Dieses Bild zeigt Ingmar Kallfass

Ingmar Kallfass

Herr Prof. Dr.-Ing.

Direktor und Institutsleiter
Institut für Robuste Leistungshalbleitersysteme

Kontakt

+49 711 685 68747
 +49 711 685 58747
Visitenkarte (VCF)

Pfaffenwaldring 47
70569 Stuttgart
Deutschland
Raum: 1.173

  1. I. H. Aoulad, E. G. Carrizales, and I. Kallfass, “Switched Capacitors Flyback Converter,” in Proc. 19 th 2025 International Conference on Compatibility, Power Electronics, and Power Engineering (CPE-POWERENG), May 2025.
  2. M. Weiser, U. Vogel, D. Miller, R. Schnitzler, T. Fink, and I. Kallfass, “Unraveling the Drain-Voltage Dependency of the Dynamic On-State Resistance of GaN-HEMTs,” in Proc. ECCE Europe, Birmingham, 2025.
  3. L. Gebert et al., “A H-Band High-Pass Distributed Amplifier with a Bandwidth of 80 GHz and over 4 % PAE,” in Proc. German Microwave Conference (GeMIC), Dresden, pp. 1–4, 2025.
  4. M. C. J. Weiser, J. Tausk, and I. Kallfass, “On-State Voltage Sensing of Fast-Switching Power Transistors: Evaluation, Challenges and Advanced Design Considerations,” IEEE Transactions on Power Electronics, pp. 1–11, 2025, doi: 10.1109/TPEL.2025.3562955.
  5. M. Weiser, D. Koch, and I. Kallfass, “An Accurate Simulation Model for Silicon Carbide Power Devices Based on BSIM3 Including Thermal Effects and Package Parasitics,” in Proc. PCIM Europe Conference, 2025.
  6. M. J. Neff, B. G. Oezat, Singhal. P., B. Schoch, and I. Kallfass, “Novel 2.5-64 GHz Nonuniform Distributed Power Detector in 130 nm SiGe BiCMOS,” in Proceedings European Microwave Integrated Circuits Conference (EuMIC), Utrecht, 2025.
  7. T. Ufschlag et al., “Gallium-Nitride-Based E-Band Power Detector,” in Proc. German Microwave Conference (GeMIC), Dresden, pp. 1–4, 2025.
  8. S. Haussmann, D. Wrana, L. Samara, T. Zugno, and I. Kallfass, “Towards System-Level Modeling of Broadband Sub-THz Amplifiers for Wireless Communication,” in Proc. IEEE Radio and Wireless Symposium, Jan. 2025.
  9. L. Samara et al., “Sub-THz Power Amplifiers: Measurements, Behavioral Modeling and Predistortion Algorithms,” IEEE Trans. Terahertz Science and Technology, 2025.
  10. M. Bosch, J. Nuzzo, D. Koch, and I. Kallfass, “Coaxial Gate Loop for Fast-Switching GaN Applications,” in Proc. ECCE Europe, Birmingham, 2025.
  11. I. Kallfass, I. Dan, P. Szriftgiser, and G. Ducournau, “High Capacity Terahertz Communication Links Combining Photonic and Electronic Technologies in the Transmit-Receive Frontend,” Symposium on Radio and Optical Networks Convergence - Expectations and Challenges in Practical Applications Symposium on Radio and Optical Networks Convergence - Expectations and Challenges in Practical Applications, Waseda University, Tokio, Feb. 2025.
  12. M. Haitz, C. Salcines, M. Basler, R. Reiner, S. Moench, and I. Kallfass, “A Novel Compact Model Describing Current-Voltage Characteristics of Monolithic Bidirectional GaN Power HEMTs,” in Proc. ECCE Europe, Birmingham, 2025.
  13. R. Schnitzler, T. Fink, D. Koch, D. Halmer, and I. Kallfass, “Parameter Dependent Anaylsis of Gate Switching Instability in SiC MOSFETs,” in Proc. ECCE Europe, Birmingham, 2025.
  14. L. Gebert et al., “A Superheterodyne 300 GHz InGaAs Receiver and Transmitter Chipset for 6G and Beyond Applications,” in Proceedings European Microwave Integrated Circuits Conference (EuMIC), Utrecht, 2025.
  15. B. Schoch et al., “Intermodulation Distortion Analysis in Cascaded D-Band GaN Amplifiers,” in proc. Int. Conf. on Infrared, Millimeter, and Terahertz Waves (IRMMW), Espoo, Finland, pp. 1–4, 2025.
  16. J. N. Wörmann and I. Kallfass, “Effects of Delay on the Hold-In and Pull-In Range of Quadrature and Binary Costas Loops for Ultrawideband Receiver Synchronization,” IEEE Transactions on Microwave Theory and Techniques, pp. 1–14, 2025, doi: 10.1109/TMTT.2025.3568039.
  17. R. Schnitzler, D. Koch, and I. Kallfass, “10 MHz Accelerated Gate-Switching Stress Tests Utilizing In-Situ Degradation Monitoring for SiC MOSFETs,” in Proc. PCIM Europe Conference, 2025.
  18. L. Manoliu et al., “Implementation and characterization of a W-band SatCom ground terminal receiver with 5 GHz reception bandwidth and mechanical beam steering,” CEAS Space Journal, pp. 1–20, 2025, doi: 10.1007/s12567-025-00614-x.
  19. S. Haussmann, F. Euchner, B. Schoch, D. Wrana, A. Tessmann, and I. Kallfass, “Experimental Performance of Wideband OFDM in Electronic Sub-mmW Wireless Communication,” IEEE Journal of Microwaves, 2025.
  20. R. Kragl, K. Oberdieck, K. Spanos, S. Beushausen, and I. Kallfass, “Active Voltage Probe for Direct Measurement of Emitted Noise of Power Semiconductors,” in Proc. IEEE Energy Conversion Conference and Expo (ECCE 2025), 2025.
  21. S. Haussmann, M. Guenter, A. Tessmann, and I. Kallfass, “H-Band Duplexing Filter for Duplex THz Communications,” in Proc. German Microwave Conference (GeMIC), Dresden, pp. 1–4, 2025.
  22. R. Kragl, K. Oberdieck, K. Spanos, S. Beushausen, and I. Kallfass, “Semiconductor-Focused Simulation Environment for Emitted Noise Sensitivity of MOSFET Parameters,” in Proc. International Symposium on ElectroMagnetic Compatibility in Europe (EMC Europe), Paris, 2025.
  23. T. Fink, T. Schmalzried, D. Kuderna-Melgar, R. Schnitzler, D. Koch, and I. Kallfass, “Machine Learning-Based Degradation State Prediction of SiC MOSFETs Aged by Static Power Cycling Tests,” in Proc. ECCE Europe, Birmingham, 2025.
  24. M. Bosch, D. Koch, and I. Kallfass, “Nonlinear Output Capacitance of Bidirectional Gallium Nitride Power Switches,” in Proc. IEEE Applied Power Electronics Conference and Exposition (APEC), Atlanta, Georgia, Mar. 2025.
