Herr M.Sc.

Kanuj Sharma

Wissenschaftlicher Mitarbeiter
Institut für Robuste Leistungshalbleitersysteme

Kontakt

+49 711 685 - 60833

Pfaffenwaldring 47
70569 Stuttgart
Deutschland
Raum: 1.175

Publications:
  1. 2020

    1. K. Sharma et al., “A Robust Approach for Characterization of Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter,” in 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), New Orleans, USA, 2020, pp. 1532–1536, doi: 10.1109/APEC39645.2020.9124609.
    2. K. Sharma et al., “Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter,” in CIPS 2020; 11th International Conference on Integrated Power Electronics Systems, Berlin, Germany, 2020, pp. 1–6.
    3. J. Ruthardt et al., “Closed Loop Junction Temperature Control of Power Transistors for Lifetime Extension,” in 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), New Orleans, USA, 2020, pp. 2955–2955, doi: 10.1109/APEC39645.2020.9124000.
  2. 2019

    1. J. Ruthardt et al., “Online Junction Temperature Measurement via Internal Gate Resistance Using the High Frequency Gate Signal Injection Method,” in PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2019, pp. 1–7.
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