Position innerhalb des Seitenbaumes

Institut für Robuste Leistungshalbleitersysteme
Institut
Team
Muñoz Barón, Kevin

Kevin Muñoz Barón

Herr M.Sc.

Wissenschaftlicher Mitarbeiter
Institut für Robuste Leistungshalbleitersysteme

Kontakt

+49 711 685 69570
+49 711 685 58700
E-Mail
Visitenkarte (VCF)

Pfaffenwaldring 47
70569 Stuttgart
Deutschland
Raum: 1.175

Sprechstunde

flexibel nach vorheriger Anmeldung

Fachgebiet

Zuverlässigkeit & Robustheit

Publikationen

2023
1. M. C. J. Weiser, K. M. Baron, T. Fink, und I. Kallfass, „A Fast ON-State Drain-to-Source Voltage Amplifier for the Dynamic Characterization of GaN Power Transistors“, Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, Bd. 2023-March, S. 637–644, 2023.
  - BibTeX
  BibTeX
  @article{Muñoz2023, author = {Weiser, M.C.J. and Baron, K.M. and Fink, T. and Kallfass, I.}, journal = {Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC}, pages = {637-644}, title = {A Fast ON-State Drain-to-Source Voltage Amplifier for the Dynamic Characterization of GaN Power Transistors}, volume = {2023-March}, year = 2023 }
2. D. Koch, V. Polezhaev, A. B. Sharma, K. M. Baron, T. Huesgen, und I. Kallfass, „Application-Oriented Characterization of Thermally Optimized, Asymmetrical Single Chip Packages for 100 V GaN HEMTs“, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, Bd. 2023-May, S. 48–51, 2023.
  - BibTeX
  BibTeX
  @article{Muñoz2023, author = {Koch, D. and Polezhaev, V. and Sharma, A.B. and Baron, K.M. and Huesgen, T. and Kallfass, I.}, journal = {Proceedings of the International Symposium on Power Semiconductor Devices and ICs}, pages = {48-51}, title = {Application-Oriented Characterization of Thermally Optimized, Asymmetrical Single Chip Packages for 100 V GaN HEMTs}, volume = {2023-May}, year = 2023 }
3. K. M. Baron, M. C. J. Weiser, K. Sharma, und I. Kallfass, „Analysis of a Transistor-Based On-State Voltage Measurement Circuit for Condition Monitoring of Power Transistors“, Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, Bd. 2023-March, S. 2556–2562, 2023.
  - BibTeX
  BibTeX
  @article{Muñoz2023, author = {Baron, K.M. and Weiser, M.C.J. and Sharma, K. and Kallfass, I.}, journal = {Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC}, pages = {2556-2562}, title = {Analysis of a Transistor-Based On-State Voltage Measurement Circuit for Condition Monitoring of Power Transistors}, volume = {2023-March}, year = 2023 }
2022
1. K. Sharma, S. Kamm, K. M. Baron, und I. Kallfass, „Characterization of Online Junction Temperature of the SiC power MOSFET by Combination of Four TSEPs using Neural Network“, 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe, 2022.
  - BibTeX
  BibTeX
  @article{Muñoz2022, author = {Sharma, K. and Kamm, S. and Baron, K.M. and Kallfass, I.}, journal = {24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe}, title = {Characterization of Online Junction Temperature of the SiC power MOSFET by Combination of Four TSEPs using Neural Network}, year = 2022 }
2. K. Sharma, J. Hückelheim, K. M. Barón, J. Ruthardt, und I. Kallfass, „Comparison of Different Methods for the Characterization of Online Junction Temperature of a Gallium-Nitride Power Transistor“, ETG-Fachbericht, Bd. 2022-March, Nr. 165, Art. Nr. 165, 2022.
  - BibTeX
  BibTeX
  @article{Muñoz2022, author = {Sharma, K. and H{\"u}ckelheim, J. and Bar{\'o}n, K.M. and Ruthardt, J. and Kallfass, I.}, journal = {ETG-Fachbericht}, number = 165, pages = {308-312}, title = {Comparison of Different Methods for the Characterization of Online Junction Temperature of a Gallium-Nitride Power Transistor}, volume = {2022-March}, year = 2022 }
2021
1. K. Sharma, S. Kamm, V. Afanasenko, K. M. Baron, und I. Kallfass, „Non-Destructive Failure Analysis of Power Devices via Time- Domain Reflectometry“, IEEE International Conference on Automation Science and Engineering, Bd. 2021-August, S. 423–428, 2021.
  - BibTeX
  BibTeX
  @article{Muñoz2021, author = {Sharma, K. and Kamm, S. and Afanasenko, V. and Baron, K.M. and Kallfass, I.}, journal = {IEEE International Conference on Automation Science and Engineering}, pages = {423-428}, title = {Non-Destructive Failure Analysis of Power Devices via Time- Domain Reflectometry}, volume = {2021-August}, year = 2021 }
2. K. Sharma, K. M. Baron, J. Ruthardt, und I. Kallfass, „Online Junction Temperature Monitoring of Wide Bandgap Power Transistors using Quasi Turn-on Delay as TSEP“, 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings, S. 129–134, 2021.
  - BibTeX
  BibTeX