  25. J. Streit, S. Hadiuzzaman, R. Kragl, K. Oberdieck, M. Riefer, and I. Kallfass, “Online Parameter Identification and Current Balancing for Turn-Off of Paralleled SiC MOSFETs Using an Active Gate Driver,” in Proc. ECCE Europe, Birmingham, 2025.
  26. J. Woermann, B. G. Oezat, M. Scharpf, M. J. Neff, B. Schoch, and I. Kallfass, “A Tunable True Time Delay up to 50 GHz Based on HBT Pairs in Stacked-Common Base Topology with Incorporated Delay Lines,” in Proceedings European Microwave Integrated Circuits Conference (EuMIC), Utrecht, 2025.
  27. T. Ufschlag et al., “Broadband H-Band Power Amplifier with Optimum Intermediate Splitter and Combiner Impedance,” in Proc. IEEE Radio and Wireless Symposium, Jan. 2025.
  28. M. Ruess, D. Koch, and I. Kallfass, “Comparison of Compact Power Amplifier Designs for High Frequency Resonant Wireless Power Transfer Systems at 6.78 MHz Using High-Q Resonators,” in Proc. IEEE Applied Power Electronics Conference and Exposition (APEC), Atlanta, Georgia, Mar. 2025.
  29. B. Schoch, D. Wrana, S. Haussmann, L. John, J. P. Teyssier, and I. Kallfass, “Multi-Waveguide Band Characterization of a 6G Terahertz Frontend,” in Proc. German Microwave Conference (GeMIC), Dresden, pp. 1–4, 2025.
  30. R. Schnitzler, D. Koch, T. Fink, M. Weiser, and I. Kallfass, “A Comprehensive Impact-Evaluation of Gate Switching Instability on Switching Losses in SiC MOSFETs,” IEEE Trans. on Electron Devices, 2025.
  31. A. Reck, D. Koch, and K. I., “Accuracy Comparison of Temperature Sensors for the Thermal Characterization of GaN Transistors,” in Proc. PCIM Europe Conference, 2025.
  32. D. Wrana et al., “Methodology to Accurately Replicate a Non-Planar Thin-Film Microstrip BEOL in 3D EM Simulation,” in Proc. IEEE Radio and Wireless Symposium, San Antonio, TX, Jan. 2024, doi: 10.1109/SHaRC51853.2021.9375827.
  33. T. Kurner et al., “THz Communications and the Demonstration in the ThoR-Backhaul Link,” IEEE Transactions on Terahertz Science and Technology, pp. 1–14, 2024, doi: 10.1109/TTHZ.2024.3415480.
  34. M. Ruess et al., “GaN Half-Bridges on Electrical and Thermal Co-Designed Ceramic Substrates,” Power Electronic Devices and Components (PEDC), Elsevier, 2024.
  35. K. Munoz-Baron, J. Nuzzo, T. Fink, and I. Kallfass, “Application-Oriented Active Power Cycling of SiC MOSFET Power Modules with Multiple TSEP Acquisition,” in Proc. 47th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe and 18th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2024), 2024.
  36. L. Gebert et al., “H-Band Resistive IQ-Mixer with Gate Bias above Threshold Voltage,” in Proc. German Microwave Conference (GeMIC), Duisburg, pp. 1–4, 2024.
  37. M. Moser et al., “Low-Power AlGaN/GaN Pressure Sensors with High Sensitivity,” GaN Marathon, 2024.
  38. S. Haussmann, D. Wrana, A. Tessmann, and I. Kallfass, “Channel Aggregation in THz Communication: Linearity Considerations in Full Electronic System,” in in Proc. 49th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Sep. 2024.
  39. J. Nuzzo, D. Koch, M. Bosch, T. Fink, and I. Kallfass, “Time-Domain Simulation Based Multi-Domain Optimization of Gallium Nitride-Based DC/DC Converters utilizing Spice Models,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Duesseldorf, 2024.
  40. L. Manoliu et al., “Calibration and Measurements of a Highly Directive Antenna for E-band Satellite Communication,” in Proc. German Microwave Conference (GeMIC), Duisburg, pp. 1–4, 2024.
  41. T. Ufschlag et al., “Demonstration of a Drain-Bar-Based Supply Concept for H-Band High Power Amplifiers,” in Proc. German Microwave Conference (GeMIC), Duisburg, pp. 1–4, 2024.
  42. I. Kallfass, “Combined Time and Frequency Domain Wideband Characterisation of Submillimetre-Wave Active Transceivers,” in Asia-Pacific Microwave Conference (APMC2024), Bali, Indonesia, 2024.
  43. L. Gebert et al., “A High-Pass Distributed Amplifier Operating from 215 GHz up to 315 GHz in a 35 nm InGaAs mHEMT Technology,” in Proceedings European Microwave Integrated Circuits Conference (EuMIC), Paris, pp. 1–4, 2024.
  44. D. Wrana, M. Guenter, S. Haussmann, and I. Kallfass, “Compact E-Band SIW Filters Targeting PCB-Based MMIC Hetero-Integration,” in Proc. German Microwave Conference (GeMIC), Duisburg, pp. 1–4, 2024.
  45. R. Schnitzler, D. Koch, and I. Kallfass, “Sub 5 Second Wide-Bandgap Power Device Calorimetric Measurements Utilizing Optical Sensors and Peltier Elements,” in Proc. PCIM Europe Conference, 2024.
  46. M. C. J. Weiser, V. Köhnlein, and I. Kallfass, “A Flexible Setup for Dynamic ON-State Resistance Measurements of GaN HEMTs With One-Factor-At-a-Time Capability,” IEEE Transactions on Power Electronics, pp. 1–10, 2024, doi: 10.1109/TPEL.2024.3376313.
  47. O. Solomakha, V. Afanasenko, and I. Kallfass, “Multidimensional Characterization of Temperature Sensitive Electrical Parameters in SiC MOSFETs using Automation of Measurement Data Analysis,” in Proc. IEEE Design Methodologies Conference (DMC), Grenoble, 2024.
  48. T. Fink, D. Koch, and I. Kallfass, “A SPICE based Multi-Domain Optimization of a Quasi-Resonant Passive Snubber Circuit for GaN-based DC/DC Converter Applications,” in Proc. IEEE Energy Conversion Congress and Expo (ECCE-Europe), 2024.
  49. O. Solomakha, M. Siddhartha, M. Ruess, S. S. Roge, and K. I., “Flexible Control System For Modular One-Phase Interleaved GaN-based Totem Pole PFC Using Real-Time Hardware,” in Proc. PCIM Europe Conference, 2024.
  50. J. Woermann, L. Manoliu, S. Haussmann, M. Krstic, and I. Kallfass, “Real-time Wideband Video Synchronization via an Analog QPSK Costas Loop in a Laboratory Demonstration of an E-Band Satellite Downlink,” in Proc. IEEE Radio and Wireless Symposium, San Antonio, TX, Jan. 2024, doi: 10.1109/SHaRC51853.2021.9375827.
