technology roadmap,” Journal of Physics D Applied Physics, vol. 56, Art. no. 22, Apr. 2023, doi: 10.1088/1361-6463/acbe4c.
    47. 166. K. M. Barón, M. C. J. Weiser, K. Sharma, and I. Kallfass, “Analysis of a Transistor-Based On-State Voltage Measurement Circuit for Condition Monitoring of Power Transistors,” in 2023 IEEE Applied Power Electronics Conference and Exposition (APEC), Mar. 2023, pp. 2556–2562. doi: 10.1109/APEC43580.2023.10131156.

  5. 2022

    1. 167. K. Sharma, S. Kamm, K. M. Barón, and I. Kallfass, “Characterization of Online Junction Temperature of the SiC power MOSFET by Combination of Four TSEPs using Neural Network,” in 2022 24th European Conference on Power Electronics and Applications (EPE′22 ECCE Europe), Sep. 2022, pp. 1–8.
    2. 168. L. Manoliu et al., “Measurements of Atmospheric Attenuation in an Outdoor Wireless E/W-Band Communication Link,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1–4, 2022.
    3. 169. S. Haussmann, D. Wrana, B. Schoch, A. Tessmann, R. Henneberger, and I. Kallfass, “Polarisation Multiplex in 300 GHz WirelessCommunication Link using Orthomode Transducer,” in Proc. 52nd European Microwave Conference (EuMC), Milano, 2022.
    4. 170. M. Moser et al., “Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates,” in Proc. 17th European Microwave Integrated Circuits Conference (EuMIC), Milano, 2022.
    5. 171. A. Garcia-Luque et al., “Frequency-Characterization and Modeling of AlGaN/GaN HEMTs for High-Power Applications,” 2022 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2022 - Proceedings, 2022.
    6. 172. D. Wrana, L. John, B. Schoch, S. Wagner, and I. Kallfass, “Sensitivity Analysis of a 280–312 GHz Superheterodyne Terahertz Link Targeting IEEE802.15.3d Applications,” IEEE Transactions on Terahertz Science and Technology, vol. 12, Art. no. 4, 2022, doi: 10.1109/TTHZ.2022.3172008.
    7. 173. L. Manoliu et al., “Ultra-High Throughput E/W-Band Downlink CubeSat Mission,” Proceedings of the International Astronautical Congress Iac, vol. 2022-September, 2022.
    8. 174. L. John, D. Wrana, B. Schoch, A. Leuther, P. Szriftgiser, and G. Ducournau, “Non-linear impairments of 300 GHz MPAs for THz communications,” International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, vol. 2022-August, 2022.
    9. 175. D. Wrana, Y. Leiba, L. John, B. Schoch, A. Tessmann, and I. Kallfass, “Short-Range Full-Duplex Real-Time Wireless Terahertz Link for IEEE802.15.3d Applications,” in 2022 IEEE Radio and Wireless Symposium (RWS), 2022, pp. 94–97. doi: 10.1109/RWS53089.2022.9719954.
    10. 176. M. Moser et al., “Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates,” 2022 17th European Microwave Integrated Circuits Conference, EuMIC 2022, pp. 80–83, 2022.
    11. 177. H. Gibson, R. Henneberger, A. Tessmann, I. Kallfass, L. Manoliu, and B. Schoch, “A satellite tracking system at 78GHz using the over-moded TE21 ground-station antenna pattern,” 32nd International Symposium of Space Terahertz Technology Isstt 2022, 2022.
    12. 178. D. Wrana, B. Schoch, L. Manoliu, S. Haubmann, A. Tessmann, and I. Kallfass, “Investigation of the Influence of LO Leakage in an E-Band Quadrature Transmitter,” 2022 German Microwave Conference, GeMiC 2022, pp. 33–36, 2022.
    13. 179. B. Schoch et al., “E-Band Transmitter with 3 W Complex Modulated Signal Output Power Performance,” in 2021 51st European Microwave Conference (EuMC), 2022, pp. 458–461. doi: 10.23919/EuMC50147.2022.9784314.
    14. 180. D. Koch, D. Wrana, B. Schoch, and I. Kallfass, “Low-Noise, 24 V, 1 A, 2.1 MHz GaN DC/DC Converter for Variable Power Supply of a GaN-Based Solid-State Power Amplifier,” in 2022 IEEE Applied Power Electronics Conference and Exposition (APEC), 2022, pp. 1208–1213. doi: 10.1109/APEC43599.2022.9773463.
    15. 181. L. Manoliu et al., “Measurements of Atmospheric Attenuation in an Outdoor Wireless E/W-Band Communication Link,” in 2022 14th German Microwave Conference (GeMiC), 2022, pp. 208–211.
    16. 182. B. Schoch et al., “Performance Optimization of an E-Band Communication Link using Open-Loop Predistortion,” 2022 German Microwave Conference, GeMiC 2022, pp. 216–219, 2022.
    17. 183. J. Weimer, D. Koch, M. Nitzsche, J. Haarer, J. Roth-Stielow, and I. Kallfass, “Miniaturization and Thermal Design of a 170 W AC/DC Battery Charger Utilizing GaN Power Devices,” IEEE Open Journal of Power Electronics, 2022, doi: 10.1109/OJPEL.2021.3137093.
    18. 184. S. Chartier, A. Tessmann, A. Leuther, I. Kallfass, R. Ewald, and P. Piironen, “Remote Sensing and High Data Rate Satellite Communication Based on Metamorphic HEMT Technology,” in Proc. European Microwave Int. Circuits Conf. EuMIC, Milano, 2022.
    19. 185. A. Gatzastras, C. Volmer, and I. Kallfass, “A Differential Travelling-Wave Amplifier in a 22nm FD-SOI CMOS Technology,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1–4, 2022.
    20. 186. K. Sharma, J. Hueckelheim, K. Munoz-Baron, and I. Kallfass, “Comparison of Different Methods for the Characterization of Online Junction Temperature of a Gallium-Nitride Power Transistor,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Berlin, Mar. 2022.
    21. 187. H. Amrouch et al., “Intelligent Methods for Test and Reliability,” in Proc. Design, Automation and Test in Europe Conference (DATE), Mar. 2022.
    22. 188. J. Woermann, S. Ebeling, B. Schoch, A. Tessmann, and I. Kallfass, “Demonstration of a Novel, Incoherent, Self-mixing Radar Principle Applied to a Wideband E-band Frontend,” in Proc. IEEE Int. Microwave Symposium, 2022.
    23. 189. I. Kallfass et al., “RF-Characterisation of AlGaN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates,” GaN Marathon, Venice, 2022.
    24. 190. D. Wrana, Y. Leiba, L. John, B. Schoch, A. Tessmann, and I. Kallfass, “Short-Range Full-Duplex Real-Time Wireless Link for IEEE802.15.3d Applications,” in Proc. IEEE Radio and Wireless Symposium, San Diego, CA, 2022, doi: 10.1109/SHaRC51853.2021.9375827.
    25. 191. S. Kamm, S. Bickelhaupt, K. Sharma, N. Jazdi, I. Kallfass, and M. Weyrich, “Simulation-to-Reality based Transfer Learning for the Failure Analysis of SiC Power Transistors,” in Proc. 27th Int. Conf. on Emerging Technologies and Factory Automation (EFTA), Stuttgart, Sep. 2022.
    26. 192. J. Weimer, D. Koch, M. Nietzsche, J. Haarer, J. Roth-Stielow, and I. Kallfass, “Miniaturization and Thermal Design of a 170 W AC/DC Battery Charger Utilizing GaN Power Devices,” IEEE Open Journal of Power Electronics, vol. 3, pp. 13–25, Dec. 2022, doi: 10.1109/OJPEL.2021.3137093.
    27. 193. M. T. Koller et al., “Next on the Pad: The E-band Technology Demonstration CubeSat EIVE,” Proceedings of the International Astronautical Congress Iac, vol. 2022-September, 2022.
    28. 194. D. Wrana, B. Schoch, L. Manoliu, S. Haußmann, A. Tessmann, and I. Kallfass, “Investigation of the Influence of LO Leakage in an E-Band Quadrature Transmitter,” in 2022 14th German Microwave Conference (GeMiC), 2022, pp. 33–36.
    29. 195. M. Pradhan, M. Moser, M. Alomari, J. N. Burghartz, and I. Kallfass, “Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure,” in Proc. 52nd European Solid-State Device Research Conference (ESSDERC), Milano, Sep. 2022.
    30. 196. K. Sharma, S. Kamm, K. Munoz-Baron, and I. Kallfass, “failure analysis of SiC power transistor via time domain reflectometry,” in Proc. CIRP Conference on Intelligent Computation in Manufacturing Engineering - CIRP ICME, Naples, Jul. 2022.
    31. 197. M. Riefer, J. Winkler, S. Strache, and I. Kallfass, “Single Chip Junction Temperature Measurement for Paralleled SiC MOSFETs,” in Proc. ECCE Conference, 2022.
    32. 198. M. Weiser, M. Ruess, and I. Kallfass, “Design Considerations of Fast On-State Voltage Measurement Circuits,” 23rd European Conference on Power Electronics and Applications (EPE), 2022.
    33. 199. J. Wormann, S. Ebeling, B. Schoch, and I. Kallfass, “Design of a Wideband E-band Radar Frontend for a Novel Incoherent Self-Mixing Radar Principle,” IEEE MTT-S International Microwave Symposium Digest, vol. 2022-June, pp. 538–541, 2022.
    34. 200. L. Manoliu et al., “Atmospheric Effects on Wideband-Modulated E-band Long-Range Communication Links,” in Proc. Kleinheubacher Tagung, pp. 1–4, 2022.
    35. 201. L. Manoliu et al., “Ultra-High Throughput E/W-Band Downlink CubeSat Mission,” in Proc. 73rd International Astronautical Congress, Paris, France, pp. 1–14, Sep. 2022.
    36. 202. G. Ducournau et al., “300 GHz links testing enabled by Photonics-based THz generation techniques,” French-German Terahertz Conference, La Grande Motte, May 2022.
    37. 203. B. Schoch, F. Wiewel, D. Wrana, L. Manoliu, S. Haussmann, and I. Kallfass, “Performance Optimization of an E-Band Communication Link using Open-Loop Predistortion,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1–4, 2022.
    38. 204. D. Wrana, B. Schoch, A. Tessmann, and I. Kallfass, “Investigation of the Influence of LO Leakage in a Double-Balanced Homodyne E-Band Quadrature Transmitter,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1–4, 2022.
    39. 205. M. Riefer, J. Winkler, S. Strache, and I. Kallfass, “Substrate Integrated Temperature Sensing for Bondless Power Modules,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Berlin, Mar. 2022.
    40. 206. J. Weimer, D. Koch, and I. Kallfass, “Compact Half-Bridge Module for a Charger Application Utilizing GaN Power Devices with Integrated Driver,” in. Proc. PCIM Europe, Nuremberg, Germany, May 2022.
    41. 207. W. Johannes, S. Stanko, and I. Kallfass, “Investigation of a RF Frontend at 35 GHz for Joint Broadband-Radar and Communication Applications,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1–4, 2022.
    42. 208. D. Wrana, L. John, B. Schoch, S. Wagner, and I. Kallfass, “Short Range Wireless Transmission Using a 295–315 GHz Superheterodyne Link Targeting IEEE802.15.3d Applications,” in 2021 51st European Microwave Conference (EuMC), 2022, pp. 205–208. doi: 10.23919/EuMC50147.2022.9784217.

  6. 2021

    1. 209. K. Sharma et al., “Online Junction Temperature Monitoring of Wide Bandgap power transistors using Quasi Turn-on Delay Time as Temperature Sensitive Electrical Parameter,” in. Proc. ECCE Asia, 2021.
    2. 210. K. Munoz-Baron, J. Hueckelheim, and I. Kallfass, “Accurate online junction temperature estimation using acquisition circuit temperature for on-state voltage measurement,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.
    3. 211. A. Sharma, J. Weimer, D. Koch, I. Kallfass, and T. Huesgen, “Asymmetric Packages for Optimal Performance of GaN-HEMT using PCB Fabrication Technology,” in Proc. PCIM Europe Conference, 2021.
    4. 212. D. Koch, M. Ruess, D. Maier, and I. Kallfass, “Optimization of Self-Oscillating Power Converter Based on GaN-HEMTs for Contactless Energy Transfer,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021.
    5. 213. S. Moench, R. Reiner, P. Waltereit, O. Ambacher, and I. Kallfass, “Capacitive Characteristics of GaN Half-Bridges for Various Si and SOI Substrate Terminations,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.
    6. 214. C. Groetsch, I. Dan, L. John, S. Wagner, and I. Kallfass, “A Compact 281-319 GHz Low-Power Downconverter MMIC for Superheterodyne Communication Receivers,” IEEE Trans. Terahertz Science and Technology, vol. 11, Art. no. 2, Mar. 2021, doi: 10.1109/TTHZ.2020.3038043.
    7. 215. M. C. J. Weiser, J. Hückelheim, and I. Kallfass, “A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTs,” IEEE Transactions on Electron Devices, vol. 68, Art. no. 9, Sep. 2021, doi: 10.1109/TED.2021.3098498.
    8. 216. M. Jandt, M. Eberspaecher, and I. Kallfass, “Radar imaging based on multiple incoherent antennas,” SPIE Symposium on Optics/Photonics in Security and Defence, Millimetre Wave and Terahertz Sensors and Technology, 2021.
    9. 217. R. Loeffler, J. Hueckelheim, D. Koch, and I. Kallfass, “Development of a powerful gate-driver-circuit for high-frequency control of a DC/DC-converter based on gallium nitride transistors,” in Proc. PCIM Europe Conference, 2021.
    10. 218. L. Yan and I. Kallfass, “A Compact Model Adopting the EKV Model for a Silicon Vertical Power MOSFET,” in Proc. Applied Power Electronics Conferrence (APEC), Phoenix, Mar. 2021.
    11. 219. L. Manoliu, R. Henneberger, A. Tessmann, J. Seidel, M. Eppard, and I. Kallfass, “Impairments of Atmospheric Attenuation on a Wideband E-Band Outdoor Communication Link,” in Proc. European Microwave Conf. EuMIC, London, pp. 1–4, 2021.
    12. 220. L. Manoliu, B. Schoch, M. Koller, J. Wieczorek, S. Klinkner, and I. Kallfass, “High-speed FPGA-Based Payload Computer for an In-Orbit Verification of a 71–76 GHz Satellite Downlink,” in 2021 IEEE Space Hardware and Radio Conference (SHaRC), IEEE, Jan. 2021. doi: 10.1109/sharc51853.2021.9375827.
    13. 221. B. Schoch, A. Tessmann, A. Leuther, P. Szriftgiser, G. Ducournau, and I. Kallfass, “Two-Tone Intermodulation Performance of a 300GHz Power Amplifier MMIC,” in 2021 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), Jan. 2021, pp. 16–19. doi: 10.1109/PAWR51852.2021.9375586.
    14. 222. D. Wrana, L. John, B. Schoch, S. Wagner, and I. Kallfass, “Short Range Wireless Transmission Using a 295-315 GHz Superheterodyne Link Targeting IEEE802.15.3d Applications,” 2021 51st European Microwave Conference, EuMC 2021, pp. 205–208, 2021.
    15. 223. H. Ghanem et al., “Non-linear analysis of a Broadband Power Amplifier at 300 GHz,” EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference, pp. 209–212, 2021.
    16. 224. L. Manoliu, B. Schoch, M. Koller, J. Wieczorek, S. Klinkner, and I. Kallfass, “High-speed FPGA-Based Payload Computer for an In-Orbit Verification of a 71–76 GHz Satellite Downlink,” in 2021 IEEE Space Hardware and Radio Conference (SHaRC), Jan. 2021, pp. 21–24. doi: 10.1109/SHaRC51853.2021.9375827.
    17. 225. C. M. Grotsch, I. Dan, L. John, S. Wagner, and I. Kallfass, “A Compact 281–319 GHz Low-Power Downconverter MMIC for Superheterodyne Communication Receivers,” IEEE Transactions on Terahertz Science and Technology, Mar. 2021, doi: 10.1109/TTHZ.2020.3038043.
    18. 226. S. Moench et al., “PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs with On-Package Gate and DC-Link Capacitors,” IEEE Transactions on Power Electronics, vol. 36, Art. no. 1, 2021.
    19. 227. K. M. Barón, K. Sharma, M. Nitzsche, and I. Kallfass, “Online Monitoring of Degradation Sensitive Electrical Parameters in Inverter Operation for SiC-MOSFETs,” in 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), Jun. 2021, pp. 1235–1241. doi: 10.1109/APEC42165.2021.9487142.
    20. 228. L. Manoliu, S. Kumari, and I. Kallfass, “Variable-Coded Modulation and Error-Free Transmission Algorithms for an Exploratory In-Orbit Verification of an E-Band (71-76 GHz) Satellite Link,” in 27th Ka and Broadband Communications Conference, Sorrento, 2021.
    21. 229. D. Koch, S. Araujo, J. Weimer, and I. Kallfass, “Design Methodology for Ultra-Compact Rogowski-Coils for Current Sensing in Low-Voltage High-Current GaN Based DC/DC-Converters,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.
    22. 230. L. Manoliu et al., “FPGA-Based Reconfigurable Onboard Digital Signal Processing for an Exploratory In-Orbit Verification of an E/W-Band (71-76 GHz) Satellite Link,” International Conference on Satellite and Space Communications (ICSSC), London, Jun. 2021.
    23. 231. M. T. Koller, L. M. Loidold, L. Manoliu, J. Meier, I. Kallfass, and S. Klinkner, “The EIVE CubeSat - Developing a Satellite Bus for a 71-76 GHz E-Band Transmitter Payload,” 35th Annual Small Satellite Conference, Logan, Utah, Aug. 2021.
    24. 232. D. Wrana, L. John, S. Wagner, and I. Kallfass, “Short Range Wireless Transmisson Using a 295-315-GHz Superheterodyne THz Link Targeting IEEE802.15.3d Applications,” in Proc. European Microwave Conf. EuMIC, London, pp. 1–4, 2021.
    25. 233. M. Basler et al., “GaN Active Diode for Low-Loss Rectification,” in. Proc. 33nd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.
    26. 234. J. Weimer, D. Koch, and I. Kallfass, “Determination of Hard- and Soft-Switching Losses for Wide Bandgap Power Transistors with Noninvasive and Fast Calorimetric Measurements,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.
    27. 235. K. Munoz-Baron and I. Kallfass, “Online Monitoring of Degradation Sensitive Electrical Parameters in Inverter Operation,” in Proc. Applied Power Electronics Conferrence (APEC), Phoenix, Mar. 2021.
    28. 236. I. Kallfass, “300 GHz Fixed Wireless Links,” Terahertz Technologies and Applications Summer School, TU Eindhoven, May 2021.
    29. 237. J. Woermann, A. Dyskin, S. Chartier, and I. Kallfass, “A Passively-Coupled 39 GHz Colpitts Quadrature VCO in SiGe HBT Technology,” in Proc. European Microwave Int. Circuits Conf. EuMIC, London, pp. 1–4, 2021.
    30. 238. A. Gatzastras, H. Massler, A. Leuther, S. Chartier, and I. Kallfass, “Implementation of Slow-Wave Thin-Film Microstrip Transmission Lines in a 35nm InGaAs Technology,” in Proc. European Microwave Int. Circuits Conf. EuMIC, London, pp. 1–4, 2021.
    31. 239. I. Kallfass, “A Cubesat Payload for the In-Orbit Verification of an E/W-Band Satellite Communication Link,” 14th UK, Europe, China Millimeter Waves and Terahertz Technology Workshop (UCMMT), Lancaster, UK, Sep. 2021.
    32. 240. I. Kallfass et al., “Towards the Exploratory In-Orbit Verification of an E/W-Band Satellite,” Int. Wireless Symposium (IWS), Nanjing, May 2021.
    33. 241. K. Sharma, K. Munoz-Baron, J. Ruthardt, and I. Kallfass, “Online Junction Temperature Monitoring of Wide Bandgap Power Transistors using Quasi Turn-on Delay as TSEP,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021.
    34. 242. J. Weimer, D. Koch, and I. Kallfass, “Accuracy Study of Calorimetric Switching Loss Energy Measurements for Wide Bandgap Power Transistors,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.
    35. 243. B. Schoch et al., “E-Band Transmitter with 3 W Complex Modulated Signal Output Power Performance,” 2021 51st European Microwave Conference, EuMC 2021, pp. 458–461, 2021.
    36. 244. E. R. Bammidi and I. Kallfass, “An Analog Costas Loop MMIC in 130 nm SiGe BiCMOS Technology for Receiver Synchronization of QPSK and BPSK Modulated Signals,” EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference, pp. 125–128, 2021.
    37. 245. J. Weimer and I. Kallfass, “Thermal Topology Optimization for High Power Density Power Electronic Systems in Passively Cooled Housings,” in Proc. IEEE Design Methodologies Conference (DMC), Bath, UK, Jul. 2021.
    38. 246. M. Riefer, J. Winkler, S. Strache, and I. Kallfass, “Implementation of current-source Gate Driver with open-loop slope shaping for SiC-MOSFETs,” in Proc. PCIM Europe Conference, 2021.
    39. 247. T. Huesgen, A. Sharma, J. Weimer, D. Koch, and I. Kallfass, “Thermisch und elektrisch optimiertes Leiterplatten-Prepackage für 100V 100A GaN Leistungshalbleiter,” in Proc. MikroSystemTechnik Kongress, Ludwigsburg, Nov. 2021.
    40. 248. D. Koch and I. Kallfass, “Gate Driver Concept for Parallel Operation of Low-Voltage High-Current GaN Power Transistors for Mild-Hybrid Applications,” in Proc. Applied Power Electronics Conference (APEC), Phoenix, Mar. 2021.
    41. 249. C. M. Groetsch, I. Dan, L. John, S. Wagner, and I. Kallfass, “Comparison of active dual-gate and passive mixers for terahertz applications,” IET Circuits, Devices and Systems, vol. 15, Art. no. 4, 2021, doi: https://doi.org/10.1049/cds2.12032.
    42. 250. K. Munoz-Baron, K. Sharma, M. Nietzsche, and I. Kallfass, “Characterization of Electrical Parameters for Health Monitoring in SiC MOSFETs during AC Power Cycling,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021.
    43. 251. K. Munoz-Baron and I. Kallfass, “Online Health Monitoring in Power Modules for Inverter Topologies using Isolated Parameter Acquisition,” in Proc. IEEE Design Methodologies Conference (DMC), Bath, UK, Jul. 2021.
    44. 252. D. Koch, A. Sharma, T. Huesgen, and I. Kallfass, “Comparison of thermally optimized SMD packages for 100 V GaN HEMTs in 300 kHz buck converter high current applications,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021.
    45. 253. K. Sharma, S. Kamm, K. Muñoz Barón, and I. Kallfass, “Non-Destructive Failure Analysis of Power Devices via Time-Domain Reflectometry,” in. Proc. CASE, Lille, France, May 2021.
    46. 254. M. Weiser and I. Kallfass, “Extension on ASM HEMT Model with Trapping Effects in GaN Power Devices,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.
    47. 255. G. Ducournau et al., “300 GHz transmission of E/V bands data-flows in the ThoR project,” Workshop European Conference on Antennas and Propagation (EuCAP), 2021.
    48. 256. D. Koch, A. Sharma, J. Weimer, M. Weiser, T. Huesgen, and I. Kallfass, “A 48 V, 300 kHz, High Current DC/DC-Converter Based on Paralleled, Asymmetrical and Thermally Optimized PCB Embedded GaN Packages with Integrated Temperature Sensor,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.
    49. 257. C. M. Grötsch, I. Dan, L. John, S. Wagner, and I. Kallfass, “Comparison of active dual-gate and passive mixers for terahertz applications,” IET Circuits, Devices and Systems, 2021.
    50. 258. S. Moench et al., “Monolithic Integrated AlGaN/GaN Power Converter Topologies on High-Voltage AlN/GaN Superlattice Buffer,” Physica Status Solidi (A) Applications and Materials Science, vol. 218, Art. no. 3, 2021.
    51. 259. I. Kallfass et al., “Towards the Exploratory In-Orbit Verification of an E/W-Band Satellite Communication Link,” in 2021 IEEE MTT-S International Wireless Symposium (IWS), May 2021, pp. 1–3. doi: 10.1109/IWS52775.2021.9499586.
    52. 260. J. Weimer, D. Koch, M. Nietzsche, J. Haarer, J. Roth-Stielow, and I. Kallfass, “Miniaturization and Thermal Design of a 170 W AC/DC Battery Charger Utilizing GaN Power Devices,” IEEE Open Journal of Power Electronics, vol. 3, pp. 13–25, Dec. 2021, doi: 10.1109/OJPEL.2021.3137093.
    53. 261. M. C. J. Weiser, J. Hückelheim, and I. Kallfass, “A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTs,” IEEE Transactions on Electron Devices, Sep. 2021, doi: 10.1109/TED.2021.3098498.
    54. 262. A. Gatzastras, H. Massler, A. Leuther, S. Chartier, and I. Kallfass, “A Three Stage Gain Cell Topology with an Active Ultra-Wideband Input Matching in H-Band,” EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference, pp. 245–248, 2021.
    55. 263. D. Dell, J. Weimer, and I. Kallfass, “Additive Manufacturing of 10 W Power Converter with High Power Density,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.
    56. 264. M. Basler et al., “High Power Density DC-DC Converters Using Highly Integrated Monolithic Half-Bridge GaN ICs,” in Proc. PCIM Europe Conference, 2021.
    57. 265. D. Koch, S. Araujo, J. Weimer, and I. Kallfass, “Automated Calorimetric Measurement with a Peltier Element for Switching Loss Characterization,” in Proc. PCIM Europe Conference, 2021.
    58. 266. I. Dan et al., “A Superheterodyne Transmit Receive Chipset for Beyond 5G Network Integration,” in Proc. European Microwave Int. Circuits Conf. EuMIC, London, 2021.