  @article{Muñoz2021, author = {Sharma, K. and Baron, K.M. and Ruthardt, J. and Kallfass, I.}, journal = {2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings}, pages = {129-134}, title = {Online Junction Temperature Monitoring of Wide Bandgap Power Transistors using Quasi Turn-on Delay as TSEP}, year = 2021 }
3. M. Nitzsche, P. Ziegler, A. Michelberger, K. M. Baron, J. Ruthardt, und J. Roth-Stielow, „Dynamic Thermal Design of an Active Power Cycling Test Bench for SiC MOSFETs“, 2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe, 2021.
  - BibTeX
  BibTeX
  @article{Muñoz2021, author = {Nitzsche, M. and Ziegler, P. and Michelberger, A. and Baron, K.M. and Ruthardt, J. and Roth-Stielow, J.}, journal = {2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe}, title = {Dynamic Thermal Design of an Active Power Cycling Test Bench for SiC MOSFETs}, year = 2021 }
4. K. Muñoz Barón, K. Sharma, M. Nitzsche, und I. Kallfass, „Online Monitoring of Degradation Sensitive Electrical Parameters in Inverter Operation for SiC-MOSFETs“, in 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), in 2021 IEEE Applied Power Electronics Conference and Exposition (APEC). Juni 2021, S. 1235–1241. [Online]. Verfügbar unter: https://doi.org/10.1109/APEC42165.2021.9487142
  Zusammenfassung
  A measurement setup for health and wear-out monitoring via electrical parameters is implemented in a test bench to allow online parameter observation during inverter operation for silicon carbide MOSFETs. A variety of electrical parameters are known to change during operation and over the lifetime of power semiconductor devices and can be an indicator of impending end of life. The observed parameters in this work are drain-source voltage as an indicator of bond-wire fatigue, gate current, indicating degradation in the gate oxide and threshold voltage, which is known to drift in silicon carbide power devices. Due to the isolated measurement design, high-side acquisition of electrical parameters is possible as well. Measurements in a buck-converter configuration are carried out, showing high stability in the output of the implemented acquisition circuits with an update rate of 200 samples per second. This approach has a strong significance in the development of novel power cycling test stands which combine switching losses with conduction losses.
  BibTeX
  @inproceedings{9487142, abstract = {A measurement setup for health and wear-out monitoring via electrical parameters is implemented in a test bench to allow online parameter observation during inverter operation for silicon carbide MOSFETs. A variety of electrical parameters are known to change during operation and over the lifetime of power semiconductor devices and can be an indicator of impending end of life. The observed parameters in this work are drain-source voltage as an indicator of bond-wire fatigue, gate current, indicating degradation in the gate oxide and threshold voltage, which is known to drift in silicon carbide power devices. Due to the isolated measurement design, high-side acquisition of electrical parameters is possible as well. Measurements in a buck-converter configuration are carried out, showing high stability in the output of the implemented acquisition circuits with an update rate of 200 samples per second. This approach has a strong significance in the development of novel power cycling test stands which combine switching losses with conduction losses.}, author = {Muñoz Barón, Kevin and Sharma, Kanuj and Nitzsche, Maximilian and Kallfass, Ingmar}, booktitle = {2021 IEEE Applied Power Electronics Conference and Exposition (APEC)}, issn = {2470-6647}, month = {06}, pages = {1235-1241}, title = {Online Monitoring of Degradation Sensitive Electrical Parameters in Inverter Operation for SiC-MOSFETs}, url = {https://doi.org/10.1109/APEC42165.2021.9487142}, year = 2021 }
  Link
  https://doi.org/10.1109/APEC42165.2021.9487142
5. K. M. Barón, K. Sharma, M. Nitzsche, und I. Kallfass, „Online health monitoring in power modules for inverter topologies using isolated parameter acquisition“, 2021 IEEE Design Methodologies Conference, DMC 2021, 2021.
  - BibTeX
  BibTeX
  @article{Muñoz2021, author = {Bar{\'o}n, K.M. and Sharma, K. and Nitzsche, M. and Kallfass, I.}, journal = {2021 IEEE Design Methodologies Conference, DMC 2021}, title = {Online health monitoring in power modules for inverter topologies using isolated parameter acquisition}, year = 2021 }