  51. T. Ufschlag et al., “Integrated GaN Power Detector for High Power Millimeter-Wave Applications,” in Proc. IEEE Radio and Wireless Symposium, San Antonio, TX, Jan. 2024, doi: 10.1109/SHaRC51853.2021.9375827.
  52. O. Solomakha, V. Afanasenko, and I. Kallfass, “Multilevel Digital Twin of Power Electronics based on Degradable Wide-Bandgap Semiconductors for State-of-Health Estimation,” in Proc. IEEE Southern Power Electronics Conference (SPEC), 2024.
  53. B. Schoch, D. Wrana, L. John, and I. Kallfass, “Simultaneous Time and Frequency Domain Characterisation of a Superheterodyne Terahertz Communication Frontend,” in Proceedings European Microwave Conference (EuMC), Paris, pp. 1–4, 2024.
  54. T. Ufschlag et al., “High Sensitivity 270-320 GHz InGaAs-Based Power Detector with Temperarure Compensation,” in Proc. European Microwave Integrated Circuits Conference (EuMIC), Paris, pp. 1–4, 2024.
  55. D. Koch, T. Fink, J. Nuzzo, M. Ruess, and I. Kallfass, “Single Gate-Drive GaN Power Electronics Building Block for Scalable and Fast-Switching High-Current Systems,” in Proc. IEEE Energy Conversion Congress and Exposition, (ECCE) Phoenix, Oct. 2024.
  56. R. Schnitzler, E. DosSantosGomes, D. Koch, P. Rasic, and I. Kallfass, “Multidimensional Switching Loss Analysis of Different 1200 V SiC-Power MOSFET Technologies,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Duesseldorf, 2024.
  57. D. Fang et al., “Wireless THz Communications at 250 Gbit/s Using Self-Injection-Locked Kerr Soliton Microcombs as Photonic-Electronic Oscillators at the Transmitter and Receiver,” in 50th European Conference on Optical Communication (ECOC), Sep. 2024.
  58. S. S. Roge, C. M. Hermann, O. Solomakha, and I. Kallfass, “Mission Profile-based Online Remaining Useful Life Estimation of Power MOSFETs for Electric Vehicles using CARLA,” in Proc. IEEE Design Methodologies Conference (DMC), Grenoble, 2024.
  59. K. Munoz-Baron and I. Kallfass, “Machine Learning-Based Sensor Fusion for Junction Temperature Estimation,” in Proc. International Power Electronics and Motion Control Conference, ECCE Asia, Chengdu, 2024.
  60. T. Fink, D. Koch, and I. Kallfass, “Adaptive Dead Time Control Based on a Time-Discrete Extremum Seeking System for GaN HEMTs,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Duesseldorf, 2024.
  61. R. Kragl, K. Oberdieck, K. Spanos, S. Bweushausen, and I. Kallfass, “Analysis of Electromagnetic Emissions of Power Semiconductors: Interaction of Switching Behavior and Noise Emission,” in Proc. IEEE Southern Power Electronics Conference (SPEC), 2024.
  62. M. Moser et al., “VTH-Engineering using Nanostructure Recessing in AlGaN/GaN MISHEMT Devices,” GaN Marathon, 2024.
  63. T. Fink, D. Koch, and I. Kallfass, “Modulation Scheme for Dynamic AC Power Cycling Based on the Opposition Method,” in Proc. IEEE Energy Conversion Congress and Exposition (ECCE), Phoenix, Oct. 2024.
  64. M. Haitz, M. Richter, and I. Kallfass, “Robustness Across Initial Estimates of Optimization Algorithms for Power Semiconductor Model Parameter Extraction,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2024.
  65. M. Ruess, P. Mack, D. Koch, A. Reck, and I. Kallfass, “GaN Half-Bridges on Electrical and Thermal Co-Designed PCB-on-Ceramic Substrates,” GaN Marathon, 2024.
  66. V. Afanasenko and I. Kallfass, “Online Degradation Detection and Estimation of SiC Power MOSFET based on TSEP,” in Proc. International Power Electronics and Motion Control Conference, ECCE Asia, Chengdu, 2024.
  67. M. Weiser and I. Kallfass, “A Parameter Extraction Strategy for the Determination of Parasitics in Four-Terminal Power Devices,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Duesseldorf, 2024.
  68. K. Munoz-Baron, S. S. Dash, D. Koch, and I. Kallfass, “Online Junction Temperature Sensing Using the Voltage Drop Over the Parasitic Source Inductance,” in Proc. PCIM Europe Conference, 2024.
  69. K. Munoz-Baron, S. S. Dash, and I. Kallfass, “A Fast Source to Drain Voltage Measurement in Bridge Topologies Using a Freewheeling Path for Dynamic Power Cycling Tests,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Duesseldorf, 2024.
  70. D. Lindenschmitt, C. Fischer, S. Haussmann, M. Kalter, I. Kallfass, and H. Schotten, “Concepts for Agricultural On-Demand Networks for 6G Based on THz Communication,” in proc. European Wireless, Sep. 2024.
  71. R. Schnitzler, D. Koch, M. Weiser, J. Weimer, and I. Kallfass, “Comparison of Gate-Source-Dependent Soft- and Hard-Switching Losses of Wide-Bandgap Semiconductor Utilizing Electrical and Rapid Heatsinkless Calorimetric Measurements,” in Proc. Applied Power Electronics Conference (APEC), Long Beach, Feb. 2024.
  72. M. Ruess, D. Koch, and I. Kallfass, “Achieving Low Inductance Power Loops on Rigid-Flex Substrates for Efficient MHz Switching in GaN Half-Bridges,” in Proc. IEEE Energy Conversion Congress and Exposition, (ECCE) Phoenix, Oct. 2024.
  73. D. Koch, T. Fink, J. Nuzzo, K. Munoz-Baron, and I. Kallfass, “PCB-Integrated Pickup-Coil for Overcurrent Detection in High-Current, Paralleled GaN HEMTs,” in Proc. Applied Power Electronics Conference (APEC), Long Beach, Feb. 2024.
  74. M. Moser et al., “Low-Power AlGaN/GaN Pressure Sensors for Harsh Environmental Conditions with High Sensitivity,” Power Electronic Devices and Components (PEDC), Elsevier, 2024.
  75. I. Kallfass, B. Schoch, D. Wrana, J. Dunsmore, and J. P. Teyssier, “Combined Time and Frequency Domain Wideband Characterization of THz Transceiver Components,” in Workshop Proceedings European Microwave Week (EuMM), Paris, pp. 1–4, 2024.
  76. J. Woermann, Singhal. P., and I. Kallfass, “An Ultra-Wideband Two-Port Cascode Self-Mixing Mixer in 130 nm SiGe for Use in Incoherent Radar,” in Proceedings European Microwave Integrated Circuits Conference (EuMIC), Paris, pp. 1–4, 2024.