  7. 2020

    1. 267. K. Muñoz Barón, K. Sharma, M. Nietzsche, P. Ziegler, and I. Kallfass, “Threshold voltage instability under application-oriented power cycling conditions for SiC power devices,” in. Proc. PCIM Europe, Nuremberg, Germany, May 2020.
    2. 268. D. Koch, S. Moench, R. Reiner, J. Hueckelheim, K. Munoz-Baron, and I. Waltereit, P.and Kallfass, “Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power IC,” in. Proc. PCIM Europe, Nuremberg, Germany, May 2020.
    3. 269. S. Moench et al., “PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs with On-Package Gate and DC-Link Capacitors,” IEEE Transactions on Power Electronics Letters, 2020.
    4. 270. J. C. Scheytt, D. Wrana, M. Bahmanian, and I. Kallfass, “Ultra-Low Phase Noise Frequency Synthesis for THz Communication Using an Optoelectronic PLL,” in. Porc. 3rd International Workshop on Mobile Terahertz Systems (IWMTS), Essen, Germany, 2020.
    5. 271. E. R. Bammidi and I. Kallfass, “An Analog Costas Loop MMIC in 130 nm SiGe BiCMOS Technology for Receiver Synchronization of QPSK and BPSK Modulated Signals,” in Proc. European Microwave Int. Circuits Conf. EuMIC, Utrecht, pp. 1–4, 2020.
    6. 272. K. Muñoz Barón, K. Sharma, M. Nietzsche, P. Ziegler, D. Koch, and I. Kallfass, “Characterization of Threshold Voltage for Application-Oriented Power Cycling Conditions for Wide-Bandgap Power Devices,” in. Proc. PCIM Europe digital days, Nuremberg, Germany, pp. 1–7, Jul. 2020.
    7. 273. I. Kallfass, “Future of high-frequency electronics for wireless communications,” 1st BEST-NEST International Workshop, Center for Broad Explorations on Spectrum Technologies for Navigation, Environment, Surveillance, and Transportation (BEST NEST), Worcester Polytechnic Institute, MA, Dec. 2020.
    8. 274. P. Harati and I. Kallfass, “Analogue feed-forward carrier recovery for millimetre-wave broadband wireless links,” IET Microwaves, Antennas and Propagation, vol. 14, Art. no. 5, 2020.
    9. 275. I. Dan et al., “A 300 GHz Wireless Link Employing a Photonic Transmitter and Active Electronic Receiver with a Transmission Bandwidth of 54 GHz,” IEEE Transactions on Terahertz Science and Technology, vol. 10, Art. no. 3, Mar. 2020, doi: 10.1109/TTHZ.2020.2977331.
    10. 276. I. Dan, G. Ducournau, S. Hisatake, P. Szriftgiser, R. Braun, and I. Kallfass, “A Terahertz Wireless Communication Link Using a Superheterodyne Approach,” IEEE Transactions on Terahertz Science and Technology, vol. 10, Art. no. 1, Jan. 2020, doi: 10.1109/TTHZ.2019.2953647.
    11. 277. B. Schoch, A. Tessmann, S. Wagner, and I. Kallfass, “E-band Balanced Broadband Driver Amplifier MMIC with 1.8THz Gain-Bandwidth Product,” GeMIC 2020 - Proceedings of the 2020 German Microwave Conference, pp. 9–12, 2020.
    12. 278. J. Winkler, J. Homoth, and I. Kallfass, “Electroluminescence-Based Junction Temperature Measurement Approach for SiC Power MOSFETs,” IEEE Transactions on Power Electronics, Mar. 2020, doi: 10.1109/TPEL.2019.2929426.
    13. 279. I. Dan et al., “A 300-GHz Wireless Link Employing a Photonic Transmitter and an Active Electronic Receiver With a Transmission Bandwidth of 54 GHz,” IEEE Transactions on Terahertz Science and Technology, May 2020, doi: 10.1109/TTHZ.2020.2977331.
    14. 280. I. Dan, G. Ducournau, S. Hisatake, P. Szriftgiser, R.-P. Braun, and I. Kallfass, “A superheterodyne 300 GHz wireless link for ultra-fast terahertz communication systems,” International Journal of Microwave and Wireless Technologies, vol. 12, Art. no. 7, 2020.
    15. 281. K. Sharma, K. Muñoz Barón, J. Hückelheim, D. Koch, and I. Kallfass, “Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter,” in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, 2020.
    16. 282. B. Schoch, S. Chartier, U. Mohr, M. Koller, S. Klinkner, and I. Kallfass, “Towards a CubeSat Mission for a Wideband Data Transmission in E-Band,” in 2020 IEEE Space Hardware and Radio Conference (SHaRC), IEEE, Jan. 2020. doi: 10.1109/sharc47220.2020.9034007.
    17. 283. J. Acuña, V. Afanasenko, T. Rupp, M. Sonner, M. Klingler, and I. Kallfass, “Application of neural networks to accelerate thermomechanical simulations of power modules for lifetime prediction,” CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems, pp. 315–320, 2020.
    18. 284. M. Basler et al., “Large-Area Lateral AlGaN/GaN-on-Si Field-Effect Rectifier With Low Turn-On Voltage,” IEEE Electron Device Letters, Jul. 2020, doi: 10.1109/LED.2020.2994656.
    19. 285. M. Basler et al., “A GaN-based Current Sense Amplifier for GaN HEMTs with Integrated Current Shunts,” Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2020-September, pp. 274–277, 2020.
    20. 286. S. Moench et al., “A 600V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors,” Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2020-September, pp. 254–257, 2020.
    21. 287. K. Sharma et al., “A Robust Approach for Characterization of Junction Temperature of SiC power devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter,” in Proc. Applied Power Electronics Conf. (APEC), New Orleans, pp. 1532–1536, Mar. 2020.
    22. 288. D. Koch et al., “Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power IC,” in. Proc. PCIM Europe, Nuremberg, Germany, May 2020.
    23. 289. H. Ghanem et al., “Non-linear analysis of a Broadband Power Amplifier at 300 GHz,” in Proc. European Microwave Int. Circuits Conf. EuMIC, Utrecht, pp. 1–4, 2020.
    24. 290. S. Moench et al., “Monolithic Integrated AlGaN/GaN Power Converter Topologies on High-Voltage AlN/GaN Superlattice Buffer,” Physica Status Solidi A: Applications and Materials Science, pp. 1–13, Sep. 2020, doi: 10.1002/pssa.202000404.
    25. 291. J. Acuna, V. Afanasenkoa, T. Rupp, M. Sonner, and I. Kallfass, “Fast Thermomechanical Simulation of Power Module Die-Attach Layers using Neural Networks,” in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, 2020.
    26. 292. L. Yan and I. Kallfass, “Adopting the BSIM3 Model with Thermal Extension for a Si Vertical Power MOSFET,” in Proc. 19th IEEE International Power Electronics and Motion Control Conference (PEMC), Gliwice, Poland, 2020.
    27. 293. L. Manoliu, B. Schoch, and I. Kallfass, “FPGA Based Reconfigurable On-Board Payload Processing for an Exploratory In-Orbit Verification of an E-Band (71-76 GHz) Satellite Link (EIVE),” in Proc. 5th ESA SpacE FPGA Users Workshop, Noordwijk, Mar. 2020.
    28. 294. I. Dan et al., “300 GHz Wireless Link Employing a Photonic Transmitter and Active Electronic Receiver with a Transmission Bandwidth of 54 GHz,” IEEE Transactions on Terahertz Science and Technology, p. 1, 2020, doi: 10.1109/TTHZ.2020.2977331.
    29. 295. J. Weimer and I. Kallfass, “Efficiency Requirements for Passively Cooled Converters with Thermal Measurement Based 3D-FEM Simulation,” in Proc. Conference on Power Electronics and Applications EPE, Lyon, 2020.
    30. 296. L. Yan and I. Kallfass, “A General Model Translation Approach for Vertical Power MOSFETs Based on BSIM3 Model,” in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, 2020.
    31. 297. K. Sharma et al., “Characterisation of the Junction Temperature of Gallium Nitride Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter,” in 10th International Conference on Power Electronics, Machines and Drives, Nottingham, UK, 2020.
    32. 298. I. Kallfass, “THz Interconnect,” Photonic Wireless Communication Workshop Gothenborg Research Center, Huawei, Dec. 2020.
    33. 299. J. Weimer and I. Kallfass, “Thermal Study on Leadframe Dimensioning for High Power Dissipation and Low Inductance Commutation Cells,” in. Proc. PCIM Europe, Nuremberg, Germany, May 2020.
    34. 300. A. Gatzastras, H. Massler, A. Leuther, S. Chartier, and I. Kallfass, “A Three Stage Gain Cell Topology with an Active Ultra-Wideband Input Matching in H-Band,” in Proc. European Microwave Int. Circuits Conf. EuMIC, Utrecht, pp. 1–4, 2020.
    35. 301. I. Kallfass, “Active Electronic Transceivers for THz Communication Systems,” ACRC Semiconductor Webinars, Israel Institute of Technology, Sep. 2020.
    36. 302. K. Sharma et al., “A Robust Approach for Characterization of Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter,” Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, vol. 2020-March, pp. 1532–1536, 2020.
    37. 303. K. M. Baron, K. Sharma, M. Nitzsche, P. Ziegler, D. Koch, and I. Kallfass, “Characterization of threshold voltage for application-oriented power cycling conditions for wide-bandgap power devices,” PCIM Europe Conference Proceedings, vol. 1, pp. 1344–1350, 2020.
    38. 304. M. Basler et al., “Monolithic integration of inductive components in a GaN-on-Si technology,” CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems, pp. 63–68, 2020.
    39. 305. J. Christoph Scheytt, D. Wrana, M. Bahmanian, and I. Kallfass, “Ultra-Low Phase Noise Frequency Synthesis for THz Communications Using Optoelectronic PLLs,” 2020 3rd International Workshop on Mobile Terahertz Systems, IWMTS 2020, 2020.
    40. 306. J. Weimer, D. Koch, M. Nitzsche, M. Zehelein, and I. Kallfass, “Efficiency Requirements for Passively Cooled Converters with Thermal Measurement Based 3D-FEM Simulation,” 2020 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe, 2020.
    41. 307. K. Sharma and I. Kallfass, “Robust Approach for Characterization of Junction Temperature of SiC power devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter,” in Proc. Applied Power Electronics Conf. (APEC), New Orleans, 2020.
    42. 308. K. Sharma et al., “Robust Approach for Characterization of Junction Temperature of SiC power devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter,” in Proc. Applied Power Electronics Conf. (APEC), New Orleans, pp. 1532–1536, Mar. 2020.
    43. 309. M. T. Koller et al., “The exploratory in-orbit verification of an E-band link (EIVE) cubesat project,” 10th Nano Satellite Symposium, Istanbul, 2020.
    44. 310. M. Basler, R. Moench, S.and Reiner, P. Waltereit, R. Quay, I. Kallfass, and O. Ambacher, “Monolithic Integration of Inductive Components in a GaN-on-Si Technology,” in. Proc. International Conference on Integrated Power Electronics Systems (CIPS), Berlin, 2020.
    45. 311. S. Moench, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass, “A 600 V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020.
    46. 312. B. Schoch, U. Mohr, S. Klinkner, and I. Kallfass, “Towards a Cubesat Mission for a Wideband Data Transmission in E-Band,” in Radio Wireless Week RWW, San Antonio, TX, pp. 1–4, 2020.
    47. 313. J. Weimer, A. Bhushan Sharma, T. Huesgen, D. Koch, and I. Kallfass, “Thermal study on leadframe dimensioning for high power dissipation and low inductance commutation cells,” PCIM Europe Conference Proceedings, vol. 1, pp. 928–935, 2020.
    48. 314. D. Koch et al., “Static and dynamic characterization of a monolithic integrated temperature sensor in a 600 v gan power ic,” PCIM Europe Conference Proceedings, vol. 1, pp. 896–902, 2020.
    49. 315. K. Sharma et al., “Characterization of the junction temperature of SiC power devices via quasi-threshold voltage as temperature sensitive electrical parameter,” CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems, pp. 386–391, 2020.
    50. 316. S. Moench et al., “A 600 V GaN-on-Si power IC with integrated gate driver, freewheeling diode, temperature and current sensors and auxiliary devices,” CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems, pp. 69–74, 2020.
    51. 317. J. Weimer, D. Koch, M. Nietzsche, M. Zehelein, and I. Kallfass, “Efficiency Requirements for Passively Cooled Converters with Thermal Measurement Based 3D-FEM Simulation,” 22nd European Conference on Power Electronics and Applications (EPE′20 ECCE Europe), pp. 1–8, 2020, doi: 10.23919/EPE20ECCEEurope43536.2020.9215643.
    52. 318. S. Moench et al., “A 600 V GaN-on-Si Power IC with Integrated Gate Driver, Freewheeling Diode, Temperature and Current Sensors and Auxiliary Devices,” in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, 2020.
    53. 319. I. Kallfass, I. Dan, P. Szriftgiser, and G. Ducournau, “High Capacity Terahertz Communication Links Combining Photonic and Electronic Technologies in the Transmit-Receive Frontend,” in Proc. 9th International Workshop on Terahertz Technology and Applications, Kaiserslautern, 2020.
    54. 320. B. Schoch, A. Tessmann, and I. Wagner, S. Kallfass, “E-band Balanced Broadband Driver Amplifier MMIC with 1.8 THz Gain-Bandwidth Product,” in Proc. German Microwave Conference (GeMIC), Stuttgart, pp. 1–4, 2020.
    55. 321. M. Basler, S. Reiner, R Moench, P. Waltereit, R. Quay, I. Kallfass, and O. Ambacher, “Large-Area Lateral AlGaN/GaN-on-Si Field-Effect Rectifier with 0.2 V Turn-On Voltage,” IEEE Electron Device Letters, vol. 41, Art. no. 7, May 2020, doi: 10.1109/LED.2020.2994656.