6. K. M. Baron, K. Sharma, M. Nitzsche, und I. Kallfass, „Accounting for Acquisition Circuit Temperature in Accurate Online Junction Temperature Estimation“, 2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe, 2021.
  - BibTeX
  BibTeX
  @article{Muñoz2021, author = {Baron, K.M. and Sharma, K. and Nitzsche, M. and Kallfass, I.}, journal = {2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe}, title = {Accounting for Acquisition Circuit Temperature in Accurate Online Junction Temperature Estimation}, year = 2021 }
7. K. M. Baron, K. Sharma, M. Nitzsche, und I. Kallfass, „Characterization of Electrical Parameters for Health Monitoring in SiC MOSFETs during AC Power Cycling“, 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings, S. 316–321, 2021.
  - BibTeX
  BibTeX
  @article{Muñoz2021, author = {Baron, K.M. and Sharma, K. and Nitzsche, M. and Kallfass, I.}, journal = {2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings}, pages = {316-321}, title = {Characterization of Electrical Parameters for Health Monitoring in SiC MOSFETs during AC Power Cycling}, year = 2021 }
2020
1. K. Sharma u. a., „Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter“, in CIPS 2020; 11th International Conference on Integrated Power Electronics Systems, in CIPS 2020; 11th International Conference on Integrated Power Electronics Systems. Berlin, Germany, März 2020, S. 1–6. [Online]. Verfügbar unter: https://ieeexplore.ieee.org/document/9097714
  Zusammenfassung
  This paper presents a robust and easy-to-implement approach to measure the junction temperature of SiC power devices using quasi-threshold voltage as temperature sensitive electrical parameter with adjustable temperature sensitivity. The voltage drop across the parasitic inductance between Kelvin and power source is used to trigger the data acquisition circuit. The novelty of the proposed method lies in the concept of variable temperature sensitivity where the robustness decreases with the increase in the sensitivity. This concept proposes a trade-off between temperature sensitivity and robustness. A D flip-flop is used to make the acquisition circuit more robust to prevent false triggering while keeping fast switching speed and low noise susceptibility. Basic simulations, static and dynamic measurements are performed successfully on a commercially available 1.2 kV/120 A power module in a buck converter topology. The effect of DC-link voltage and load current invariance is also verified in this paper.
  BibTeX
  @inproceedings{9097714, abstract = {This paper presents a robust and easy-to-implement approach to measure the junction temperature of SiC power devices using quasi-threshold voltage as temperature sensitive electrical parameter with adjustable temperature sensitivity. The voltage drop across the parasitic inductance between Kelvin and power source is used to trigger the data acquisition circuit. The novelty of the proposed method lies in the concept of variable temperature sensitivity where the robustness decreases with the increase in the sensitivity. This concept proposes a trade-off between temperature sensitivity and robustness. A D flip-flop is used to make the acquisition circuit more robust to prevent false triggering while keeping fast switching speed and low noise susceptibility. Basic simulations, static and dynamic measurements are performed successfully on a commercially available 1.2 kV/120 A power module in a buck converter topology. The effect of DC-link voltage and load current invariance is also verified in this paper.}, address = {Berlin, Germany}, author = {Sharma, Kanuj and Muñoz Barón, Kevin and Ruthardt, Johannes and Hueckelheim, Jan and Koch, Dominik and Muenzenmayer, Florian and Kallfass, Ingmar}, booktitle = {CIPS 2020; 11th International Conference on Integrated Power Electronics Systems}, eventdate = {24.-26. March 2020}, month = {03}, pages = {1-6}, title = {Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter}, url = {https://ieeexplore.ieee.org/document/9097714}, year = 2020 }
  Link
  https://ieeexplore.ieee.org/document/9097714
2. K. Sharma u. a., „A Robust Approach for Characterization of Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter“, in 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), in 2020 IEEE Applied Power Electronics Conference and Exposition (APEC). New Orleans, USA, März 2020, S. 1532–1536. doi: 10.1109/APEC39645.2020.9124609.
  Zusammenfassung
