Dieses Bild zeigt Kanuj Sharma

Herr M.Sc.

Kanuj Sharma

Wissenschaftlicher Mitarbeiter
Institut für Robuste Leistungshalbleitersysteme

Kontakt

+49 711 685 - 60833

Pfaffenwaldring 47
70569 Stuttgart
Deutschland
Raum: 1.175

Publications:
  1. 2020

    1. K. Muñoz Barón, K. Sharma, M. Nitzsche, P. Ziegler, D. Koch, und I. Kallfass, „Characterization of Threshold Voltage for Application-Oriented Power Cycling Conditions for Wide-Bandgap Power Devices“, in International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2020, S. 1344–1350. [Online]. Verfügbar unter: https://ieeexplore.ieee.org/document/9178169
    2. J. Ruthardt, K. Sharma, T. Schmid, M. Nitzsche, P. Ziegler, und J. Roth-Stielow, „Online Junction Temperature Measurement of Power Semiconductor Devices“, S. 1351–1355, 2020, [Online]. Verfügbar unter: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9178170
    3. K. Sharma u. a., „A Robust Approach for Characterization of Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter“, in 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), New Orleans, USA, 2020, S. 1532–1536. doi: 10.1109/APEC39645.2020.9124609.
    4. K. Sharma u. a., „Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter“, in CIPS 2020; 11th International Conference on Integrated Power Electronics Systems, Berlin, Germany, 2020, S. 1–6.
    5. J. Ruthardt u. a., „Closed Loop Junction Temperature Control of Power Transistors for Lifetime Extension“, in 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), New Orleans, USA, 2020, S. 2955–2955. doi: 10.1109/APEC39645.2020.9124000.
  2. 2019

    1. J. Ruthardt u. a., „Online Junction Temperature Measurement via Internal Gate Resistance Using the High Frequency Gate Signal Injection Method“, in PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2019, S. 1–7.
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