  8. 2019

    1. 322. D. Humphreys et al., “An overview of the Meteracom Project,” Wireless World Research Forum, London, 2019.
    2. 323. I. Kallfass and I. Dan, “Active Electronic Transceivers for THz Communication Systems,” IBM Research, Zuerich, colloquium presentation, 2019.
    3. 324. P. Harati and I. Kallfass, “Time Domain Characterization of Frequency Dividers,” IEEE Microwave and Wireless Components Letters, pp. 1–4, 2019.
    4. 325. S. Mönch, R. Reiner, P. Waltereit, D. Meder, M. Masler, R. Quay, O. Ambacher, I. Kallfass, “Asymmetrical Substrate-Biasing Effects and 350 V Operation of Symmetrical Monolithic Normally-Off GaN-on-Si Half-Bridges,” in Proc. 7th IEEE Workshop on Wide Bandgap Power Devices and Applications, pp. 1–6, 2019.
    5. 326. B. Schoch, L. Manoliu, J. Keim, S. Chartier, S. Klinkner, and I. Kallfass, “Link budget analysis of E- and W-band satellite services,” in 25th Ka and Broadband Communications Conference, Sorrento, pp. 1–8, 2019.
    6. 327. I. Kallfass, “300 GHz HEMT Transceivers and Comm/Imaging Applications,” Summer THz Array Radar Topology Workshop (START), Caltech, Pasadena, 2019.
    7. 328. C. M. Grotsch, B. Schoch, S. Wagner, and I. Kallfass, “A Highly Linear FMCW Radar Chipset in H-Band with 50 GHz Bandwidth,” IEEE MTT-S International Microwave Symposium Digest, vol. 2019-June, pp. 646–649, 2019.
    8. 329. I. Dan et al., “A 300GHz Quadrature Down-Converter S-MMIC for Future Terahertz Communication,” in 2019 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), IEEE, Nov. 2019. doi: 10.1109/comcas44984.2019.8958300.
    9. 330. S. M. Dilek, B. Schoch, and I. Kallfass, “Performance analysis of real-time full-duplex e-band link,” EuRAD 2019 - 2019 16th European Radar Conference, pp. 341–344, 2019.
    10. 331. B. Schoch, A. Tessmann, A. Leuther, S. Wagner, and I. Kallfass, “300 GHz broadband power amplifier with 508 GHz gain-bandwidth product and 8 dBm output power,” in 2019 IEEE MTT-S International Microwave Symposium (IMS), IEEE, Jun. 2019. doi: 10.1109/mwsym.2019.8700754.
    11. 332. I. Kallfass et al., “High System Gain E-Band Link in a Wideband Aircraft-to-Ground Data Transmission,” 2019 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, COMCAS 2019, 2019.
    12. 333. I. Dan et al., “A 300GHz Quadrature Down-Converter S-MMIC for Future Terahertz Communication,” in 2019 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), Nov. 2019, pp. 1–6. doi: 10.1109/COMCAS44984.2019.8958300.
    13. 334. B. Schoch, A. Tessmann, A. Leuther, S. Wagner, and I. Kallfass, “260 GHz Broadband Power Amplifier MMIC,” in 2019 12th German Microwave Conference (GeMiC), IEEE, Mar. 2019. doi: 10.23919/gemic.2019.8698140.
    14. 335. J. Acuna, T. Rupp, M. Sonner, M. Klingler, B. Metais, and I. Kallfass, “Influence of Power Cycle On-State Duration on the Lifetime of Power Module Die-Attach Layers,” THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems, 2019.
    15. 336. A. Dyskin and I. Kallfass, “Feasibility study of the feed-forward carrier recovery technique for E-band integrated receivers,” IET Circuits, Devices and Systems, vol. 13, Art. no. 8, 2019.
    16. 337. B. Schoch, L. Manoliu, J. Keim, S. Chartier, S. Klinkner, and I. Kallfass, “LINK-BUDGET ANALYSIS OF W- AND E-BAND SATELLITE SERVICES,” Ka and Broadband Communications Conference, vol. 2019-October, 2019.
    17. 338. A. Dyskin, S. Wagner, and I. Kallfass, “A Compact Resistive Quadrature Low Noise K<inf>a</inf>-Band VCO SiGe HBT MMIC,” GeMiC 2019 - 2019 German Microwave Conference, pp. 95–98, 2019.
    18. 339. I. Dan, G. Ducournau, S. Hisatake, P. Szriftgiser, R.-P. Braun, and I. Kallfass, “A Superheterodyne 300 GHz Wireless Link for Ultra-Fast Terahertz Communication Systems,” 2019 49th European Microwave Conference, EuMC 2019, pp. 734–737, 2019.
    19. 340. S. M. Dilek, E. R. Bammidi, and I. Kallfass, “E-band simplex wireless data transmission and bandwidth-dependent performance analysis based on OFDM signals,” GeMiC 2019 - 2019 German Microwave Conference, pp. 63–66, 2019.
    20. 341. I. Kallfass, I. Dan, P. Szriftgiser, V. Chinni, M. Zaknoune, and G. Ducournau, “300 GHz Wireless Communication Systems Exploiting the Benefits of Combining Photonic and Electronic Transceiver Components,” International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, vol. 2019-September, 2019.
    21. 342. J. Winkler, J. Homoth, and I. Kallfass, “Electroluminescence-based Junction Temperature Measurement Approach for SiC Power MOSFETs,” IEEE Transactions on Power Electronics, vol. 35, Art. no. 3, Jul. 2019, doi: 10.1109/TPEL.2019.2929426.
    22. 343. E. R. Bammidi, A. Javed, K. Krishnegowda, and I. Kallfass, “A Differential Traveling Wave Active Power Divider in 130 nm SiGe:BiCMOS Technology for Application in Receiver Synchronization,” in Proc. European Microwave Int. Circuits Conf. EuMIC, Paris, pp. 1–4, 2019.
    23. 344. J. Weimer and I. Kallfass, “Soft-Switching Losses in GaN and SiC Power Transistors Based on New Calorimetric Measurements,” in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, pp. 455–458. doi: 10.1109/ISPSD.2019.8757650.
    24. 345. S. Moench, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass, “Integrated Current Sensing in GaN Power ICs,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019.
    25. 346. I. Kallfass, “High Capacity Millimeterwave Wireless Data Links,” VDI Fachkonferenz 5G in der Automation, Baden-Baden, 2019.
    26. 347. M. Basler et al., “A Pseudo-Complementary GaN-Based Gate Driver with Reduced Static Losses,” in Proc. 7th IEEE Workshop on Wide Bandgap Power Devices and Applications, pp. 1–6, 2019.
    27. 348. G. Ducournau, P. Szriftgiser, I. Dan, V. Chinni, M. Zaknoune, and I. Kallfass, “100 Gbit/s, 300 GHz Wireless Communication Link Combining Photonic Transmitter and Electronic Receiver,” in Proc. 44rd Int. Conf. on Infrared, Millimeter and Terahertz Waves (IRMMW), Paris, 2019.
    28. 349. I. Dan, S. Hisatake, P. Szriftgiser, R. P. Braun, I. Kallfass, and G. Ducournau, “Towards super-heterodyne THz links pumped by photonic local oscillators,” in Proc. 44rd Int. Conf. on Infrared, Millimeter and Terahertz Waves (IRMMW), Paris, 2019.
    29. 350. J. Acuna, T. Rupp, M. Sonner, M. Klingler, B. Metais, and I. Kallfass, “Influence of Power Cycle Turn-On Duration on the Lifetime of Power Module Die-Attach Layers,” in Proc. 25th Int. Workshop on Thermal Investigations of ICs and Systems (Therminic), Lecco, 2019.
    30. 351. C. Grötsch, S. Wagner, A. Leuther, D. Meier, and I. Kallfass, “A Highly Linear FMCW Radar Chipset in H-Band with 50 GHz Bandwidth,” in Proc. IEEE Int. Microwave Symposium, Boston, 2019.
    31. 352. B. Schoch, A. Tessmann, A. Leuther, S. Wagner, I. Kallfass, “300 GHz broadband power amplifier with 508 GHz gain-bandwidth product and 8 dBm output power,” in Proc. IEEE Int. Microwave Symposium, Boston, 2019.
    32. 353. W. Johannes, S. Stanko, M. Caris, and I. Kallfass, “Investigation of a new Bistatic FMCW-Receiver at 94 GHz with Wireless Synchronization,” in Proc. German Microwave Conference (GeMIC), Stuttgart, pp. 1–4, 2019.
    33. 354. D. Koch, S. Araujo, and I. Kallfass, “Accuracy Analysis of Calorimetric Loss Measurement for Benchmarking Wide Bandgap Power Transistors under Soft-Switching Operation,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia), May 2019.
    34. 355. M. Basler, S. Moench, R. Reiner, P. Waltereit, R. Quay, and I. Kallfass, “A GaN-on-Si Based Logic, Driver and DC-DC Converter Circuit with Closed-Loop Peak Current-Mode Control,” in. Proc. PCIM Europe, Nuremberg, Germany, May 2019.
    35. 356. U. Mohr, B. Schoch, I. Kallfass, and S. Klinkner, “Exploratory In-orbit Verification of a Wideband E/W-Band Data Downlink,” 12th Pico- and Nano-Satellite Workshop, Wuerzburg, Germany, 2019.
    36. 357. C. M. Grotsch, S. Wagner, and I. Kallfass, “An Active Gate-Pumped Transconductance Upconverter for Terahertz Frequencies,” GeMiC 2019 - 2019 German Microwave Conference, pp. 236–239, 2019.
    37. 358. M. Berroth et al., “Welcome Message,” GeMiC 2019 - 2019 German Microwave Conference, 2019.
    38. 359. C. M. Groetsch and I. Wagner, S. andKallfass, “An Active Gate Pumped Frequency Upconverter for Terahertz Frequencies,” in Proc. German Microwave Conference (GeMIC), Stuttgart, pp. 1–4, 2019.
    39. 360. I. Hammoud, N. Bauer, I. Kallfass, and R. Kennel, “Optimized Capacitive Active Ripple Compensation Topology for a 3.7 kW Single Phase High Power Density On-Board Charger of Electric Vehicles,” Electrical Engineering, Springer, vol. 101, Art. no. 3, 2019, doi: https://rd.springer.com/article/10.1007/s00202-019-00818-5.
    40. 361. A. Dyskin, S. Wagner, and I. Kallfass, “A Compact Resistive Quadrature Low Noise Ka-Band VCO SiGe HBT MMIC,” in Proc. 12th German Microwave Conference (GeMIC), Stuttgart, pp. 1–4, 2019.
    41. 362. I. Kallfass, “Satellite Communication in E,W-Band - Motivation, Viability, Compatibility,” ITG Fachausschuss HF2 Funksysteme Oeffentliche Diskussionssitzung Trends und Entwicklungen in der Weltraumnutzung, 2019.
    42. 363. C. M. Groetsch, S. Wagner, L. John, and I. Kallfass, “A Dual Gate Downconverter for H-Band Employing An Active Load,” in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, pp. 1–4, 2019.
    43. 364. J. Winkler, J. Homoth, H. Bartolf, and I. Kallfass, “Study on transient Light Emission of SiC Power MOSFETs regarding the Sensing of Source-Drain Currents in hard switched Power Electronic Applications,” in. Proc. PCIM Europe, Nuremberg, Germany, 2019.
    44. 365. J. Winkler, J. Homoth, and I. Kallfass, “Novel Approach for Temperature and Current Sensing for Wide Bandgap Materials,” in Proc. Strategic Materials Conference (SMC), Munich, 2019.
    45. 366. I. Kallfass, “Active Electronic Transceivers for THz Communication Systems,” Huawei Workshop THz Communication and Sensor Technologies, Paris, Sep. 2019.
    46. 367. L. Yan, T. Li, and I. Kallfass, “Characterization and modeling of the reverse behavior of a vertical power MOSFET,” Microwave and Optical Technology Letters, 2019.
    47. 368. M. Basler et al., “A GaN-on-Si-based logic, driver and DC-DC converter circuit with closed-loop peak current-mode control,” PCIM Europe Conference Proceedings, pp. 1492–1497, 2019.
    48. 369. S. Moench et al., “Asymmetrical substrate-biasing effects at up to 350V operation of symmetrical monolithic normally-off GaN-on-Si half-bridges,” 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2019, pp. 28–35, 2019.
    49. 370. L. Manoliu, C. Grotsch, and I. Kallfass, “Design and Optimization of Mixers Using Load-Pull Analysis of Higher Order Intermodulation Products,” GeMiC 2019 - 2019 German Microwave Conference, pp. 135–138, 2019.
    50. 371. I. Dan et al., “A 300 GHz Quadrature Down-Converter S-MMIC for Future Terahertz Communication,” in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, pp. 1–4, 2019.
    51. 372. M. Basler et al., “A pseudo-complementary GaN-based gate driver with reduced static losses,” 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2019, pp. 93–98, 2019.
    52. 373. C. M. Grotsch, S. Wagner, L. John, and I. Kallfass, “A Dual-Gate Downconverter for H-Band Employing an Active Load,” 2019 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, COMCAS 2019, 2019.
    53. 374. L. Manoliu, C. M. Groetsch, and I. Kallfass, “Design and Optimization of Mixers Using Load-Pull Analysis of Higher Order Intermodulation Products,” in Proc. German Microwave Conference (GeMIC), Stuttgart, pp. 1–4, 2019.
    54. 375. C. M. Groetsch, S. Wagner, and I. Kallfass, “An Active Gate Pumped Frequency Upconverter for Terahertz Frequencies,” in Proc. German Microwave Conference (GeMIC), Stuttgart, pp. 1–4, 2019.