  This paper presents a robust and easy-to-implement approach to measure junction temperature of SiC power devices using quasi-threshold voltage as temperature sensitive electrical parameter with adjustable temperature sensitivity. Static and dynamic measurements were performed and compared on a commercially available 1.2 kV/120 A SiC power module. The voltage drop across the parasitic inductor is used as the trigger for the data acquisition circuit. A robust approach by using a D-flip-flop for latching in data acquisition circuit while keeping fast turn-on behavior and low noise susceptibility in consideration with the option of variable sensitivity has been successfully implemented and presented.
  BibTeX
  @inproceedings{9124609, abstract = {This paper presents a robust and easy-to-implement approach to measure junction temperature of SiC power devices using quasi-threshold voltage as temperature sensitive electrical parameter with adjustable temperature sensitivity. Static and dynamic measurements were performed and compared on a commercially available 1.2 kV/120 A SiC power module. The voltage drop across the parasitic inductor is used as the trigger for the data acquisition circuit. A robust approach by using a D-flip-flop for latching in data acquisition circuit while keeping fast turn-on behavior and low noise susceptibility in consideration with the option of variable sensitivity has been successfully implemented and presented.}, address = {New Orleans, USA}, author = {Sharma, Kanuj and Dayanand, Deepak and Muñoz Barón, Kevin and Ruthardt, Johannes and Münzenmayer, Florian and Hückelheim, Jan and Kallfass, Ingmar}, booktitle = {2020 IEEE Applied Power Electronics Conference and Exposition (APEC)}, doi = {10.1109/APEC39645.2020.9124609}, eventdate = {15-19. March 2020}, issn = {2470-6647}, language = {English}, month = {03}, pages = {1532-1536}, title = {A Robust Approach for Characterization of Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter}, url = {https://ieeexplore.ieee.org/document/9124609/}, year = 2020 }
  Link
  https://ieeexplore.ieee.org/document/9124609/
3. K. Sharma u. a., „Characterization of the junction temperature of SiC power devices via quasi-threshold voltage as temperature sensitive electrical parameter“, CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems, S. 386–391, 2020.
  - BibTeX
  BibTeX
  @article{Muñoz2020, author = {Sharma, K. and Bar{\'o}n, K.M. and Ruthardt, J. and H{\"u}ckelheim, J. and Koch, D. and M{\"u}nzenmayer, F. and Kallfass, I.}, journal = {CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems}, pages = {386-391}, title = {Characterization of the junction temperature of SiC power devices via quasi-threshold voltage as temperature sensitive electrical parameter}, year = 2020 }
4. M. Nitzsche, K. M. Barón, P. Ziegler, F. Wagner, und J. Roth-Stielow, „Dynamic AC power cycling with coupled inverters operating under application-oriented conditions“, CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems, S. 576–581, 2020.
  - BibTeX
  BibTeX
  @article{Muñoz2020, author = {Nitzsche, M. and Bar{\'o}n, K.M. and Ziegler, P. and Wagner, F. and Roth-Stielow, J.}, journal = {CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems}, pages = {576-581}, title = {Dynamic AC power cycling with coupled inverters operating under application-oriented conditions}, year = 2020 }
5. K. Muñoz Barón, K. Sharma, M. Nitzsche, P. Ziegler, D. Koch, und I. Kallfass, „Characterization of Threshold Voltage for Application-Oriented Power Cycling Conditions for Wide-Bandgap Power Devices“, in International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, in International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. VDE Verlag, Juli 2020, S. 1344–1350. [Online]. Verfügbar unter: https://ieeexplore.ieee.org/document/9178169
  - BibTeX
  - Link
  BibTeX
  @conference{munozbaron2020characterization, author = {Muñoz Barón, Kevin and Sharma, Kanuj and Nitzsche, Maximilian and Ziegler, Philipp and Koch, Dominik and Kallfass, Ingmar}, day = {7-8}, isbn = {978-3-8007-5245-4}, journal = {International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management}, language = {eng}, month = {07}, pages = {1344-1350}, publisher = {VDE Verlag}, research-areas = {Power Electronics}, title = {Characterization of Threshold Voltage for Application-Oriented Power Cycling Conditions for Wide-Bandgap Power Devices}, url = {https://ieeexplore.ieee.org/document/9178169}, year = 2020 }
  Link
  https://ieeexplore.ieee.org/document/9178169
6. D. Koch u. a., „Static and dynamic characterization of a monolithic integrated temperature sensor in a 600 v gan power ic“, PCIM Europe Conference Proceedings, Bd. 1, S. 896–902, 2020.