  77. M. Bosch, D. Koch, J. Nuzzo, and I. Kallfass, “Technique for Measuring the Capacitance-Voltage Characteristics of GaN and SiC Bidirectional Power Switches,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Duesseldorf, 2024.
  78. J. Weimer, N. Weimer, J. Nuzzo, and I. Kallfass, “Latent Heat Storage for Fast-Charging, High Power Density Battery Chargers,” IEEE Trans. on Emerging and Selected Topics in Power Electronics, 2023.
  79. W. Johannes, S. Stanko, and I. Kallfass, “Efficient Joint Broadband Radar and Single Carrier Communication System in Frequency Division Multiplexing for High-Range Applications,” in 2023 24th International Radar Symposium (IRS), May 2023, pp. 1–10. doi: 10.23919/IRS57608.2023.10172460.
  80. D. Koch, J. Nuzzo, M. Weiser, and I. Kallfass, “Digital Twin for Gate-Resistor Optimisztion of Parallel, 100 V, 7 m$Ømega$, GaN HEMTs based on Comprehensive Multi-Domain Simulations and Physically-Motivated Transistor Models,” in Proc. IEEE Design Methodologies Conference (DMC), Miami, Sep. 2023.
  81. W. Johannes, S. Stanko, and I. Kallfass, “Time Domain Analysis of Joint Broadband Radar and Single Carrier Communication in Frequency Division Multiplexing,” in 2023 20th European Radar Conference (EuRAD), Sep. 2023, pp. 278–281. doi: 10.23919/EuRAD58043.2023.10289247.
  82. S. Haussmann et al., “Measurement and Analysis of FDM for E-Band Satellite Communication,” in 2023 53rd European Microwave Conference (EuMC), Sep. 2023, pp. 356–359. doi: 10.23919/EuMC58039.2023.10290622.
  83. M. Ruess, D. Koch, and I. Kallfass, “Multi-MHz Auto-Resonant Power Oscillator in a 650 V GaN-on-SOI Technology for Compact Wireless Power Transfer Systems,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2023.
  84. B. Schoch, D. Wrana, L. Manoliu, M. Kuri, A. Tessmann, and I. Kallfass, “E-Band Active Upconverter Module with Tunable LO Feedthrough,” in Proc. IEEE Radio and Wireless Symposium, 2023.
  85. D. Dell, J. Hückelheim, L. Manoliu, and I. Kallfass, “High Frequency Induction Heating of Non-magnetic Metals with 24 VDC for a Terrestrial Antenna,” in 2023 IEEE Wireless Power Technology Conference and Expo (WPTCE), Jun. 2023, pp. 1–6. doi: 10.1109/WPTCE56855.2023.10215855.
  86. A. Chu et al., “LETSCOPE: Lifecycle Extensions Through Software-Defined Predictive Control of Power Electronics,” in IEEE EUROCON 2023 - 20th International Conference on Smart Technologies, Jul. 2023, pp. 665–670. doi: 10.1109/EUROCON56442.2023.10199076.
  87. O. Solomakha, V. Afanasenko, and I. Kallfass, “Online Junction Temperature Estimation of Power Semiconductor Devices using Neural Network and Model-Based Design,” in IEEE EUROCON 2023 - 20th International Conference on Smart Technologies, Jul. 2023, pp. 187–192. doi: 10.1109/EUROCON56442.2023.10198878.
  88. L. Yan, K. Sharma, and I. Kallfass, “A Compact Model Extending the BSIM3 Model for Silicon Carbide Power MOSFETs,” IEEE Transactions on Power Electronics, vol. 38, Art. no. 4, Apr. 2023, doi: 10.1109/TPEL.2022.3232376.
  89. K. Munoz-Baron and I. Kallfass, “Comprehensive Analysis of a Transistor-Based On-State Voltage Measurement Circuit for Online Condition Monitoring of Power Modules,” in Proc. Applied Power Electronics Conferrence (APEC), Orlando, Mar. 2023.
  90. D. Koch and I. Kallfass, “A High Power Density Intelligent GaN DC/DC Power Module with Integrated Sensors for 48/24 V to 12 V, 100 A Applications,” in Proc. Applied Power Electronics Conference (APEC), Orlando, Mar. 2023.
  91. I. Kallfass et al., “A W-Band Transmitter Scientific Cubesat Payload,” in Proc. ESA Space Microwave Week, 2023.
  92. A. Renau et al., “300 GHz super heterodyne link over 645 m with frequency duplexing for point to point backhauls,” in 2023 53rd European Microwave Conference (EuMC), Sep. 2023, pp. 130–133. doi: 10.23919/EuMC58039.2023.10290501.
  93. M. C. J. Weiser, K. M. Barón, T. Fink, and I. Kallfass, “A Fast ON-State Drain-to-Source Voltage Amplifier for the Dynamic Characterization of GaN Power Transistors,” in 2023 IEEE Applied Power Electronics Conference and Exposition (APEC), Mar. 2023, pp. 637–644. doi: 10.1109/APEC43580.2023.10131492.
  94. V. Afanasenko, K. Munoz-Baron, and I. Kallfass, “Hybrid Model of Power MOSFET for Soft Failures Estimation Based on Time Domain Reflectometry and Machine Learning,” in Proc. 11th International Conference on Power Electronics (ICPE 2023-ECCE Asia), Korea, May 2023.
  95. K. Munoz-Baron and I. Kallfass, “Virtual Junction Temperature Estimation during Dynamic Power Cycling Tests,” in Proc. 11th International Conference on Power Electronics (ICPE 2023-ECCE Asia), Korea, May 2023.
  96. D. Wrana, S. Haussmann, B. Schoch, L. John, A. Tessmann, and I. Kallfass, “Effects of Harmonics from Frequency-Multiplicative Carrier Generation in a Superheterodyne 300 GHz Transmit Frontend,” in 2023 53rd European Microwave Conference (EuMC), Sep. 2023, pp. 138–141. doi: 10.23919/EuMC58039.2023.10290717.
  97. I. Kallfass et al., “Instrumentation for the Time and Frequency Domain Characterization of Terahertz Communication Transceivers and their Building Blocks,” in 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023, 2023, pp. 1030–1033. doi: 10.1109/IMS37964.2023.10188006.
  98. J. Weimer, N. Weimer, J. Nuzzo, and I. Kallfass, “Latent Heat Storage for Fast-Charging, High Power Density Battery Chargers,” Applied Thermal Engineering, 2023.
  99. J. Nuzzo, D. Koch, M. Weiser, R. Schnitzler, and I. Kallfass, “Optimized Design of Fast-Switching GaN-based Inverters Utilizing a Digital Prototype in a Standardized Realistic Test Cycle,” in Proc. IEEE Design Methodologies Conference (DMC), Miami, Sep. 2023.