  9. 2018

    1. 376. S. M. Dilek, P. Harati, R. Henneberger, and I. Kallfass, “Performance Analysis of E-band Duplex Transceiver Based on Waveguide Diplexer Filters,” in Proc. European Microwave Conf. EuMC, Madrid, pp. 1–4, 2018.
    2. 377. C. Salcines, B. Holzinger, and I. Kallfass, “Characterization of intrinsic capacitances of power transistors under high current conduction based on pulsed S-Parameter measurements,” in Proc. 6th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Atlanta, 2018.
    3. 378. J. Winkler, J. Homoth, and I. Kallfass, “Exploiting Photoluminescence for New Implementations of SiC Power Semiconductor Devices,” in. Proc. 31st International Electric Vehicles Symposium and Exhibition, EVS 31, and International Electric Vehicle Technology Conference 2018, EVTeC, Kobe, 2018.
    4. 379. I. Kallfass et al., “Wideband Data Transmission in E-Band Between an Aircraft and a Ground Station,” in Proc. 9th Advanced Satellite Multimedia Systems Conference (ASMS) and 15th Signal Processing for Space Communications Workshop (SPSC), Berlin, 2018.
    5. 380. J. Winkler, J. Homoth, and I. Kallfass, “Electroluminescence in power electronic applications: Utilization of p-n Junctions in Power Semiconductors as unintentional Light Emitting Diodes for Current and Temperature Sensing,” 31st International Electric Vehicle Symposium and Exhibition, EVS 2018 and International Electric Vehicle Technology Conference 2018, EVTeC 2018, 2018.
    6. 381. S. Moench et al., “Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-Bridges,” 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018, pp. 242–246, 2018.
    7. 382. D. Müller et al., “A Novel Unit Cell for Active Switches in the Millimeter-Wave Frequency Range,” Journal of Infrared, Millimeter, and Terahertz Waves, vol. 39, Art. no. 2, 2018.
    8. 383. C. M. Grotsch, S. Wagner, A. Leuther, D. Meier, and I. Kallfass, “Ultra-Broadband Frequency Multiplier MMICs for Communication and Radar Applications,” EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference, pp. 113–116, 2018.
    9. 384. P. Harati, A. Dyskin, and I. Kallfass, “Analog Carrier Recovery for Broadband Wireless Communication Links,” 2018 15th European Radar Conference, EuRAD 2018, pp. 381–384, 2018.
    10. 385. J. Winkler, J. Homoth, and I. Kallfass, “Utilization of parasitic luminescence from power semiconductor devices for current sensing,” PCIM Europe Conference Proceedings, Art. no. 225809, 2018.
    11. 386. J. Acuna, J. Walter, and I. Kallfass, “Very Fast Short Circuit Protection for Gallium-Nitride Power Transistors Based on Printed Circuit Board Integrated Current Sensor,” 2018 20th European Conference on Power Electronics and Applications, EPE 2018 ECCE Europe, 2018.
    12. 387. D. Muller, P. Pahl, A. Tessmann, A. Leuther, T. Zwick, and I. Kallfass, “A WR3-Band 2-bit Phase Shifter Based on Active SPDT Switches,” IEEE Microwave and Wireless Components Letters, Sep. 2018, doi: 10.1109/LMWC.2018.2853085.
    13. 388. C. Grötsch, A. Tessmann, and I. Kallfass, “An Active Multiplier-by-Six S-MMIC for 500 GHz,” in Proc. 43rd Int. Conf. on Infrared, Millimeter and Terahertz Waves (IRMMW), Nagoya, pp. 1–4, 2018.
    14. 389. I. Dan, B. Schoch, G. Eren, S. Wagner, A. Leuther, and I. Kallfass, “Considerations on Local Oscillator Isolation in a Terahertz Wireless Link Used for Future Communication Systems,” in Proc. 43rd Int. Conf. on Infrared, Millimeter and Terahertz Waves (IRMMW), Nagoya, 2018.
    15. 390. A. Dyskin and I. Kallfass, “Phase noise prediction for static frequency dividers and ring oscillators,” Electronics Letters, pp. 1–2, 2018.
    16. 391. S. M. Dilek, P. Harati, E. R. Bammidi, and I. Kallfass, “E-Band Transceiver System Characterization Based on Bandwidth Dependent Linear Impairments,” in Proc. German Microwave Conference (GeMIC), Freiburg, pp. 1–4, 2018.
    17. 392. S. Moench et al., “Towards Highly-Integrated High-Voltage Multi-MHz GaN-on-Si Power ICs and Modules,” in. Proc. PCIM Europe, Nuremberg, Germany, 2018.
    18. 393. J. Walter, J. Acuna, and I. Kallfass, “Design and Implementation of an Integrated Current Sensor for a Gallium Nitride Half-Bridge,” in. Proc. PCIM Europe, Nuremberg, Germany, 2018.
    19. 394. J. Winkler, J. Juergen, S. Schoser, J. Homoth, and I. Kallfass, “Utilization of Parasitic Luminescence from Power Semiconductor Devices for Current Sensing,” in. Proc. PCIM Europe, Nuremberg, Germany, 2018.
    20. 395. I. Kallfass, “MMIC-based THz frontends for wireless communication beyond 100 Gbps,” EPSRC THz Communications Meeting, London, 2018.
    21. 396. M. Schmidt, J. Säily, T. Tikka, L. Cupido, M. Rösch, and B. Schoch, “Architecture of a Cubesat based W-band channel measurements system,” Ka and Broadband Communications Conference, vol. 2018-October, 2018.
    22. 397. M. Schmidt, J. Säily, T. Tikka, L. Cupido, M. Rösch, and B. Schoch, “Architecture of a Cubesat based W-band channel measurements system,” in in 24th Ka and Broadband Communications Conference, 2018.
    23. 398. C. Salcines, S. Khandelwal, and I. Kallfass, “Characterization and Modeling of the Impact of the Substrate Potential in the Dynamic and Static Behavior of Power GaN-on-Si HEMTs,” 2018 IEEE 19th Workshop on Control and Modeling for Power Electronics, COMPEL 2018, 2018.
    24. 399. L. Yan and I. Kallfass, “Adopting the BSIM3 Model to Describe the DC-IV Characteristics of a Vertical Power MOSFET,” Proceedings - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018, 2018.
    25. 400. S. M. Dilek, R. Henneberger, and I. Kallfass, “Performance Analysis of E-Band Duplex Transceiver Based on Waveguide Diplexer Filters,” 2018 48th European Microwave Conference, EuMC 2018, pp. 1069–1072, 2018.
    26. 401. E. R. Bammidi and I. Kallfass, “Design of an error detector circuit for BPSK costas loop for carrier synchronization in millimeter-wave receivers,” GeMiC 2018 - 2018 German Microwave Conference, vol. 2018-January, pp. 335–338, 2018.
    27. 402. C. Salcines, A. Kruglov, and I. Kallfass, “A Novel Characterization Technique to Extract High Voltage - High Current IV Characteristics of Power MOSFETs from Dynamic Measurements,” 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2018, pp. 1–6, 2018.
    28. 403. D. Müller, J. Schäfer, A. Lipp, A. Leuther, T. Zwick, and I. Kallfass, “A high-efficiency broadband WR3 bond wire on-chip antenna,” IET Conference Publications, vol. 2018, Art. no. CP741, 2018.
    29. 404. C. M. Grotsch, H. Mabler, A. Leuther, and I. Kallfass, “An Active Multiplier-by-Six S-MMIC for 500 GHz,” International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, vol. 2018-September, 2018.
    30. 405. C. Salcines, S. Moench, and I. Kallfass, “Four Terminal \C-V\ Characterization Technique for Lateral Power \GaN-on-Si\ \HEMTs\ Based on 3-Port \S-Parameter\ Measurements,” in CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems (CIPS 2018), Stuttgart, Germany, Mar. 2018.
    31. 406. J. Schaefer, G. Eren, D. Mueller, I. Kallfass, and T. Zwick, “Tx Frontend Concept for FMCW Radar with Frequency Scanning Antenna at 240 GHz,” Int. Workshop on Antenna Technology (iWAT), Nanjing, 2018.
    32. 407. C. Salcines, A. Kruglov, and I. Kallfass, “A novel technique to accurately extract extended high voltage output characteristics of power MOSFETs from dynamic measurements,” in Proc. 6th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Atlanta, 2018.
    33. 408. D. Mueller, P. Pahl, A. Tessmann, A. Leuther, T. Zwick, and I. Kallfass, “A WR3-band 2-bit Phase Shifter Based on Active SPDT Switches,” IEEE Microwave and Wireless Component Letters, vol. 28, Art. no. 9, Sep. 2018.
    34. 409. D. Mueller, F. Boes, A. Tessmann, A. Leuther, T. Zwick, and I. Kallfass, “Crosstalk Analysis and Correction in On-Wafer Measurements at WR-3 Band Frequencies,” in Proc. German Microwave Conference (GeMIC), Freiburg, pp. 1–4, 2018.
    35. 410. D. Mueller et al., “A Novel Unit Cell for Active Switches in the Millimeter-Wave Frequency Range,” Int. Journal of Infrared, Millimeter, and Terahertz Waves, vol. 39, Art. no. 2, Feb. 2018.
    36. 411. C. Salcines, S. Khandelwal, and I. Kallfass, “Characterization and modeling of the impact of the bulk potential in the dynamic and static behavior of power GaN-on-Si HEMTs,” in Proc. 19th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL, 2018.
    37. 412. D. Muller, J. Schafer, H. Massler, M. Ohlrogge, T. Zwick, and I. Kallfass, “Impact of Ground Via Placement in On-Wafer Contact Pad Design up to 325 GHz,” IEEE Transactions on Components, Packaging and Manufacturing Technology, Aug. 2018, doi: 10.1109/TCPMT.2018.2811482.
    38. 413. A. Dyskin and I. Kallfass, “Analytical Approach for SiGe HBT Static Frequency Divider Design for Millimeter-Wave Frequency Operation,” IEEE Transactions on Microwave Theory and Techniques, Mar. 2018, doi: 10.1109/TMTT.2017.2775244.
    39. 414. D. Muller et al., “Bandwidth Optimization Method for Reflective-Type Phase Shifters,” IEEE Transactions on Microwave Theory and Techniques, Apr. 2018, doi: 10.1109/TMTT.2017.2779156.
    40. 415. I. Dan, C. M. Grotsch, S. Shiba, and I. Kallfass, “Considerations on Local Oscillator Isolation in a Terahertz Wireless Link Used for Future Communication Systems,” International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, vol. 2018-September, 2018.
    41. 416. S. Moench et al., “Towards highly-integrated high-voltage multi-mhz gan-on-si power ics and modules,” PCIM Europe Conference Proceedings, Art. no. 225809, 2018.
    42. 417. A. Dyskin, P. Harati, and I. Kallfass, “Layout and Interconnect Optimization for Low-Power and High-Sensitivity Operation of $E$ -Band SiGe HBT Frequency Dividers,” IEEE Microwave and Wireless Components Letters, Jan. 2018, doi: 10.1109/LMWC.2017.2772169.
    43. 418. J. Schäfer, D. Müller, T. Zwick, G. Eren, and I. Kallfass, “Tx front end concept for FMCW radar with frequency scanning antenna at 240 GHz,” 2018 IEEE International Workshop on Antenna Technology, iWAT2018 - Proceedings, pp. 1–4, 2018.
    44. 419. J. Acuna, A. Seidel, and I. Kallfass, “Design and implementation of a Gallium-Nitride-based power module for light electro-mobility applications,” Proceedings - 2017 IEEE Southern Power Electronics Conference, SPEC 2017, vol. 2018-January, pp. 1–6, 2018.
    45. 420. D. Müller, F. Boes, A. Tessmann, A. Leuther, T. Zwick, and I. Kallfass, “Crosstalk analysis and correction in on-wafer measurements at WR-3 band frequencies,” GeMiC 2018 - 2018 German Microwave Conference, vol. 2018-January, pp. 160–163, 2018.
    46. 421. C. Salcines, S. Moench, B. Spudic, and I. Kallfass, “C-V characterization technique for four-Terminal gan-on-Si HEMTs based on 3-Port S-Parameter measurements,” CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems, pp. 111–115, 2018.
    47. 422. I. Kallfass, I. Dan, S. Rey, A. Tessmann, A. Leuther, and T. Kuerner, “MMIC Electronic Steerable 4-Channel Phased-Array Transmit-Receive Frontend for 300 GHz Wireless Personal Area Networks,” in Proc. 8th International Workshop on Terahertz Technology and Applications, Kaiserslautern, 2018.
    48. 423. D. Mueller, J. Schaefer, H. Massler, M. Ohlrogge, T. Zwick, and I. Kallfass, “Impact of Ground Via Placement in On-Wafer Contact Pad Design up to 325 GHz,” IEEE Transactions on Components, Packaging and Manufacturing Technology, vol. 8, Art. no. 8, 2018, doi: 10.1109/TCPMT.2018.2811482.
    49. 424. J. Acuna, W. Janes, and I. Kallfass, “Very Fast Short Circuit Protection for Gallium-Nitride High Electron Mobility Transistors Based on Integrated Current Sensor,” in Proc. European Conf. on Power Electronics (EPE), Riga, 2018.
    50. 425. D. Mueller, J. Schaefer, A. Lipp, A. Leuther, T. Zwick, and I. Kallfass, “A High-Efficiency Broadband WR3 Bond Wire On-Chip Antenna,” in Proc. European Conf. on Antennas and Propagation (EuCAP), London, pp. 1–4, 2018.
    51. 426. L. Yan and I. Kallfass, “A General Model Translation Approach for Vertical Structure Power MOSFETs Based on BSIM3 Model,” in Proc. IEEE International Power Electronics and Application Conference and Exposition (PEAC), 2018.

  10. 2017

    1. 427. I. Dan, S. Shiba, E. Rosello, P. Harati, S. Dilek, and I. Kallfass, “Measurement of Complex Transfer Function of Analog Transmit-Receive Frontends for Terahertz Wireless Communications,” in Proc. 47th European Microwave Conf. EuMC, Nuremberg, pp. 1–4, 2017.
    2. 428. D. Mueller et al., “Bandwidth Optimization Method for Reflective-Type Phase Shifters,” IEEE Trans. on Microwave Theory and Techniques, vol. 66, Art. no. 4, 2017, doi: 10.1109/TMTT.2017.2779156.
    3. 429. P. Harati et al., “E-Band Downlink Wireless Data Transmission for Future Satellite Communication,” in Proc. IEEE Radio and Wireless Symposium, Phoenix, 2017.
    4. 430. S. Moench, C. Salcines, Y. Li, and I. Kallfass, “Sensitivity Analysis of 600 V Lateral GaN-on-Si HEMTs to Substrate Potential by 4-Terminal IV, CV, Qg Characterization for the Improvement of HEMT Models,” in Proc. IEEE 18th Workshop on Control and Modeling for Power Electronics (COMPEL), pp. 1–4, 2017.
    5. 431. I. Dan, B. Schoch, G. Eren, S. Wagner, A. Leuther, and I. Kallfass, “A 300 GHz MMIC-based Quadrature Receiver for Wireless Terahertz Communications,” in Proc. 42 International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW), Cancun, 2017.
    6. 432. P. Harati et al., “Is E-Band Satellite Communication Viable?: Advances in Modern Solid-State Technology Open Up the Next Frequency Band for SatCom,” IEEE Microwave Magazine, vol. 18, Art. no. 7, Nov. 2017, doi: 10.1109/MMM.2017.2738898.
    7. 433. J. C. Scheytt, A. R. Javed, E. R. Bammidi, K. KrishneGowda, I. Kallfass, and R. Kraemer, “100 Gbps Wireless System and Circuit Design Using Parallel Spread-Spectrum Sequencing,” Frequenz, vol. 71, Art. no. 9–10, 2017.
    8. 434. H. Afewerki, C. Lautensack, N. Böttcher, and I. Kallfass, “Design Approach and Analysis of a MOSFET with Monolithic Integrated EMI Snubber for Low Voltage Automotive Applications,” 2017 International Symposium on Electromagnetic Compatibility - EMC EUROPE 2017, EMC Europe 2017, 2017.
    9. 435. I. Kallfass, S. M. Dilek, and I. Dan, “Signal quality impairments by analog frontend non-idealities in a 300 GHz wireless link,” 2017 11th European Conference on Antennas and Propagation, EUCAP 2017, pp. 1618–1621, 2017.
    10. 436. S. Moench et al., “Effect of substrate termination on switching loss and switching time using 600 v GaN-on-Si HEMTs with integrated gate driver in half-bridges,” 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017, vol. 2017-December, pp. 257–264, 2017.
    11. 437. D. Muller et al., “A 200-300 GHz 1:2 Active power divider MMIC,” International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2017.
    12. 438. C. Grotsch, A. Tessmann, S. Wagner, and I. Kallfass, “On-chip post-production tuning of I/Q frequency converters using adjustable coupler terminations,” 2017 12th European Microwave Integrated Circuits Conference, EuMIC 2017, vol. 2017-January, pp. 273–276, 2017.
    13. 439. E. R. Castillo, P. Harati, I. Kallfass, P. Hugler, C. Waldschmidt, and S. Shiba, “Spatial-frequency-scanning data transmission for mmW multi-user wireless communication systems,” European Microwave Week 2017: Ä Prime Year for a Prime Event”, EuMW 2017 - Conference Proceedings; 47th European Microwave Conference, EuMC 2017, vol. 2017-January, pp. 220–223, 2017.
    14. 440. P. Pahl, S. Wagner, H. Massler, A. Leuther, I. Kallfass, and T. Zwick, “Efficiency Optimized Distributed Transformers for Broadband Monolithic Millimeter-Wave Integrated Power Amplifier Circuits,” IEEE Transactions on Microwave Theory and Techniques, Dec. 2017, doi: 10.1109/TMTT.2017.2729514.
    15. 441. S. Moench, C. Salcines, R. Li, Y. Li, and I. Kallfass, “Substrate potential of high-voltage GaN-on-Si HEMTs and half-bridges: Static and dynamic four-Terminal characterization and modeling,” 2017 IEEE 18th Workshop on Control and Modeling for Power Electronics, COMPEL 2017, 2017.
    16. 442. A. Dyskin, P. Harati, and I. Kallfass, “E-to-X-band phase detector for analog carrier recovery techniques,” 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, COMCAS 2017, vol. 2017-November, pp. 1–4, 2017.
    17. 443. I. Kallfass, J. Antes, A. Tessmann, T. Zwick, and R. Henneberger, “Multi-Gigabit high-range fixed wireless links at high millimeterwave carrier frequencies,” IEEE Radio and Wireless Symposium, RWS, pp. 45–48, 2017.
    18. 444. C. Grotsch, A. Tessmann, A. Leuther, and I. Kallfass, “Ultra-wideband quadrature receiver-MMIC for 240 GHz high data rate communication,” International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2017.
    19. 445. N. Boettcher, H. Afewerki, I. Kallfass, and C. Lautensack, “A novel approach for optimal design of monolithic integrated RC snubbers,” 2017 International Symposium on Electromagnetic Compatibility - EMC EUROPE 2017, EMC Europe 2017, 2017.
    20. 446. N. Boettcher, H. Afewerki, I. Kallfass, C. Lautensack, and C. Kluthe, “A Novel Approach for the Optimal Design of Integrated RC Snubbers,” in Proc. Int. Symp. and Exhibition on Electromagnetic Compatibility (EMC Europe), pp. 1–6, 2017.
    21. 447. S. M. Dilek, P. Harati, C. M. Groetsch, and I. Kallfass, “Performance Analysis of E-Band Transceivers based on IQ Up-Converter Impairments using a Circuit- to System-Level Approach,” in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, pp. 1–6, 2017.
    22. 448. H. Afewerki, C. Lautensack, N. Boettcher, and I. Kallfass, “Design Approach and Analysis of a MOSFET with Monolithic Integrated EMI Snubber for Low Voltage Automotive Applications,” in Proc. Int. Symp. and Exhibition on Electromagnetic Compatibility (EMC Europe), pp. 1–6, 2017.
    23. 449. J. Acuna and I. Kallfass, “Thermal Optimization of a Half-bridge Power Module based on Chip Scale GaN HEMTs,” in Proc. 19th Conference on Power Electronics and Applications EPE, Warsaw, 2017.
    24. 450. A. Dyskin, P. Harati, and I. Kallfass, “A Compact, Low Power and High Sensitivity E-Band Frequency Divider SiGe HBT MMIC,” in Proc. Austrochip Workshop on Microelectronics, Linz, pp. 1–4, 2017.
    25. 451. T. Merkle et al., “Testbed for phased array communications from 275 to 325 GHz,” in 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), Oct. 2017, pp. 1–4. doi: 10.1109/CSICS.2017.8240474.
    26. 452. D. Mueller et al., “Quad-Channel Beam Switching WR3-Band Transmitter MMIC,” in Proc. SPIE Defense + Security, Anaheim, 2017.
    27. 453. I. Kallfass, “600V Class GaN HEMT-Based Power Electronics,” Kolloquium am Ferdinand-Braun-Institut für Höchstfrequenztechnik, Berlin, 2017.
    28. 454. J. Acuna, A. Seidel, and I. Kallfass, “Development and Implementation of a Gallium Nitride based Power Module for Light Electro-mobility Applications,” in Proc. 3rd IEEE Southern Power Electronics Conference (SPEC), Puerto Varas, Chile, 2017.
    29. 455. A. Leuther et al., “InGaAs mHEMT Technology for High-Resolution Radar, Imaging and Communication,” in Proc. Compound Semiconductor Week (CSW), Berlin, 2017.
    30. 456. C. Salcines, I. Kallfass, H. Kakitani, and A. Mikata, “Full Characterization of High Voltage Power Transistor Intrinsic Capacitances based on a Single 2-Port S-Parameters Measurement,” in Proc. 19th Conference on Power Electronics and Applications EPE, Warsaw, 2017.
    31. 457. A. Dyskin, P. Harati, and I. Kallfass, “Layout and Interconnect Optimization for Low Power and High Sensitivity Operation of E-Band SiGe HBT Frequency Dividers,” IEEE Microwave and Wireless Components Letters, vol. 28, Art. no. 1, 2017, doi: 10.1109/LMWC.2017.2772169.
    32. 458. D. Muller et al., “A WR3-band reflective-type phase shifter MMIC with integrated amplifier for error- and loss compensation,” 2017 12th European Microwave Integrated Circuits Conference, EuMIC 2017, vol. 2017-January, pp. 1–4, 2017.
    33. 459. I. Dan, C. M. Grötsch, S. Shiba, and I. Kallfass, “Investigation of local oscillator isolation in a 300 GHz wireless link,” 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, COMCAS 2017, vol. 2017-November, pp. 1–5, 2017.
    34. 460. S. Moench, P. Hillenbrand, P. Hengel, and I. Kallfass, “Pulsed measurement of sub-nanosecond 1000 V/ns switching 600 v GaN HEMTs using 1.5 GHz low-impedance voltage probe and 50 Ohm scope,” 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2017, vol. 2017-December, pp. 132–137, 2017.
    35. 461. S. Moench, “Measurement and Switching in Sub-Nanoseconds with 600 V GaN HEMTs,” Tektronix Seminar, 2017.
    36. 462. D. Mueller et al., “A 200 - 300 GHz 1:2 Active Power Divider MMIC,” in Proc. 42 International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW), Cancun, pp. 1–4, 2017.
    37. 463. I. Dan, C.M. Groetsch, S. Shiba, I. Kallfass, “Investigation of Local Oscillator Isolation in a 300 GHz Wireless Link,” in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, pp. 1–6, 2017.
    38. 464. I. Kallfass, “Compound Semiconductor Based Microwave and Power Electronic Circuits,” Kolloquium “Bauelemente & Technologien, Institut für Halbleitertechnologie, Universität Stuttgart, 2017.
    39. 465. C. Grötsch, A. Tessmann, and I. Kallfass, “Ultra-Wideband Single-Balanced Quadrature Receiver-MMIC for 240 GHz High Data Rate Communication,” in Proc. 42 International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW), Cancun, pp. 1–4, 2017.
    40. 466. D. Müller et al., “Quad-channel beam switching WR3-band transmitter MMIC,” Proceedings of SPIE - The International Society for Optical Engineering, vol. 10189, 2017.
    41. 467. D. Muller et al., “Electromagnetic field simulation of MMICs including RF probe tips,” European Microwave Week 2017: Ä Prime Year for a Prime Event”, EuMW 2017 - Conference Proceedings; 47th European Microwave Conference, EuMC 2017, vol. 2017-January, pp. 900–903, 2017.
    42. 468. P. Harati, A. Dyskin, D. Mueller, and I. Kallfass, “Modulation type independent carrier recovery for broadband wireless communication systems,” International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2017.
    43. 469. J. Acuna and I. Kallfass, “Substrate Choice and Thermal Optimization of a Half-bridge Power Module based on Chip Scale GaN HEMTs,” 2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe, vol. 2017-January, 2017.
    44. 470. I. Dan, S. Rey, T. Merkle, T. Kurner, and I. Kallfass, “Impact of modulation type and baud rate on a 300GHz fixed wireless link,” IEEE Radio and Wireless Symposium, RWS, pp. 86–89, 2017.
    45. 471. D. Muller et al., “A 220-260 GHz medium power variable gain amplifier MMIC with low phase variation,” Asia-Pacific Microwave Conference Proceedings, APMC, pp. 29–32, 2017.
    46. 472. C. Salcines, Y. Pathak, and I. Kallfass, “Characterization of power transistors intrinsic parasitics based on 2-port S-Parameter measurements,” 2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe, vol. 2017-January, 2017.
    47. 473. P. Harati et al., “Is E-Band Satellite Communication Viable?,” IEEE Microwave Magazine, vol. 18, Art. no. 7, Oct. 2017, doi: 10.1109/MMM.2017.2738898.
    48. 474. D. Mueller et al., “Electromagnetic field simulation of MMICs including RF probe tips,” in Proc. 12th European Microwave Integrated Circuits Conf. EuMIC, Nuremberg, pp. 1–4, 2017.
    49. 475. S. Mönch et al., “Effect of Substrate Termination on Turn-On Switching Time in High-Voltage GaN-on-Si IC with 600 V HEMT and Gate Driver,” in Proc. 5th IEEE Workshop on Wide Bandgap Power Devices and Applications, pp. 1–6, 2017.
    50. 476. J. Weimer and I. Kallfass, “Multi-Domain Analysis of Power Electronic Modules with Rapid Finite Element Method Simulation,” in Proc. 6th Int. Education Forum on Environment and Energy Science, Tenerife, 2017.
    51. 477. I. Dan, S. Rey, T. Merkle, T. Kuerner, and I. Kallfass, “Experimental study of the receive signal quality dependence on modulation format and Baud rate in a 300 GHz Fixed Wireless Link,” in Proc. IEEE Radio and Wireless Symposium, Phoenix, 2017.
    52. 478. A. Dyskin and I. Kallfass, “Analytical Approach of SiGe HBT Static Frequency Divider Design for Millimeter-Wave Frequency Operation,” IEEE Trans. Microwave Theory and Techniques, vol. 66, Art. no. 3, Dec. 2017, doi: 10.1109/TMTT.2017.2775244.
    53. 479. I. Kallfass, “300 GHz Wireless Communication Frontend Based on a Highly Integrated GaAs mHEMT Chip Set,” Workshop Integrated Circuits for High Datarate THz-Communication, Eurpean Microwave Integrated Circuits Conf., Nuremberg, 2017.
    54. 480. D. Mueller, A. Tessmann, A. Leuther, T. Zwick, and I. Kallfass, “A WR3-Band reflective-type phase shifter MMIC with integrated amplifier for error- and loss-compensation,” in Proc. 12th European Microwave Integrated Circuits Conf. EuMIC, Nuremberg, pp. 1–4, 2017.
    55. 481. D. Mueller et al., “A 220-260 GHz Medium Power Variable Gain Amplifier MMIC with Low Phase Variation,” in Proc. Asia Pacific Microwave Conference (APMC), pp. 1–4, 2017.

