Manuel Rueß

J. Ruthardt, K. Sharma, T. Schmid, M. Nitzsche, P. Ziegler, and J. Roth-Stielow, “Online Junction Temperature Measurement of Power Semiconductor Devices,” pp. 1351–1355, 2020, [Online]. Available: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9178170

J. Ruthardt et al., “Closed Loop Junction Temperature Control of Power Transistors for Lifetime Extension,” in 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), New Orleans, USA, Mar. 2020, p. 2955. doi: 10.1109/APEC39645.2020.9124000.

K. Muñoz Barón, K. Sharma, M. Nitzsche, P. Ziegler, D. Koch, and I. Kallfass, “Characterization of Threshold Voltage for Application-Oriented Power Cycling Conditions for Wide-Bandgap Power Devices,” in International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, VDE Verlag, Jul. 2020, pp. 1344–1350. [Online]. Available: https://ieeexplore.ieee.org/document/9178169

K. Sharma et al., “A Robust Approach for Characterization of Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter,” in 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), New Orleans, USA, Mar. 2020, pp. 1532–1536. doi: 10.1109/APEC39645.2020.9124609.

K. Sharma et al., “Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter,” in CIPS 2020; 11th International Conference on Integrated Power Electronics Systems, Berlin, Germany, Mar. 2020, pp. 1–6.

J. Ruthardt et al., “Online Junction Temperature Measurement via Internal Gate Resistance Using the High Frequency Gate Signal Injection Method,” in PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, VDE Verlag, May 2019, pp. 1–7.