  100. M. Weiser and I. Kallfass, “A Fast On-State Drain-to-Source Voltage Amplifier for the Dynamic Characterization of Fast-Switching Power Transistors,” in Proc. Applied Power Electronics Conference (APEC), Orlando, Mar. 2023.
  101. D. Wrana, S. Haussmann, B. Schoch, L. John, A. Tessmann, and I. Kallfass, “Effects of Spurious Tones from Frequency-Multiplicative Carrier Generation in a Superheterodyne 300 GHz Transmit Frontend,” in Proc. IEEE Radio and Wireless Symposium, 2023.
  102. L. Manoliu, D. Wrana, B. Schoch, S. Haussmann, A. Tessmann, and I. Kallfass, “Frequency and Phase Investigation of the Local Oscillator Offset in a W-Band Satellite Communication Link,” in 2023 53rd European Microwave Conference (EuMC), Sep. 2023, pp. 360–363. doi: 10.23919/EuMC58039.2023.10290372.
  103. D. Koch, V. Polezhaev, A. Sharma, K. Munoz-Baron, T. Huesgen, and I. Kallfass, “Application-Oriented Characterozation of Thermally-Optimized Asymmetricl Single Chip Packages for 100 V GaN HEMTs,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023.
  104. K. Sharma and I. Kallfass, “Verfahren zum Bestimmen einer Temperatur einer Sperrschicht eines Halbleiterschalters, Vorrichtung. METHOD FOR DETERMINING A TEMPERATURE OF A DEPLETION LAYER OF A SEMICONDUCTOR SWITCH, AND DEVICE.,” DE102021206312A1; WO2022268456A1, 2023
  105. A. Gatzastras, C. Volmer, and I. Kallfass, “A Fully-Differential Travelling-Wave Amplifier up to 110 GHz in a 22 nm FD-SOI CMOS Technology,” in 2023 18th European Microwave Integrated Circuits Conference (EuMIC), Sep. 2023, pp. 365–368. doi: 10.23919/EuMIC58042.2023.10288901.
  106. J. Weimer, R. Schnitzler, D. Koch, and I. Kallfass, “Thermal Impedance Calibration for Rapid and Noninvasive Calorimetric Soft-Switching Loss Characterization,” IEEE Transactions on Power Electronics, vol. 38, Art. no. 7, Jul. 2023, doi: 10.1109/TPEL.2023.3267982.
  107. D. Koch et al., “Highly-Integrated, Low-Noise, Dual-Output GaN DC/DC for GaN Solid-State Power Amplifier in Space Applications,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2023.
  108. A. Garcia-Luque, M. Moser, F. J. Mata-Contreras, T. M. Martin-Guerrero, I. Kallfass, and J. N. Burghartz, “On the Design, Development and Modeling of a New Generation of HEMTs for Industrial Purposes,” in Proc. URSI-Spain National Congress, 2023.
  109. O. Solomakha, K. Munoz-Baron, and K. I., “Digital Twin Approach for Accurate Multi-Level Simulation of Wide-Bandgap Power-Semiconductors using Temperature Dependent Parameters,” in Proc. PCIM Europe Conference, 2023.
  110. B. Schoch, D. Wrana, A. Tessmann, and I. Kallfass, “Wideband Cross-Domain Characterization of a W-band Amplifier MMIC,” in 2023 53rd European Microwave Conference (EuMC), Sep. 2023, pp. 770–773. doi: 10.23919/EuMC58039.2023.10290485.
  111. M. Moser et al., “PECVD SiNx passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management,” Power Electronic Devices and Components, vol. 4, p. 100032, 2023.
  112. T. Ufschlag, B. Schoch, and I. Kallfass, “Inherent Gain Interference of a Two-Tone-Test,” in Proc. IEEE Radio and Wireless Symposium, 2023.
  113. J. Weimer, D. Koch, R. Schnitzler, and I. Kallfass, “Thermal Impedance Calibration for Rapid and Non-Invasiv Calorimetric Soft-Switching Loss Characterization,” IEEE Trans. on Power Electronics, 2023.
  114. I. Kallfass et al., “Cubesat Payload for the Exploratory In-Orbit Verification of a 71-76 GHz Satellite Communication Link,” in Proc. Conf. on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, pp. 1–4, 2023.
  115. L. Manoliu et al., “The technology platform of the EIVE CubeSat mission for high throughput downlinks at W-band,” Acta Astronautica, vol. 205, pp. 80–93, 2023.
  116. R. Schnitzler, D. Koch, E. S. Gomes, and I. Kallfass, “Fully Modular, Dynamic SiC and GaN Testbench with Automated Temperature and Gate-Voltage Characterization,” in Proc. IEEE Design Methodologies Conference (DMC), Miami, Sep. 2023.
  117. A. Leitenstorfer et al., “The 2023 terahertz science and technology roadmap,” Journal of Physics D Applied Physics, vol. 56, Art. no. 22, Apr. 2023, doi: 10.1088/1361-6463/acbe4c.
  118. K. M. Barón, M. C. J. Weiser, K. Sharma, and I. Kallfass, “Analysis of a Transistor-Based On-State Voltage Measurement Circuit for Condition Monitoring of Power Transistors,” in 2023 IEEE Applied Power Electronics Conference and Exposition (APEC), Mar. 2023, pp. 2556–2562. doi: 10.1109/APEC43580.2023.10131156.
  119. Y. Chen et al., “Self-Injection-Locked Kerr Soliton Microcombs With Photonic Wire Bonds For Use in Terahertz Communications,” in 2023 Conference on Lasers and Electro-Optics (CLEO), May 2023, pp. 1–2.
  120. K. Sharma, S. Kamm, K. M. Barón, and I. Kallfass, “Characterization of Online Junction Temperature of the SiC power MOSFET by Combination of Four TSEPs using Neural Network,” in 2022 24th European Conference on Power Electronics and Applications (EPE′22 ECCE Europe), Sep. 2022, pp. 1–8.
  121. L. Manoliu et al., “Measurements of Atmospheric Attenuation in an Outdoor Wireless E/W-Band Communication Link,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1–4, 2022.
  122. S. Haussmann, D. Wrana, B. Schoch, A. Tessmann, R. Henneberger, and I. Kallfass, “Polarisation Multiplex in 300 GHz WirelessCommunication Link using Orthomode Transducer,” in Proc. 52nd European Microwave Conference (EuMC), Milano, 2022.
  123. M. Moser et al., “Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates,” in Proc. 17th European Microwave Integrated Circuits Conference (EuMIC), Milano, 2022.