  11. 2016

    1. 482. T. Kuerner, T. Merkle, and I. Kallfass, “Ultrahohe Datenraten bei Terahertz-Frequenzen übertragen,” Presseinformationen Forschung, TU Braunschweig, 2016.
    2. 483. S. Moench et al., “High Thermal Conductance AlN Power Module with Hybrid Integrated Gate Drivers and SiC Trench MOSFETs for 2 kW Single-Phase PV Inverter,” in Proc. 18th European Conference on Power Electronics and Applications (EPE), Karlsruhe, Germany, 2016.
    3. 484. S. Moench et al., “High thermal conductance AlN power module with hybrid integrated gate drivers and SiC trench MOSFETs for 2 kW single-phase PV inverter,” 2016 18th European Conference on Power Electronics and Applications, EPE 2016 ECCE Europe, 2016.
    4. 485. S. Mönch et al., “Single-Input GaN Gate Driver based on Depletion-Mode Logic integrated with a 600 V GaN-on-Si Power Transistor,” in Proc. 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, pp. 1–6, 2016.
    5. 486. I. Kallfass, “World record in terrestrial radio transmission, Multi-Gigabit wireless communication over the highest distances,” Press release 05/20/2016, University of Stuttgart, May 2016.
    6. 487. D. Schwantuschke et al., “GaN-based E-band power amplifier modules,” in Proc. European Microwave Conf., London, 2016.
    7. 488. D. Mueller, U. Lewark, A. Tessmann, A. Leuther, T. Zwick, and I. Kallfass, “Active Single Pole Double Throw Switches for D-Band Applications,” in Proc. IEEE Int. Microwave Symposium, San Francisco, pp. 1–4, 2016.
    8. 489. A. Dyskin, P. Harati, D. Muller, T. Messinger, and I. Kallfass, “A wideband phase detector SiGe HBT MMIC for multi-gigabit synchronous receivers,” GeMiC 2016 - 2016 German Microwave Conference, pp. 157–160, 2016.
    9. 490. S. Rey, I. Kallfass, T. Merkle, and T. Kürner, “Input from the TERAPAN Project to the TG3d Call for Contributions to the Response on the Liaison Statement from ITU-R WP1A. IEEE 802.15 TG3d,” Available: https://mentor.ieee.org/802.15/dcn/16/15-16-0082-01-003d-input-from-the-terapan-project-to-the-tg3d-call-for-contributions-to-the-response-on-the-liaison-statementfrom-itu-r-wp1a.docx, 2016.
    10. 491. I. Kallfass, “All-Electronic 300 GHz Analog Transmit/Receive Frontends for Multi-Gigabit Indoor Wirleless Communication,” Form Nano to Terahertz Seminar, IEMN, Lille, 2016.
    11. 492. J. Weimer and I. Kallfass, “Multi Domain Optimization of Power Electronic Devices,” Seminar Electro thermal analysis for power electronics, Keysight Technologies, 2016.
    12. 493. S. Rey, I. Dan, T. Merkle, A. Tessmann, I. Kallfass, and T. Kürner, “TERAPAN -- Towards a 100 Gbit/s Point-to-Point Link with Electronic Beam Steering Operating at 300 GHz,” IEEE MMTC Comsoc E-Letters, Special Issue on “Multimedia Communications in Terahertz and Wireless Optical Networks”, 2016.
    13. 494. C. Salcines, I. Kallfass, H. Kakitani, and A. Mikata, “Dynamic Characterization of the Input and Reverse Transfer Capacitances in Power MOSFETs under High Current Conduction,” in Proc. Applied Power Electronics Conf. (APEC), Long Beach, 2016.
    14. 495. I. Kallfass, “300 GHz Fixed Wireless Links,” Workshop Millimeter-Wave Technologies for 5G Mobile Networks and Short-Range Communications, 2016.
    15. 496. S. Moench et al., “Single-input GaN gate driver based on depletion-mode logic integrated with a 600 v GaN-on-Si power transistor,” WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, pp. 204–209, 2016.
    16. 497. D. Muller, U. Lewark, A. Tessmann, A. Leuther, T. Zwick, and I. Kallfass, “Active single pole double throw switches for D-Band applications,” IEEE MTT-S International Microwave Symposium Digest, vol. 2016-August, 2016.
    17. 498. P. Harati, A. Tessmann, D. Schwantuschke, R. Henneberger, and I. Kallfass, “E-band transmitter with 29 dBm RF Power for satellite communication,” European Microwave Week 2016: “Microwaves Everywhere”, EuMW 2016 - Conference Proceedings; 46th European Microwave Conference, EuMC 2016, pp. 509–511, 2016.

  12. 2015

    1. 499. A. Dyskin and I. Kallfass, “Source Degeneration as Series-Series Feedback,” in Proc. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Taormina, 2015.
    2. 500. T. Messinger, J. Antes, S. Wagner, A. Leuther, I. Kallfass, “Wideband 200 GHz Injection-Locked Frequency Divide-by-Two MMIC in GaAs mHEMT Technology,” in Proc. IEEE Mediterranean Microwave Symposium, Lecce, pp. 1–4, 2015.
    3. 501. I. Kallfass et al., “MMIC Chipset for 300 GHz Indoor Wireless Communication,” in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, pp. 1–4, 2015.
    4. 502. U. J. Lewark et al., “Ultra-broadband W-band frequency multiplier-by-twelve MMIC,” European Microwave Week 2015:, pp. 5–8, 2015.
    5. 503. S. Monch et al., “Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs,” Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2015-June, pp. 373–376, 2015.
    6. 504. S. Moench et al., “Monolithic integrated quasi-normally-off gate driver and 600 v GaN-on-Si HEMT,” WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, pp. 92–97, 2015.
    7. 505. P. Pahl et al., “A 50 to 146 GHz power amplifier based on magnetic transformers and distributed gain cells,” IEEE Microwave and Wireless Components Letters, vol. 25, Art. no. 9, 2015.
    8. 506. F. Boes et al., “Multi-gigabit E-band wireless data transmission,” 2015 IEEE MTT-S International Microwave Symposium, IMS 2015, 2015.
    9. 507. F. Boes et al., “Performance comparison of raised cosine shaped and rectangular pulsed signals in E-band wireless communication systems,” IEEE Radio and Wireless Symposium, RWS, vol. 2015-June, Art. no. June, 2015.
    10. 508. D. Muller, A. Tessmann, A. Leuther, T. Zwick, and I. Kallfass, “A H-Band vector modulator MMIC for phase-shifting applications,” 2015 IEEE MTT-S International Microwave Symposium, IMS 2015, 2015.
    11. 509. T. Messinger, D. Müller, J. Antes, S. Wagner, A. Tessmann, and I. Kallfass, “Divide-by-8 phase detector MMIC for PLL-based carrier recovery in E-band communication,” 2015 German Microwave Conference, GeMiC 2015, pp. 237–240, 2015.
    12. 510. T. Messinger, J. Antes, S. Wagner, A. Leuther, and I. Kallfass, “Wideband 200 GHz injection-locked frequency divide-by-two MMIC in GaAs mHEMT technology,” Mediterranean Microwave Symposium, vol. 2015-January, 2015.
    13. 511. I. Kallfass et al., “64 Gbit/s Transmission over 850 m Fixed Wireless Link at 240 GHz Carrier Frequency,” Journal of Infrared Millimeter and Terahertz Waves, vol. 36, Art. no. 2, 2015, doi: https://doi.org/10.1007/s10762-014-0140-6.
    14. 512. T. Messinger et al., “Multi-Level 20 Gbit/s PSSS Transmission Using a Linearity-Limited 240 GHz Wireless Frontend,” in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), pp. 1–4, 2015.
    15. 513. T. Messinger, D. Mueller, J. Antes, S. Wagner, A. Tessmann, and I. Kallfass, “Divide-by-8 Phase Detector MMIC for PLL-based Carrier Recovery in E-Band Communication,” in Proc. German Microwave Conference (GeMIC), Erlangen, pp. 237–240, 2015.
    16. 514. S. Mönch et al., “Monolithic Integrated Quasi-Normally-Off Gate Driver and 600 V GaN-on-Si HEMT,” in Proc. 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, pp. 1–6, 2015.
    17. 515. U. J. Lewark et al., “Experimental Validation of Heavy Rain Attenuation in E-Band Based on Climate Wind Tunnel Measurements at 77 GHz,” CEAS Space Journal, vol. 7, Art. no. 4, 2015.
    18. 516. I. Kallfass, “240GHz wireless communication system operating at up to 100 Gbps,” in Proc. IEEE MTT-S Int. Microwave Symp., Phoenix, Workshop Terahertz-wave wireless communications, May 2015.
    19. 517. P. Harati, F. Boes, J. Antes, A. Tessmann, and I. Kallfass, “LO Spur Suppression Effect on Ultra Wideband Transceiver Performance for QPSK Modulation Format,” in Proc. European Microwave Conference, Paris, pp. 250–253, 2015.
    20. 518. I. Kallfass, “MMIC-based wireless communication frontends operating at up to 100 Gbps,” Workshop 100 Gbit/s Wireless Communications at High mm-Wave Frequencies, European Microwave Conf., 2015.
    21. 519. K. KrishneGowda, T. Messinger, A. Wolf, J. Scheytt, I. Kallfass, and R. Kraemer, “Towards 100 Gbps Wireless Communication in THz Band with PSSS Modulation: A Promising Hardware in the Loop Experiment,” in Proc. 15th IEEE Int. Conf. on Ubiquitous Wireless Broadband, pp. 1–4, 2015.
    22. 520. J. Antes and I. Kallfass, “Performance Estimation for Broadband Multi-Gigabit Millimeter-and Sub-Millimeter-Wave Wireless Communication Links,” IEEE Transactions on Microwave Theory and Techniques, vol. 63, Art. no. 10, 2015.
    23. 521. I. Dan et al., “A 300 GHz Multi-Stage Balanced Variable Gain Amplifier With Tandem-X Couplers,” in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, pp. 1–4, 2015.
    24. 522. S. Diebold et al., “A Novel 1x4 Coupler for Compact and High-Gain Power Amplifier MMICs around 250 GHz,” Microwave Theory and Techniques, IEEE Transactions on, vol. 63, Art. no. 3, Mar. 2015, doi: 10.1109/TMTT.2015.2396492.
    25. 523. I. Kallfass, “How to Design Power Electronics - The HF in Power Semiconductor Modeling and Design,” Innovations in EDA Webcast Series, Keysight Technologies, 2015.
    26. 524. F. Boes et al., “Performance Comparison of Raised Cosine Shaped and Rectangular Pulsed Signals in E-Band Communication Systems,” in Proc. Radio Wireless Week (RWW), Tucson, 2015.
    27. 525. I. Kallfass et al., “Towards MMIC-Based 300 GHz Indoor Wireless Communication Systems,” Trans. Institute of Electronics, Information and Communication Engineers IEICE, vol. E98-C, Art. no. 12, 2015, doi: https://doi.org/10.1587/transele.E98.C.1081.
    28. 526. D. Mueller, A. Tessmann, A. Leuther, T. Zwick, and I. Kallfass, “A H-Band Vector Modulator MMIC for Phase-Shifting Applications,” in Proc. IEEE MTT-S Int. Microwave Symp., Phoenix, 2015.
    29. 527. K. Krishnegowda, A. C. Wolf, R. Kraemer, T. Messinger, and I. Kallfass, “Simulation of 100 Gbps using Parallel Sequence Spread Spectrum modulation (PSSS) with 240 GHz radio,” 2015 1st URSI Atlantic Radio Science Conference, URSI AT-RASC 2015, 2015.
    30. 528. D. Müller et al., “D-Band digital phase shifters for phased-array applications,” 2015 German Microwave Conference, GeMiC 2015, pp. 205–208, 2015.
    31. 529. J. Antes et al., “Multi-Gigabit Millimeter-Wave Wireless Communication in Realistic Transmission Environments,” IEEE Transactions on Terahertz Science and Technology, vol. 5, Art. no. 6, 2015.
    32. 530. S. Diebold et al., “A novel 1 ? 4 coupler for compact and high-gain power amplifier MMICs around 250 GHz,” IEEE Transactions on Microwave Theory and Techniques, vol. 63, Art. no. 3, 2015.
    33. 531. T. Kuerner, T. Merkle, and I. Kallfass, “Übertragung von ultrahohen Datenraten mit steuerbaren Antennen bei Terahertz-Frequenzen,” Presseinformationen Forschung, TU Braunschweig, 2015.
    34. 532. D. Mueller et al., “D-Band Digital Phase Shifters for Phased-Array Applications,” in Proc. German Microwave Conference (GeMIC), Erlangen, 2015.

  13. 2014

    1. 533. I. Kallfass, “Next generation of high-speed satellite broadcasting, For the first time 15 gigabit/second over a distance of 15 kilometres,” Press release No. 80, University of Stuttgart, 2014.
    2. 534. U. J. Lewark, A. Tessmann, S. Wagner, A. Leuther, T. Zwick, and I. Kallfass, “A 220 to 320 GHz Broadband Active Frequency Multiplier-by-Eight MMIC,” in Proc. European Microwave Integrated Circuit Conf., Rome, pp. 1–4, 2014.
    3. 535. P. Pahl et al., “Design and Evaluation of Realizable and Compact Low-Impedance Transmission Lines for Two Top Metal Layer Semiconductor Processes,” in Proc. Asia Pacific Microwave Conf., pp. 1–3, 2014.
    4. 536. U. J. Lewark et al., “Active 600GHz Frequency Multiplier-by-Six S-MMICs for Submillimeter-Wave Generation,” in Proc. IEEE Int. Microwave Symposium, Tampa, 2014.
    5. 537. D. Mueller, J. Laengst, A. Tessmann, A. Leuther, T. Zwick, and I. Kallfass, “A D-Band 180 Phase Shifter with very low Amplitude- and Phase-Error,” in Proc. European Microwave Integrated Circuit Conf., Rome, pp. 1–4, 2014.
    6. 538. J. Antes, U. Lewark, A. Tessmann, A. Leuther, S. Wagner, and I. Kallfass, “Ultra-Wideband Single-Balanced Transmitter-MMIC for Future 300 GHz Communication Systems,” in Proc. IEEE Int. Microwave Symposium, Tampa, pp. 1–3, 2014.
    7. 539. J. Leuthold et al., “RF photonic transmission beyond 100 Gbit/s,” Asia Communications and Photonics Conference, ACPC 2014, 2014.
    8. 540. F. Boes et al., “Experimental validation of adverse weather effects on a 240 GHz multi-gigabit wireless link,” IEEE MTT-S International Microwave Symposium Digest, 2014.
    9. 541. D. Muller et al., “A h-band reflective-type phase shifter MMIC for ISM-Band applications,” IEEE MTT-S International Microwave Symposium Digest, 2014.
    10. 542. U. J. Lewark et al., “MMIC-based module-level frequency generation for e-band communication systems,” IEEE Radio and Wireless Symposium, RWS, pp. 85–87, 2014.
    11. 543. D. Lopez-Diaz et al., “Multi-gigabit data transmission at 240 GHz with complex baseband power detection,” European Microwave Week 2014: “Connecting the Future”, EuMW 2014 - Conference Proceedings; EuRAD 2014: 11th European Radar Conference, pp. 364–367, 2014.
    12. 544. J. Antes et al., “Multi-gigabit data transmission using MMIC-based E-band frontends,” IEEE Radio and Wireless Symposium, RWS, pp. 10–12, 2014.
    13. 545. S. Koenig et al., “Wireless sub-THz communication system with high data rate enabled by RF photonics and active MMIC technology,” 2014 IEEE Photonics Conference, IPC 2014, pp. 414–415, 2014.
    14. 546. D. Mueller et al., “A H-Band reflective-type phase shifter MMIC for ISM-Band applications,” in Proc. IEEE Int. Microwave Symposium, Tampa, p. 1, 2014.
    15. 547. S. Diebold et al., “Comparison of Two 325 GHz LNAs using mHEMT with 35 nm Gate-Length in Common-Source and Cascode configuration,” in Proc. Asia Pacific Microwave Conf., pp. 1–3, 2014.
    16. 548. J. Antes et al., “MMIC-based E-Band Frontend for Multi-Gigabit Wireless Links,” in Proc. Radio Wireless Week (RWW), pp. 1–3, 2014.
    17. 549. S. Diebold, E. Weissbrodt, H. Massler, A. Leuther, A. Tessmann, and Kallfass. I., “A W-Band Monolithic Integrated Active Hot and Cold Noise Source,” Microwave Theory and Techniques, IEEE Transactions on, vol. 62, Art. no. 3, Mar. 2014, doi: 10.1109/TMTT.2014.2299770.
    18. 550. D. Schwantusche et al., “Q- and E-band Amplifier MMICs for Satellite Communication,” in Proc. IEEE Int. Microwave Symposium, Tampa, pp. 1–3, 2014.
    19. 551. W. Johannes et al., “Implementation of a 35 \GHz\ \SAR\ sensor and a high resolution camera to enable real-time observation,” in 10th European Conference on Synthetic Aperture Radar (EUSAR 2014), Berlin, Germany, Jun. 2014.
    20. 552. S. Koenig et al., “20 Gbit/s Wireless Bridge at 220 GHz Connecting Two Fiber-Optic Links,” Optical Communications and Networking, IEEE/OSA Journal of, vol. 6, Art. no. 1, Jan. 2014.
    21. 553. T. Merkle et al., “Backside Process Free Broadband Amplifier MMICs at D-Band and H-Band in 20 nm mHEMT Technology,” in Proc. IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), La Jolla, pp. 1–3, 2014.
    22. 554. I. Kallfass et al., “High Linearity Active GaN-HEMT Down-Converter MMIC for E-Band Radar Applications,” in Proc. European Microwave Integrated Circuit Conf., Rome, pp. 1–4, 2014.
    23. 555. W. Freude et al., “Wireless Communications on THz Carriers Takes Shape,” in Proc. 16th Int. Conf. on Transparent Optical Networks, Graz, pp. 1–4, 2014.
    24. 556. S. Diebold, E. Weissbrodt, H. Massler, A. Leuther, A. Tessmann, and I. Kallfass, “A W-band monolithic integrated active hot and cold noise source,” IEEE Transactions on Microwave Theory and Techniques, vol. 62, Art. no. 3, 2014.
    25. 557. A. Dyskin, S. Wagner, D. Ritter, and I. Kallfass, “An active 60-90 GHz single pole double throw switch MMIC,” Journal of Infrared, Millimeter, and Terahertz Waves, vol. 35, Art. no. 4, 2014.
    26. 558. F. Boes et al., “Ultra-Broadband MMIC-Based Wireless Link at 240 GHz Enabled by 64 GS/s DAC,” in Proc. 39th Int. Conf. on Infrared, Millimeter, and Terahertz Waves (IRMMW), Tuscon AZ, pp. 1–4, 2014.
    27. 559. U. J. Lewark et al., “A Miniaturized Unit Cell for Ultra-Broadband Active Millimeter-Wave Frequency Multiplication,” Microwave Theory and Techniques, IEEE Transactions on, vol. 62, Art. no. 6, Jun. 2014, doi: 10.1109/TMTT.2014.2318272.
    28. 560. D. Lopez-Diaz et al., “Multi-Gigabit Data Transmission at 240 GHz with Complex Baseband Power Detection,” in Proc. European Microwave Integrated Circuit Conf., Rome, pp. 1–4, 2014.
    29. 561. T. Merkle et al., “ICs and Modules for Millimeter-Wave Multi-Gigabit Data Links Based on Advanced mHEMT Technology,” Int. Wireless Symposium (IWS), Xi’an, Workshop WS6 High-Speed Link Design: From Devices to Systems, 2014.
    30. 562. D. Schwantuschke et al., “Q- and E-band amplifier MMICs for satellite communication,” IEEE MTT-S International Microwave Symposium Digest, 2014.
    31. 563. J. Antes et al., “Ultra-wideband single-balanced transmitter-MMIC for 300 GHz communication systems,” IEEE MTT-S International Microwave Symposium Digest, 2014.
    32. 564. U. J. Lewark, T. Zwick, A. Tessmann, H. Massler, A. Leuther, and I. Kallfass, “Active 600GHz frequency multiplier-by-Six S-MMICs for submillimeter-wave generation,” IEEE MTT-S International Microwave Symposium Digest, 2014.
    33. 565. W. Johannes et al., “Implementation of a 35 GHz SAR sensor and a high resolution camera to enable real-time observation,” Proceedings of the European Conference on Synthetic Aperture Radar, EUSAR, vol. Proceedings of the European Conference on Synthetic Aperture Radar, EUSAR, pp. 315–318, 2014.
    34. 566. D. Muller, J. Langst, A. Tessmann, A. Leuther, T. Zwick, and I. Kallfass, “A D-Band 180? phase shifter with very low amplitude-and phase-error,” European Microwave Week 2014: “Connecting the Future”, EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference, pp. 174–177, 2014.
    35. 567. K. Krishnegowda, A. Wolf, R. Kraemer, J. C. Scheytt, and I. Kallfass, “Wireless 100 Gb/s: PHY layer overview and challenges in the THz freqency band,” 2014 IEEE 15th Annual IEEE Wireless and Microwave Technology Conference, WAMICON 2014, 2014.
    36. 568. S. Diebold et al., “Low noise amplifier MMICs for 325 GHz radiometric applications,” 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014, pp. 151–153, 2014.
    37. 569. F. Boes, J. Antes, U. Lewark, and I. Kallfass, “Experimental Validation of Adverse Weather Effects on a 240 GHz Multi-Gigabit Wireless Communication Link,” in Proc. IEEE Int. Microwave Symposium, Tampa, pp. 1–3, 2014.

