Dieses Bild zeigt Kanuj Sharma

Kanuj Sharma

Herr M.Sc.

Wissenschaftlicher Mitarbeiter
Institut für Robuste Leistungshalbleitersysteme

Kontakt

Deutschland

Publications:

  1. 2020

    1. J. Ruthardt, K. Sharma, T. Schmid, M. Nitzsche, P. Ziegler, und J. Roth-Stielow, „Online Junction Temperature Measurement of Power Semiconductor Devices“, S. 1351–1355, 2020, [Online]. Verfügbar unter: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9178170
    2. J. Ruthardt u. a., „Closed Loop Junction Temperature Control of Power Transistors for Lifetime Extension“, in 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), in 2020 IEEE Applied Power Electronics Conference and Exposition (APEC). New Orleans, USA, März 2020, S. 2955–2955. doi: 10.1109/APEC39645.2020.9124000.
    3. K. Muñoz Barón, K. Sharma, M. Nitzsche, P. Ziegler, D. Koch, und I. Kallfass, „Characterization of Threshold Voltage for Application-Oriented Power Cycling Conditions for Wide-Bandgap Power Devices“, in International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, in International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. VDE Verlag, Juli 2020, S. 1344–1350. [Online]. Verfügbar unter: https://ieeexplore.ieee.org/document/9178169
    4. K. Sharma u. a., „A Robust Approach for Characterization of Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter“, in 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), in 2020 IEEE Applied Power Electronics Conference and Exposition (APEC). New Orleans, USA, März 2020, S. 1532–1536. doi: 10.1109/APEC39645.2020.9124609.
    5. K. Sharma u. a., „Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter“, in CIPS 2020; 11th International Conference on Integrated Power Electronics Systems, in CIPS 2020; 11th International Conference on Integrated Power Electronics Systems. Berlin, Germany, März 2020, S. 1–6.

  2. 2019

    1. J. Ruthardt u. a., „Online Junction Temperature Measurement via Internal Gate Resistance Using the High Frequency Gate Signal Injection Method“, in PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, in PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. VDE Verlag, Mai 2019, S. 1–7.
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