  124. S. Chartier, A. Tessmann, A. Leuther, I. Kallfass, R. Ewald, and P. Piironen, “Remote Sensing and High Data Rate Satellite Communication Based on Metamorphic HEMT Technology,” in Proc. European Microwave Int. Circuits Conf. EuMIC, Milano, 2022.
  125. A. Gatzastras, C. Volmer, and I. Kallfass, “A Differential Travelling-Wave Amplifier in a 22nm FD-SOI CMOS Technology,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1–4, 2022.
  126. K. Sharma, J. Hueckelheim, K. Munoz-Baron, and I. Kallfass, “Comparison of Different Methods for the Characterization of Online Junction Temperature of a Gallium-Nitride Power Transistor,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Berlin, Mar. 2022.
  127. H. Amrouch et al., “Intelligent Methods for Test and Reliability,” in Proc. Design, Automation and Test in Europe Conference (DATE), Mar. 2022.
  128. J. Woermann, S. Ebeling, B. Schoch, A. Tessmann, and I. Kallfass, “Demonstration of a Novel, Incoherent, Self-mixing Radar Principle Applied to a Wideband E-band Frontend,” in Proc. IEEE Int. Microwave Symposium, 2022.
  129. I. Kallfass et al., “RF-Characterisation of AlGaN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates,” GaN Marathon, Venice, 2022.
  130. D. Wrana, Y. Leiba, L. John, B. Schoch, A. Tessmann, and I. Kallfass, “Short-Range Full-Duplex Real-Time Wireless Link for IEEE802.15.3d Applications,” in Proc. IEEE Radio and Wireless Symposium, San Diego, CA, 2022, doi: 10.1109/SHaRC51853.2021.9375827.
  131. S. Kamm, S. Bickelhaupt, K. Sharma, N. Jazdi, I. Kallfass, and M. Weyrich, “Simulation-to-Reality based Transfer Learning for the Failure Analysis of SiC Power Transistors,” in Proc. 27th Int. Conf. on Emerging Technologies and Factory Automation (EFTA), Stuttgart, Sep. 2022.
  132. J. Weimer, D. Koch, M. Nietzsche, J. Haarer, J. Roth-Stielow, and I. Kallfass, “Miniaturization and Thermal Design of a 170 W AC/DC Battery Charger Utilizing GaN Power Devices,” IEEE Open Journal of Power Electronics, vol. 3, pp. 13–25, Dec. 2022, doi: 10.1109/OJPEL.2021.3137093.
  133. A. Garcia-Luque et al., “Frequency-Characterization and Modeling of AlGaN/GaN HEMTs for High-Power Applications,” in Proc. Int. Workshop on Integrated Nonlinear Microwave and Millimetrewave Circuits (INMMIC), 2022.
  134. K. Sharma, S. Kamm, K. Munoz-Baron, and I. Kallfass, “failure analysis of SiC power transistor via time domain reflectometry,” in Proc. CIRP Conference on Intelligent Computation in Manufacturing Engineering - CIRP ICME, Naples, Jul. 2022.
  135. D. Wrana, L. John, B. Schoch, S. Wagner, and I. Kallfass, “Sensitivity Analysis of a 280 -- 312 GHz Superheterodyne Terahertz Link Targeting IEEE802.15.3d Applications,” IEEE Transactions on Terahertz Science and Technology, vol. 12, Art. no. 4, Jul. 2022, doi: 10.1109/TTHZ.2022.3172008.
  136. M. Riefer, J. Winkler, S. Strache, and I. Kallfass, “Single Chip Junction Temperature Measurement for Paralleled SiC MOSFETs,” in Proc. ECCE Conference, 2022.
  137. M. Weiser, M. Ruess, and I. Kallfass, “Design Considerations of Fast On-State Voltage Measurement Circuits,” 23rd European Conference on Power Electronics and Applications (EPE), 2022.
  138. H. Gibson, R. Henneberger, A. Tessmann, I. Kallfass, L. Manoliu, and B. Schoch, “A satellite tracking system at 78GHz using the over-moded TE21 ground-station antenna pattern,” in Proc. 32nd International Symposium on Space Terahertz Technology (ISSTT), 2022.
  139. M. Pradhan, M. Moser, M. Alomari, J. N. Burghartz, and I. Kallfass, “Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure,” in Proc. 52nd European Solid-State Device Research Conference (ESSDERC), Milano, Sep. 2022.
  140. L. Manoliu et al., “Atmospheric Effects on Wideband-Modulated E-band Long-Range Communication Links,” in Proc. Kleinheubacher Tagung, pp. 1–4, 2022.
  141. L. Manoliu et al., “Ultra-High Throughput E/W-Band Downlink CubeSat Mission,” in Proc. 73rd International Astronautical Congress, Paris, France, pp. 1–14, Sep. 2022.
  142. G. Ducournau et al., “300 GHz links testing enabled by Photonics-based THz generation techniques,” French-German Terahertz Conference, La Grande Motte, May 2022.
  143. B. Schoch, F. Wiewel, D. Wrana, L. Manoliu, S. Haussmann, and I. Kallfass, “Performance Optimization of an E-Band Communication Link using Open-Loop Predistortion,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1–4, 2022.
  144. D. Wrana, B. Schoch, A. Tessmann, and I. Kallfass, “Investigation of the Influence of LO Leakage in a Double-Balanced Homodyne E-Band Quadrature Transmitter,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1–4, 2022.
  145. M. Riefer, J. Winkler, S. Strache, and I. Kallfass, “Substrate Integrated Temperature Sensing for Bondless Power Modules,” in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Berlin, Mar. 2022.
  146. J. Weimer, D. Koch, and I. Kallfass, “Compact Half-Bridge Module for a Charger Application Utilizing GaN Power Devices with Integrated Driver,” in. Proc. PCIM Europe, Nuremberg, Germany, May 2022.
  147. W. Johannes, S. Stanko, and I. Kallfass, “Investigation of a RF Frontend at 35 GHz for Joint Broadband-Radar and Communication Applications,” in Proc. German Microwave Conference (GeMIC), Ulm, pp. 1–4, 2022.
  148. K. Sharma et al., “Online Junction Temperature Monitoring of Wide Bandgap power transistors using Quasi Turn-on Delay Time as Temperature Sensitive Electrical Parameter,” in. Proc. ECCE Asia, 2021.
  149. K. Munoz-Baron, J. Hueckelheim, and I. Kallfass, “Accurate online junction temperature estimation using acquisition circuit temperature for on-state voltage measurement,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.
  150. A. Sharma, J. Weimer, D. Koch, I. Kallfass, and T. Huesgen, “Asymmetric Packages for Optimal Performance of GaN-HEMT using PCB Fabrication Technology,” in Proc. PCIM Europe Conference, 2021.