  14. 2013

    1. 570. I. Kallfass, “Active Integrated Circuits in Millimeter-Wave Applications,” in Proc. Microwave Integrated Circuits and Systems, Workshop on RF, analog, millimeterwave integrated circuits and systems, Israel Institute of Technology, Haifa, Israel, 2013.
    2. 571. S. Koenig et al., “Wireless sub-THz communication system with high data rate,” Nature Photonics, vol. 7, Art. no. 12, 2013, doi: https://doi.org/10.1038/nphoton.2013.275.
    3. 572. T. Merkle, S. Koch, A. Leuther, M. Seelmann-Eggebert, and I. Kallfass, “Compact 110-170 GHz Amplifier in 50 nm mHEMT Technology with 25 dB Gain,” in Proc. European Microwave Week, Nuremberg, pp. 1–4, 2013.
    4. 573. S. Diebold et al., “A Broadband Amplifier MMIC with 105 to 140 GHz bandwidth,” in Proc. Asia Pacific Microwave Conf., Seoul, pp. 1–4, 2013.
    5. 574. I. Kallfass, “Prospects and Challenges of Modern Semiconductor Technologies in Power Electronic Applications,” 36. Sitzung des gemeinsamen Leitungsgremiums Rechnergestützter Schaltungs- und Systementwurf (RSS-LG) Fachaussschuß3.5 GI Fachbereich 8 GMM Fachausschuß8.2 ITG, May 2013.
    6. 575. A. Dyskin, N. Peleg, S. Wagner, D. Ritter, and I. Kallfass, “An asymmetrical 60-90 GHz single-pole double throw switch MMIC,” European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013: 8th European Microwave Integrated Circuits Conference, pp. 145–148, 2013.
    7. 576. M. Schlechtweg et al., “Millimeter- and submillimeter-wave monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication,” 2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2013, 2013.
    8. 577. P. Neumaier et al., “Molecular spectroscopy with a compact 557 GHz heterodyne receiver,” International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2013.
    9. 578. H. Gulan et al., “Probe based antenna measurements up to 325 GHz for upcoming millimeter-wave applications,” 2013 International Workshop on Antenna Technology, iWAT 2013, pp. 228–231, 2013.
    10. 579. A. Tessmann et al., “Terahertz monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication,” Asia-Pacific Microwave Conference Proceedings, APMC, pp. 203–205, 2013.
    11. 580. P. Pahl et al., “A 65 - 100 GHz impedance transforming hybrid coupler for a V- /W-band AlGaN/GaN MMIC,” European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013: 8th European Microwave Integrated Circuits Conference, pp. 412–415, 2013.
    12. 581. D. Schwantuschke et al., “A fully scalable compact small-signal modeling approach for 100 nm AlGaN/GaN HEMTs,” European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013: 8th European Microwave Integrated Circuits Conference, pp. 284–287, 2013.
    13. 582. R. Weber et al., “A 67 GHz GaN voltage-controlled oscillator MMIC with high output power,” IEEE Microwave and Wireless Components Letters, vol. 23, Art. no. 7, 2013.
    14. 583. I. Kallfass, “Point-to-Point Communication at 240 GHz with up to 40 Gbit/s Data Rate,” Workshop THz Systems and Components in Communications, Sensing and Imaging, European Microwave Conf., 2013.
    15. 584. U. J. Lewark et al., “A 440 GHz Balanced Active Frequency Multiplier-by-Four SMMIC,” in Proc. European Microwave Week, Nuremberg, pp. 1–4, 2013.
    16. 585. B. Baldischweiler et al., “Characterization of a DC to 40 GHz SPDT switch based on GaAs mHEMT technology at cryogenic temperature,” in Proc. European Microwave Week, Nuremberg, pp. 1–4, 2013.
    17. 586. I. Kallfass, “Multi-Gigabit Transmission Based on All-active 200-280 GHz MMIC Chip Set,” IEEE Radio Wireless Week Symposium, Austin, TX, 2013.
    18. 587. D. Lopez-Diaz et al., “A 240 GHz Quadrature Receiver and Transmitter for Data Transmission up to 40 Gbit/s,” in Proc. European Microwave Week, Nuremberg, pp. 1–4, 2013.
    19. 588. I. Kallfass, “High-Frequency Millimetre-Wave Circuits for Wireless Communications,” Workshop What Are the Roles of Photonics and Electronics in Millimetre-Wave Multigigabit Wireless Communications, European Microwave Conf., 2013.
    20. 589. U. J. Lewark, J. Antes, J. Walheim, J. Timmermann, T. Zwick, and I. Kallfass, “Link budget analysis for future E-band gigabit satellite communication links (71-76 and 81-84 Ghz),” CEAS Space Journal, pp. 1–6, 2013.
    21. 590. S. Koenig et al., “100 Gbit/s Wireless Link with mm-Wave Photonics,” in Proc. OFC, Anaheim, 2013.
    22. 591. F. Thome et al., “Comparison of Two W-Band Low-Noise Amplifier MMICs with Ultra Low Power Consumption Based on 50 nm InGaAs mHEMT Technology,” in Proc. IEEE Int. Microwave Symp., Seattle, pp. 1–3, 2013.
    23. 592. A. Huelsmann et al., “Metamorphic HEMT Based Modules for the LO-Generation of Sub-Millimeter-Wave Space Sensors,” in Proc. 6th International Conference on Recent Advances in Space Technologies (RAST), 2013.
    24. 593. U. J. Lewark, A. Tessmann, A. Leuther, and I. Kallfass, “Signal generation and amplification up to 600 GHz using metamorphic HEMT technology,” in Proc. European Microwave Week, Nuremberg, pp. 1–4, 2013.
    25. 594. S. Diebold et al., “AlGaN/GaN-based HEMT Variable Gain Amplifiers for W-Band Operation,” in Proc. IEEE Int. Microwave Symp., Seattle, pp. 1–4, 2013.
    26. 595. P. Pahl et al., “An Impedance Transforming Branchline Coupler for a 65-100 GHz AlGaN/GaN Amplifier MMIC,” in Proc. European Microwave Week, Nuremberg, pp. 1–4, 2013.
    27. 596. A. Dyskin, S. Wagner, D. Ritter, and I. Kallfass, “An Active 60-90 GHz Single Pole Double Throw Switch MMIC,” Journal of Infrared, Millimeter, and Terahertz Waves, vol. 35, Art. no. 3, 2013.
    28. 597. U. J. Lewark, A. Tessmann, A. Leuther, T. Zwick, O. Ambacher, and I. Kallfass, “Signal generation and amplification up to 600 GHz using metamorphic HEMT technology,” European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013: 8th European Microwave Integrated Circuits Conference, pp. 125–128, 2013.
    29. 598. S. Diebold et al., “AlGaN/GaN-based variable gain amplifiers for W-band operation,” IEEE MTT-S International Microwave Symposium Digest, 2013.
    30. 599. E. Weissbrodt, M. Schlechtweg, O. Ambacher, and I. Kallfass, “W-band active loads and switching front-end MMICs for radiometer calibration,” International Journal of Microwave and Wireless Technologies, vol. 5, Art. no. 3, 2013.
    31. 600. D. Lopez-Diaz et al., “A 240 GHz quadrature receiver and transmitter for data transmission up to 40 Gbit/s,” European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMC 2013: 43rd European Microwave Conference, pp. 1411–1414, 2013.
    32. 601. J. Längst et al., “Balanced medium power amplifier MMICs from 200 to 270 GHz,” International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2013.
    33. 602. J. Antes et al., “Data transmission of an 8-PSK modulated 30 Gbit/s signal using an MMIC-based 240 GHz wireless link,” in Proc. IEEE Int. Microwave Symp., Seattle, pp. 1–4, 2013.
    34. 603. M. Schlechtweg et al., “Metamorphic HEMT Based Terahertz Monolithic Integrated Circuits,” in Proc. Workshop WS4 Recent Advances in MMW, Submmwave and THz MMICs for Novel System Design, International Wireless Symposium (IWS), Beijing, Apr. 2013.
    35. 604. I. Kallfass, J. Antes, U. Lewark, and D. Lopez-Diaz, “MHEMT-Based MMIC Frontends for THz Radar and Communication,” in Proc. Workshop Signal Generation, Amplification, Detection and System Implementation at THz Frequencies, Int. Microwave Symp. IMS and RFIC, Seattle, 2013.
    36. 605. A. Dyskin, S. Wagner, D. Ritter, and I. Kallfass, “Performance comparison for millimeter-wave single-pole double throw switches,” 2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2013, 2013.
    37. 606. U. J. Lewark, A. Tessmann, H. Massler, A. Leuther, T. Zwick, and I. Kallfass, “An active 600 GHz frequency multiplier-by-six S-MMIC,” IEEE MTT-S International Microwave Symposium Digest, 2013.
    38. 607. M. Szymkiewicz et al., “Broadband absorption and emission millimeter-wave spectroscopy between 220 and 325 GHz,” Proceedings of SPIE - The International Society for Optical Engineering, vol. 8726, 2013.
    39. 608. T. Merkle, S. Koch, A. Leuther, M. Seelmann-Eggebert, H. Massler, and I. Kallfass, “Compact 110-170 GHz amplifier in 50 nm mHEMT technology with 25 dB gain,” European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013: 8th European Microwave Integrated Circuits Conference, pp. 129–132, 2013.
    40. 609. B. Baldischweiler et al., “Characterization of a DC to 40 GHz SPDT switch based on GaAs mHEMT technology at cryogenic temperature,” European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013: 8th European Microwave Integrated Circuits Conference, pp. 141–144, 2013.
    41. 610. J. Antes et al., “Transmission of an 8-PSK modulated 30 Gbit/s signal using an MMIC-based 240 GHz wireless link,” IEEE MTT-S International Microwave Symposium Digest, 2013.

  15. 2012

    1. 611. D. Mueller et al., “A D-Band Phase Compensated Variable Gain Amplifier,” in Proc. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Dublin, pp. 1–4, 2012.
    2. 612. U. J. Lewark, A. Tessmann, H. Massler, S. Wagner, A. Leuther, and I. Kallfass, “Active Frequency-Tripler MMICs for 300 GHz Signal Generation,” Int. Journal of Microwave and Wireless Technologies, vol. 4, pp. 259–266, 2012, doi: 10.1017/S1759078712000165.
    3. 613. D. Bruch, M. Seelmann-Eggebert, I. Kallfass, A. Leuther, M. Schlechtweg, and O. Ambacher, “Broadband MMIC Tuners Dedicated to Noise Parameter Measurements at Cryogenic Temperatures,” in Proc. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Dublin, pp. 1–3, 2012.
    4. 614. J. Antes, U. J. Lewark, A. Tessmann, S. Wagner, T. Zwick, and I. Kallfass, “MMIC-based chipset for multi-Gigabit Satellite Links in E-Band,” in Proc. IEEE Int. Conf. on Wireless Information Technology and Systems, Hawaii, pp. 1–4, 2012.
    5. 615. F. Thome, S. Diebold, M. Schlechtweg, A. Leuther, O. Ambacher, and I. Kallfass, “A Tunable 140GHz Analog Phase Shifter With High Linearity Performance,” in Proc. 7th German Microwave Conference, Ilmenau, pp. 1–4, Mar. 2012.
    6. 616. E. Weissbrodt, A. Tessmann, M. Schlechtweg, I. Kallfass, and O. Ambacher, “Active Load Modules for W-Band Radiometer Calibration,” in Proc. IEEE Geoscience and Remote Sensing Society (IGARSS) Symposium, Munich, pp. 1–4, Jul. 2012.
    7. 617. S. Diebold et al., “W-Band MMIC Radar Modules for Remote Detection of Vital Signs,” in Proc. European Microwave Conf., Amsterdam, 2012.
    8. 618. R. Weber et al., “An H-Band Low-Noise Amplifier MMIC in 35 nm Metamorphic HEMT Technology,” in Proc. European Microwave Conf. (EuMC), Amsterdam, pp. 1–4, 2012.
    9. 619. J. Laengst et al., “A Balanced 175-240 GHz Amplifier MMIC using Airbridge Transmission Lines,” in Proc. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Dublin, pp. 1–4, 2012.
    10. 620. M. Schlechtweg et al., “Millimeter-wave monolithic integrated circuits and modules for safety and security applications,” Communications in Computer and Information Science, vol. 318 CCIS, pp. 200–211, 2012.
    11. 621. S. Diebold et al., “A W-band MMIC radar system for remote detection of vital signs,” Journal of Infrared, Millimeter, and Terahertz Waves, vol. 33, Art. no. 12, 2012.
    12. 622. S. Diebold et al., “A 130 to 160 GHz broadband power amplifier with binary power splitting topology,” Asia-Pacific Microwave Conference Proceedings, APMC, pp. 442–444, 2012.
    13. 623. J. Antes et al., “220 GHz wireless data transmission experiments up to 30 Gbit/s,” IEEE MTT-S International Microwave Symposium Digest, 2012.
    14. 624. J. Antes, T. Mahler, T. Zwick, A. Tessmann, O. Ambacher, and I. Kallfass, “Study on data transmission of complex modulated signals using an MMIC-based 220 GHz wireless link,” Conference Proceedings of the International Symposium on Signals, Systems and Electronics, 2012.
    15. 625. D. Schwantuschke et al., “A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs,” International Journal of Microwave and Wireless Technologies, vol. 4, Art. no. 3, 2012.
    16. 626. I. Kallfass, S. Diebold, and E. Weissbrodt, “Radiometrische Kalibrierungseinrichtung mit monolithisch integriertem Mehrfachschalter,” 102011016732, 2012
    17. 627. I. Kallfass, J. Antes, D. Lopez-Diaz, S. Wagner, A. Tessmann, and A. Leuther, “Broadband active integrated circuits for terahertz communication,” 18th European Wireless Conference, EW 2012, 2012.
    18. 628. I. Kallfass, A. Tessmann, H. Massler, S. Wagner, and A. Leuther, “A 480 GHz active frequency multiplier-by-four SMMIC,” IEEE MTT-S International Microwave Symposium Digest, 2012.
    19. 629. D. Bruch et al., “A noise source module for in-situ noise figure measurements from DC to 50 GHz at cryogenic temperatures,” IEEE Microwave and Wireless Components Letters, vol. 22, Art. no. 12, 2012.
    20. 630. S. Diebold, M. Seelmann-Eggebert, H. Gulan, A. Leuther, T. Zwick, and I. Kallfass, “Modelling of transistor feeding structures based on electro-magnetic field simulations,” 2012 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMIC 2012, 2012.
    21. 631. D. Bruch et al., “Broadband MMIC tuners dedicated to noise parameter measurements at cryogenic temperatures,” 2012 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMIC 2012, 2012.
    22. 632. D. Lopez-Diaz et al., “A Subharmonic Chipset for Gigabit Communication around 240 GHz,” in Proc. IEEE MTT-S Int. Microwave Symposium, Montreal, Jun. 2012.
    23. 633. U. Lewark, J. Antes, H. Massler, A. Leuther, and I. Kallfass, “E-Band Active Frequency-Multiplier-By-8 MMIC with \textgreater20 dB Conversion Gain and Excellent Spurious Suppression,” in Proc. IEEE MTT-S Int. Microwave Symposium, Montreal, pp. 1–4, Jun. 2012.
    24. 634. I. Kallfass, J. Antes, D. Lopez-Diaz, A. Tessmann, and A. Leuther, “Broadband Active Integrated Circuits for Terahertz Communication,” invited, in Proc. 18th European Wireless Conference, Poznan, pp. 1–5, 2012.
    25. 635. C. Zech et al., “An Ultra-Broadband Low-Noise Traveling-Wave Amplifier Based on 50nm InGaAs mHEMT Technology,” in Proc. 7th German Microwave Conference, Ilmenau, pp. 1–4, Mar. 2012.
    26. 636. U. J. Lewark and I. Kallfass, “Miniaturized Broadband G-Band Frequency-Doubler MMIC,” in Proc. European Microwave Integrated Circuits Conf., Amsterdam, pp. 1–4, 2012.
    27. 637. J. Antes et al., “A high linearity I/Q Mixer for High Data Rate E-Band Wireless Communication Links,” in Proc. European Microwave Conf., Amsterdam, pp. 1–4, 2012.
    28. 638. I. Kallfass, “Active Integrated Circuits for Terahertz Communication,” CLASTECH Symposium and Exhibition, El Segundo, CA, 2012.
    29. 639. E. Weissbrodt, A. Leuther, M. Schlechtweg, I. Kallfass, and O. Ambacher, “Highly Integrated Switching Calibration Front-End MMIC with Active Loads for W-Band Radiometers,” in Proc. European Microwave Conf., Amsterdam, pp. 1–4, 2012.
    30. 640. A. Dyskin, D. Ritter, and I. Kallfass, “Ultra Wideband Cascaded Low Noise Amplifier Implemented in 100-nm GaAs Metamorphic-HEMT Technology,” in Proc. International Symposium on Signals, Systems and Electronics, Potsdam, pp. 1–4, 2012.
    31. 641. S. Koenig et al., “High-Speed Wireless Bridge at 220 GHz Connecting Two Fiber-Optic Links Each Spanning up to 20 km,” in Proc. Optical Fiber Communication Conference (OFC), 2012.
    32. 642. S. Ayhan et al., “A 96 GHz radar system for respiration and heart rate measurements,” IEEE MTT-S International Microwave Symposium Digest, 2012.
    33. 643. D. Muller et al., “A D-band phase compensated variable gain amplifier,” 2012 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMIC 2012, 2012.
    34. 644. J. Antes et al., “Wireless multi-gigabit data transmission using active MMIC components at 220 GHz,” International Journal of Microwave and Wireless Technologies, vol. 4, Art. no. 3, 2012.
    35. 645. J. Langst et al., “A balanced 150-240 GHz amplifier MMIC using airbridge transmission lines,” 2012 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMIC 2012, 2012.
    36. 646. S. Ayhan, S. Diebold, S. Scherr, T. Zwick, I. Kallfass, and A. Tessmann, “A 96 GHz Radar System for Respiration and Heart Rate Measurements,” in Proc. IEEE MTT-S Int. Microwave Symposium, Montreal, Jun. 2012.
    37. 647. D. Schwantuschke, P. Brückner, R. Quay, M. Mikulla, O. Ambacher, and I. Kallfass, “A 40 to 60 GHz Broadband High-power Amplifier MMIC in 100 nm AlGaN/GaN HEMT Technology,” in Proc. European Microwave Conf., Amsterdam, pp. 1–4, 2012.
    38. 648. U. J. Lewark, A. Tessmann, S. Wagner, A. Leuther, T. Zwick, and I. Kallfass, “255 to 330 GHz active frequency tripler MMIC,” 2012 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMIC 2012, 2012.
    39. 649. J. Antes et al., “MMIC-based chipset for multi-Gigabit satellite links in E-band,” 2012 IEEE International Conference on Wireless Information Technology and Systems, ICWITS 2012, 2012.
    40. 650. V. Radisic, K. M. K. H. Leong, X. Mei, S. Sarkozy, W. Yoshida, and W. R. Deal, “Power Amplification at 0.65 THz Using InP HEMTs,” IEEE Transactions on Microwave Theory and Techniques, vol. 60, Art. no. 3, Mar. 2012, doi: 10.1109/TMTT.2011.2176503.
    41. 651. D. Schwantuschke, P. Bruckner, R. Quay, M. Mikulla, O. Ambacher, and I. Kallfass, “A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology,” European Microwave Week 2012: “Space for Microwaves”, EuMW 2012, Conference Proceedings - 42nd European Microwave Conference, EuMC 2012, pp. 1083–1086, 2012.
    42. 652. U. J. Lewark, A. Tessmann, H. Massler, A. Leuther, and I. Kallfass, “E-band active frequency-multiplier-by-eight MMIC with &gt;20 dB conversion gain and excellent spurious suppression,” IEEE MTT-S International Microwave Symposium Digest, 2012.
    43. 653. S. Diebold et al., “W-band MMIC radar modules for remote detection of vital signs,” European Microwave Week 2012: “Space for Microwaves”, EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012, pp. 195–198, 2012.
    44. 654. D. Schwantuschke, I. Kallfass, R. Quay, and O. Ambacher, “GaN-based millimeter-wave monolithic integrated circuits,” 2012 19th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2012, vol. 1, pp. 97–98, 2012.
    45. 655. U. J. Lewark, H. Massler, A. Tessmann, A. Leuther, and I. Kallfass, “Miniaturized ultra-broadband G-band frequency doubler MMIC,” European Microwave Week 2012: “Space for Microwaves”, EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012, pp. 179–182, 2012.
    46. 656. I. Kallfass, U. Lewark, J. Antes, D. Lopez-Diaz, A. Tessmann, and A. Leuther, “MMIC Chip Sets for Wireless Communication up to 480 GHz,” IEEE802 Pleanry Session, San Diego, Jul. 2012.
    47. 657. J. Antes et al., “220 GHz wireless data transmission experiments up to 30 Gbit/s,” in Proc. IEEE MTT-S Int. Microwave Symposium, Montreal, Jun. 2012.
    48. 658. S. Diebold et al., “A 130 to 160 GHz Broadband Power Amplifier with Binary Power Splitting Structure,” in Proc. Asia Pacific Microwave Conference, Kaohsiung, Taiwan, pp. 1–4, 2012.

