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2021
- K. Muñoz Barón, K. Sharma, M. Nitzsche, und I. Kallfass, „Online Monitoring of Degradation Sensitive Electrical Parameters in Inverter Operation for SiC-MOSFETs“, in 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), Juni 2021, S. 1235–1241. [Online]. Verfügbar unter: https://doi.org/10.1109/APEC42165.2021.9487142
2020
- K. Sharma u. a., „A Robust Approach for Characterization of Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter“, in 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), New Orleans, USA, 2020, S. 1532–1536. doi: 10.1109/APEC39645.2020.9124609.
- K. Sharma u. a., „Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter“, in CIPS 2020; 11th International Conference on Integrated Power Electronics Systems, Berlin, Germany, 2020, S. 1–6. [Online]. Verfügbar unter: https://ieeexplore.ieee.org/document/9097714
- K. Muñoz Barón, K. Sharma, M. Nitzsche, P. Ziegler, D. Koch, und I. Kallfass, „Characterization of Threshold Voltage for Application-Oriented Power Cycling Conditions for Wide-Bandgap Power Devices“, in International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2020, S. 1344–1350. [Online]. Verfügbar unter: https://ieeexplore.ieee.org/document/9178169
2019
- J. Ruthardt u. a., „Online Junction Temperature Measurement via Internal Gate Resistance Using the High Frequency Gate Signal Injection Method“, in PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2019, S. 1–7.