  151. D. Koch, M. Ruess, D. Maier, and I. Kallfass, “Optimization of Self-Oscillating Power Converter Based on GaN-HEMTs for Contactless Energy Transfer,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021.
  152. S. Moench, R. Reiner, P. Waltereit, O. Ambacher, and I. Kallfass, “Capacitive Characteristics of GaN Half-Bridges for Various Si and SOI Substrate Terminations,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.
  153. C. Groetsch, I. Dan, L. John, S. Wagner, and I. Kallfass, “A Compact 281-319 GHz Low-Power Downconverter MMIC for Superheterodyne Communication Receivers,” IEEE Trans. Terahertz Science and Technology, vol. 11, Art. no. 2, Mar. 2021, doi: 10.1109/TTHZ.2020.3038043.
  154. M. C. J. Weiser, J. Hückelheim, and I. Kallfass, “A Novel Approach for the Modeling of the Dynamic ON-State Resistance of GaN-HEMTs,” IEEE Transactions on Electron Devices, vol. 68, Art. no. 9, Sep. 2021, doi: 10.1109/TED.2021.3098498.
  155. R. Loeffler, J. Hueckelheim, D. Koch, and I. Kallfass, “Development of a powerful gate-driver-circuit for high-frequency control of a DC/DC-converter based on gallium nitride transistors,” in Proc. PCIM Europe Conference, 2021.
  156. L. Yan and I. Kallfass, “A Compact Model Adopting the EKV Model for a Silicon Vertical Power MOSFET,” in Proc. Applied Power Electronics Conferrence (APEC), Phoenix, Mar. 2021.
  157. M. Jandt, M. Eberspaecher, and I. Kallfass, “Radar imaging based on multiple incoherent antennas,” SPIE Symposium on Optics/Photonics in Security and Defence, Millimetre Wave and Terahertz Sensors and Technology, 2021.
  158. L. Manoliu, R. Henneberger, A. Tessmann, J. Seidel, M. Eppard, and I. Kallfass, “Impairments of Atmospheric Attenuation on a Wideband E-Band Outdoor Communication Link,” in Proc. European Microwave Conf. EuMIC, London, pp. 1–4, 2021.
  159. K. M. Barón, K. Sharma, M. Nitzsche, and I. Kallfass, “Online Monitoring of Degradation Sensitive Electrical Parameters in Inverter Operation for SiC-MOSFETs,” in 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), Jun. 2021, pp. 1235–1241. doi: 10.1109/APEC42165.2021.9487142.
  160. L. Manoliu, S. Kumari, and I. Kallfass, “Variable-Coded Modulation and Error-Free Transmission Algorithms for an Exploratory In-Orbit Verification of an E-Band (71-76 GHz) Satellite Link,” in 27th Ka and Broadband Communications Conference, Sorrento, 2021.
  161. D. Koch, S. Araujo, J. Weimer, and I. Kallfass, “Design Methodology for Ultra-Compact Rogowski-Coils for Current Sensing in Low-Voltage High-Current GaN Based DC/DC-Converters,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.
  162. L. Manoliu et al., “FPGA-Based Reconfigurable Onboard Digital Signal Processing for an Exploratory In-Orbit Verification of an E/W-Band (71-76 GHz) Satellite Link,” International Conference on Satellite and Space Communications (ICSSC), London, Jun. 2021.
  163. M. T. Koller, L. M. Loidold, L. Manoliu, J. Meier, I. Kallfass, and S. Klinkner, “The EIVE CubeSat - Developing a Satellite Bus for a 71-76 GHz E-Band Transmitter Payload,” 35th Annual Small Satellite Conference, Logan, Utah, Aug. 2021.
  164. D. Wrana, L. John, S. Wagner, and I. Kallfass, “Short Range Wireless Transmisson Using a 295-315-GHz Superheterodyne THz Link Targeting IEEE802.15.3d Applications,” in Proc. European Microwave Conf. EuMIC, London, pp. 1–4, 2021.
  165. M. Basler et al., “GaN Active Diode for Low-Loss Rectification,” in. Proc. 33nd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.
  166. J. Weimer, D. Koch, and I. Kallfass, “Determination of Hard- and Soft-Switching Losses for Wide Bandgap Power Transistors with Noninvasive and Fast Calorimetric Measurements,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.
  167. K. Munoz-Baron and I. Kallfass, “Online Monitoring of Degradation Sensitive Electrical Parameters in Inverter Operation,” in Proc. Applied Power Electronics Conferrence (APEC), Phoenix, Mar. 2021.
  168. K. Sharma, K. Munoz-Baron, J. Ruthardt, and I. Kallfass, “Online Junction Temperature Monitoring of Wide Bandgap Power Transistors using Quasi Turn-on Delay as TSEP,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021.
  169. J. Weimer, D. Koch, and I. Kallfass, “Accuracy Study of Calorimetric Switching Loss Energy Measurements for Wide Bandgap Power Transistors,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.
  170. S. Moench et al., “PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors,” IEEE Transactions on Power Electronics, vol. 36, Art. no. 1, 2021.
  171. I. Kallfass, “300 GHz Fixed Wireless Links,” Terahertz Technologies and Applications Summer School, TU Eindhoven, May 2021.
  172. J. Woermann, A. Dyskin, S. Chartier, and I. Kallfass, “A Passively-Coupled 39 GHz Colpitts Quadrature VCO in SiGe HBT Technology,” in Proc. European Microwave Int. Circuits Conf. EuMIC, London, pp. 1–4, 2021.
  173. A. Gatzastras, H. Massler, A. Leuther, S. Chartier, and I. Kallfass, “Implementation of Slow-Wave Thin-Film Microstrip Transmission Lines in a 35nm InGaAs Technology,” in Proc. European Microwave Int. Circuits Conf. EuMIC, London, pp. 1–4, 2021.
  174. I. Kallfass, “A Cubesat Payload for the In-Orbit Verification of an E/W-Band Satellite Communication Link,” 14th UK, Europe, China Millimeter Waves and Terahertz Technology Workshop (UCMMT), Lancaster, UK, Sep. 2021.
  175. I. Kallfass et al., “Towards the Exploratory In-Orbit Verification of an E/W-Band Satellite,” Int. Wireless Symposium (IWS), Nanjing, May 2021.
  176. D. Koch, A. Sharma, T. Huesgen, and I. Kallfass, “Comparison of thermally optimized SMD packages for 100 V GaN HEMTs in 300 kHz buck converter high current applications,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021.