  16. 2011

    1. 659. A. Tessmann, H. Massler, U. Lewark, S. Wagner, I. Kallfass, and A. Leuther, “Fully Integrated 300 GHz Receiver S-MMICs in 50 nm Metamorphic HEMT Technology,” in Proc. IEEE Compound Semiconductor IC Symposium (CSICS), Hawaii, 2011.
    2. 660. E. Weissbrodt et al., “W-Band Radiometer System with Switching Front-End for Multi-Load Calibration,” in Proc.IEEE Int. Geoscience and Remote Sensing Symposium, 2011.
    3. 661. P. S. A.-Y. T. V. D. A. H. I. K. A. T. A. L. T. B. J. H. T. P. A. E. H. R. H.-W. H. L. Y. T. J. V. K. Jan Stake Huan Zhao, “Development of a Compact 557 GHz Heterodyne Receiver,” 6th ESA Workshop on Millimetre-Wave Technology and Applications, 4th Global Symposium on Millimeter Waves GSMM2011, Espoo, 2011.
    4. 662. S. Kraus, I. Kallfass, R. E. Makon, R. Driad, M. Moyal, and D. Ritter, “A 10-GS/s multibit delta-sigma analog-to-digital converter in an InP HBT technology,” in 2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2011), Nov. 2011, pp. 1–4. doi: 10.1109/COMCAS.2011.6105929.
    5. 663. S. Kraus, I. Kallfass, R. E. Makon, R. Driad, M. Moyal, and D. Ritter, “A 20-GHz Bipolar Latched Comparator With Improved Sensitivity Implemented in InP HBT Technology,” IEEE Transactions on Microwave Theory and Techniques, vol. 59, Art. no. 3, 2011, doi: 10.1109/TMTT.2011.2104974.
    6. 664. U. J. Lewark, A. Tessmann, H. Massler, A. Leuther, and I. Kallfass, “Active single ended frequency multiplier-by-nine \MMIC\ for millimeter-wave imaging applications,” in Proc. Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), pp. 1–4, 2011, doi: 10.1109/INMMIC.2011.5773324.
    7. 665. J. Antes et al., “MMIC based wireless data transmission of a 12.5 Gbit/s signal using a 220 GHz carrier,” European Microwave Week 2011: “Wave to the Future”, EuMW 2011, Conference Proceedings - 41st European Microwave Conference, EuMC 2011, pp. 238–241, 2011.
    8. 666. E. Weissbrodt et al., “W-band radiometer system with switching front-end for multi-load calibration,” International Geoscience and Remote Sensing Symposium (IGARSS), pp. 3843–3846, 2011.
    9. 667. C. Zech et al., “Active millimeter-wave imaging system for material analysis and object detection,” Proceedings of SPIE - The International Society for Optical Engineering, vol. 8188, 2011.
    10. 668. U. J. Lewark, A. Tessmann, H. Massler, S. Wagner, A. Leuther, and I. Kallfass, “300 GHz active frequency-tripler MMICs,” European Microwave Week 2011: “Wave to the Future”, EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011, pp. 236–239, 2011.
    11. 669. I. Kallfass et al., “W-band direct detection radiometers using metamorphic HEMT technology,” Proceedings of SPIE - The International Society for Optical Engineering, vol. 8022, 2011.
    12. 670. S. Diebold et al., “A fully-scalable coplanar waveguide passive library for millimeter-wave monolithic integrated circuit design,” European Microwave Week 2011: “Wave to the Future”, EuMW 2011, Conference Proceedings - 41st European Microwave Conference, EuMC 2011, pp. 293–296, 2011.
    13. 671. S. Diebold et al., “Design and model studies for solid-state power amplification at 210 GHz,” International Journal of Microwave and Wireless Technologies, vol. 3, Art. no. 3, 2011.
    14. 672. M. Schlechtweg et al., “Millimeter-wave circuits and modules up to 500 GHz based on metamorphic HEMT technology for remote sensing and wireless communication applications,” 2011 IEEE 9th International New Circuits and Systems Conference, NEWCAS 2011, pp. 269–272, 2011.
    15. 673. A. Leuther et al., “20 NM metamorphic HEMT with 660 GHz f <inf>T</inf>,” Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2011.
    16. 674. D. Schwantusche et al., “A 56-65 GHz high-power amplifier MMIC using 100 nm AlGaN/GaN dual-gate HEMTs,” European Microwave Week 2011: “Wave to the Future”, EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011, pp. 656–659, 2011.
    17. 675. I. Kallfass et al., “A Single-Chip 77 GHz Heterodyne Receiver MMIC in 100 nm AlGaN/GaN HEMT Technology,” in Proc. IEEE Int. Microwave Symposium, Baltimore, 2011.
    18. 676. E. Weissbrodt, A. Kallfass, I. andTessmann, H. Massler, A. Leuther, M. Schlechtweg, and O. Ambacher, “A Broadband Low-Noise D-Band Amplifier Module in 30nm mHEMT Technology,” in Proc. 6th ESA Workshop on Millimetre-Wave Technology and Applications and 4th Global Symposium on Millimeter Waves, 2011.
    19. 677. B. Aja et al., “Cryogenic Low-Noise mHEMT-Based MMIC Amplifiers for 4 - 12 GHz Band,” Microwave and Wireless Components Letters, IEEE, vol. 21, Art. no. 11, 2011, doi: 10.1109/LMWC.2011.2167502.
    20. 678. Y. Yan et al., “Monolithically Integrated 200-GHz Double-Slot-Antenna and Resistive-Mixers in a GaAs-mHEMT MMIC Process,” IEEE Trans. on Microwave Theory and Techniques, vol. 59, Art. no. 10, 2011.
    21. 679. I. Kallfass, H. Massler, A. Tessmann, and A. Leuther, “FET-Based Frequency Multiplier S-MMICs up to 440 GHz,” in proc. Progress In Electromagnetics Research Symposium PIERS, Marrakesh, 2011.
    22. 680. I. Kallfass et al., “A Highly Linear 84 GHz Low Noise Amplifier MMIC in AlGaN/GaN HEMT Technology,” in proc. IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Integration Technologies, Barcelona, 2011.
    23. 681. V. Vassilev et al., “Integrated Front-ends up to 200 GHz,” in Proc. IEEE International Microwave Workshop Series on Millimeter Wave Integration Technologies, 2011.
    24. 682. D. Lopez-Diaz et al., “High-performance 60 GHz MMICs for wireless digital communication in 100 nm mHEMT technology,” International Journal of Microwave and Wireless Technologies, vol. FirstView, pp. 1–7, 2011, doi: 10.1017/S1759078711000109.
    25. 683. S. Stanko et al., “SAR with MIRANDA Millimeterwave Radar using Analog and New Digital Approach,” in proc. 8th European Radar Conference (EuRAD), pp. 214–217, 2011.
    26. 684. U. J. Lewark, A. Tessmann, H. Massler, A. Leuther, and I. Kallfass, “A 300 GHz Active Frequency-Tripler MMIC,” in Proc. 6th European Microwave Integrated Circuit Conference, Manchester, pp. 236–239, 2011.
    27. 685. J. Antes et al., “Systemkonzept und Realisierung einer Millimeterwellen-Richtfunkstrecke mit Datenraten über 12,5 Gbit/s,” VDE-ITG-Fachtagung Mobilkommunikation 16, vol. Mobilkommunikation. Technologien und Anwendungen : Vorträge der 16. ITG-Fachtagung, Art. no. ITG-Fachbericht 230, ISBN: 978-3-8007-3352-1, 2011.
    28. 686. M. Abbasi et al., “Single-Chip 220 GHz Active Heterodyne Receiver and Transmitter MMICs with On-Chip Integrated Antenna,” IEEE Trans. Microwave Theory and Techniques, vol. 59, Art. no. 2, 2011.
    29. 687. S. Diebold, H. Massler, S. Wagner, A. Tessmann, A. Leuther, and I. Kallfass, “140 GHz solid-state amplifier with on-chip tunable output matching,” in Proc. Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), pp. 1–4, Apr. 2011.
    30. 688. I. Kallfass, “Berührungslose Bestimmung von Lebenszeichen mit Hilfe von Millimeterwellen-Radar,” VDE-ITG-Fachausschuss 7.2: Funksysteme Funk und Leben: Medizintechnik, Ambient Assisted Living, Karlsruhe, 2011.
    31. 689. I. Kallfass et al., “Balanced Active Frequency Multipliers for W-Band Signal Sources,” in Proc. 6th European Microwave Integrated Circuit Conference, Manchester, pp. 101–104, 2011.
    32. 690. U. Lewark, A. Tessmann, H. Massler, A. Leuther, and I. Kallfass, “Active frequency multiplier-by-nine \MMIC\ for millimeter-wave signal generation,” in Proc. German Microwave Conference (GeMIC), Darmstadt, pp. 1–4, 2011.
    33. 691. R. Weber et al., “A W-Band x12 Frequency Multiplier MMIC in Waveguide Package using Quartz and Rogers Transitions,” in proc. IEEE Compound Semiconductor IC Symposium (CSICS), Hawaii, 2011.
    34. 692. S. Wuensch, D. Bruch, E. Crocoll, A. Leuther, I. Kallfass, and M. Siegel, “Development of Monolithic Microwave Integrated Amplifiers as Readout for Detectors at 4.2 K,” Applied Superconductivity, IEEE Transactions on, vol. 21, Art. no. 3, Jun. 2011, doi: 10.1109/TASC.2010.2084056.
    35. 693. R. Weber et al., “A W-band x12 frequency multiplier MMIC in waveguide package using quartz and ceramic transitions,” Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, 2011.
    36. 694. D. Bruch et al., “A single chip broadband noise source for noise measurements at cryogenic temperatures,” IEEE MTT-S International Microwave Symposium Digest, 2011.
    37. 695. R. Weber, U. Lewark, A. Leuther, and I. Kallfass, “A W-band ? 12 multiplier MMIC with excellent spurious suppression,” IEEE Microwave and Wireless Components Letters, vol. 21, Art. no. 4, 2011.
    38. 696. I. Kallfass et al., “All active MMIC-based wireless communication at 220 GHz,” IEEE Transactions on Terahertz Science and Technology, vol. 1, Art. no. 2, 2011.
    39. 697. I. Kallfass, “Submillimetre MMIC design in state of the art MHEMT technology,” in workhop Proc. Advanced III-V MMIC Design Techniques, European Microwave Conf., Manchester, 2011.
    40. 698. M. Schlechtweg et al., “Millimeter-Wave Circuits and Modules up to 500 GHz Based on Metamorphic HEMT Technology for Remote Sensing and Wireless Communication Applications,” in Proc. 9th IEEE International NEWCAS Conference, Bordeaux, 2011.
    41. 699. A. Tessmann et al., “Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz,” Solid-State Circuits, IEEE Journal of, vol. 46, Art. no. 10, 2011, doi: 10.1109/JSSC.2011.2163212.
    42. 700. J. Antes et al., “System concept and implementation of a mmW wireless link providing data rates up to 25 Gbit/s,” in Proc. 3rd Int. IEEE Conf. on Microwaves, Communications, Antennas and Electronic Systems, COMCAS, Tel Aviv, 2011.
    43. 701. R. Weber and I. Kallfass, “Oszillator mit Ohmsch einstellbarer Schwingfrequenz,” EP2384542B1, 2011
    44. 702. U. Lewark, J. Antes, H. Massler, A. Leuther, and I. Kallfass, “Active Frequency Multiplier MMICs for W-Band Signal Sources in Millimeter-Wave Communication Systems,” in Proc. 12. GMM / ITG-Fachtagung ANALOG, Erlangen, 2011.
    45. 703. A. Leuther et al., “20 nm metamorphic HEMT with 660 GHz ft,” in Proc. Int. Conf. on Indium Phosphide and Related Materials (IPRM), Berlin, 2011.
    46. 704. I. Kallfass et al., “Wireless DVB-C transmission at 220 GHz using active single-chip receive and transmit MMICs,” IEEE MTT-S International Microwave Symposium Digest, 2011.
    47. 705. I. Kallfass et al., “A highly linear 84 GHz low noise amplifier MMIC in AlGaN/GaN HEMT technology,” 2011 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Integration Technologies, IMWS 2011, pp. 144–147, 2011.
    48. 706. S. Stanko et al., “Millimeterwave radar for SAR on UAVs with real-time image display,” International Radar Symposium, IRS 2011 - Proceedings, pp. 507–511, 2011.
    49. 707. I. Kallfass et al., “Wireless DVB-C Transmission at 220 GHz Using Active Single-Chip Receive and Transmit MMICs,” in Proc. IEEE Int. Microwave Symposium, Baltimore, 2011.
    50. 708. R. Weber, U. Lewark, A. Leuther, and I. Kallfass, “A W-Band x12 Multiplier MMIC With Excellent Spurious Suppression,” Microwave and Wireless Components Letters, IEEE, vol. 21, Art. no. 4, Apr. 2011, doi: 10.1109/LMWC.2011.2106486.
    51. 709. D. Schwantusche, C. Haupt, R. Kiefer, M. Mikulla, I. Kallfass, and R. Quay, “A 56-65 GHz High-power Amplifier MMIC using 100 nm AlGaN/GaN Dual-gate HEMTs,” in Proc. European Micrwoave Integrated Circuit Conf., Manchester, pp. 1217–1220, 2011.
    52. 710. I. Kallfass et al., “W-Band Direct Detection Radiometers using Metamorphic HEMT Technology,” in Proc. SPIE Symposium on Optics/Photonics, Orlando, 2011.