  - BibTeX
  BibTeX
  @article{Muñoz2020, author = {Koch, D. and Moench, S. and Reiner, R. and Hueckelheim, J. and Mu{\~n}oz Bar{\'o}n, K. and Waltereit, P. and Kallfass, I.}, journal = {PCIM Europe Conference Proceedings}, pages = {896-902}, title = {Static and dynamic characterization of a monolithic integrated temperature sensor in a 600 v gan power ic}, volume = 1, year = 2020 }
7. K. M. Baron, K. Sharma, M. Nitzsche, P. Ziegler, D. Koch, und I. Kallfass, „Characterization of threshold voltage for application-oriented power cycling conditions for wide-bandgap power devices“, PCIM Europe Conference Proceedings, Bd. 1, S. 1344–1350, 2020.
  - BibTeX
  BibTeX
  @article{Muñoz2020, author = {Baron, K.M. and Sharma, K. and Nitzsche, M. and Ziegler, P. and Koch, D. and Kallfass, I.}, journal = {PCIM Europe Conference Proceedings}, pages = {1344-1350}, title = {Characterization of threshold voltage for application-oriented power cycling conditions for wide-bandgap power devices}, volume = 1, year = 2020 }
2019
1. J. Ruthardt u. a., „Online Junction Temperature Measurement via Internal Gate Resistance Using the High Frequency Gate Signal Injection Method“, in PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, in PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. VDE Verlag, Mai 2019, S. 1–7.
  - Zusammenfassung
  - BibTeX
  Zusammenfassung
  In many power electronic applications, it is important to monitor the junction temperature of the power semiconductor devices. This enables for example an abnormal temperature protection, lifetime monitoring or junction temperature control. This paper proposes an online junction temperature measurement based on the internal gate resistance as a temperature sensitive electrical parameter. A direct measurement of this resistance is not possible. Therefore, a high frequency signal is injected into the gate circuit to measure the gate circuit's impedance, which includes the temperature sensitive internal gate resistance. This paper focuses on a simple realization of this method.
  BibTeX
  @inproceedings{8767601, abstract = {In many power electronic applications, it is important to monitor the junction temperature of the power semiconductor devices. This enables for example an abnormal temperature protection, lifetime monitoring or junction temperature control. This paper proposes an online junction temperature measurement based on the internal gate resistance as a temperature sensitive electrical parameter. A direct measurement of this resistance is not possible. Therefore, a high frequency signal is injected into the gate circuit to measure the gate circuit's impedance, which includes the temperature sensitive internal gate resistance. This paper focuses on a simple realization of this method.}, author = {Ruthardt, Johannes and Muñoz Barón, Kevin and Marx, Philipp and Sharma, Kanuj and Nitzsche, Maximilian and Fischer, Manuel and Roth-Stielow, Jörg}, booktitle = {PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management}, eventdate = {7. - 9. Mai 2019}, isbn = {978-3-8007-4938-6}, language = {English}, month = {05}, pages = {1-7}, publisher = {VDE Verlag}, title = {Online Junction Temperature Measurement via Internal Gate Resistance Using the High Frequency Gate Signal Injection Method}, year = 2019 }
2. J. Ruthardt u. a., „Online junction temperature measurement via internal gate resistance using the high frequency gate signal injection method“, PCIM Europe Conference Proceedings, S. 900–906, 2019.
  - BibTeX
  BibTeX
  @article{Muñoz2019, author = {Ruthardt, J. and Bar{\'o}n, K.M. and Marx, P. and Sharma, K. and Nitzsche, M. and Fischer, M. and Roth-Stielow, J.}, journal = {PCIM Europe Conference Proceedings}, pages = {900-906}, title = {Online junction temperature measurement via internal gate resistance using the high frequency gate signal injection method}, year = 2019 }

Lehre

Mikroelektronik 1

Offene studentische Arbeiten

Siehe offene studentische Arbeiten

Projektbeteiligung

ORCID

orcid.org/0000-0002-6398-3732

Kevin Muñoz Barón

Kontakt

Sprechstunde

Fachgebiet

Publikationen

2023

BibTeX

BibTeX

BibTeX

2022

BibTeX

BibTeX

2021

BibTeX

BibTeX

BibTeX

Zusammenfassung

BibTeX

Link

BibTeX

BibTeX

BibTeX

2020

Zusammenfassung

BibTeX

Link

Zusammenfassung

BibTeX

Link

BibTeX

BibTeX

BibTeX

Link

BibTeX

BibTeX

2019

Zusammenfassung

BibTeX

BibTeX

Lehre

Offene studentische Arbeiten

Projektbeteiligung

ORCID

So erreichen Sie uns

Zielgruppe

Formalia

Services

Organisation