  177. K. Sharma, S. Kamm, K. Muñoz Barón, and I. Kallfass, “Non-Destructive Failure Analysis of Power Devices via Time-Domain Reflectometry,” in. Proc. CASE, Lille, France, May 2021.
  178. M. Weiser and I. Kallfass, “Extension on ASM HEMT Model with Trapping Effects in GaN Power Devices,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.
  179. G. Ducournau et al., “300 GHz transmission of E/V bands data-flows in the ThoR project,” Workshop European Conference on Antennas and Propagation (EuCAP), 2021.
  180. D. Koch, A. Sharma, J. Weimer, M. Weiser, T. Huesgen, and I. Kallfass, “A 48 V, 300 kHz, High Current DC/DC-Converter Based on Paralleled, Asymmetrical and Thermally Optimized PCB Embedded GaN Packages with Integrated Temperature Sensor,” in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.
  181. J. Weimer and I. Kallfass, “Thermal Topology Optimization for High Power Density Power Electronic Systems in Passively Cooled Housings,” in Proc. IEEE Design Methodologies Conference (DMC), Bath, UK, Jul. 2021.
  182. B. Schoch et al., “E-Band Transmitter with 3W Complex Modulated Signal Output Power Performance,” in Proc. European Microwave Conf. EuMIC, London, pp. 1–4, 2021.
  183. M. Riefer, J. Winkler, S. Strache, and I. Kallfass, “Implementation of current-source Gate Driver with open-loop slope shaping for SiC-MOSFETs,” in Proc. PCIM Europe Conference, 2021.
  184. T. Huesgen, A. Sharma, J. Weimer, D. Koch, and I. Kallfass, “Thermisch und elektrisch optimiertes Leiterplatten-Prepackage für 100V 100A GaN Leistungshalbleiter,” in Proc. MikroSystemTechnik Kongress, Ludwigsburg, Nov. 2021.
  185. D. Koch and I. Kallfass, “Gate Driver Concept for Parallel Operation of Low-Voltage High-Current GaN Power Transistors for Mild-Hybrid Applications,” in Proc. Applied Power Electronics Conference (APEC), Phoenix, Mar. 2021.
  186. L. Manoliu, B. Schoch, M. Koller, J. Wieczorek, S. Klinkner, and I. Kallfass, “High-speed FPGA-Based Payload Computer for an In-Orbit Verification of a 71--76 GHz Satellite Downlink,” 2021 IEEE Space Hardware and Radio Conference (SHaRC), pp. 21–24, Jan. 2021, doi: 10.1109/SHaRC51853.2021.9375827.
  187. C. M. Groetsch, I. Dan, L. John, S. Wagner, and I. Kallfass, “Comparison of active dual-gate and passive mixers for terahertz applications,” IET Circuits, Devices and Systems, vol. 15, Art. no. 4, 2021, doi: https://doi.org/10.1049/cds2.12032.
  188. K. Munoz-Baron, K. Sharma, M. Nietzsche, and I. Kallfass, “Characterization of Electrical Parameters for Health Monitoring in SiC MOSFETs during AC Power Cycling,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021.
  189. B. Schoch, A. Tessmann, A. Leuther, P. Szriftgiser, G. Ducournau, and I. Kallfass, “Two-Tone Intermodulation Performance of a 300 GHz Power Amplifier MMIC,” in Proc. IEEE Radio and Wireless Symposium, 2021.
  190. K. Munoz-Baron and I. Kallfass, “Online Health Monitoring in Power Modules for Inverter Topologies using Isolated Parameter Acquisition,” in Proc. IEEE Design Methodologies Conference (DMC), Bath, UK, Jul. 2021.
  191. J. Weimer, D. Koch, M. Nietzsche, J. Haarer, J. Roth-Stielow, and I. Kallfass, “Miniaturization and Thermal Design of a 170 W AC/DC Battery Charger Utilizing GaN Power Devices,” IEEE Open Journal of Power Electronics, vol. 3, pp. 13–25, Dec. 2021, doi: 10.1109/OJPEL.2021.3137093.
  192. M. Basler et al., “High Power Density DC-DC Converters Using Highly Integrated Monolithic Half-Bridge GaN ICs,” in Proc. PCIM Europe Conference, 2021.
  193. I. Dan et al., “A Superheterodyne Transmit Receive Chipset for Beyond 5G Network Integration,” in Proc. European Microwave Int. Circuits Conf. EuMIC, London, 2021.
  194. D. Dell, J. Weimer, and I. Kallfass, “Additive Manufacturing of 10 W Power Converter with High Power Density,” 23rd European Conference on Power Electronics and Applications (EPE), 2021.
  195. D. Koch, S. Araujo, J. Weimer, and I. Kallfass, “Automated Calorimetric Measurement with a Peltier Element for Switching Loss Characterization,” in Proc. PCIM Europe Conference, 2021.
  196. K. Muñoz Barón, K. Sharma, M. Nietzsche, P. Ziegler, and I. Kallfass, “Threshold voltage instability under application-oriented power cycling conditions for SiC power devices,” in. Proc. PCIM Europe, Nuremberg, Germany, May 2020.
  197. D. Koch, S. Moench, R. Reiner, J. Hueckelheim, K. Munoz-Baron, and I. Waltereit, P.and Kallfass, “Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power IC,” in. Proc. PCIM Europe, Nuremberg, Germany, May 2020.
  198. S. Moench et al., “PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs with On-Package Gate and DC-Link Capacitors,” IEEE Transactions on Power Electronics Letters, 2020.
  199. J. C. Scheytt, D. Wrana, M. Bahmanian, and I. Kallfass, “Ultra-Low Phase Noise Frequency Synthesis for THz Communication Using an Optoelectronic PLL,” in. Porc. 3rd International Workshop on Mobile Terahertz Systems (IWMTS), Essen, Germany, 2020.
  200. E. R. Bammidi and I. Kallfass, “An Analog Costas Loop MMIC in 130 nm SiGe BiCMOS Technology for Receiver Synchronization of QPSK and BPSK Modulated Signals,” in Proc. European Microwave Int. Circuits Conf. EuMIC, Utrecht, pp. 1–4, 2020.

Vorlesungen

Mikroelektronik 1 (B.Sc.)

Robuste Leistungshalbleitersysteme I (M.Sc.)

Robuste Leistungshalbleitersysteme II (M.Sc.)

Microwave Analog Frontend Design - I (M.Sc.)

Microwave Analog Frontend Design - II (M.Sc.)

Seminar Selected Topics on Power and Microwave Electronics (M.Sc.)

Microwave Engineering (M.Sc.)

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