  17. 2010

    1. 711. H. Zirath et al., “Integrated circuits up to 220 GHz utilizing GaAs-mHEMT technology,” submitted to IEEE Trans. Microwave Theory and Techn., 2010.
    2. 712. A. Huelsmann et al., “Integrated Circuits beyond 100 GHz for Stand-Off Detection of Concealed Weapons,” in Proc. 5th Security Research Conference, Berlin, pp. 74–77, 2010.
    3. 713. S. Diebold et al., “Determination of Suitable mHEMT Transistor Dimensioning for Power Amplification at 210 GHz by Comprehensive Measurements,” in Proc. 5th European Microwave Integrated Circuit Conf., Paris, pp. 78–81, 2010.
    4. 714. I. Kallfass et al., “MMIC Technology for Spectroscopy Applications,” in Proc. SPIE Millimetre Wave and Terahertz Sensors and Technology III, vol. 7837, pp. 1–11, 2010.
    5. 715. I. Kallfass et al., “A W-Band Active Frequency-Multiplier-by-Six in Waveguide Package,” in Proc. German Microwave Conf., Berlin, pp. 53–56, 2010.
    6. 716. I. Kallfass, A. Tessmann, H. Massler, P. Pahl, and A. Leuther, “An All-Active MMIC-Based Chip Set for a Wideband 260 - 304 GHz Receiver,” in Proc. 5th European Microwave Integrated Circuit Conf., Paris, 2010.
    7. 717. D. Bruch et al., “Broadband MMIC Amplifier for Superconducting Single Photon Detector Readout in a Cryogenic Environment,” in Proc. 9th International Workshop on Low Temperature Electronics (WOLTE), Jun. 2010.
    8. 718. V. Vassilev et al., “MMIC-based receivers for mm-wave radiometry,” IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide, 2010.
    9. 719. D. Lopez-Diaz et al., “Monolithic integrated 210 GHz couplers for balanced mixers and image rejection mixers,” 2010 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2010 - Conference Proceedings, pp. 58–61, 2010.
    10. 720. S. Kraus, R. E. Makon, I. Kallfass, R. Driad, M. Moyal, and D. Ritter, “Sensitivity of a 20-GS/s InP DHBT latched comparator,” Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 115–118, 2010.
    11. 721. S. Kraus et al., “High Linearity 2-Bit Current Steering InP/GaInAs DHBT Digital-to-Analog Converter,” in Proc. 22nd International Conf. on Indium Phosphide and Related Materials, May 2010.
    12. 722. E. Weissbrodt, I. Kallfass, R. Weber, A. Tessmann, H. Massler, and A. Leuther, “Low-noise amplifiers in D-band using 100 nm and 50 nm mHEMT technology,” German Microwave Conference Digest of Papers, GeMIC 2010, pp. 55–58, 2010.
    13. 723. D. Lopez-Diaz et al., “Subharmonically Pumped 210 GHz I/Q Mixers,” in Proc. IEEE Compound Semiconductor IC Symposium, Monterey, 2010.
    14. 724. A. Leuther et al., “Metamorphic HEMT Technology for Submillimter-Wave MMIC Applications,” in Proc. 22nd International Conference on Indium Phosphide and Related Materials, Piscataway, NJ, pp. 425–429, May 2010.
    15. 725. M. A. Qureshi, T. Purtova, I. Kallfass, A. Leuther, T. Feger, and H. Schumacher, “G and V band RF MEMS Switches and SPDT monolithically integrated in a m-HEMT Technology,” in Proc. IEEE Germany Student Conference, Hamburg, Germany, May 2010.
    16. 726. S. Wuensch, D. Bruch, E. Crocoll, I. Kallfass, and M. Siegel, “Development of Monolithic Microwave Integrated Amplifiers as Readout for Detectors at 4.2 K,” in Proc. Applied Superconductivity Conference, Washington D.C., 2010.
    17. 727. I. Kallfass, D. Lopez-Diaz, S. Diebold, J. Antes, A. Tessmann, and A. Leuther, “Active MMIC Technology for 240 GHz Wireless Data Links,” IEEE P802.15 Working Group for Wireless Personal Area Networks, Dallas, available at https://mentor.ieee.org/802.15/documents, 2010.
    18. 728. S. Koch, M. Guthoerl, I. Kallfass, A. Leuther, and S. Saito, “A 120-145 GHz Heterodyne Receiver Chipset Utilizing the 140 GHz Atmospheric Window for Passive Millimeter-Wave Imaging Applications,” Solid-State Circuits, IEEE Journal of, vol. 45, Art. no. 10, 2010, doi: 10.1109/JSSC.2010.2057830.
    19. 729. I. Kallfass et al., “A W-Band Four-to-One Switch MMIC with Integrated Reference Channel in Waveguide Package,” rejected, IEEE Microwave and Guided Wave Letters, 2010.
    20. 730. D. Lopez-Diaz et al., “A balanced resistive 210 GHz mixer with 50 GHz IF bandwidth,” European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings, pp. 190–193, 2010.
    21. 731. V. Vassilev et al., “MMIC-based components for MM-wave instrumentation,” IEEE Microwave and Wireless Components Letters, vol. 20, Art. no. 10, 2010.
    22. 732. V. Radisic et al., “A 50 mW 220 GHz power amplifier module,” in 2010 IEEE MTT-S International Microwave Symposium, May 2010, pp. 45–48. doi: 10.1109/MWSYM.2010.5515248.
    23. 733. A. Tessmann, I. Kallfass, and A. Leuther, “Fraunhofer IAF targets terahertz circuits,” Compound Semiconductor, vol. 16, Art. no. 7, 2010.
    24. 734. A. Leuther et al., “Metamorphic HEMT technology for submillimeter-wave MMIC applications,” Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 425–430, 2010.
    25. 735. V. Vassilev et al., “MMIC-based Receiver Components for MM-wave Radiometry,” in Proc. 35th International Conference on Infrared, Millimeter and THz Waves, Rome, Italy, 2010.
    26. 736. V. Vassilev et al., “MMIC-based Components for MM-wave Instrumentation,” IEEE Microwave and Wireless Components Letters, vol. 20, Art. no. 10, 2010.

  18. 2009

    1. 737. H. Zirath et al., “On the status of Low Noise Millimeterwave MMIC Receivers,” in Proc. Asia Pacific Microwave Conf., Singapore, pp. 1303–1306, 2009.
    2. 738. S. Koch, M. Guthoerl, I. Kallfass, A. Leuther, and S. Saito, “A 140 GHz Heterodyne Receiver Chipset for Passive Millimeter Wave Imaging Applications,” in Proc. IEEE Compound Semiconductor Integrated Circuit Symposium CSICS, 2009.
    3. 739. H. Zirath et al., “Integrated receivers up to 220 GHz utilizing GaAsmHEMT technology,” in Proc. IEEE International Symposium on Radio-Frequency Integration Technology, Singapore, 2009.
    4. 740. I. Kallfass et al., “A 200 GHz Monolithic Integrated Power Amplifier in Metamorphic HEMT Technology,” Microwave and Wireless Components Letters, IEEE, vol. 19, Art. no. 6, Jun. 2009, doi: 10.1109/LMWC.2009.2020042.
    5. 741. S. Koch, I. Kallfass, R. Weber, A. Leuther, M. Schlechtweg, and S. Saito, “A Fully Integrated, Compound Transceiver MIMIC utilizing Six Antenna Ports for 60 GHz Wireless Applications,” in Proc. IEEE Compound Semiconductor Integrated Circuit Symposium CSICS, 2009.
    6. 742. A. Huelsmann et al., “Advanced mHEMT technologies for space applications,” in Proc. 20th International Symposium on Space Terahertz Technology, Charlottesville, Apr. 2009.
    7. 743. I. Kallfass et al., “A 144 GHz power amplifier MMIC with 11 dBm output power, 10 dB associated gain and 10 \% power-added efficiency,” IEEE MTT-S International Microwave Symposium Digest, pp. 429–432, 2009.
    8. 744. A. Leuther et al., “Metamorphic HEMT technology for low-noise applications,” Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 188–191, 2009.
    9. 745. I. Kallfass et al., “A 300 GHz active frequency-doubler and integrated resistive mixer MMIC,” European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009, pp. 200–203, 2009.
    10. 746. M. Abbasi et al., “A Broadband 60-to-120 GHz Single-Chip MMIC Multiplier Chain,” in Proc. IEEE MTT-S International Microwave Symposium, Boston, pp. 441–444, Jun. 2009.
    11. 747. M. Abbasi et al., “Single-Chip Frequency Multiplier Chains for Millimeter-Wave Signal Generation,” IEEE Trans. Microwave Theory and Techniques, vol. 57, Art. no. 12, 2009.
    12. 748. A. Leuther et al., “Metamorphic HEMT Technology for Low-noise Applications,” in Proc. 20th Int. Conf. on Indium Phosphide and Related Materials, 2009.
    13. 749. I. Kallfass, H. Tessmann, A. Leuther, A. Massler, M. Schlechtweg, and O. Ambacher, “Millimeter-Wave Monolithic Integrated Circuits for Imaging and Remote Sensing at 140, 200 and 300 GHz,” SPIE Symposium on Optics/Photonics in Security and Defence, Millimetre Wave and Terahertz Sensors and Technology, Berlin ,Germany, Sep. 2009.
    14. 750. R. Weber, I. Kallfass, M. Seelmann-Eggebert, and A. Leuther, “A Novel Tuning Concept for Wideband VCOs Based on a Shunt-FET,” in Proc. 4th European Microwave Integrated Circuit Conference, Rome, pp. 124–127, 2009.
    15. 751. I. Kallfass, A. Tessmann, H. Massler, A. Leuther, M. Schlechtweg, and O. Ambacher, “A 200 GHz active heterodyne receiver MMIC with low sub-harmonic LO power requirements for imaging frontends,” European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009, pp. 45–48, 2009.
    16. 752. M. Abbasi et al., “Single-chip frequency multiplier chains for millimeter-wave signal generation,” IEEE Transactions on Microwave Theory and Techniques, vol. 57, Art. no. 12, 2009.
    17. 753. S. Chartier et al., “Advanced mHEMT MMICs for 220 GHz High-Resolution Imaging Systems,” physica status solidi C6, Art. no. 6, 2009.
    18. 754. P. Pahl, I. Kallfass, and T. Zwick, “Monolithically integrated power amplification beyond 100GHz - challenges and future,” invited presentation, Int. Microwave and Optoelectronics Conf., Para, Brazil, 2009.
    19. 755. H. Zirath et al., “On the status of low noise millimeterwave MMIC receivers,” APMC 2009 - Asia Pacific Microwave Conference 2009, pp. 1303–1306, 2009.
    20. 756. I. Kallfass, A. Tessmann, A. Leuther, H. Massler, M. Schlechtweg, and O. Ambacher, “Millimeter-wave monolithic integrated circuits for imaging and remote sensing at 140, 200, and 300 GHz,” Proceedings of SPIE - The International Society for Optical Engineering, vol. 7485, 2009.
    21. 757. M. Abbasi et al., “A Broadband 60-to-120 GHz single-chip MMIC multiplier chain,” IEEE MTT-S International Microwave Symposium Digest, pp. 441–444, 2009.
    22. 758. I. Kallfass et al., “The Metamorphic HEMT and Its Applications in Remote Sensing,” in Proc. 5th ESA Workshop on Millimetre Wave Technology and Applications & 31st ESA Antenna Workshop, ESTEC, Noordwijk, May 2009.
    23. 759. S. Koch and I. Kallfass, “Transceiver Structure,” 20090215406, Aug. 2009

  19. 2008

    1. 760. S. Gunnarsson, N. Wadefalk, I. Angelov, H. Zirath, I. Kallfass, and A. Leuther, “A 220 GHz (G-band) Microstrip MMIC Single-Ended Resistive Mixer,” IEEE Microwave and Wireless Component Letters, vol. 18, Art. no. 3, Mar. 2008.
    2. 761. I. Kallfass, H. Massler, A. Leuther, A. Tessmann, and M. Schlechtweg, “A 210 GHz Dual-Gate FET Mixer MMIC with \textgreater2 dB Conversion Gain, High LO-to-RF Isolation, and Low LO-Drive Requirements,” IEEE Microwave and Wireless Components Letters, vol. 18, Art. no. 8, Aug. 2008.
    3. 762. B. M. Motlagh, S. E. Gunnarsson, S. Cherednichenko, H. Zirath, I. Kallfass, and A. Leuther, “Integration of 210-GHz Resistive MMIC Mixers with On-Chip Double-Slot Antenna,” submitted for publication, IEEE Trans. on Microwave Theory and Techniques, 2008.
    4. 763. A. Tessmann, I. Kallfass, A. Leuther, H. Massler, M. Schlechtweg, and O. Ambacher, “Metamorphic MMICs for Operation Beyond 200 GHz,” in Proc. European Microwave Integrated Circuit Conference, 2008. EuMIC 2008., pp. 210–213, 2008, doi: 10.1109/EMICC.2008.4772266.
    5. 764. S. E. Gunnarsson, N. Wadefalk, I. Angelov, H. Zirath, I. Kallfass, and A. Leuther, “A G-band (140-220 GHz) Microstrip MMIC Mixer operated in both Resistive and Drain-Pumped Mode,” in Proc. IEEE Int. Microwave Symposium, Atlanta, Jun. 2008.
    6. 765. I. Kallfass, S. Diebold, H. Massler, S. Koch, M. Seelmann-Eggebert, and A. Leuther, “Multiple-Throw Millimeter-Wave FET Switches for Frequencies from 60 up to 120 GHz,” in Proc. 38th European Microwave Conference, Amsterdam, pp. 1453–1456, Oct. 2008.
    7. 766. A. Tessmann et al., “Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar,” IEEE J. Solid-State Circuits, vol. 43, Art. no. 10, Oct. 2008.
    8. 767. S. E. Gunnarsson et al., “A 220 GHz Single-Chip Receiver MMIC with Integrated Antenna,” IEEE Microwave and Wireless Component Letters, vol. 18, Art. no. 4, Apr. 2008.
    9. 768. I. Kallfass, A. Tessmann, A. Leuther, M. Schlechtweg, and O. Ambacher, “Enabling compact MMIC-based frontends for imaging radar and radiometry at 94 and 210 GHz,” in Proc. SPIE Symposium on Optics/Photonics in Security and Defence, Millimetre Wave and Terahertz Sensors and Technology, Sep. 2008.
    10. 769. S. E. Gunnarsson et al., “MMIC design at G-band (140-220 GHz) including a 220 GHz Single-Chip Receiver MMIC with Integrated Antenna,” in Proc. GHz Symposium, Goeteborg, 2008.
    11. 770. S. Koch, I. Kallfass, A. Leuther, M. Schlechtweg, S. Saito, and M. Uno, “A Four-Antenna Transceiver MIMIC for 60 GHz Wireless Multimedia Applications,” in Proc. 38th European Microwave Conference, Amsterdam, pp. 1529–1532, Oct. 2008.

  20. 2007

    1. 771. I. Kallfass, H. Massler, and A. Leuther, “A 210 GHz, Subharmonically-Pumped Active FET Mixer MMIC for Radar Imaging Applications,” in Proc. IEEE Compound Semiconductor Integrated Circuit Symposium CSICS, Portland, pp. 71–74, 2007.
    2. 772. S. Koch, I. Kallfass, R. Weber, A. Leuther, M. Schlechtweg, and M. Uno, “An Analogue, 4:2 MUX/DEMUX Front-End MIMIC for Wireless 60 GHz Multiple Antenna Transceivers,” in Proc. IEEE MTT-S Int. Microwave Symp., Honolulu, Hawai, pp. 1121–1124, Jun. 2007.
    3. 773. I. Kallfass, H. Massler, A. Tessmann, A. Leuther, M. Schlechtweg, and G. Weimann, “A Broadband Frequency Sixtupler MIMIC for the W-Band with \textgreater7 dBm Output Power and \textgreater6 dB Conversion Gain,” in Proc. IEEE MTT-S Int. Microwave Symp., Honolulu, Hawai, pp. 2169–2172, Jun. 2007.

  21. 2006

    1. 774. I. Kallfass, “Comprehensive Nonlinear Modelling of Dispersive Heterostructure Field Effect Transistors and their MMIC Applications,” Dissertation, University of Ulm, 2006.
    2. 775. M. Schlechtweg, I. Kallfass, A. Tessmann, C. Schwoerer, and A. Leuther, “Millimeter-Wave Frontend Components in Metamorphic HEMT Technology,” in Proc. 1st European Microwave Integrated Circuits Conference, Manchester, pp. 31–34, Sep. 2006.
    3. 776. I. Kallfass, H. Schumacher, and T. J. Brazil, “Multiple Time Constant Modeling of Dispersion Dynamics in Hetero Field-Effect Transistors,” IEEE Trans. on Microwave Theory and Techniques, vol. 54, Art. no. 6, Jun. 2006.
    4. 777. I. Kallfass, H. Schumacher, and T. J. Brazil, “A Unified Approach to Charge-Conservative Capacitance Modelling in HEMTs,” IEEE Microwave and Wireless Components Letters, vol. 16, pp. 678–680, 2006.
    5. 778. I. Kallfass, “Metamorphic and Power RF Transistors and MMICs,” in workshop proceedings European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Manchester, 2006.

  22. 2005

    1. 779. I. Kallfass, H. Schumacher, T. Purtova, A. Brokmeier, and W. Ludwig, “One single travelling-wave MMIC for highly linear broadband mixers and variable gain amplifiers,” in Proc. IEEE MTT-S Int. Microwave Symposium, Long Beach, Jun. 2005.
    2. 780. I. Kallfass, C. Zhang, J. Grünenpütt, C. Teyssandier, and H. Schumacher, “Verification of a Frequency Dispersion Model in the Performance of a GaAs pHEMT Travelling-Wave MMIC,” in Proc. European Gallium Arsenide and other Compound Semiconductors ApplicationSymposium, Paris, pp. 381–384, 2005.

  23. 2004

    1. 781. I. Kallfass, H. Schumacher, and T. J. Brazil, “Modelling of Frequency Dispersion Effects in Hetero Field Effect Transistors,” presented at MOS Modelling and Parameter Extraction Group Meeting, Stuttgart, Germany, May 2004.
    2. 782. T. J. Brazil, I. Kallfass, B. OhAnnaidh, and M. Wren, “Nonlinear Device Modelling of Si CMOS, SiGe HFET and GaAs pHEMT,” presented at IEEE MTT-S Int. Microwave Symp. Workshop, Fort Worth, Jun. 2004.
    3. 783. I. Kallfass et al., “Large Signal Modelling including Low-Frequency Dispersion of N-channel SiGe MODFETs and MMIC Applications,” Solid-State Electronics, vol. 48, Art. no. 8, 2004.
    4. 784. A. Kubovic, A. Denisenko, W. Ebert, M. Kasu, I. Kallfass, and E. Kohn, “Electronic surface barrier characteristics of H-terminated and surface conductive diamond,” Diamond and Related Materials, vol. 13, Art. no. 4, Apr. 2004.
    5. 785. M. Kubovic et al., “Microwave performance evaluation of diamond surface channel FETs,” Diamond and Related Materials, vol. 13, Art. no. 4, Apr. 2004.
    6. 786. M. Kasu et al., “Microwave performance of diamond MESFET,” Japan Society of Applied Physics, vol. 73, Art. no. 3, Mar. 2004.
    7. 787. V. D. Juncu, I. Kallfass, R. Sloan, and J. V. Hatfield, “Behaviour of Logic Gates fabricated on Si/SiGe MODFET Technology,” Electronics Letters, vol. 40, Art. no. 12, Jun. 2004.
    8. 788. I. Kallfass, C. Schick, H. Schumacher, and T. J. Brazil, “A Universal Large-Signal Model for Hetero Field-Effect Transistors,” in Proc. 12th GaAs Symposium, European Microwave Week, Amsterdam, pp. 55–58, 2004.

  24. 2003

    1. 789. P. Abele et al., “32$\backslash$,GHz and 40$\backslash$,GHz bandwidth distributed amplifier MMICs based on N-channel SiGe MODFETs,” in Proc. International Semiconductor Device Research Symposium, Washington D.C., pp. 55–56, 2003.
    2. 790. P. Abele et al., “32$\backslash$,GHz MMIC distributed amplifier based on N-channel SiGe MODFETs,” Electronics Letters, vol. 39, Art. no. 20, 2003.
    3. 791. P. Abele et al., “32 GHz bandwidth distributed amplifier MMICs based on N-channel SiGe MODFETs,” in Proc. International Semiconductor Device Research Symposium, Washington D.C., pp. 55–56, 2003.
    4. 792. I. Kallfass et al., “A SiGe HEMT Mixer IC with Low Conversion Loss,” in Proc. 11th GaAs Symposium, European Microwave Week, Munich, Germany, pp. 513–516, 2003.
    5. 793. P. Abele et al., “32 GHz MMIC distributed amplifier based on N-channel SiGe MODFETs,” Electronics Letters, vol. 39, Art. no. 20, 2003.

  25. 2002

    1. 794. I. Kallfass, M. Zeuner, U. König, H. Schumacher, and T. J. Brazil, “A Model for SiGe MODFETs with Improved Large-Signal Quality and Frequency Range,” in Proc. 10th GaAs Symposium, European Microwave Week, Milano, Italy, 2002.

  26. 2000

    1. 795. A. Pascht, I. Kallfass, R. Obergfell, and M. Berroth, “Variable Gain SiGe HBT Amplifier with Low Noise Figure,” 8th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Glasgow, Scotland, 2000.

  27. 1996

    1. 796. Y. Umeda, T. Enoki, K. Osafune, H. Ito, and Y. Ishii, “High-yield design technologies for InAlAs/InGaAs/InP-HEMT analog-digital ICs,” IEEE Transactions on Microwave Theory and Techniques, vol. 44, Art. no. 12, Dec. 1996, doi: 10.1109/22.554560.

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Dieses Bild zeigt Ingmar Kallfass

Ingmar Kallfass

Prof. Dr.-Ing.

Direktor und Institutsleiter

 

Institut für Robuste Leistungs­halbleiter­systeme

Pfaffenwaldring 47, Stuttgart

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